Total 8 design art job vacancies in Singapore

As part of IME Integrated Circuit Design and System Department, we are seeking a candidate with relevant experience in analog integrated circuit design. This candidate will have the opportunity to develop unconventional ultrasound transducer drivers, receiver circuits for IoT and biomedical applications as well as cutting-edge high-speed analog circuits for advanced optical communication.

Role & Responsibilities

• Design and tapeout circuit blocks e.g. high linearity low-noise amplifier, variable gain amplifier, envelop detector, and high voltage driver for MEMS ultrasound transducers.
• Work together with team on system integration and demonstration.
• Work together with team to investigate novel circuit/system solutions to create new inventions.

Requirements

• Master’s / PhD degree in Electrical Engineering or equivalent
• Minimum 2 years of transistor-level analog circuit design experience
• Good understanding of CMOS analog IC design methodologies and successful tapeout experience
• Familiar with analog IC design and verification flow
• Design experience with high voltage BCD process would be a plus
• Familiar with the IC test equipment such as oscilloscope, spectrum analyzer, etc.
• Able to generate high-quality scientific publications and patents
• Team player, quick learner and self-driven

As part of IME Integrated Circuit Design and System Department, we are seeking a candidate with relevant experience in analog integrated circuit design. This candidate will contribute to developing analog circuit blocks e.g. low-power operational amplifiers, voltage/current references, and voltage regulators based on thorough topology analysis. This candidate will work closely with other team members for the circuit design, test verification, as well as system integration and validation for a broad range of innovative sensor systems.

Role & Responsibilities

• Circuit schematic design and simulation, layout supervision, pre-tapeout design verification, test plan development and chip measurement
• Work together with teams to investigate novel circuit/system solutions to create new inventions

Requirements

• Bachelor’s / Master’s degree in Electronic Engineering
• Good understanding of CMOS analog IC design methodologies
• Familiar with analog IC design and verification flow
• Industry experience would be a plus
• Familiar with the IC test equipment such as oscilloscope, spectrum analyzer, etc.
• Able to generate high-quality scientific publications and patents
• Team player, quick learner and self-driven

Roles and Responsibilities:

• TCAD modeling, simulation, and innovative design of high power electronics devices, as well as device characterization.
• Develop and simulate high power SiC MOSFETs (planar, trench, Super-Junction MOSFET, IGBT) with a blocking voltage exceeding 1.2K using the industry-standard Synopsys/Silvaco simulator.
• Create and simulate practical & efficient junction terminations.
• Model transport and carrier scattering in devices operating under extreme ambient conditions.
• Serve as a valuable resource for colleagues with lesser TCAD power electronics experience and take lead in group projects with managing risks & resource requirements.
• Foster close collaborations with both internal and external customers to fully understand customer issues and requirements.

Job Requirements:

• PhD Degree in Electrical Engineering or related field.
• >2-3 years industrial experience for high power devices design and modeling.
• Thorough understanding of different types of high-voltage, high-power MOSFETs including Planar, Trench, Super-Junction MOSFETs, and IGBTs, with a focus on design and device characterizations.
• Hands-on skill in designing MOSFET/diode layouts.
• Excellent communication skills to effectively engage with customers, address their needs, resolve issues, and meet demands.

Roles and Responsibilities:

• TCAD modeling, simulation, and innovative design of high power electronics devices, as well as device characterization.
• Develop and simulate high power SiC MOSFETs (planar, trench, Super-Junction MOSFET, IGBT) with a blocking voltage exceeding 1.2K using the industry-standard Synopsys/Silvaco simulator.
• Create and simulate practical & efficient junction terminations.
• Model transport and carrier scattering in devices operating under extreme ambient conditions.
• Serve as a valuable resource for colleagues with lesser TCAD power electronics experience and take lead in group projects with managing risks & resource requirements.
• Foster close collaborations with both internal and external customers to fully understand customer issues and requirements.

