ROLE:
IME A*Star is currently working on establishing a hybrid fabrication platform for 150mm & 200mm Silicon Carbide (SiC) power MOSFETs as part of the new SiC R&D program. The main objective of this program is to advance 200mm SiC technologies in various areas, such as epitaxy, device design, process integration for various types of power MOSFETs and power module packaging. The ultimate aim is to drive disruptive innovations in power device research, with a specific focus on >1.7KV power MOSFETs. These innovations will have significant applications in enhancing automotive technologies, vehicle electrification, safety measures, sustainable energy grids, data centers, and industrial & aerospace automation. Key aspects for this deputy lead for wide-bandgap device integration role include the development and integration of several modules, such as gate oxidation, implantation, implant activation, layout design verification, lithography, ohmic contact formation etc are essential. We are actively looking for individual with extensive industry experience in device physics and process integration to join our team. The candidate will contribute to process integration, device layout design, design verification, E-test and module process related data analysis, yield enhancement, and device physics.
RESPONSIBILITIES:
• To lead development of SiC power technologies, serving as both front and back-end process integration in collaboration with advanced module development team. And aim
to grow this team to ~10 headcounts in the next 3 years.
• Optimize and customize process flows for individual SiC products
• Identify and resolve process integration issues and related problems
• Develop specific or derivative processes to meet customer needs
• Support new designs by conducting module characterization and developing effective design rules
• Define and implement measures to enhance stability, yield, reliability, and reduce development costs & time
• Plan and implement sustainable corrective actions to address process deviations
• Continuously monitor and utilize expertise in process and equipment capabilities to achieve optimal device performance
• Determine the correct and effective way to deliver processes, functional devices, and other items to multiple customers
• Perform project management tasks and conduct data analysis
REQUIREMENTS:
• MS/PhD Degree in Electrical Engineering or related field
• >3 years industrial experience for MOSFET process integration and device Physics
• Highly proactive, self-motivated, and results-oriented professional with the ability to make efficient contributions to and lead technical discussions
• Extensive expertise in material and process integration
• Comprehensive understanding of semiconductor materials and MOSFET device physics
• Proficient in teaching and knowledge transfer to junior staff members
• Strong communication skills to effectively convey information about process module integration for device fabrication and with customers
• Excellent analytical skills for interpreting process and device data; combined with strong presentation abilities.
