Roles and Responsibilities:
- TCAD modeling, simulation, and innovative design of high power electronics devices, as well as device characterization.
- Develop and simulate high power SiC MOSFETs (planar, trench, Super-Junction MOSFET, IGBT) with a blocking voltage exceeding 1.2K using the industry-standard Synopsys/Silvaco simulator.
- Create and simulate practical & efficient junction terminations.
- Model transport and carrier scattering in devices operating under extreme ambient conditions.
- Serve as a valuable resource for colleagues with lesser TCAD power electronics experience and take lead in group projects with managing risks & resource requirements.
- Foster close collaborations with both internal and external customers to fully understand customer issues and requirements.
Job Requirements:
- PhD Degree in Electrical Engineering or related field.
- >2-3 years industrial experience for high power devices design and modeling.
- Thorough understanding of different types of high-voltage, high-power MOSFETs including Planar, Trench, Super-Junction MOSFETs, and IGBTs, with a focus on design and device characterizations.
- Hands-on skill in designing MOSFET/diode layouts.
- Excellent communication skills to effectively engage with customers, address their needs, resolve issues, and meet demands.
