As a Senior NAND Cell Device Engineer, in the Singapore Device Technology Development group of Micron Technology Inc., you will be responsible for electrical characterization of the NAND memory cell and develop novel device solutions for cutting-edge 3D-NAND flash technologies. You will have an exciting opportunity to develop best-in class non-volatile memories and products in the world!
Job responsibilities:
- Develop an understanding of performance & reliability requirements for new NAND cells and help refine requirements, as necessary.
- Characterize NAND Memory cell and array properties to identify device improvement directions.
- Analyse automated tester data to establish product qualification gaps, identify new device corners and improve detection capabilities.
- Contribute to the architecture and process definition for state-of-the-art NAND cell, by providing expertise in NAND device physics and array operation.
- Collaborate effectively with process, integration, product, and design engineers, to address NAND memory cell deficits and deliver improvement roadmaps.
Requirements:
- M.S or Ph.D. in Electrical or Electronics Engineering, Physics or Materials Science Engineering or similar.
- 3+ years of work experience in CMOS or non-volatile memory is preferred.
- Deep understanding of semiconductor device physics and processes.
- Knowledge of statistical methods for experiment design and data analysis.
- Solid communication and reporting abilities.
- The ability to be highly skilled at driving for results.
