Total 10 regional recruitment lead job vacancies in Art / Design / Entertainment category in Ngee Ann Polytechnic, Clementi Campus

ROLE:
IME is leading the effort to establish the industry leading Silicon Carbide R&D program. This program aims to advance 200mm Silicon Carbide technologies in various areas, such as epitaxy, device design, process integration & fabrication, and power module packaging. The main objective is to drive disruptive innovations in power device research, with a specific focus on >1.2KV power MOSFETs. These innovations are intended to enhance automotive technologies, vehicle electrification, safety measures, sustainable energy grids, and industrial automation. Key aspects to demonstrate for this role include high power device design, novel device concepts, doping design, gate oxidation, and wide-bandgap process simulations. To achieve this, we are seeking individual with extensive industry experience in using Synopsys/Silvaco TCAD simulator, relevant device characterization skills, design simulation development abilities, a willingness to mentor junior staffs, and strong interpersonal skills. The candidate will contribute to the wide-bandgap & Silicon Carbide team by utilizing their device knowledge, guiding team on device characterization, implementing state-of-art Silicon Carbide power MOSFETs (Planar, Trench & Super-Junction), and innovative novel power MOSFETs for future applications.

RESPONSIBILITIES:

• TCAD modeling & simulation, novel high power device design, simulation, and device characterization

• Design and simulate high voltage Silicon Carbide MOSFETs (planar, trench, SJ MOSFET, IGBT) with a blocking voltage of >1.2K using Synopsys/Silvaco simulator

• Design & simulate practical and effective junction terminations

• Provide guidances on device structure, optimizing cell, power/performance analysis, process risk assessment, and recommendations for experimental split and improvement

• Develop and apply fundamental MOS device physics-based TCAD modelling & electric field management to calculate band structure, carrier transport, blocking voltage,
switching properties, and thermal management for vertical power devices in the presence of interface state density, gate oxide defects, and defects in Silicon Carbide

• Model transport and carrier scattering in devices operating in extreme ambient conditions

• Collaborate with diverse teams, including process integration, characterization, and circuit design engineers, to analyze and troubleshoot device-related issues during
development

• Serve as a resource for colleagues with less experience, and lead small projects with manageable risks and resource requirements

• Work closely with both internal and external customers to understand customer issues and align their demands. And grow this wide-bandgap team to ~5 headcounts in the
next 3 years.

JOB REQUIREMENTS:

• PhD in Electrical Engineering or related field

• >10 years industrial experience for high power device design and modeling

• Deep knowledge of high voltage, high power MOSFETs (including Planar, Trench, S-J MOSFETs, and IGBTs) design and device characterization on 4H-SiC & GaN substrates.

• Solid understanding of wide-bandgap semiconductor materials and the strong physics of MOSFET devices

• Ability to teach and transfer knowledge to junior staff members

• Ability to effectively communicate and plan with customers regarding their needs, issues, and demands

ROLE:
IME is leading the effort to establish the industry leading Silicon Carbide R&D program. This program aims to advance 200mm Silicon Carbide technologies in various areas, such as epitaxy, device design, process integration & fabrication, and power module packaging. The main objective is to drive disruptive innovations in power device research, with a specific focus on >1.2KV power MOSFETs. These innovations are intended to enhance automotive technologies, vehicle electrification, safety measures, sustainable energy grids, and industrial automation. Key aspects to demonstrate for this role include high power device design, novel device concepts, doping design, gate oxidation, and wide-bandgap process simulations. To achieve this, we are seeking individual with extensive industry experience in using Synopsys/Silvaco TCAD simulator, relevant device characterization skills, design simulation development abilities, a willingness to mentor junior staffs, and strong interpersonal skills. The candidate will contribute to the wide-bandgap & Silicon Carbide team by utilizing their device knowledge, guiding team on device characterization, implementing state-of-art Silicon Carbide power MOSFETs (Planar, Trench & Super-Junction), and innovative novel power MOSFETs for future applications.

