As a Principal NAND Device Engineering Lead or Manager in the Device Technology Development group at Singapore site of Micron Technology Inc., you will be responsible for analyzing the cell device characteristics, engineering memory device/array operation, and developing novel solutions for next generation NAND technologies in order to meet the required cell and array performance within project timelines. This is a senior role where you will lead array development activity with independent responsibilities and deliverables, optionally including management of engineers. You will have an exciting opportunity to be front and center in the development of the most cutting-edge NAND technologies and products in the world!
Your responsibilities will include, but are not limited to:
- Contribute to the device technology development of state of the art NAND cell, in particular by providing expertise in NAND Cell device physics and NAND memory array operation.
- Trim and waveform/algo innovations in order to improve Vt placement, performance and reliability. Utilize first principles device knowledge to develop novel array solutions.
- Perform electrical characterization of NAND cell arrays and test structures to identify device improvement directions at component level as well as system level.
- Contributing to the cell improvement effort (performance, reliability) by providing feedback to Process Integration and Design teams
- Strong collaboration is required with design, product, system and probe engineers.
Requirements:
Successful candidates for this position will have:
- Ph.D or Master’s degree in Electrical engineering with focus on Semiconductor devices
- A strong understanding and experience with nonvolatile memories and in particular, NAND device physics. Experience with NAND cell trim and algo development is required. (Preferably >5 years experience)
- Solid communication and reporting abilities.
- The ability to be highly skilled at driving for results in a time-constrained environment.
