JOB DESCRIPTION
NGTC (National GaN Technology Centre) in IME is looking for a talent to join its Technology Team for R&D developments. The qualified candidate has opportunities to participate in technical tasks related to RF GaN foundry for the applications from microwave up to THz. This includes the following area:
- Develop and maintain models in foundry PDK.
- Resolve simulation issues caused by model.
- Support on-wafer RF & Load Pull characterization of devices and data analysis.
- Validate model and Support model deployments in PDK and simulation tools.
- Contribute or support MMIC demo. circuits design for foundry promotion.
JOB REQUIREMENT
- PhD degree in EE with relevant course/research in electrical, semiconductor and microwave engineering.
- At least 3 years hand-on experiences in RF device modeling.
- In-depth knowledges of III-V based FET model (e.g., CFET, EEHEMT, Angelov, ASM, etc.) and parameter extraction methodologies.
- Good understanding of compact and behavioural model for HEMTs, and passive components.
- Solid mathematic skillsets in data/curve fitting, and convergence analysis in time/frequency domain RFIC/MMIC simulations.
- Hand-on experiences in Maury/Focus load pull hardware and software for on-wafer measurement is plus.
- Good understanding on calibration and de-embedding procedures
- Practical experiences in MMIC design and testing.
- Good experiences in defining test plans and parameters (DC, Pulse IV/RF, Load Pull, etc.) for device modeling.
- Working experiences in developing foundry PDK is plus.
OTHER ESSENTIAL ATTRIBUTES
- Entry-level in wireless communication theory.
- Good team-player personality