RESPONSIBILITIES:

• TCAD modeling & simulation, novel high power device design, simulation, and device characterization

• Design and simulate high voltage Silicon Carbide MOSFETs (planar, trench, SJ MOSFET, IGBT) with a blocking voltage of >1.2K using Synopsys/Silvaco simulator

• Design & simulate practical and effective junction terminations

• Provide guidances on device structure, optimizing cell, power/performance analysis, process risk assessment, and recommendations for experimental split and improvement

• Develop and apply fundamental MOS device physics-based TCAD modelling & electric field management to calculate band structure, carrier transport, blocking voltage,
switching properties, and thermal management for vertical power devices in the presence of interface state density, gate oxide defects, and defects in Silicon Carbide

• Model transport and carrier scattering in devices operating in extreme ambient conditions

• Collaborate with diverse teams, including process integration, characterization, and circuit design engineers, to analyze and troubleshoot device-related issues during
development

• Serve as a resource for colleagues with less experience, and lead small projects with manageable risks and resource requirements

• Work closely with both internal and external customers to understand customer issues and align their demands. And grow this wide-bandgap team to ~5 headcounts in the
next 3 years.

JOB REQUIREMENTS:

• PhD in Electrical Engineering or related field

• >10 years industrial experience for high power device design and modeling

• Deep knowledge of high voltage, high power MOSFETs (including Planar, Trench, S-J MOSFETs, and IGBTs) design and device characterization on 4H-SiC & GaN substrates.

• Solid understanding of wide-bandgap semiconductor materials and the strong physics of MOSFET devices

• Ability to teach and transfer knowledge to junior staff members

• Ability to effectively communicate and plan with customers regarding their needs, issues, and demands

Product area

Part of Google Cloud, Mandiant is a recognized leader in dynamic cyber defense, threat intelligence and incident response services. Mandiant's cybersecurity expertise has earned the trust of security professionals and company executives around the world. Our unique combination of renowned frontline experience responding to some of the most complex breaches, nation-state grade threat intelligence, machine intelligence, and the industry's best security validation ensures that Mandiant knows more about today's advanced threats than anyone.

Job description

As a Security Consultant, you will be responsible for helping clients effectively prepare for, proactively mitigate, and detect and respond to cyber security threats. Security Consultants have an understanding of computer science, operating system functionality and networking, cloud services, corporate network environments and how to apply this knowledge to cyber security threats.

As a Security Consultant, you could work on engagements including assisting clients in navigating technically complex and high-profile incidents, performing forensic analysis, threat hunting, and malware triage. You may also test client networks, applications and devices by emulating the latest techniques to help them defend against threats, and will be the technical advocate for information security requirements and provide an in-depth understanding of the information security domain. You will also articulate and present complex concepts to business stakeholders, executive leadership, and technical contributors and successfully lead complex engagements alongside cross functional teams.

Qualifications

Job responsibilities

• Create and manage resource plans to support project delivery. Manage and execute projects within the budget and timeline and leverage modern project management techniques.
• Engage with stakeholders, users, and subject matter experts to pursue and deliver projects. Lead a high-performing engagement delivery team, and encourage an accountable performance culture.
• Create and maintain project plans, as well as provide accurate and timely reports on project status. Focus on objectives, capabilities, and service results and benefits. Identify and manage project risks and opportunities.
• Engage with internal stakeholders and customers on consulting pre-sales and support actions to enhance visibility on the consulting practice.
• Adhere to enterprise policies and systems, including finance, safety, environmental, risk, and compliance. Demonstrate safety behaviors consistent with enterprise strategies, and manage projects according to accountability requirements.

Minimum qualifications

• Bachelor's degree in Information Security, Computer Science, a related field, or equivalent practical experience.
• 4 years of experience in project management building cyber-defense capabilities for multiple customers across different industry verticals.
• Experience in managing projects within technology programs with multiple delivery partners in regulated environments, operational service delivery, or aviation.

Preferred qualifications

• 9 years of experience in project management building cyber-defense capabilities for multiple customers across different industry verticals.
• Experience with project management tools.
• Understanding of the components that comprise an information security program, security policies, procedures, and cyber security standards such as ISO27000, NIST CSF, BNM RMIT, MAS TRM, etc.
• Ability to develop and maintain project risk, issue registers, identify and report variances and issues, provide assistance and coordination for risk mitigation.
• Excellent communication skills, with the ability to communicate with executives and stakeholders from diverse backgrounds.
• Excellent business acumen and decision-making skills in a service delivery environment.

