The Energy Research Institute at NTU (ERI@N) invites applications for the position of Research Scientist.
The Researcher will work on a project to conduct the R&D of GaN-based transistors on silicon substrates/engineered substrates (e.g. HEMT, MISHEMT, FinHEMT etc.) suitable for millimeter-wave (24-40GHz) low-voltage mobile communication applications.
Key Responsibilities:
- Develop fabrication process modules (e.g. ohmic, gate, interconnects etc) in wafer fabrication facility
- Fabrication, characterization and analysis of GaN-based transistors
- Assist in project review report drafting, project proposal drafting, slides preparation and publishing conference/journal papers
- Student project supervision (including JC and Poly students, IA Students, Final Year Project (FYP) Students, PhD students)
Job Requirements:
- Bachelor/Master/PhD in Electrical and Electronic Engineering or related field
- Expertise in semiconductor device fabrication and characterisation
- Knowledge in Gallium Nitride devices (e.g. HEMT, MISHEMT, FinHEMT etc) is preferred
- Must be self-motivated and be prepared to work independently
- Publication track record is an advantage
- Proficiency in English
We regret that only shortlisted candidates will be notified.