Job Requirements:

• PhD Degree in Electrical Engineering or related field.
• >2-3 years industrial experience for high power devices design and modeling.
• Thorough understanding of different types of high-voltage, high-power MOSFETs including Planar, Trench, Super-Junction MOSFETs, and IGBTs, with a focus on design and device characterizations.
• Hands-on skill in designing MOSFET/diode layouts.
• Excellent communication skills to effectively engage with customers, address their needs, resolve issues, and meet demands.

ROLE:
IME is leading the effort to establish the industry leading Silicon Carbide R&D program. This program aims to advance 200mm Silicon Carbide technologies in various areas, such as epitaxy, device design, process integration & fabrication, and power module packaging. The main objective is to drive disruptive innovations in power device research, with a specific focus on >1.2KV power MOSFETs. These innovations are intended to enhance automotive technologies, vehicle electrification, safety measures, sustainable energy grids, and industrial automation. Key aspects to demonstrate for this role include high power device design, novel device concepts, doping design, gate oxidation, and wide-bandgap process simulations. To achieve this, we are seeking individual with extensive industry experience in using Synopsys/Silvaco TCAD simulator, relevant device characterization skills, design simulation development abilities, a willingness to mentor junior staffs, and strong interpersonal skills. The candidate will contribute to the wide-bandgap & Silicon Carbide team by utilizing their device knowledge, guiding team on device characterization, implementing state-of-art Silicon Carbide power MOSFETs (Planar, Trench & Super-Junction), and innovative novel power MOSFETs for future applications.

RESPONSIBILITIES:

• TCAD modeling & simulation, novel high power device design, simulation, and device characterization

• Design and simulate high voltage Silicon Carbide MOSFETs (planar, trench, SJ MOSFET, IGBT) with a blocking voltage of >1.2K using Synopsys/Silvaco simulator

• Design & simulate practical and effective junction terminations

• Provide guidances on device structure, optimizing cell, power/performance analysis, process risk assessment, and recommendations for experimental split and improvement

• Develop and apply fundamental MOS device physics-based TCAD modelling & electric field management to calculate band structure, carrier transport, blocking voltage,
switching properties, and thermal management for vertical power devices in the presence of interface state density, gate oxide defects, and defects in Silicon Carbide

• Model transport and carrier scattering in devices operating in extreme ambient conditions

• Collaborate with diverse teams, including process integration, characterization, and circuit design engineers, to analyze and troubleshoot device-related issues during
development

• Serve as a resource for colleagues with less experience, and lead small projects with manageable risks and resource requirements

• Work closely with both internal and external customers to understand customer issues and align their demands. And grow this wide-bandgap team to ~5 headcounts in the
next 3 years.

JOB REQUIREMENTS:

• PhD in Electrical Engineering or related field

• >10 years industrial experience for high power device design and modeling

• Deep knowledge of high voltage, high power MOSFETs (including Planar, Trench, S-J MOSFETs, and IGBTs) design and device characterization on 4H-SiC & GaN substrates.

• Solid understanding of wide-bandgap semiconductor materials and the strong physics of MOSFET devices

• Ability to teach and transfer knowledge to junior staff members

• Ability to effectively communicate and plan with customers regarding their needs, issues, and demands

As part of IME Integrated Circuit Design and System Department, we are seeking a candidate with relevant experience in analog integrated circuit design. This candidate will contribute to developing analog circuit blocks e.g. low-power operational amplifiers, voltage/current references, and voltage regulators based on thorough topology analysis. This candidate will work closely with other team members for the circuit design, test verification, as well as system integration and validation for a broad range of innovative sensor systems.

