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Job Description
We are looking for Research Fellows who have experience in realizing two-dimensional (2D) memtransistor / memristor devices and its integration with active selectors for ultralow power electronics applications.
The candidate is expected to:
• Develop device designs, fabrication, and extensive characterization of advanced memory/transistors integrated with two-dimensional transition metal dichalcogenides (2D-TMD).
• Report experimental results to the Principal Investigator
• Publish papers in reputable journals/conferences
• Assist in preparing progress reports and research proposals
Qualifications
• Possess a recognized PhD degree in Electrical/ Electronic, Physics or Materials Engineering
• He/she should ideally have a proven track record of publications in leading journals.
• Strong written and oral communication and presentation skills.
• Relevant experience in the field of CMOS nano-electronic devices and nano-fabrication technology would be an added advantage.
• Possess excellent communication and interpersonal skills to work with various stakeholders.
• Meticulous, able to work well under pressure and commitment to meet tight deadlines
• Open to fixed-term contract
