Total 22 Senior Executive design art job vacancies in Singapore

Roles and Responsibilities:

• TCAD modeling, simulation, and innovative design of high power electronics devices, as well as device characterization.
• Develop and simulate high power SiC MOSFETs (planar, trench, Super-Junction MOSFET, IGBT) with a blocking voltage exceeding 1.2K using the industry-standard Synopsys/Silvaco simulator.
• Create and simulate practical & efficient junction terminations.
• Model transport and carrier scattering in devices operating under extreme ambient conditions.
• Serve as a valuable resource for colleagues with lesser TCAD power electronics experience and take lead in group projects with managing risks & resource requirements.
• Foster close collaborations with both internal and external customers to fully understand customer issues and requirements.

Job Requirements:

• PhD Degree in Electrical Engineering or related field.
• >2-3 years industrial experience for high power devices design and modeling.
• Thorough understanding of different types of high-voltage, high-power MOSFETs including Planar, Trench, Super-Junction MOSFETs, and IGBTs, with a focus on design and device characterizations.
• Hands-on skill in designing MOSFET/diode layouts.
• Excellent communication skills to effectively engage with customers, address their needs, resolve issues, and meet demands.

As part of IME Integrated Circuit Design and System Department, we are seeking a candidate with relevant experience in analog integrated circuit design. This candidate will contribute to developing analog circuit blocks e.g. low-power operational amplifiers, voltage/current references, and voltage regulators based on thorough topology analysis. This candidate will work closely with other team members for the circuit design, test verification, as well as system integration and validation for a broad range of innovative sensor systems.

Role & Responsibilities

• Circuit schematic design and simulation, layout supervision, pre-tapeout design verification, test plan development and chip measurement
• Work together with teams to investigate novel circuit/system solutions to create new inventions

Requirements

• Bachelor’s / Master’s degree in Electronic Engineering
• Good understanding of CMOS analog IC design methodologies
• Familiar with analog IC design and verification flow
• Industry experience would be a plus
• Familiar with the IC test equipment such as oscilloscope, spectrum analyzer, etc.
• Able to generate high-quality scientific publications and patents
• Team player, quick learner and self-driven

ROLE:
IME is leading the effort to establish the industry leading Silicon Carbide R&D program. This program aims to advance 200mm Silicon Carbide technologies in various areas, such as epitaxy, device design, process integration & fabrication, and power module packaging. The main objective is to drive disruptive innovations in power device research, with a specific focus on >1.2KV power MOSFETs. These innovations are intended to enhance automotive technologies, vehicle electrification, safety measures, sustainable energy grids, and industrial automation. Key aspects to demonstrate for this role include high power device design, novel device concepts, doping design, gate oxidation, and wide-bandgap process simulations. To achieve this, we are seeking individual with extensive industry experience in using Synopsys/Silvaco TCAD simulator, relevant device characterization skills, design simulation development abilities, a willingness to mentor junior staffs, and strong interpersonal skills. The candidate will contribute to the wide-bandgap & Silicon Carbide team by utilizing their device knowledge, guiding team on device characterization, implementing state-of-art Silicon Carbide power MOSFETs (Planar, Trench & Super-Junction), and innovative novel power MOSFETs for future applications.

RESPONSIBILITIES:

• TCAD modeling & simulation, novel high power device design, simulation, and device characterization

• Design and simulate high voltage Silicon Carbide MOSFETs (planar, trench, SJ MOSFET, IGBT) with a blocking voltage of >1.2K using Synopsys/Silvaco simulator

• Design & simulate practical and effective junction terminations

• Provide guidances on device structure, optimizing cell, power/performance analysis, process risk assessment, and recommendations for experimental split and improvement

• Develop and apply fundamental MOS device physics-based TCAD modelling & electric field management to calculate band structure, carrier transport, blocking voltage,
switching properties, and thermal management for vertical power devices in the presence of interface state density, gate oxide defects, and defects in Silicon Carbide

• Model transport and carrier scattering in devices operating in extreme ambient conditions

• Collaborate with diverse teams, including process integration, characterization, and circuit design engineers, to analyze and troubleshoot device-related issues during
development

• Serve as a resource for colleagues with less experience, and lead small projects with manageable risks and resource requirements

• Work closely with both internal and external customers to understand customer issues and align their demands. And grow this wide-bandgap team to ~5 headcounts in the
next 3 years.

JOB REQUIREMENTS:

• PhD in Electrical Engineering or related field

• >10 years industrial experience for high power device design and modeling

• Deep knowledge of high voltage, high power MOSFETs (including Planar, Trench, S-J MOSFETs, and IGBTs) design and device characterization on 4H-SiC & GaN substrates.