Role & Responsibilities

• Circuit schematic design and simulation, layout supervision, pre-tapeout design verification, test plan development and chip measurement
• Work together with teams to investigate novel circuit/system solutions to create new inventions

Requirements

• Bachelor’s / Master’s degree in Electronic Engineering
• Good understanding of CMOS analog IC design methodologies
• Familiar with analog IC design and verification flow
• Industry experience would be a plus
• Familiar with the IC test equipment such as oscilloscope, spectrum analyzer, etc.
• Able to generate high-quality scientific publications and patents
• Team player, quick learner and self-driven

ROLE:
IME is leading the effort to establish the industry leading Silicon Carbide R&D program. This program aims to advance 200mm Silicon Carbide technologies in various areas, such as epitaxy, device design, process integration & fabrication, and power module packaging. The main objective is to drive disruptive innovations in power device research, with a specific focus on >1.2KV power MOSFETs. These innovations are intended to enhance automotive technologies, vehicle electrification, safety measures, sustainable energy grids, and industrial automation. Key aspects to demonstrate for this role include high power device design, novel device concepts, doping design, gate oxidation, and wide-bandgap process simulations. To achieve this, we are seeking individual with extensive industry experience in using Synopsys/Silvaco TCAD simulator, relevant device characterization skills, design simulation development abilities, a willingness to mentor junior staffs, and strong interpersonal skills. The candidate will contribute to the wide-bandgap & Silicon Carbide team by utilizing their device knowledge, guiding team on device characterization, implementing state-of-art Silicon Carbide power MOSFETs (Planar, Trench & Super-Junction), and innovative novel power MOSFETs for future applications.

RESPONSIBILITIES:

• TCAD modeling & simulation, novel high power device design, simulation, and device characterization

• Design and simulate high voltage Silicon Carbide MOSFETs (planar, trench, SJ MOSFET, IGBT) with a blocking voltage of >1.2K using Synopsys/Silvaco simulator

• Design & simulate practical and effective junction terminations

• Provide guidances on device structure, optimizing cell, power/performance analysis, process risk assessment, and recommendations for experimental split and improvement

• Develop and apply fundamental MOS device physics-based TCAD modelling & electric field management to calculate band structure, carrier transport, blocking voltage,
switching properties, and thermal management for vertical power devices in the presence of interface state density, gate oxide defects, and defects in Silicon Carbide

• Model transport and carrier scattering in devices operating in extreme ambient conditions

• Collaborate with diverse teams, including process integration, characterization, and circuit design engineers, to analyze and troubleshoot device-related issues during
development

• Serve as a resource for colleagues with less experience, and lead small projects with manageable risks and resource requirements

• Work closely with both internal and external customers to understand customer issues and align their demands. And grow this wide-bandgap team to ~5 headcounts in the
next 3 years.

JOB REQUIREMENTS:

• PhD in Electrical Engineering or related field

• >10 years industrial experience for high power device design and modeling

• Deep knowledge of high voltage, high power MOSFETs (including Planar, Trench, S-J MOSFETs, and IGBTs) design and device characterization on 4H-SiC & GaN substrates.

• Solid understanding of wide-bandgap semiconductor materials and the strong physics of MOSFET devices

• Ability to teach and transfer knowledge to junior staff members

• Ability to effectively communicate and plan with customers regarding their needs, issues, and demands

As part of IME Integrated Circuit Design and System Department, we are looking for a candidate with relevant experience in ultrasound imaging system design. This candidate will define an ultrasound transducer array beamformer IC architecture for imaging applications. The candidate will work closely with MEMS team on system architecture, circuit design, simulation, validation, and integration.

Role & Responsibilities

• Perform system-level beamformer architecture, design, and simulation, to derive circuit-level design specifications.
• Beamforming array optimization using AI algorithms.
• Design and implementation of beamformer algorithm in hardware.
• Work together with team to investigate novel circuit/system solutions to create new inventions.

Requirements

• Master’s / PhD degree in Electrical Engineering or equivalent
• Good understanding of ultrasound imaging systems and beamforming theories.
• Knowledge of AI algorithms and implementation will be a plus
• Familiar with IC test equipment such as oscilloscope, spectrum analyzer, etc.
• Able to generate high-quality scientific publications and patents
• Team player, quick learner and self-driven