The Energy Research Institute @ NTU (ERI@N) invites applications for the position of Research Fellow.
Key Responsibilities:
- To conduct research on the development of GaN-based materials growth and device processing.
- Develop regrowth fabrication process using highly doped GaN structure to reduce the Ohmic contact resistance, preferably having worked in clean room process environment
- Support in the growth of GaN epistructures using MBE/MOCVD growth process technology.
- Electrical, structural, surface and optical characterization of III-Nitride semiconductor epiwafers
- Thorough analysis of the results and publish in high impact factor scientific journals.
- Independent handling of the project to meet the deliverables timely.
- Writing project proposal and technical reports to the funding agencies.
- Support PhD students and junior research staff in their research projects.
Job Requirements:
- PhD in Physics, Materials Science, Electrical and Electronic Engineering or related field
- Hands-on experience with III-Nitride semiconductor heterostructure growth and characterization, and preferably device processing in cleanroom and characterization tools.
- Self-driven and motivated person who is a good team player.
- Ability to adapt to changing priorities
- Fluent in English and competent in technical writing skills.
We regret that only shortlisted candidates will be notified.