• Solid understanding of wide-bandgap semiconductor materials and the strong physics of MOSFET devices

• Ability to teach and transfer knowledge to junior staff members

• Ability to effectively communicate and plan with customers regarding their needs, issues, and demands

ROLE:
IME is leading the effort to establish the industry leading Silicon Carbide R&D program. This program aims to advance 200mm Silicon Carbide technologies in various areas, such as epitaxy, device design, process integration & fabrication, and power module packaging. The main objective is to drive disruptive innovations in power device research, with a specific focus on >1.2KV power MOSFETs. These innovations are intended to enhance automotive technologies, vehicle electrification, safety measures, sustainable energy grids, and industrial automation. Key aspects to demonstrate for this role include high power device design, novel device concepts, doping design, gate oxidation, and wide-bandgap process simulations. To achieve this, we are seeking individual with extensive industry experience in using Synopsys/Silvaco TCAD simulator, relevant device characterization skills, design simulation development abilities, a willingness to mentor junior staffs, and strong interpersonal skills. The candidate will contribute to the wide-bandgap & Silicon Carbide team by utilizing their device knowledge, guiding team on device characterization, implementing state-of-art Silicon Carbide power MOSFETs (Planar, Trench & Super-Junction), and innovative novel power MOSFETs for future applications.

RESPONSIBILITIES:

• TCAD modeling & simulation, novel high power device design, simulation, and device characterization

• Design and simulate high voltage Silicon Carbide MOSFETs (planar, trench, SJ MOSFET, IGBT) with a blocking voltage of >1.2K using Synopsys/Silvaco simulator

• Design & simulate practical and effective junction terminations

• Provide guidances on device structure, optimizing cell, power/performance analysis, process risk assessment, and recommendations for experimental split and improvement

• Develop and apply fundamental MOS device physics-based TCAD modelling & electric field management to calculate band structure, carrier transport, blocking voltage,
switching properties, and thermal management for vertical power devices in the presence of interface state density, gate oxide defects, and defects in Silicon Carbide

• Model transport and carrier scattering in devices operating in extreme ambient conditions

• Collaborate with diverse teams, including process integration, characterization, and circuit design engineers, to analyze and troubleshoot device-related issues during
development

• Serve as a resource for colleagues with less experience, and lead small projects with manageable risks and resource requirements

• Work closely with both internal and external customers to understand customer issues and align their demands. And grow this wide-bandgap team to ~5 headcounts in the
next 3 years.

JOB REQUIREMENTS:

• PhD in Electrical Engineering or related field

• >10 years industrial experience for high power device design and modeling

• Deep knowledge of high voltage, high power MOSFETs (including Planar, Trench, S-J MOSFETs, and IGBTs) design and device characterization on 4H-SiC & GaN substrates.

• Solid understanding of wide-bandgap semiconductor materials and the strong physics of MOSFET devices

• Ability to teach and transfer knowledge to junior staff members

• Ability to effectively communicate and plan with customers regarding their needs, issues, and demands

The Bioinformatics Institute (BII), Agency for Science, Technology and Research (A*STR) is seeking applications for an outstanding scientist in the field of quantum computing.

The Bioinformatics Institute (BII) is a computational biology research and postgraduate training institute as well as a national resource centre in bioinformatics within the Biomedical Research Council (BMRC) of A*STAR. Our scientists aim to understand the biomolecular mechanisms that underlie biomedical phenomena by developing sophisticated computational methods to support discovery from a secure and sustainable data hub to cross-disciplinary AI/ML analysis and data integration. We analyse a wide spectrum of biological and clinical data, including omics data (biomolecular sequences, expression profiles, epigenetics data), 3D structures of macromolecules, and biological tissue and macroscopic images from local and international academic, hospital and industry collaborators, public resources and also from in-house efforts. The institute has a vibrant and diverse research portfolio that includes infectious diseases, computational toxicology, precision medicine, oncology and drug discovery.

Job scope and responsibilities:

· Lead efforts in using quantum computing to analyze biomolecular and biomedical data (e.g. protein-ligand interactions, molecular docking, protein/RNA folding, molecular dynamics simulations, imaging, spatial ohmics) and couple it with methods such as quantum machine learning, quantum monte carlo etc, contributing to the development of a broader initiative encompassing AI in drug discovery.

· Collaborate closely with scientists within the Bioinformatics Institute, within A*STAR and within the local ecosystem.

· Lead or participate in research grant proposals.

Requirements:

· Minimum PhD in a related field.

