The Senior Research Fellow (RF) will work on a research project to conduct research on the development of compound semiconductor growth and device processing in Energy Research Institute @ NTU (ERI@N).
Key Responsibilities:
- Develop regrowth fabrication process using highly doped GaN structure to reduce the Ohmic contact resistance, preferably having worked in clean room process environment
- Support in the growth of GaN epistructures using MBE growth process technology
- Electrical, structural, surface and optical characterization of III-Nitride semiconductor epiwafers
- Thorough analysis of the results and publish in high impact factor scientific journals
- Independent handling of the project to meet the deliverables timely
- Writing project proposal and technical reports to the funding agencies
- Support PhD students and junior research staff in their research projects
Job Responsibilities:
- PhD in Physics, Materials Science, Electrical and Electronic Engineering or related field
- Hands-on experience with III-Nitride semiconductor heterostructure growth and characterization, and preferably device processing in cleanroom and characterization tools
- Self-driven and motivated person who is a good team player
- Ability to adapt to changing priorities
- Fluent in English and competent in technical writing skills
We regret that only shortlisted candidates will be notified.