Scientist (SiC MOS Gate Interface & Stack Process), (SiC), IME
ROLE:
A*STAR-IME is spearheading the establishment of the Silicon Carbide (SiC) R&D program. This initiative aims to advance 200mm Silicon Carbide technologies across various areas including epitaxy, device design, process integration & fabrication, and power module packaging. The primary goal is to catalyze disruptive innovations in po...