· 5 years or more of postdoctoral experience in quantum computing, demonstrating outstanding research outcomes and strong publication records.

· The candidate must have experience in quantum computing software development/applications, especially with NISQ machines.

· Excellent communication (oral and written) and public speaking skills.

· Strong records of strategic thinking ability.

The above eligibility criteria are not exhaustive. A*STAR may include additional selection criteria based on its prevailing recruitment policies. These policies may be amended from time to time without notice. We regret that only shortlisted candidates will be notified.

We are looking for a self-motivated candidate with expertise in high performance digital design and system level architecture modeling to join our Heterogeneous System design team. This candidate will work closely with IME's advanced packing team and contribute to the exploration, optimization and development of multicore & multi-chip system using IME's heterogeneous integration platform.

Job Description:

Digital IC Design and system-level exploration:

• Contribute to the design and development of digital integrated circuits, ensuring they meet performance and functionality requirements.
• Emphasize a system-level perspective in the design process, considering overall system architecture and functionality.
• Incorporate Edge AI principles into digital IC designs, enabling efficient and intelligent processing at the edge of the network.
• RTL implementation for custom circuit design using Verilog/SystemVerilog
• Derive specs and implement necessary customized and highly efficient building blocks such as systolic array, data path controller, scheduler, integer and floating-point processing engine, FFT, etc which are frequency used in various computing architectures.

Simulation, Verification, and Implementation:

• Conduct thorough simulation and verification of digital designs to validate functionality and performance.
• Utilize FPGA in digital IC designs, leveraging its flexibility and reconfigurability for system emulation and architecture exploration
• Perform timing analysis and collaborate with the team to optimize designs for timing closure.
• Contribute to power analysis activities and implement power-efficient design techniques.

Publish research works in prestigious conferences and Journals such as ISSCC, VLSI Symp, A-SSCC, DAC, JSSC and TCAS-I/II.

Prepare detailed design documentation, including specifications, test plans, and reports.

Troubleshoot and debug digital IC designs with a focus on identifying and addressing system-level issues.

Bring creative and innovative solutions to design challenges, staying abreast of industry trends and emerging technologies.

Requirements:

• Master's, or Ph.D. in Electrical Engineering, Computer Engineering, or a related field. The candidate should have prior experiences in IC tape-out of digital/mixed signal SoC and system level modelling and optimization using industry standard tools from leading EDA vendors such as Cadence, Synopsis and Matlab.

As part of IME Integrated Circuit Design and System Department, we are seeking a candidate with relevant experience in analog integrated circuit design. This candidate will contribute to developing analog circuit blocks e.g. low-power operational amplifiers, voltage/current references, and voltage regulators based on thorough topology analysis. This candidate will work closely with other team members for the circuit design, test verification, as well as system integration and validation for a broad range of innovative sensor systems.

Role & Responsibilities

• Circuit schematic design and simulation, layout supervision, pre-tapeout design verification, test plan development and chip measurement
• Work together with teams to investigate novel circuit/system solutions to create new inventions

Requirements

• Bachelor’s / Master’s degree in Electronic Engineering
• Good understanding of CMOS analog IC design methodologies
• Familiar with analog IC design and verification flow
• Industry experience would be a plus
• Familiar with the IC test equipment such as oscilloscope, spectrum analyzer, etc.
• Able to generate high-quality scientific publications and patents
• Team player, quick learner and self-driven

ROLE:
IME is leading the effort to establish the industry leading Silicon Carbide R&D program. This program aims to advance 200mm Silicon Carbide technologies in various areas, such as epitaxy, device design, process integration & fabrication, and power module packaging. The main objective is to drive disruptive innovations in power device research, with a specific focus on >1.2KV power MOSFETs. These innovations are intended to enhance automotive technologies, vehicle electrification, safety measures, sustainable energy grids, and industrial automation. Key aspects to demonstrate for this role include high power device design, novel device concepts, doping design, gate oxidation, and wide-bandgap process simulations. To achieve this, we are seeking individual with extensive industry experience in using Synopsys/Silvaco TCAD simulator, relevant device characterization skills, design simulation development abilities, a willingness to mentor junior staffs, and strong interpersonal skills. The candidate will contribute to the wide-bandgap & Silicon Carbide team by utilizing their device knowledge, guiding team on device characterization, implementing state-of-art Silicon Carbide power MOSFETs (Planar, Trench & Super-Junction), and innovative novel power MOSFETs for future applications.