ROLE:
IME is leading the effort to establish the industry leading Silicon Carbide R&D program. This program aims to advance 200mm Silicon Carbide technologies in various areas, such as epitaxy, device design, process integration & fabrication, and power module packaging. The main objective is to drive disruptive innovations in power device research, with a specific focus on >1.2KV power MOSFETs. These innovations are intended to enhance automotive technologies, vehicle electrification, safety measures, sustainable energy grids, and industrial automation. Key aspects to demonstrate for this role include high power device design, novel device concepts, doping design, gate oxidation, and wide-bandgap process simulations. To achieve this, we are seeking individual with extensive industry experience in using Synopsys/Silvaco TCAD simulator, relevant device characterization skills, design simulation development abilities, a willingness to mentor junior staffs, and strong interpersonal skills. The candidate will contribute to the wide-bandgap & Silicon Carbide team by utilizing their device knowledge, guiding team on device characterization, implementing state-of-art Silicon Carbide power MOSFETs (Planar, Trench & Super-Junction), and innovative novel power MOSFETs for future applications.

RESPONSIBILITIES:

• TCAD modeling & simulation, novel high power device design, simulation, and device characterization

• Design and simulate high voltage Silicon Carbide MOSFETs (planar, trench, SJ MOSFET, IGBT) with a blocking voltage of >1.2K using Synopsys/Silvaco simulator

• Design & simulate practical and effective junction terminations

• Provide guidances on device structure, optimizing cell, power/performance analysis, process risk assessment, and recommendations for experimental split and improvement

• Develop and apply fundamental MOS device physics-based TCAD modelling & electric field management to calculate band structure, carrier transport, blocking voltage,
switching properties, and thermal management for vertical power devices in the presence of interface state density, gate oxide defects, and defects in Silicon Carbide

• Model transport and carrier scattering in devices operating in extreme ambient conditions

• Collaborate with diverse teams, including process integration, characterization, and circuit design engineers, to analyze and troubleshoot device-related issues during
development

• Serve as a resource for colleagues with less experience, and lead small projects with manageable risks and resource requirements

• Work closely with both internal and external customers to understand customer issues and align their demands. And grow this wide-bandgap team to ~5 headcounts in the
next 3 years.

JOB REQUIREMENTS:

• PhD in Electrical Engineering or related field

• >10 years industrial experience for high power device design and modeling

• Deep knowledge of high voltage, high power MOSFETs (including Planar, Trench, S-J MOSFETs, and IGBTs) design and device characterization on 4H-SiC & GaN substrates.

• Solid understanding of wide-bandgap semiconductor materials and the strong physics of MOSFET devices

• Ability to teach and transfer knowledge to junior staff members

• Ability to effectively communicate and plan with customers regarding their needs, issues, and demands

ROLE:
IME is leading the effort to establish the industry leading Silicon Carbide R&D program. This program aims to advance 200mm Silicon Carbide technologies in various areas, such as epitaxy, device design, process integration & fabrication, and power module packaging. The main objective is to drive disruptive innovations in power device research, with a specific focus on >1.2KV power MOSFETs. These innovations are intended to enhance automotive technologies, vehicle electrification, safety measures, sustainable energy grids, and industrial automation. Key aspects to demonstrate for this role include high power device design, novel device concepts, doping design, gate oxidation, and wide-bandgap process simulations. To achieve this, we are seeking individual with extensive industry experience in using Synopsys/Silvaco TCAD simulator, relevant device characterization skills, design simulation development abilities, a willingness to mentor junior staffs, and strong interpersonal skills. The candidate will contribute to the wide-bandgap & Silicon Carbide team by utilizing their device knowledge, guiding team on device characterization, implementing state-of-art Silicon Carbide power MOSFETs (Planar, Trench & Super-Junction), and innovative novel power MOSFETs for future applications.

RESPONSIBILITIES:

• TCAD modeling & simulation, novel high power device design, simulation, and device characterization

• Design and simulate high voltage Silicon Carbide MOSFETs (planar, trench, SJ MOSFET, IGBT) with a blocking voltage of >1.2K using Synopsys/Silvaco simulator

• Design & simulate practical and effective junction terminations

• Provide guidances on device structure, optimizing cell, power/performance analysis, process risk assessment, and recommendations for experimental split and improvement

• Develop and apply fundamental MOS device physics-based TCAD modelling & electric field management to calculate band structure, carrier transport, blocking voltage,
switching properties, and thermal management for vertical power devices in the presence of interface state density, gate oxide defects, and defects in Silicon Carbide

• Model transport and carrier scattering in devices operating in extreme ambient conditions

• Collaborate with diverse teams, including process integration, characterization, and circuit design engineers, to analyze and troubleshoot device-related issues during
development

• Serve as a resource for colleagues with less experience, and lead small projects with manageable risks and resource requirements

• Work closely with both internal and external customers to understand customer issues and align their demands. And grow this wide-bandgap team to ~5 headcounts in the
next 3 years.

