JOB DESCRIPTION
NGTC (National GaN Technology Centre) in IME is looking for a talent to join its Technology Team for R&D developments. The qualified candidate has opportunities to participate in technical tasks related to RF GaN foundry for the applications up to 140 GHz. This includes the following area:
- Perform experiments to analyse and determine the root cause of failure in GaN devices (e.g. Transistors, Capacitors, Inductors, Resistors, and Diode) and circuits.
- Join the cross-functional teams on appropriate FMEA (Failure Mode Effects & Analysis) techniques to establish an understanding of the failure mechanisms of the devices.
- Drives device reliability/qualification activities, and data correlation studies.
- Manage large & disparate data sets and distil information into concise presentations with possible recommendations as quick feedback to the engineering team.
- Develop new FMEA techniques to improve detection capability, productivity or process optimization.
JOB REQUIREMENT
- PhD degree in Electrical Engineering (EE), Materials Science or Physics, MS degree in EE with 5+ years or BS degree with 7+ years of relevant working experiences.
- > three-year of FMEA experience in step-by-step approach for identifying all possible failures in the semiconductor industry.
- FMEA experience in Wide-Bandgap (WBG) devices (GaAs, GaN) is plus.
- Good knowledge of WBG device physics and its fabrication is a big plus.
- In-Depth understanding of FMEA techniques (e.g. delaying of devices/chips by wet etching or plasma etching and its data analysis) with good hands-on experience in using different analytical techniques (e.g. SIMS, XPS, AES, SEM, FIB-SEM, TEM, AFM, etc.)
- Understanding of semiconductor device qualification standard such as JEDEC.
- Excellent report writing and presentation skills, able to robustly defend data analysis and conclusions where necessary.
OTHER ESSENTIAL ATTRIBUTES
- Good team-player personality, able to pro-actively engage with other groups
- Self-motivated, energetic, able to delivery in time