RESPONSIBILITIES:

• TCAD modeling & simulation, novel high power device design, simulation, and device characterization

• Design and simulate high voltage Silicon Carbide MOSFETs (planar, trench, SJ MOSFET, IGBT) with a blocking voltage of >1.2K using Synopsys/Silvaco simulator

• Design & simulate practical and effective junction terminations

• Provide guidances on device structure, optimizing cell, power/performance analysis, process risk assessment, and recommendations for experimental split and improvement

• Develop and apply fundamental MOS device physics-based TCAD modelling & electric field management to calculate band structure, carrier transport, blocking voltage,
switching properties, and thermal management for vertical power devices in the presence of interface state density, gate oxide defects, and defects in Silicon Carbide

• Model transport and carrier scattering in devices operating in extreme ambient conditions

• Collaborate with diverse teams, including process integration, characterization, and circuit design engineers, to analyze and troubleshoot device-related issues during
development

• Serve as a resource for colleagues with less experience, and lead small projects with manageable risks and resource requirements

• Work closely with both internal and external customers to understand customer issues and align their demands. And grow this wide-bandgap team to ~5 headcounts in the
next 3 years.

JOB REQUIREMENTS:

• PhD in Electrical Engineering or related field

• >10 years industrial experience for high power device design and modeling

• Deep knowledge of high voltage, high power MOSFETs (including Planar, Trench, S-J MOSFETs, and IGBTs) design and device characterization on 4H-SiC & GaN substrates.

• Solid understanding of wide-bandgap semiconductor materials and the strong physics of MOSFET devices

• Ability to teach and transfer knowledge to junior staff members

• Ability to effectively communicate and plan with customers regarding their needs, issues, and demands

ROLE:
IME is leading the effort to establish the industry leading Silicon Carbide R&D program. This program aims to advance 200mm Silicon Carbide technologies in various areas, such as epitaxy, device design, process integration & fabrication, and power module packaging. The main objective is to drive disruptive innovations in power device research, with a specific focus on >1.2KV power MOSFETs. These innovations are intended to enhance automotive technologies, vehicle electrification, safety measures, sustainable energy grids, and industrial automation. Key aspects to demonstrate for this role include high power device design, novel device concepts, doping design, gate oxidation, and wide-bandgap process simulations. To achieve this, we are seeking individual with extensive industry experience in using Synopsys/Silvaco TCAD simulator, relevant device characterization skills, design simulation development abilities, a willingness to mentor junior staffs, and strong interpersonal skills. The candidate will contribute to the wide-bandgap & Silicon Carbide team by utilizing their device knowledge, guiding team on device characterization, implementing state-of-art Silicon Carbide power MOSFETs (Planar, Trench & Super-Junction), and innovative novel power MOSFETs for future applications.

RESPONSIBILITIES:

• TCAD modeling & simulation, novel high power device design, simulation, and device characterization

• Design and simulate high voltage Silicon Carbide MOSFETs (planar, trench, SJ MOSFET, IGBT) with a blocking voltage of >1.2K using Synopsys/Silvaco simulator

• Design & simulate practical and effective junction terminations

• Provide guidances on device structure, optimizing cell, power/performance analysis, process risk assessment, and recommendations for experimental split and improvement

• Develop and apply fundamental MOS device physics-based TCAD modelling & electric field management to calculate band structure, carrier transport, blocking voltage,
switching properties, and thermal management for vertical power devices in the presence of interface state density, gate oxide defects, and defects in Silicon Carbide

• Model transport and carrier scattering in devices operating in extreme ambient conditions

• Collaborate with diverse teams, including process integration, characterization, and circuit design engineers, to analyze and troubleshoot device-related issues during
development

• Serve as a resource for colleagues with less experience, and lead small projects with manageable risks and resource requirements

• Work closely with both internal and external customers to understand customer issues and align their demands. And grow this wide-bandgap team to ~5 headcounts in the
next 3 years.

JOB REQUIREMENTS:

• PhD in Electrical Engineering or related field

• >10 years industrial experience for high power device design and modeling

• Deep knowledge of high voltage, high power MOSFETs (including Planar, Trench, S-J MOSFETs, and IGBTs) design and device characterization on 4H-SiC & GaN substrates.

• Solid understanding of wide-bandgap semiconductor materials and the strong physics of MOSFET devices

• Ability to teach and transfer knowledge to junior staff members

• Ability to effectively communicate and plan with customers regarding their needs, issues, and demands

Roles and Responsibilities:

• TCAD modeling, simulation, and innovative design of high power electronics devices, as well as device characterization.
• Develop and simulate high power SiC MOSFETs (planar, trench, Super-Junction MOSFET, IGBT) with a blocking voltage exceeding 1.2K using the industry-standard Synopsys/Silvaco simulator.
• Create and simulate practical & efficient junction terminations.
• Model transport and carrier scattering in devices operating under extreme ambient conditions.
• Serve as a valuable resource for colleagues with lesser TCAD power electronics experience and take lead in group projects with managing risks & resource requirements.
• Foster close collaborations with both internal and external customers to fully understand customer issues and requirements.