JOB REQUIREMENTS:

• PhD in Electrical Engineering or related field

• >10 years industrial experience for high power device design and modeling

• Deep knowledge of high voltage, high power MOSFETs (including Planar, Trench, S-J MOSFETs, and IGBTs) design and device characterization on 4H-SiC & GaN substrates.

• Solid understanding of wide-bandgap semiconductor materials and the strong physics of MOSFET devices

• Ability to teach and transfer knowledge to junior staff members

• Ability to effectively communicate and plan with customers regarding their needs, issues, and demands

ROLE:
IME is leading the effort to establish the industry leading Silicon Carbide R&D program. This program aims to advance 200mm Silicon Carbide technologies in various areas, such as epitaxy, device design, process integration & fabrication, and power module packaging. The main objective is to drive disruptive innovations in power device research, with a specific focus on >1.2KV power MOSFETs. These innovations are intended to enhance automotive technologies, vehicle electrification, safety measures, sustainable energy grids, and industrial automation. Key aspects to demonstrate for this role include high power device design, novel device concepts, doping design, gate oxidation, and wide-bandgap process simulations. To achieve this, we are seeking individual with extensive industry experience in using Synopsys/Silvaco TCAD simulator, relevant device characterization skills, design simulation development abilities, a willingness to mentor junior staffs, and strong interpersonal skills. The candidate will contribute to the wide-bandgap & Silicon Carbide team by utilizing their device knowledge, guiding team on device characterization, implementing state-of-art Silicon Carbide power MOSFETs (Planar, Trench & Super-Junction), and innovative novel power MOSFETs for future applications.

RESPONSIBILITIES:

• TCAD modeling & simulation, novel high power device design, simulation, and device characterization

• Design and simulate high voltage Silicon Carbide MOSFETs (planar, trench, SJ MOSFET, IGBT) with a blocking voltage of >1.2K using Synopsys/Silvaco simulator

• Design & simulate practical and effective junction terminations

• Provide guidances on device structure, optimizing cell, power/performance analysis, process risk assessment, and recommendations for experimental split and improvement

• Develop and apply fundamental MOS device physics-based TCAD modelling & electric field management to calculate band structure, carrier transport, blocking voltage,
switching properties, and thermal management for vertical power devices in the presence of interface state density, gate oxide defects, and defects in Silicon Carbide

• Model transport and carrier scattering in devices operating in extreme ambient conditions

• Collaborate with diverse teams, including process integration, characterization, and circuit design engineers, to analyze and troubleshoot device-related issues during
development

• Serve as a resource for colleagues with less experience, and lead small projects with manageable risks and resource requirements

• Work closely with both internal and external customers to understand customer issues and align their demands. And grow this wide-bandgap team to ~5 headcounts in the
next 3 years.

JOB REQUIREMENTS:

• PhD in Electrical Engineering or related field

• >10 years industrial experience for high power device design and modeling

• Deep knowledge of high voltage, high power MOSFETs (including Planar, Trench, S-J MOSFETs, and IGBTs) design and device characterization on 4H-SiC & GaN substrates.

• Solid understanding of wide-bandgap semiconductor materials and the strong physics of MOSFET devices

• Ability to teach and transfer knowledge to junior staff members

• Ability to effectively communicate and plan with customers regarding their needs, issues, and demands

ROLE:
IME is leading the effort to establish the industry leading Silicon Carbide R&D program. This program aims to advance 200mm Silicon Carbide technologies in various areas, such as epitaxy, device design, process integration & fabrication, and power module packaging. The main objective is to drive disruptive innovations in power device research, with a specific focus on >1.2KV power MOSFETs. These innovations are intended to enhance automotive technologies, vehicle electrification, safety measures, sustainable energy grids, and industrial automation. Key aspects to demonstrate for this role include high power device design, novel device concepts, doping design, gate oxidation, and wide-bandgap process simulations. To achieve this, we are seeking individual with extensive industry experience in using Synopsys/Silvaco TCAD simulator, relevant device characterization skills, design simulation development abilities, a willingness to mentor junior staffs, and strong interpersonal skills. The candidate will contribute to the wide-bandgap & Silicon Carbide team by utilizing their device knowledge, guiding team on device characterization, implementing state-of-art Silicon Carbide power MOSFETs (Planar, Trench & Super-Junction), and innovative novel power MOSFETs for future applications.

