Job Description

The research scientist will be working with a team to carry out basic research in trustworthy formal methods. The topics of interest under this project include trustworthy automated reasoning, verification of randomized algorithms, compiler verification, and control/hybrid systems verification.

Key Responsibilities

• Research and Development: To carry out research tasks relevant to the project scope in trustworthy formal methods as listed briefly above.
• Student Supervision: Co-supervise students (undergrad/masters/PhD level) in relevant research tasks.
• Publication and Dissemination: Disseminate completed research work through publications and presentations at various high-quality international venues.
• Strategic Planning: Participate in other department/institute-level research activities and grant/project proposals.

Job Requirements:

• PhD degree in Computer Science / Mathematics or related fields
• At least 3 years of ecperience
• PhD specialization in formal methods, computational logic, or related topics, with track record of high-quality publications in top-tier venues.
• Proficiency in proof assistants such as Isabelle/HOL, Coq, or Lean will be beneficial.
• Knowledge or experience in cybersecurity will be beneficial.

Desired Attributes

• Ability to deeply investigate the topics of interest, leading to high-quality and impactful research output.
• Applicants should be motivated, resourceful, and analytical individuals.
• Possess good interpersonal, presentation and communication skills.

The above eligibility criteria are not exhaustive. A*STAR may include additional selection criteria based on its prevailing recruitment policies. These policies may be amended from time to time without notice. We regret that only shortlisted candidates will be notified.

Job Description:

We are looking for talented and highly motivated candidate to work on the research and development of flat optics. The recruited scientist will work in the National Semiconductor Translation and Innovation Centre (NSTIC), managed by A*STAR.

The candidate should have a solid background and hands-on experience in the research of optics. Candidate shall be able to perform independent research and solve challenging problems together with the team to deliver high impact results.

The main work scope of the position is as follow:

· Design and simulation of flat optics, including using machine learning method.

· Micro-nanofabrication of flat optics and their characterization.

· Technology development and translation to industry applications.

Job Requirements:

· PhD in Physics or Optics, Photonics, Electrical Engineering, Materials Science

· Hands-on experiences on flat optics or metaoptics are added advantages.

· Good team player, resilient in tackling challenge, effective communication ability.

The above eligibility criteria are not exhaustive. A*STAR may include additional selection criteria based on its prevailing recruitment policies. These policies may be amended from time to time without notice. We regret that only shortlisted candidates will be notified.

MedTech Catapult is a national initiative for accelerating the development of high-value MedTech projects through an in-house product engineering unit. This productization unit is responsible for supporting the development of technologies through the medical device development cycle to produce full-fledged hardware product systems. The Lead Engineer will report to the Lead, Product Engineering.

Job Responsibilities:

• To provide electronics and instrumentation design capability in support of the design, development, test and manufacture of safety critical products and processes for complex medical technology product solutions.
• To interact closely with engineers from other disciplines to achieve an optimized design within the stipulated project schedule.
• To design and develop PCB and control systems for next generation medical devices.
• To provide operational electronics development, prototype design and testing - both analogue and digital.
• To conduct PCB schematic capture and layout, including component selection and testing.
• To build and test prototypes and document the design and performance of these.
• To create embedded system design and implementation.
• To conduct EMC testing with in-house equipment and through liaison with EMC test house for electrical safety and medical device compliance.
• To support development of intellectual property portfolio in device design and process technology know-how.
• To provide clearly documented records of technical data, decisions, methodologies, calculations and software use in accordance with ISO/FDA quality standards.
• To support the Procurement and Engineering teams for sourcing and defining specifications.
• To conduct error and tolerance sensitivity analysis, reliability analysis, reliability testing and reliability test program design.
• To support CAD-based electro-mechanical integration, at the component level, board level and assembly level.
• Write and review documentations for QMS.
• Interface with external parties (design houses) to communicate product requirements.
• To support other activities for product engineering when required.

Requirements

• MSc/BSc in Electrical Engineering or Computer Engineering.
• >10 years experience in medical devices (e.g. electronic product design).
• Has a good knowledge and understanding of i) Processes of electronic product development and realization, ii) operation and design of electronic systems and circuits; iii) Regulations applying to medical devices, iv) Electronic device operation and fabrication and v) Electronic sensors, measurement systems and instrumentation.
• Experience with PCB design ? digital and analogue.
• Proficient in HDL languages (Verilog, System Verilog).
• Knowledge of ASIC design and sign-off.
• Familiarity with scripting languages like Python, Perl, or C/C++ is a plus.
• Experience with design, development or manufacture of photonic systems or photonics-enabled products is a plus.
• Experience with the use of simulation tools for electronic design is a plus.
• Experience with Medical device ISO standards including ISO9001, IS013485, ISO 14971 and IEC 60601-1 and managing QMS.
• Good collaboration skills, organised and detailed.
• Demonstrate strong interpersonal skills and leadership skill.

The above eligibility criteria are not exhaustive. A*STAR may include additional selection criteria based on its prevailing recruitment policies. These policies may be amended from time to time without notice. We regret that only shortlisted candidates will be notified.

Job Description

The research scientist will be working with a team to carry out basic research in trustworthy formal methods. The topics of interest under this project include trustworthy automated reasoning, verification of randomized algorithms, compiler verification, and control/hybrid systems verification.

Key Responsibilities

• Research and Development: To carry out research tasks relevant to the project scope in trustworthy formal methods as listed briefly above.
• Student Supervision: Co-supervise students (undergrad/masters/PhD level) in relevant research tasks.
• Publication and Dissemination: Disseminate completed research work through publications and presentations at various high-quality international venues.
• Strategic Planning: Participate in other department/institute-level research activities and grant/project proposals.