Job Requirements:

• PhD Degree in Electrical Engineering or related field.
• >2-3 years industrial experience for high power devices design and modeling.
• Thorough understanding of different types of high-voltage, high-power MOSFETs including Planar, Trench, Super-Junction MOSFETs, and IGBTs, with a focus on design and device characterizations.
• Hands-on skill in designing MOSFET/diode layouts.
• Excellent communication skills to effectively engage with customers, address their needs, resolve issues, and meet demands.

Roles and Responsibilities:

• TCAD modeling, simulation, and innovative design of high power electronics devices, as well as device characterization.
• Develop and simulate high power SiC MOSFETs (planar, trench, Super-Junction MOSFET, IGBT) with a blocking voltage exceeding 1.2K using the industry-standard Synopsys/Silvaco simulator.
• Create and simulate practical & efficient junction terminations.
• Model transport and carrier scattering in devices operating under extreme ambient conditions.
• Serve as a valuable resource for colleagues with lesser TCAD power electronics experience and take lead in group projects with managing risks & resource requirements.
• Foster close collaborations with both internal and external customers to fully understand customer issues and requirements.

Job Requirements:

• PhD Degree in Electrical Engineering or related field.
• >2-3 years industrial experience for high power devices design and modeling.
• Thorough understanding of different types of high-voltage, high-power MOSFETs including Planar, Trench, Super-Junction MOSFETs, and IGBTs, with a focus on design and device characterizations.
• Hands-on skill in designing MOSFET/diode layouts.
• Excellent communication skills to effectively engage with customers, address their needs, resolve issues, and meet demands.

ROLE:
IME is leading the effort to establish the industry leading Silicon Carbide R&D program. This program aims to advance 200mm Silicon Carbide technologies in various areas, such as epitaxy, device design, process integration & fabrication, and power module packaging. The main objective is to drive disruptive innovations in power device research, with a specific focus on >1.2KV power MOSFETs. These innovations are intended to enhance automotive technologies, vehicle electrification, safety measures, sustainable energy grids, and industrial automation. Key aspects to demonstrate for this role include high power device design, novel device concepts, doping design, gate oxidation, and wide-bandgap process simulations. To achieve this, we are seeking individual with extensive industry experience in using Synopsys/Silvaco TCAD simulator, relevant device characterization skills, design simulation development abilities, a willingness to mentor junior staffs, and strong interpersonal skills. The candidate will contribute to the wide-bandgap & Silicon Carbide team by utilizing their device knowledge, guiding team on device characterization, implementing state-of-art Silicon Carbide power MOSFETs (Planar, Trench & Super-Junction), and innovative novel power MOSFETs for future applications.

RESPONSIBILITIES:

• TCAD modeling & simulation, novel high power device design, simulation, and device characterization

• Design and simulate high voltage Silicon Carbide MOSFETs (planar, trench, SJ MOSFET, IGBT) with a blocking voltage of >1.2K using Synopsys/Silvaco simulator

• Design & simulate practical and effective junction terminations

• Provide guidances on device structure, optimizing cell, power/performance analysis, process risk assessment, and recommendations for experimental split and improvement

• Develop and apply fundamental MOS device physics-based TCAD modelling & electric field management to calculate band structure, carrier transport, blocking voltage,
switching properties, and thermal management for vertical power devices in the presence of interface state density, gate oxide defects, and defects in Silicon Carbide

• Model transport and carrier scattering in devices operating in extreme ambient conditions

• Collaborate with diverse teams, including process integration, characterization, and circuit design engineers, to analyze and troubleshoot device-related issues during
development

• Serve as a resource for colleagues with less experience, and lead small projects with manageable risks and resource requirements

• Work closely with both internal and external customers to understand customer issues and align their demands. And grow this wide-bandgap team to ~5 headcounts in the
next 3 years.

JOB REQUIREMENTS:

• PhD in Electrical Engineering or related field

• >10 years industrial experience for high power device design and modeling

• Deep knowledge of high voltage, high power MOSFETs (including Planar, Trench, S-J MOSFETs, and IGBTs) design and device characterization on 4H-SiC & GaN substrates.