RESPONSIBILITIES:

• TCAD modeling & simulation, novel high power device design, simulation, and device characterization

• Design and simulate high voltage Silicon Carbide MOSFETs (planar, trench, SJ MOSFET, IGBT) with a blocking voltage of >1.2K using Synopsys/Silvaco simulator

• Design & simulate practical and effective junction terminations

• Provide guidances on device structure, optimizing cell, power/performance analysis, process risk assessment, and recommendations for experimental split and improvement

• Develop and apply fundamental MOS device physics-based TCAD modelling & electric field management to calculate band structure, carrier transport, blocking voltage,
switching properties, and thermal management for vertical power devices in the presence of interface state density, gate oxide defects, and defects in Silicon Carbide

• Model transport and carrier scattering in devices operating in extreme ambient conditions

• Collaborate with diverse teams, including process integration, characterization, and circuit design engineers, to analyze and troubleshoot device-related issues during
development

• Serve as a resource for colleagues with less experience, and lead small projects with manageable risks and resource requirements

• Work closely with both internal and external customers to understand customer issues and align their demands. And grow this wide-bandgap team to ~5 headcounts in the
next 3 years.

JOB REQUIREMENTS:

• PhD in Electrical Engineering or related field

• >10 years industrial experience for high power device design and modeling

• Deep knowledge of high voltage, high power MOSFETs (including Planar, Trench, S-J MOSFETs, and IGBTs) design and device characterization on 4H-SiC & GaN substrates.

• Solid understanding of wide-bandgap semiconductor materials and the strong physics of MOSFET devices

• Ability to teach and transfer knowledge to junior staff members

• Ability to effectively communicate and plan with customers regarding their needs, issues, and demands

Life at Grab

At Grab, every Grabber is guided by The Grab Way, which spells out our mission, how we believe we can achieve it, and our operating principles - the 4Hs: Heart, Hunger, Honour and Humility. These principles guide and help us make decisions as we work to create economic empowerment for the people of Southeast Asia.

About the Team

GrabDefence is a new team in the Integrity Group, building Grab’s first B2B enterprise technology business. Through GrabDefence, we are opening up our fraud detection and prevention technology to our partners to help them battle fraud and fortify trust in the digital ecosystem.

GrabDefence is Grab’s own Fraud detection and prevention technology platform (also known as Risk Management Platform) for companies that want to protect themselves from fraudsters and fraudulent transactions. Drawing from Grab’s own experience operating in various verticals across the region and battling various fraud attempts, GrabDefence seeks to help companies build Trust in their platforms. GrabDefence is introducing new product lines such as AML, Chargeback protection, and eKYC solutions to its product portfolio, and all of these cutting-edge solutions based on AI will be launched this year, providing the applicant with a tremendous learning and growth opportunity.

This is your opportunity to be part of an exciting new team venturing into a new domain and be involved from strategy to execution. We are looking for driven, like-minded individuals who thrive in an environment of rapid experimentation to join us!

Get to know the Role:

GrabDefence (GD) is looking for an experienced Solution lead to be part of a dynamic growing team, which thrives on challenges and is looking for an opportunity to take their sales experience to the next level. We’re looking for an entrepreneurial individual who will play a central role in our go-to-market and customer engagement as well as building out our customer pipeline.

As the Solution Architect, you’ll be responsible for;

• Develop solutions and organizing, planning, creating & delivering compelling proof of concept demonstrations - translating the solutions into meaningful experiments supported by business cases
• Craft solution offerings to solve customers challenges and go-to-market plays that include business and commercial cases, first call decks, marketing material and other repeatable assets
• Prepare and deliver the business value propositions for customers, including proposal writing, presentation, conducting Proof-of-Concept to showcase GD’ technical feasibility
• Describe to customers alternatives in terms of cost, benefit, and risk when several options are available, i.e., you should be able to help customers make build/buy decisions. You are to operate as a knowledge broker and trusted advisor on Enterprise anti-fraud systems offerings and provide guidance, direction, and assistance on complex sales engagements.
• Ensuring solutions stated in the Statement of Work are best practice and in line with customer requirements
• Working closely with Sales to ensure successful closure of the sales process including responding to RFI’s & RFP’s
• Liaising with the broader team, including PMs, Engineering, Analytics and Strategy team to provide feedback from clients about product requirements
• Keeping abreast of market trends and product & competitor landscapes
• Comfortable negotiating technical aspects with the C-suite
• Solid sales acumen, go getter and must exhibit high degree of sales ethics and integrity.
• To perform this role well, the candidate needs to have strong technology-oriented problem solving and communication skills, as well as the capability to learn and understand the fraud domain and client challenges.