Job Requirements:

• PhD degree in Computer Science / Mathematics or related fields
• At least 5 years of ecperience
• PhD specialization in formal methods, computational logic, or related topics, with track record of high-quality publications in top-tier venues.
• Proficiency in proof assistants such as Isabelle/HOL, Coq, or Lean will be beneficial.
• Knowledge or experience in cybersecurity will be beneficial.

Desired Attributes

• Ability to deeply investigate the topics of interest, leading to high-quality and impactful research output.
• Applicants should be motivated, resourceful, and analytical individuals.
• Possess good interpersonal, presentation and communication skills.

The above eligibility criteria are not exhaustive. A*STAR may include additional selection criteria based on its prevailing recruitment policies. These policies may be amended from time to time without notice. We regret that only shortlisted candidates will be notified.

We are seeking a highly skilled High-Speed IO Modeling designer to join our team. The ideal candidate will have a strong background in Electrical or Computer Engineering (Masters/PhD) , with a focus on high speed circuit modeling, statistical analysis, jitter analysis, digital signal processing, and signal integrity. The successful candidate will play a crucial role in developing IO performance models for chiplet-based high-speed communication protocols and generating complete high-speed link performance matrices based on advanced packaging.

Key Responsibilities:

• Develop IO performance models (Tx, Rx) for chiplet-based high-speed communication protocols such as UCIe, AIB, and others.
• Create complete high-speed link models by integrating IO performance models with advanced packaging interconnects.
• Generate comprehensive high-speed link performance matrices, considering various parameters such as technology node, area, latency, power, number of channels, micro bump pitch, and frequency of data rates.
• Collaborate with cross-functional teams to ensure the successful integration of IO performance models into the overall system design.
• Develop parameterised PDN model and fluent in analysing SI and PI simulations
• Stay up-to-date with the latest advancements in high-speed IO modelling techniques and technologies, and apply this knowledge to improve existing models and develop new ones.

Required Qualifications:

• Master's degree in Electrical or Computer Engineering with 2+ years of relevant experience, or a PhD in Electrical or Computer Engineering with 1+ years of relevant experience.
• Strong understanding of package/interconnect/I-O modelling, statistical analysis, jitter analysis, digital signal processing, and signal integrity.
• Experience in mixed-signal circuit design for High-Speed IOs (e.g AIB, AXI, UCIe).
• Proficiency in IBIS-AMI specification and model creation using Keysight ADS.
• Programming and scripting skills in one or more of the following: Python, Perl, C/C++, TCL, or AEL.

Preferred Qualifications:

• Ability to develop and implementing high-speed IO performance models using industry-standard tools/methodologies.
• Experience with advanced packaging technologies and their impact on high-speed link performance.
• Strong problem-solving skills and the ability to think creatively to overcome technical challenges.
• Excellent communication and collaboration skills, with the ability to work effectively in a team environment.

Key Responsibilities

• Design, develop, and maintain high-performance C++ applications.
• Collaborate with software architects and other developers to design system architecture and APIs.
• Optimize code for performance, scalability, and reliability.
• Debug and resolve complex technical issues, providing mentorship to junior developers.
• Write clean, maintainable, and well-documented code.
• Participate in code reviews and contribute to best practices.
• Work closely with QA teams to ensure high-quality software delivery.
• Stay updated on the latest industry trends and technologies to continuously improve development processes.

Qualifications

• Bachelor’s or Master’s degree in Computer Science, Engineering, or a related field.
• Strong understanding of object-oriented programming (OOP) and design patterns.
• Experience with multi-threading, concurrency, and parallel processing.
• Proficient in C++11/14/17 standards and familiarity with C++20.
• Experience with debugging tools and performance profiling.
• Familiarity with Linux/Unix operating systems.
• Knowledge of software development lifecycle (SDLC) and agile methodologies.
• Excellent problem-solving skills and attention to detail.
• Strong communication skills and the ability to work well in a team environment.
• Knowledge of other programming languages such as Python, JavaScript
• Experience with Electron and node modules

Roles and Responsibilities:

• TCAD modeling, simulation, and innovative design of high power electronics devices, as well as device characterization.
• Develop and simulate high power SiC MOSFETs (planar, trench, Super-Junction MOSFET, IGBT) with a blocking voltage exceeding 1.2K using the industry-standard Synopsys/Silvaco simulator.
• Create and simulate practical & efficient junction terminations.
• Model transport and carrier scattering in devices operating under extreme ambient conditions.
• Serve as a valuable resource for colleagues with lesser TCAD power electronics experience and take lead in group projects with managing risks & resource requirements.
• Foster close collaborations with both internal and external customers to fully understand customer issues and requirements.

Job Requirements:

• PhD Degree in Electrical Engineering or related field.
• >2-3 years industrial experience for high power devices design and modeling.
• Thorough understanding of different types of high-voltage, high-power MOSFETs including Planar, Trench, Super-Junction MOSFETs, and IGBTs, with a focus on design and device characterizations.
• Hands-on skill in designing MOSFET/diode layouts.
• Excellent communication skills to effectively engage with customers, address their needs, resolve issues, and meet demands.

Join the Institute of Microelectronics (IME) to be immersed in cutting-edge semiconductor research. As a research institute within the Agency for Science, Technology and Research (A*STAR), IME bridges the gap between academia and industry. Our mission is to accelerate innovation in advanced packaging, piezoMEMS, SiC, RF/mmwave GaN, and photonics & sensors, and to develop talent and inspire in Singapore.