• Solid understanding of wide-bandgap semiconductor materials and the strong physics of MOSFET devices

• Ability to teach and transfer knowledge to junior staff members

• Ability to effectively communicate and plan with customers regarding their needs, issues, and demands

ROLE:
IME is leading the effort to establish the industry leading Silicon Carbide R&D program. This program aims to advance 200mm Silicon Carbide technologies in various areas, such as epitaxy, device design, process integration & fabrication, and power module packaging. The main objective is to drive disruptive innovations in power device research, with a specific focus on >1.2KV power MOSFETs. These innovations are intended to enhance automotive technologies, vehicle electrification, safety measures, sustainable energy grids, and industrial automation. Key aspects to demonstrate for this role include high power device design, novel device concepts, doping design, gate oxidation, and wide-bandgap process simulations. To achieve this, we are seeking individual with extensive industry experience in using Synopsys/Silvaco TCAD simulator, relevant device characterization skills, design simulation development abilities, a willingness to mentor junior staffs, and strong interpersonal skills. The candidate will contribute to the wide-bandgap & Silicon Carbide team by utilizing their device knowledge, guiding team on device characterization, implementing state-of-art Silicon Carbide power MOSFETs (Planar, Trench & Super-Junction), and innovative novel power MOSFETs for future applications.

RESPONSIBILITIES:

• TCAD modeling & simulation, novel high power device design, simulation, and device characterization

• Design and simulate high voltage Silicon Carbide MOSFETs (planar, trench, SJ MOSFET, IGBT) with a blocking voltage of >1.2K using Synopsys/Silvaco simulator

• Design & simulate practical and effective junction terminations

• Provide guidances on device structure, optimizing cell, power/performance analysis, process risk assessment, and recommendations for experimental split and improvement

• Develop and apply fundamental MOS device physics-based TCAD modelling & electric field management to calculate band structure, carrier transport, blocking voltage,
switching properties, and thermal management for vertical power devices in the presence of interface state density, gate oxide defects, and defects in Silicon Carbide

• Model transport and carrier scattering in devices operating in extreme ambient conditions

• Collaborate with diverse teams, including process integration, characterization, and circuit design engineers, to analyze and troubleshoot device-related issues during
development

• Serve as a resource for colleagues with less experience, and lead small projects with manageable risks and resource requirements

• Work closely with both internal and external customers to understand customer issues and align their demands. And grow this wide-bandgap team to ~5 headcounts in the
next 3 years.

JOB REQUIREMENTS:

• PhD in Electrical Engineering or related field

• >10 years industrial experience for high power device design and modeling

• Deep knowledge of high voltage, high power MOSFETs (including Planar, Trench, S-J MOSFETs, and IGBTs) design and device characterization on 4H-SiC & GaN substrates.

• Solid understanding of wide-bandgap semiconductor materials and the strong physics of MOSFET devices

• Ability to teach and transfer knowledge to junior staff members

• Ability to effectively communicate and plan with customers regarding their needs, issues, and demands

We are looking for a candidate for high-speed analog integrated circuit design. This candidate will contribute to the development of high linearity silicon photonics modulators for 6G and beyond communication systems. This requires the candidate to work closely with the optics team on the electro/optical co-design as well as system integration and validation.

• Perform system level analysis and design, to derive circuit-level design specifications
• Design and tapeout ICs which include state-of-the-art circuit blocks, e.g. wideband linear low-noise amplifier and transimpedance amplifier with a focus on circuits interfacing with silicon photonics elements
• Work together with team to investigate novel circuit/system solutions to create new inventions

Job Requirements

• Qualification & Field of Study: Minimum Bachelor’s degree and above in Electronic Engineering
• Min. Years of Experience: Minimum 2-years of transistor level analog circuit design experience

Other Requirements (e.g. Skills, Competencies)

• Good understanding of CMOS analog IC design methodologies and successful tapeout experience
• Familiar with analog IC design and verification flow
• Industry experience would be a plus
• Familiar with the IC test equipment such as oscilloscope, spectrum analyzer, etc.
• Good communication skills (both written and spoken)
• Able to generate high quality scientific publications and patents
• Team player, quick learner and self-driven

We are looking for a candidate for high-speed analog integrated circuit design. This candidate will contribute to the development of high linearity silicon photonics modulators for 6G and beyond communication systems. This requires the candidate to work closely with the optics team on the electro/optical co-design as well as system integration and validation.

