Job Description:
- Develop epitaxial processes for selective and non-selective growth of Ge and SiGe layers on Si substrates.
- Improve baseline processes for high-quality SiGe and Ge epitaxy: control uniformity and thickness and minimize threading dislocation density.
- Design epitaxial structures and develop processes for Ge and SiGe photodetectors (PD) and electro-absorption modulators (EAM) devices, integrating Ge/SiGe devices into Silicon photonic circuits.
- Troubleshoot to maintain tool and process quality. Prepare Standard Operating Procedures (SOPs), Out-of-Control Plans, and other technical documentation to maintain processes and tools.
- Perform metrology and characterization of SiGe and Ge epilayers (e.g., dopant and thickness uniformity, surface roughness, crystal quality, stress, carrier lifetime, etc.).
- Correlate SiGe and Ge crystal defects (type and density) with device performance and yield, and with device processing conditions.
- Provide technical support for technology transfer and process release requirements.
- Prepare technical presentations and papers for meetings, conferences and journals.
Requirements:
- PhD degree in Materials Science and Engineering, Physics, Chemical Engineering, Chemistry, Microelectronics Engineering, or closely related fields are welcome to apply.
- Prior 3 to 5 years direct experience in SiGe/Ge epitaxy and materials characterization.
- Working knowledge and prior hands-on experience in Design of Experiments (DOE) methodologies, statistical root cause analysis, and problem-solving methods, is desired.
- Understanding of epitaxial system hardware is advantageous.
- Knowledge and prior hands-on experience on basic process characterization techniques such as SEM/TEM, EDX, SIMS, AFM, Ellipsometry is advantageous.
- Possess good interpersonal and oral/written communication skills, with ability to deliver clear and concise messages to both internal and external stakeholders.