We are looking for a passionate individual to lead our Technology-Business Development (Tech-Biz) department. You will be responsible for leading the department to define and implement our strategies for technology-business development, account management, sales and marketing, and ecosystem development. If you"re excited about the future of microelectronics and wish to contribute to the development of Singapore’s innovation engine for microelectronics, we want you on our team!

Job Responsibilities

• Technology-business Development: Lead the department to define and develop strategies for technology translation.
• Customer Relationship Management: Lead the department to win and retain industry partners and customers for high-value and sustainable engagements.
• Sales: Collect, maximise leads and close customer collaboration projects.
• Marketing: Develop and execute marketing strategies to promote IME’s research capabilities to the industry. Represent IME at international conferences and exhibitions.
• Collaborate with Technology Development (TD) Teams: Partner with our "Technology Development" teams to craft robust value propositions for the industry and shape IME’s ‘go-to-market’ strategy. Detect, track and provide market trends and needs for the TD teams.
• Ecosystem Development: Liaise, coordinate and engage effectively with key internal stakeholders, including A*STAR’s Industry and Enterprise Group, other economic agencies and public sector agencies, to align efforts and achieve common goals for the Singapore semiconductor ecosystem.

Job Requirements:

• Degree in Science or Engineering.
• At least 10-15 years of relevant work experience.
• Able to structure and negotiate collaboration agreements.
• Strong communication (written and verbal), marketing and interpersonal skills.
• Strong analytical skills.
• Results oriented, pro-active, and a team player.
• Adaptable and comfortable working in a fast-paced and fast-changing environment.
• Passion to develop Singapore’s semiconductor industry.

Roles and Responsibilities:

• TCAD modeling, simulation, and innovative design of high power electronics devices, as well as device characterization.
• Develop and simulate high power SiC MOSFETs (planar, trench, Super-Junction MOSFET, IGBT) with a blocking voltage exceeding 1.2K using the industry-standard Synopsys/Silvaco simulator.
• Create and simulate practical & efficient junction terminations.
• Model transport and carrier scattering in devices operating under extreme ambient conditions.
• Serve as a valuable resource for colleagues with lesser TCAD power electronics experience and take lead in group projects with managing risks & resource requirements.
• Foster close collaborations with both internal and external customers to fully understand customer issues and requirements.

Job Requirements:

• PhD Degree in Electrical Engineering or related field.
• >2-3 years industrial experience for high power devices design and modeling.
• Thorough understanding of different types of high-voltage, high-power MOSFETs including Planar, Trench, Super-Junction MOSFETs, and IGBTs, with a focus on design and device characterizations.
• Hands-on skill in designing MOSFET/diode layouts.
• Excellent communication skills to effectively engage with customers, address their needs, resolve issues, and meet demands.

Join the Institute of Microelectronics (IME) to be immersed in cutting-edge semiconductor research. As a research institute within the Agency for Science, Technology and Research (A*STAR), IME bridges the gap between academia and industry. Our mission is to accelerate innovation in advanced packaging, piezoMEMS, SiC, RF/mmwave GaN, and photonics & sensors, and to develop talent and inspire in Singapore.

We are looking for a passionate individual to lead our Technology-Business Development (Tech-Biz) department. You will be responsible for leading the department to define and implement our strategies for technology-business development, account management, sales and marketing, and ecosystem development. If you"re excited about the future of microelectronics and wish to contribute to the development of Singapore’s innovation engine for microelectronics, we want you on our team!

Job Responsibilities

• Technology-business Development: Lead the department to define and develop strategies for technology translation.
• Customer Relationship Management: Lead the department to win and retain industry partners and customers for high-value and sustainable engagements.
• Sales: Collect, maximise leads and close customer collaboration projects.
• Marketing: Develop and execute marketing strategies to promote IME’s research capabilities to the industry. Represent IME at international conferences and exhibitions.
• Collaborate with Technology Development (TD) Teams: Partner with our "Technology Development" teams to craft robust value propositions for the industry and shape IME’s ‘go-to-market’ strategy. Detect, track and provide market trends and needs for the TD teams.
• Ecosystem Development: Liaise, coordinate and engage effectively with key internal stakeholders, including A*STAR’s Industry and Enterprise Group, other economic agencies and public sector agencies, to align efforts and achieve common goals for the Singapore semiconductor ecosystem.

Job Requirements:

• Degree in Science or Engineering.
• At least 10-15 years of relevant work experience.
• Able to structure and negotiate collaboration agreements.
• Strong communication (written and verbal), marketing and interpersonal skills.
• Strong analytical skills.
• Results oriented, pro-active, and a team player.
• Adaptable and comfortable working in a fast-paced and fast-changing environment.
• Passion to develop Singapore’s semiconductor industry.