• Perform system level analysis and design, to derive circuit-level design specifications
• Design and tapeout ICs which include state-of-the-art circuit blocks, e.g. wideband linear low-noise amplifier and transimpedance amplifier with a focus on circuits interfacing with silicon photonics elements
• Work together with team to investigate novel circuit/system solutions to create new inventions

Job Requirements

• Qualification & Field of Study: Minimum Bachelor’s degree and above in Electronic Engineering
• Min. Years of Experience: Minimum 2-years of transistor level analog circuit design experience

Other Requirements (e.g. Skills, Competencies)

• Good understanding of CMOS analog IC design methodologies and successful tapeout experience
• Familiar with analog IC design and verification flow
• Industry experience would be a plus
• Familiar with the IC test equipment such as oscilloscope, spectrum analyzer, etc.
• Good communication skills (both written and spoken)
• Able to generate high quality scientific publications and patents
• Team player, quick learner and self-driven

We are looking for a candidate for high-speed analog and mixed-signal integrated circuit design. This candidate will contribute to the development of high-speed silicon photonics transceiver for next generation wireline communication system. This requires the candidate to work closely with the optics team on the electro/optical co-design as well as system integration and validation.

• Perform system level analysis and design, to derive circuit-level design specifications.
• Design and tapeout ICs which include state-of-the-art circuit blocks e.g. analog-to-digital converter, equalizers (CTLE, DFE) as part of the high-speed data link system.
• Work together with team to investigate novel circuit/system solutions to create new inventions

Job Requirements

• Qualification & Field of Study: Minimum Bachelor’s degree and above in Electrical Engineering
• Min. Years of Experience: Minimum 2-years of transistor level analog circuit design experience

Other Requirements (e.g. Skills, Competencies)

• Good understanding of CMOS analog and mixed-signal IC design methodologies and successful tapeout experience
• Familiar with analog and mixed-signal IC design and verification flow
• Industry experience would be a plus
• Familiar with the IC test equipment such as oscilloscope, spectrum analyzer, etc.
• Good communication skills (both written and spoken)
• Able to generate high quality scientific publications and patents
• Team player, quick learner and self-driven

We are looking for a candidate for high-speed analog and mixed-signal integrated circuit design. This candidate will contribute to the development of high-speed silicon photonics transceiver for next generation wireline communication system. This requires the candidate to work closely with the optics team on the electro/optical co-design as well as system integration and validation.

• Perform system level analysis and design, to derive circuit-level design specifications.
• Design and tapeout ICs which include state-of-the-art circuit blocks e.g. analog-to-digital converter, equalizers (CTLE, DFE) as part of the high-speed data link system.
• Work together with team to investigate novel circuit/system solutions to create new inventions

Job Requirements

• Qualification & Field of Study: Minimum Bachelor’s degree and above in Electrical Engineering
• Min. Years of Experience: Minimum 2-years of transistor level analog circuit design experience

Other Requirements (e.g. Skills, Competencies)

• Good understanding of CMOS analog and mixed-signal IC design methodologies and successful tapeout experience
• Familiar with analog and mixed-signal IC design and verification flow
• Industry experience would be a plus
• Familiar with the IC test equipment such as oscilloscope, spectrum analyzer, etc.
• Good communication skills (both written and spoken)
• Able to generate high quality scientific publications and patents
• Team player, quick learner and self-driven

We are looking for a candidate for high-speed analog and mixed-signal integrated circuit design. This candidate will contribute to the development of high-speed silicon photonics transceiver for next generation wireline communication system. This requires the candidate to work closely with the optics team on the electro/optical co-design as well as system integration and validation.

• Perform system level analysis and design, to derive circuit-level design specifications.
• Design and tapeout ICs which include state-of-the-art circuit blocks e.g. analog-to-digital converter, equalizers (CTLE, DFE) as part of the high-speed data link system.
• Work together with team to investigate novel circuit/system solutions to create new inventions

Job Requirements

• Qualification & Field of Study: Minimum Bachelor’s degree and above in Electrical Engineering
• Min. Years of Experience: Minimum 2-years of transistor level analog circuit design experience

Other Requirements (e.g. Skills, Competencies)

• Good understanding of CMOS analog and mixed-signal IC design methodologies and successful tapeout experience
• Familiar with analog and mixed-signal IC design and verification flow
• Industry experience would be a plus
• Familiar with the IC test equipment such as oscilloscope, spectrum analyzer, etc.
• Good communication skills (both written and spoken)
• Able to generate high quality scientific publications and patents
• Team player, quick learner and self-driven

We are looking for a candidate for high-speed analog and mixed-signal integrated circuit design. This candidate will contribute to the development of high-speed silicon photonics transceiver for next generation wireline communication system. This requires the candidate to work closely with the optics team on the electro/optical co-design as well as system integration and validation.