You will report to the Head of GrabDefence, Enterprise Sales and Strategy

The must haves:

• The candidate must understand the Data Platform and how the underlying platform is built to serve real-time use cases. Specific experiences in financial risk management, anti-fraud would be an advantage,
• Experience working within the technology industry is highly desired, fraud and risk experience a plus. If you’ve gotten your hands dirty with lots of data, it's great.
• Experience working with business leaders to define and solve real industry or customer challenges especially in Southeast Asia whilst understanding cultural nuances.
• Strong verbal, presentation and written communications skills are a must.
• [7]+ years’ experience in customer-facing pre sales or solution architect role, consulting, program/product management, IT solutions development experience or equivalent consultative-selling role

Qualifications

Education – BA or above required, ​​preferably in Computer Science, Engineering or a related field

Job Description & Requirements:

Responsibilities :

· Develop creative and well thought through design solutions

· Provide concept thinking and analysis for a project being proposed

· Provide necessary presentation materials such as Powerpoint presentation slides, presentation packages etc. to present and sell creative solutions to client.

· Ensure all design changes and solutions are well implemented and coordinated into the project design documentation.

· Monitor design intent progression on site.

· Lead and mentor the Junior designers.

· Develop and implement the strategic initiatives aimed at ensuring the overall success of projects

· Assist Associate / Lead Designer or Design Director in managing interior designers' schedule and deliverables.

· Any other ad hoc duties as assigned.

Job Requirements :

· Min 8-10 years' experience in corporate office interior design.

· Bachelor's Degree in Interior Design, Architecture or its equivalent.

· Extensive knowledge of design detailing and construction methodology.

· Strong in conceptual design and space planning skills

· Able to work as part of a team independently; work under pressure and with a sense of urgency to meet tight deadlines.

· Service-oriented with excellent interpersonal,communication and presentation skills.

Proficient in Sketchup, Photoshop, AutoCad and MS Office.

Interested applicants are invited to apply directly at the NUS Career Portal.

Your application will be processed only if you apply via NUS Career Portal.

We regret that only shortlisted candidates will be notified.

Job Description

AI Singapore (AISG) is a national AI programme launched by the National Research Foundation (NRF) to anchor deep national capabilities in Artificial Intelligence (AI).

The programme office is hosted by the National University of Singapore (NUS) and brings together all Singapore-based research institutions and the vibrant ecosystem of AI start-ups and companies developing AI products to perform use-inspired research, grow the knowledge, create the tools, and develop the talent to power Singapore's AI efforts.

The candidate will join a team of AI scientists, apprentices, data and software engineers/apprentices. With the team, he or she will experiment and build AI solutions that can help Singapore companies improve their businesses using AI.

The Senior Engineer/Tech Lead will be expected to provide technical leadership, drive collaboration with cross-functional teams within AI Products to design and resolve complex issues, engage stakeholders, manage, mentor and guide junior engineers in the projects.

Duties and Responsibilities

• Architect and develop scalable and reliable software and system applications/frameworks using engineering best practices and AI technologies
• Drive and maintain engineering, coding and DevOps/MLOps/CICD best practices, and documentation standards
• Work closely with Product Manager(s) to engage stakeholders, scope and drive product deliverables through Agile methodologies
• Utilise problem-solving skills to address and resolve user issues, with a focus on empathy
• Drive collaboration with cross-functional teams within AI Products to design and resolve complex issues
• Keep abreast of, and be able to evaluate application of technologies and trends in software development best practices and architectures (in software / AI)
• Manage, mentor and guide a team of engineers in the projects
• Contribute to community engagement activities such as sharing via technical session meet-ups and article write-ups, and participating in discussion forums

Qualifications

1. Degree in computer science, machine learning, AI, and other related fields
2. Experience in applying software design patterns to build scalable and reliable software systems
3. Experience in developing, deploying and maintaining production systems/APIs on cloud platforms such as AWS, Google Cloud, or Microsoft Azure
4. Experience in AI/Machine learning frameworks such as Tensorflow and Pytorch
5. Experience in driving software development using Agile methodologies
6. Experience with leading other engineers in a software development project
7. Experience with applying best practices to source code repository management
8. Previous working experience in Large Language Models will be advantageous
9. Previous experience in contributing to open-source projects will be advantageous
10. Data story-telling, information visualisation/UX and technical writing skills