ROLE:
A*STAR-IME is leading the way in establishing industry first 200mm open Silicon Carbide (SiC) R&D program. The program specific focus is on advancing 200mm SiC technologies in key areas such as epitaxy, gate stack, ion implantation, and dry etching, and integrating these modules to fabricate high-performance power devices. Our objective is to drive innovation in power device research, particularly in power MOSFETs rated above 1.2KV. Developing key innovative process is crucial for creating high-performance devices that will contribute to advancements in automotive technologies, vehicle electrification, safety measures, sustainable energy grids, data centers, and industrial & aerospace automation. This role involve growing leadership into ion implantation processes for p-body, channel, guard ring, source contact, and other components. We are currently seeking such individual with ~5 years of experience in ion implantation. The chosen candidate will be responsible for independently supervising ion implantation processes, conducting ion implant simulations, possessing knowledge of crystallography and ion interaction with atoms, having strong understanding of implanters and related thermal processing physics, beam optics, dosimetry systems, and vacuum technology. The ideal candidate should also be willing to collaborate with various departments, the technology development group, and customers. Furthermore, the candidate will contribute to the wide-bandgap team by sharing the ion implantation expertise on compound semiconductor materials and collaborate with other departments working with Si-based technology. The candidate will also be groomed to lead this diffusion process module group of ~6 headcounts into the future.

RESPONSIBILITIES:

• Diagnose malfunctions and using test equipment & software to test faulty tool; applying knowledge of the functional operation of the ion implant equipment

• Support on-site ion implanters in creating, running & characterizing recipes for recipe validation and develop process to achieve the desired dopant profile with excellent
damage recovery.

• Collaborate with vendors to optimize equipment performance and reduce tool downtime

• Analyze data related to implant-related defects formation with quantification and defects minimizations strategy

• Examine work-orders and communicates with equipment operators to resolve equipment problems & determine mechanical and human errors contributed to the issues

• Perform scheduled preventive maintenance tasks with tool operators, especially in checking, cleaning, repairing, detecting and preventing problems

• Responsible for designing experiments for ion implantation at various dose, energy, tilt, and twist levels

REQUIREMENTS:

• Ms/PhD Degree in Electrical Engineering or related field

• >3-5 years industrial experience for high power device design and modeling

• Extensive proficiency in medium to high energy/current ion implantation processes, including a comprehensive knowledge of implant equipment, equipment parts, and
troubleshooting techniques to minimize equipment downtime

• Good understanding of wide bandgap semiconductor materials and their corresponding dopant species

• Expertise in ion channeling, ion bombardment, and their impact on the implant species profile

• In-depth comprehension of defect formation and annihilation processes in the implanted region of semiconductors

• Familiarity with essential device properties resulting from ion implantation

• Adept at mentoring and transferring knowledge to junior staff members

Job Description:

Be part of an exciting Team working on cutting-edge advanced packaging process technologies. Partner and work with various FAB users, to always enable smooth operations and develop packaging solutions and taking the solutions from concept to production. Responsibilities will also include assisting in operations support in FAB clean rooms to make sure all rounded supports are provided.

This position is based in Singapore.

Responsibilities:

• Looking for a reliable, agile, and professional individual.
• Oversee the Team spare/ chemicals / inventories stores – upkeep with good house-keepings, periodic cycle counts. Maintain the inventory database, ensuring timely and accurate recordings, raise purchase requests accordingly.
• Take charge and provide day to day supports in all logistics needs and initiate material/spare parts procurement when required to ensure smooth Fab operations.
• Accountable for the inventory movements required to enable smooth lot operations across IME Premises.
• Follow through the orders from the start of purchase till delivery and to ensure that goods are delivered are on time.
• Work seamlessly with various stakeholders to provide logistics support and deliver inventory on time.
• Work towards and employ critical thinking, put-up good initiatives to move forward to digitalization.
• Ability to work in a multi-task environment.

Experience:

• Education: Diploma in engineering discipline. Preferably in supply chain logistic/ warehouse operations.
• At least 2 years of warehouse operations.
• Preferably some experience in semiconductor / manufacturing environment, with good wide contacts with semiconductor material suppliers, equipment vendors.
• Strong knowledge-based on excel skills and some knowledge of supply chain analytics.

As part of IME Integrated Circuit Design and System Department, we are looking for a candidate with relevant experience in ultrasound imaging system design. This candidate will define an ultrasound transducer array beamformer IC architecture for imaging applications. The candidate will work closely with MEMS team on system architecture, circuit design, simulation, validation, and integration.

Role & Responsibilities

• Perform system-level beamformer architecture, design, and simulation, to derive circuit-level design specifications.
• Beamforming array optimization using AI algorithms.
• Design and implementation of beamformer algorithm in hardware.
• Work together with team to investigate novel circuit/system solutions to create new inventions.

Requirements

• Master’s / PhD degree in Electrical Engineering or equivalent
• Good understanding of ultrasound imaging systems and beamforming theories.
• Knowledge of AI algorithms and implementation will be a plus
• Familiar with IC test equipment such as oscilloscope, spectrum analyzer, etc.
• Able to generate high-quality scientific publications and patents
• Team player, quick learner and self-driven

Job Description:

• Be a member of the leadership team to achieve the vision and mission of the National GaN Technology Centre (NGTC).
• Lead the Technology, Engineering and Industry team in technology road mapping and R&D pathfinding in device architecture, fabrication process technology, and MMIC design.
• Lead the Technology team, which comprises (a) characterization & modelling, (b) MMIC design, testing & model validation, (c) device failure and reliability analysis, (d) ultra high frequency GaN-on-SiC device design, layout, fabrication and characterization, and (e) low voltage GaN-on-Silicon device design, layout, fabrication and characterization.
• Coordinate with the Engineering team to develop ultra high frequency devices, ultra low voltage devices, and their MMICs.
• Coordinate with the Engineering and Operations teams to ensure timely delivery of the projects.
• Initiate and secure research grants and industry funding.
• Initiate, coordinate and manage research collaborations with IHLs and industry partners.
• Provide regular progress report of the Technology team’s activities to NGTC management.
• Represent NGTC in customer meetings.