• Perform system level analysis and design, to derive circuit-level design specifications.
• Design and tapeout ICs which include state-of-the-art circuit blocks e.g. analog-to-digital converter, equalizers (CTLE, DFE) as part of the high-speed data link system.
• Work together with team to investigate novel circuit/system solutions to create new inventions

Job Requirements

• Qualification & Field of Study: Minimum Bachelor’s degree and above in Electrical Engineering
• Min. Years of Experience: Minimum 2-years of transistor level analog circuit design experience

Other Requirements (e.g. Skills, Competencies)

• Good understanding of CMOS analog and mixed-signal IC design methodologies and successful tapeout experience
• Familiar with analog and mixed-signal IC design and verification flow
• Industry experience would be a plus
• Familiar with the IC test equipment such as oscilloscope, spectrum analyzer, etc.
• Good communication skills (both written and spoken)
• Able to generate high quality scientific publications and patents
• Team player, quick learner and self-driven

We are looking for a candidate for high-speed analog integrated circuit design. This candidate will contribute to the development of high linearity silicon photonics modulators for 6G and beyond communication systems. This requires the candidate to work closely with the optics team on the electro/optical co-design as well as system integration and validation.

• Perform system level analysis and design, to derive circuit-level design specifications
• Design and tapeout ICs which include state-of-the-art circuit blocks, e.g. wideband linear low-noise amplifier and transimpedance amplifier with a focus on circuits interfacing with silicon photonics elements
• Work together with team to investigate novel circuit/system solutions to create new inventions

Job Requirements

• Qualification & Field of Study: Minimum Bachelor’s degree and above in Electronic Engineering
• Min. Years of Experience: Minimum 2-years of transistor level analog circuit design experience

Other Requirements (e.g. Skills, Competencies)

• Good understanding of CMOS analog IC design methodologies and successful tapeout experience
• Familiar with analog IC design and verification flow
• Industry experience would be a plus
• Familiar with the IC test equipment such as oscilloscope, spectrum analyzer, etc.
• Good communication skills (both written and spoken)
• Able to generate high quality scientific publications and patents
• Team player, quick learner and self-driven

We are looking for a candidate for high-speed analog and mixed-signal integrated circuit design. This candidate will contribute to the development of high-speed silicon photonics transceiver for next generation wireline communication system. This requires the candidate to work closely with the optics team on the electro/optical co-design as well as system integration and validation.

• Perform system level analysis and design, to derive circuit-level design specifications.
• Design and tapeout ICs which include state-of-the-art circuit blocks e.g. analog-to-digital converter, equalizers (CTLE, DFE) as part of the high-speed data link system.
• Work together with team to investigate novel circuit/system solutions to create new inventions

Job Requirements

• Qualification & Field of Study: Minimum Bachelor’s degree and above in Electrical Engineering
• Min. Years of Experience: Minimum 2-years of transistor level analog circuit design experience

Other Requirements (e.g. Skills, Competencies)

• Good understanding of CMOS analog and mixed-signal IC design methodologies and successful tapeout experience
• Familiar with analog and mixed-signal IC design and verification flow
• Industry experience would be a plus
• Familiar with the IC test equipment such as oscilloscope, spectrum analyzer, etc.
• Good communication skills (both written and spoken)
• Able to generate high quality scientific publications and patents
• Team player, quick learner and self-driven

We are looking for a candidate for high-speed analog integrated circuit design. This candidate will contribute to the development of high linearity silicon photonics modulators for 6G and beyond communication systems. This requires the candidate to work closely with the optics team on the electro/optical co-design as well as system integration and validation.

• Perform system level analysis and design, to derive circuit-level design specifications
• Design and tapeout ICs which include state-of-the-art circuit blocks, e.g. wideband linear low-noise amplifier and transimpedance amplifier with a focus on circuits interfacing with silicon photonics elements
• Work together with team to investigate novel circuit/system solutions to create new inventions

Job Requirements

• Qualification & Field of Study: Minimum Bachelor’s degree and above in Electronic Engineering
• Min. Years of Experience: Minimum 2-years of transistor level analog circuit design experience

Other Requirements (e.g. Skills, Competencies)

• Good understanding of CMOS analog IC design methodologies and successful tapeout experience
• Familiar with analog IC design and verification flow
• Industry experience would be a plus
• Familiar with the IC test equipment such as oscilloscope, spectrum analyzer, etc.
• Good communication skills (both written and spoken)
• Able to generate high quality scientific publications and patents
• Team player, quick learner and self-driven