Requirements:

• PhD in Electrical & Electronic Engineering, Materials Science and Engineering, Microelectronics Engineering, or closely related fields are welcome to apply.
• Deep understanding of GaN-HEMT device physics and GaN-based MMICs.
• At least 12 years of post-PhD hands-on experience in GaN HEMT and MMIC technology development including design, characterization (e.g. DC, small-signal and load-pull measurement), and modelling; preferably in RF GaN-on-Silicon or GaN-on-SiC technologies.
• At least 12 years of experience in leading a team of research engineers/scientists in managing multiple projects.
• Candidates with industry experience in GaN related R&D would be preferred.
• Working knowledge and hands-on experience in Design of Experiments (DOE) methodologies, statistical root cause analysis, problem-solving methods, and in-line metrology techniques is desired.
• Possess strong leadership, project management, interpersonal and oral/written communication skills.

The above eligibility criteria are not exhaustive. A*STAR may include additional selection criteria based on its prevailing recruitment policies. These policies may be amended from time to time without notice. We regret that only shortlisted candidates will be notified.

Job Description

• Follow SOP and carry out CAS per specification.
• Execute scheduled / special preventive maintenance (PM) as per PM schedule and
• specifications.
• Troubleshoot basic equipment related issues and minimize equipment downtime.
• Maintain good housekeeping in the production floor / sub FAB / Office, and maintenance
• support areas.
• Ensure and follow good safety practice and also safe custody of tools, equipment and
• other properties belonging to the Module.
• Know how to use SPACE to monitor and analyze SPC charts. Understand all the PR rules
• and follow CAS correctly.
• Know how to use measurement instruments effectively in data collection. Able to create
• metrology job files correctly (equipment list to be defined by the Supervisors.)
• Perform shift duties (12-hours shift) to support the running of production in the Module and
• ensure equipment readiness and worthiness for production.
• Assist Engineer in the installation and hook up of new or upgrading equipment.
• Assist in implementing equipment improvement projects.
• Able to train operators and trainers in new operational procedures.
• Execute good maintenance of support tools.
• Assist new Technician/Associate Engineers on their On-The-Job-Training (OJT) by acting
• as their buddy.
• Provide proper and accurate passed down of line issues and documentation (fill up and file
• the checklists).
• Wafer scrap reduction awareness.
• Participate in CIP programs to improve productivity and quality of equipment/process.
• Coordinate with operators to ensure efficiency of work to meet Mfg and Module objectives

Job Requirements:

• Diploma Electrical / Electronics / Mechanical / Mechatronics / Microelectronics
• Experience in CMP equipment tools
• Able to perform 12-hour rotating shift
• An excellent team player with good interpersonal skill
• Strong logical thinking capability and good analytical skill
• Highly committed with good ownership and accountability
• Passion for the semiconductor / manufacturing industry
• Able to adapt in a fast pace environment and work under pressure
• Proficient in MS Office Applications

Scientist/Senior scientist will be part of heterogeneous integration group focused on development of the quantum packaging technology platforms to integrate qubit and control chip on superconductivity interposer.

He/she will work with cross functional team to:

• Design and simulation of superconducting circuits for salable quantum processor in 3D flip-chip architecture.
• Explore and develop superconducting nanowire base photo detector.
• Design and layout of circuits components of a superconducting qubit.
• Develop design rules and PDK for quantum packaging technologies.
• Provide quantum packaging solutions to meet the system requirements based on the simulation results.
  Prepare competitive grant research proposals and lead execution of these proposals.
  Engage industry partners to align and develop the building blocks required for next generations quantum packaging platforms.

Job Requirements:

• Master/PhD in quantum computing; Electrical and Computer Engineering; Material science area
• 4 to 5 years’ experience in superconducting circuits design and simulation for scalable quantum processor. Deep understanding on 3D quantum package
• Working experience on measuring loss and dielectric constants of materials at cryogenic temperatures
• Strong communication, industry awareness, and problem-solving skills.
• Highly motivated to succeed, a self-starter who is driven and able to work with others effectively to get things done.

ROLE:
A*STAR-IME is leading the way in establishing industry first 200mm open Silicon Carbide (SiC) R&D program. The program specific focus is on advancing 200mm SiC technologies in key areas such as epitaxy, gate stack, ion implantation, and dry etching, and integrating these modules to fabricate high-performance power devices. Our objective is to drive innovation in power device research, particularly in power MOSFETs rated above 1.2KV. Developing key innovative process is crucial for creating high-performance devices that will contribute to advancements in automotive technologies, vehicle electrification, safety measures, sustainable energy grids, data centers, and industrial & aerospace automation. This role involve growing leadership into ion implantation processes for p-body, channel, guard ring, source contact, and other components. We are currently seeking such individual with ~5 years of experience in ion implantation. The chosen candidate will be responsible for independently supervising ion implantation processes, conducting ion implant simulations, possessing knowledge of crystallography and ion interaction with atoms, having strong understanding of implanters and related thermal processing physics, beam optics, dosimetry systems, and vacuum technology. The ideal candidate should also be willing to collaborate with various departments, the technology development group, and customers. Furthermore, the candidate will contribute to the wide-bandgap team by sharing the ion implantation expertise on compound semiconductor materials and collaborate with other departments working with Si-based technology. The candidate will also be groomed to lead this diffusion process module group of ~6 headcounts into the future.

RESPONSIBILITIES:

• Diagnose malfunctions and using test equipment & software to test faulty tool; applying knowledge of the functional operation of the ion implant equipment

• Support on-site ion implanters in creating, running & characterizing recipes for recipe validation and develop process to achieve the desired dopant profile with excellent
damage recovery.

• Collaborate with vendors to optimize equipment performance and reduce tool downtime

• Analyze data related to implant-related defects formation with quantification and defects minimizations strategy

• Examine work-orders and communicates with equipment operators to resolve equipment problems & determine mechanical and human errors contributed to the issues

• Perform scheduled preventive maintenance tasks with tool operators, especially in checking, cleaning, repairing, detecting and preventing problems

• Responsible for designing experiments for ion implantation at various dose, energy, tilt, and twist levels

REQUIREMENTS:

• Ms/PhD Degree in Electrical Engineering or related field

• >3-5 years industrial experience for high power device design and modeling

• Extensive proficiency in medium to high energy/current ion implantation processes, including a comprehensive knowledge of implant equipment, equipment parts, and
troubleshooting techniques to minimize equipment downtime

• Good understanding of wide bandgap semiconductor materials and their corresponding dopant species

• Expertise in ion channeling, ion bombardment, and their impact on the implant species profile

• In-depth comprehension of defect formation and annihilation processes in the implanted region of semiconductors

• Familiarity with essential device properties resulting from ion implantation

• Adept at mentoring and transferring knowledge to junior staff members

Role & Responsibilities:

• Responsibilities include diagnosing appropriate levels of metal/metal-alloy contaminations by oxygen and other contaminants; determining the root cause of contaminants, and establishing protocols for characterizations.
• Hands-on providing support for onsite metal PVD, including creating, running, and characterizing recipes to achieve the lowest resistances.
• Collaborates closely with equipment vendors and device engineers to optimize the metal-stack for device performances and robustness/reliability, from low to high temperatures.
• Lead data analysis related to implant-induced defects and cleaning issues on metal contacts with solutions development.
• Examines the work-functions of metal/metal-alloys suitable for Ohmic contact on SiC.
• Responsible for designing experiments for Ohmic contact on various SiC substrates with different doping types, determining their impact, and resolving issues to achieve the lowest specific contact resistances.
• Designing cleaning processes to obtain ideal Schottky diode using various metal/metal-alloys on SiC for high-performance applications.
• Work closely with cross-departmental and integration teams and in 3-5 years’ time develop a WBG backend process integration team of at least 4 persons.

Requirements:

• PhD Degree in Material Science, Physics, Electrical Engineering or related field.
• >8 years related industrial experience inclusing backend process module integration.
• Extensive hands-on experience in PVD (Physical Vapor Deposition) processing for metal depositions and interface tuning.
• Strong understanding of metal-semiconductor contact physics.
• Expertise in work-function tunings of metal and metal-alloy.
• Proficiency in modulating electron affinity through implantation or surface treatments of semiconductors.
• Familiarity with wide band-gap semiconductor materials and their interaction with metal/metal-alloys at various temperatures.
• Thorough fundamentals in Ohmic contact and Schottky diode physics, as well as the impact of defects and contaminations on electrical properties.
• Skilled at mentoring and transferring knowledge to junior staff members.
• Excellent communication skills to effectively address customers' needs, concerns, and solution requirements.

Position:

Our team is starting an exciting project to develop RF/mm-wave ICs for the future of communication for Beyond-5G to 6G applications. We are looking for an exceptional candidate with relevant expertise to join us. Our team focuses on developing communication modules for both terrestrial and non-terrestrial needs. You will work at the Institute of Microelectronics (IME) to create the most advanced semiconductor technologies. You will collaborate with world-leading industries and academic institutions on innovative designs and strategic intellectual properties.

Job Responsibility:

• Benchmarking with datasheets, prior arts, and latest academic work.
• In-depth design and analysis with electrical/electromagnetic simulations.
• In-depth analysis of design robustness, optimization, and testability.
• In-depth presentations and report recording of design, layout, test and measurement, and fault analysis.
• Working independently, as a team, and with collaborators from industry and academic backgrounds.

Pre-requisites:

• A Master’s / PhD Degree in Electronics or Electrical Engineering and proven academic and industry experience are pluses.
• Experienced in designing RF/mmWave such as LNA, mixer, PA, buffer, transmission line, baluns, PLL, VCO, etc.
• Experienced in designing base-band/mixed-signal circuits, such as amplifiers, bandgap, ADC, DAC, etc., is a plus.
• Knowledgeable in design trade-offs at the circuit-level specification.
• Experienced in designing in CMOS and SiGe technology or any other technologies like RF-SOI and compound-semiconductor is a plus.
• Proficient in using Cadence and EM tools like ADS for EM circuit simulation, IC layout, LVS, and DRC verification.
• Familiarity with IC measurement and debugging and hands-on experience with RF/mmWave equipment such as spectrum analyzer, network analyzer, oscilloscope, and probe station.
• Good publication record with a strong awareness of state-of-the-art.
• Good communication and teamwork.

ROLE:
IME is leading the effort to establish the industry leading Silicon Carbide R&D program. This program aims to advance 200mm Silicon Carbide technologies in various areas, such as epitaxy, device design, process integration & fabrication, and power module packaging. The main objective is to drive disruptive innovations in power device research, with a specific focus on >1.2KV power MOSFETs. These innovations are intended to enhance automotive technologies, vehicle electrification, safety measures, sustainable energy grids, and industrial automation. Key aspects to demonstrate for this role include high power device design, novel device concepts, doping design, gate oxidation, and wide-bandgap process simulations. To achieve this, we are seeking individual with extensive industry experience in using Synopsys/Silvaco TCAD simulator, relevant device characterization skills, design simulation development abilities, a willingness to mentor junior staffs, and strong interpersonal skills. The candidate will contribute to the wide-bandgap & Silicon Carbide team by utilizing their device knowledge, guiding team on device characterization, implementing state-of-art Silicon Carbide power MOSFETs (Planar, Trench & Super-Junction), and innovative novel power MOSFETs for future applications.

RESPONSIBILITIES:

• TCAD modeling & simulation, novel high power device design, simulation, and device characterization

• Design and simulate high voltage Silicon Carbide MOSFETs (planar, trench, SJ MOSFET, IGBT) with a blocking voltage of >1.2K using Synopsys/Silvaco simulator

• Design & simulate practical and effective junction terminations

• Provide guidances on device structure, optimizing cell, power/performance analysis, process risk assessment, and recommendations for experimental split and improvement

• Develop and apply fundamental MOS device physics-based TCAD modelling & electric field management to calculate band structure, carrier transport, blocking voltage,
switching properties, and thermal management for vertical power devices in the presence of interface state density, gate oxide defects, and defects in Silicon Carbide

• Model transport and carrier scattering in devices operating in extreme ambient conditions

• Collaborate with diverse teams, including process integration, characterization, and circuit design engineers, to analyze and troubleshoot device-related issues during
development

• Serve as a resource for colleagues with less experience, and lead small projects with manageable risks and resource requirements

• Work closely with both internal and external customers to understand customer issues and align their demands. And grow this wide-bandgap team to ~5 headcounts in the
next 3 years.

JOB REQUIREMENTS:

• PhD in Electrical Engineering or related field

• >10 years industrial experience for high power device design and modeling

• Deep knowledge of high voltage, high power MOSFETs (including Planar, Trench, S-J MOSFETs, and IGBTs) design and device characterization on 4H-SiC & GaN substrates.

• Solid understanding of wide-bandgap semiconductor materials and the strong physics of MOSFET devices

• Ability to teach and transfer knowledge to junior staff members

• Ability to effectively communicate and plan with customers regarding their needs, issues, and demands

Job Description

The Engineer will be responsible for driving electro-mechanical product development in compliance with ISO 13485 standards across multiple levels, from component to product. The role includes planning and monitoring New Product Introduction (NPI) programs, managing engineering changes, and maintaining documentation, including Design History Files. The position requires close coordination with both internal and external suppliers, adhering to Quality Management System and regulatory standards.

Key Skills and Experience:

• Bachelor degree in Mechanical Engineering with 3+ years in electro-mechanical systems.
• Technical proficiency in optimizing designs for mechanical and electro-mechanical systems.
• Solid understanding of metal and plastic manufacturing processes for product design.
• Proficiency in 3D CAD software (e.g., SolidWorks), including GD&T and kinematic calculations.

Attributes:

• Analytical and detail-oriented, with a collaborative and hands-on approach.

The above eligibility criteria are not exhaustive. A*STAR may include additional selection criteria based on its prevailing recruitment policies. These policies may be amended from time to time without notice. We regret that only shortlisted candidates will be notified.

Position:

Our team is starting an exciting project to develop RF/mm-wave ICs for the future of communication for Beyond-5G to 6G applications. We are looking for an exceptional candidate with relevant expertise to join us. Our team focuses on developing communication modules for both terrestrial and non-terrestrial needs. You will work at the Institute of Microelectronics (IME) to create the most advanced semiconductor technologies. You will collaborate with world-leading industries and academic institutions on innovative designs and strategic intellectual properties.

Job Responsibility:

• Benchmarking with datasheets, prior arts, and latest academic work.
• In-depth design and analysis with electrical/electromagnetic simulations.
• In-depth analysis of design robustness, optimization, and testability.
• In-depth presentations and report recording of design, layout, test and measurement, and fault analysis.
• Working independently, as a team, and with collaborators from industry and academic backgrounds.

Pre-requisites:

• A Master’s / PhD Degree in Electronics or Electrical Engineering and proven academic and industry experience are pluses.
• Experienced in designing RF/mmWave such as LNA, mixer, PA, buffer, transmission line, baluns, PLL, VCO, etc.
• Experienced in designing base-band/mixed-signal circuits, such as amplifiers, bandgap, ADC, DAC, etc., is a plus.
• Knowledgeable in design trade-offs at the circuit-level specification.
• Experienced in designing in CMOS and SiGe technology or any other technologies like RF-SOI and compound-semiconductor is a plus.
• Proficient in using Cadence and EM tools like ADS for EM circuit simulation, IC layout, LVS, and DRC verification.
• Familiarity with IC measurement and debugging and hands-on experience with RF/mmWave equipment such as spectrum analyzer, network analyzer, oscilloscope, and probe station.
• Good publication record with a strong awareness of state-of-the-art.
• Good communication and teamwork.

ROLE:
IME is leading the effort to establish the industry leading Silicon Carbide R&D program. This program aims to advance 200mm Silicon Carbide technologies in various areas, such as epitaxy, device design, process integration & fabrication, and power module packaging. The main objective is to drive disruptive innovations in power device research, with a specific focus on >1.2KV power MOSFETs. These innovations are intended to enhance automotive technologies, vehicle electrification, safety measures, sustainable energy grids, and industrial automation. Key aspects to demonstrate for this role include high power device design, novel device concepts, doping design, gate oxidation, and wide-bandgap process simulations. To achieve this, we are seeking individual with extensive industry experience in using Synopsys/Silvaco TCAD simulator, relevant device characterization skills, design simulation development abilities, a willingness to mentor junior staffs, and strong interpersonal skills. The candidate will contribute to the wide-bandgap & Silicon Carbide team by utilizing their device knowledge, guiding team on device characterization, implementing state-of-art Silicon Carbide power MOSFETs (Planar, Trench & Super-Junction), and innovative novel power MOSFETs for future applications.

RESPONSIBILITIES:

• TCAD modeling & simulation, novel high power device design, simulation, and device characterization

• Design and simulate high voltage Silicon Carbide MOSFETs (planar, trench, SJ MOSFET, IGBT) with a blocking voltage of >1.2K using Synopsys/Silvaco simulator

• Design & simulate practical and effective junction terminations

• Provide guidances on device structure, optimizing cell, power/performance analysis, process risk assessment, and recommendations for experimental split and improvement

• Develop and apply fundamental MOS device physics-based TCAD modelling & electric field management to calculate band structure, carrier transport, blocking voltage,
switching properties, and thermal management for vertical power devices in the presence of interface state density, gate oxide defects, and defects in Silicon Carbide

• Model transport and carrier scattering in devices operating in extreme ambient conditions

• Collaborate with diverse teams, including process integration, characterization, and circuit design engineers, to analyze and troubleshoot device-related issues during
development

• Serve as a resource for colleagues with less experience, and lead small projects with manageable risks and resource requirements

• Work closely with both internal and external customers to understand customer issues and align their demands. And grow this wide-bandgap team to ~5 headcounts in the
next 3 years.

JOB REQUIREMENTS:

• PhD in Electrical Engineering or related field

• >10 years industrial experience for high power device design and modeling

• Deep knowledge of high voltage, high power MOSFETs (including Planar, Trench, S-J MOSFETs, and IGBTs) design and device characterization on 4H-SiC & GaN substrates.

• Solid understanding of wide-bandgap semiconductor materials and the strong physics of MOSFET devices

• Ability to teach and transfer knowledge to junior staff members

• Ability to effectively communicate and plan with customers regarding their needs, issues, and demands

The National Quantum Federated Foundry (NQFF), hosted at the Institute of Materials Research and Engineering (IMRE), part of the Agency for Science, Technology, and Research (A*STAR), is looking for a research scientist who is experienced in RF electronics simulations and design. The successful candidate will be part of a team of research scientists and engineers working on devices and hardware for quantum technologies, including superconducting qubits, resonator systems, opto-electronic and photonics devices, control systems, and so on. The work in NQFF will support local and international efforts to develop and translate quantum technologies to realize exciting real-world applications.

The roles of the successful candidate will include:

• Design and simulation of electrical and opto-electronic devices for quantum technologies
• Assist the formulation of device fabrication and testing plans
• Operation and maintenance of simulation software and workstations
• Analysis and presentation of scientific results

Job requirements:

• PhD degree in physics, applied physics, electrical engineering, material science & engineering, or any other relevant disciplines.
• At least more than 10 years of relevant experience
• Experience in RF hardware/electronics simulations and design
• Familiarity with superconducting qubit design and cryogenic devices is highly desired
• Expertise in simulation software (COMSOL, HFSS, etc) and scripting/programming
• Ability to independently plan and execute research work
• Ability to communicate well and work closely with team members

The above eligibility criteria are not exhaustive. A*STAR may include additional selection criteria based on its prevailing recruitment policies. These policies may be amended from time to time without notice. We regret that only shortlisted candidates will be notified.

Role & Responsibilities:

• Responsibilities include diagnosing appropriate levels of metal/metal-alloy contaminations by oxygen and other contaminants; determining the root cause of contaminants, and establishing protocols for characterizations.
• Hands-on providing support for onsite metal PVD, including creating, running, and characterizing recipes to achieve the lowest resistances.
• Collaborates closely with equipment vendors and device engineers to optimize the metal-stack for device performances and robustness/reliability, from low to high temperatures.
• Lead data analysis related to implant-induced defects and cleaning issues on metal contacts with solutions development.
• Examines the work-functions of metal/metal-alloys suitable for Ohmic contact on SiC.
• Responsible for designing experiments for Ohmic contact on various SiC substrates with different doping types, determining their impact, and resolving issues to achieve the lowest specific contact resistances.
• Designing cleaning processes to obtain ideal Schottky diode using various metal/metal-alloys on SiC for high-performance applications.
• Work closely with cross-departmental and integration teams and in 3-5 years’ time develop a WBG backend process integration team of at least 4 persons.

Requirements:

• PhD Degree in Material Science, Physics, Electrical Engineering or related field.
• >8 years related industrial experience inclusing backend process module integration.
• Extensive hands-on experience in PVD (Physical Vapor Deposition) processing for metal depositions and interface tuning.
• Strong understanding of metal-semiconductor contact physics.
• Expertise in work-function tunings of metal and metal-alloy.
• Proficiency in modulating electron affinity through implantation or surface treatments of semiconductors.
• Familiarity with wide band-gap semiconductor materials and their interaction with metal/metal-alloys at various temperatures.
• Thorough fundamentals in Ohmic contact and Schottky diode physics, as well as the impact of defects and contaminations on electrical properties.
• Skilled at mentoring and transferring knowledge to junior staff members.
• Excellent communication skills to effectively address customers' needs, concerns, and solution requirements.