Total 51 regional recruitment lead job vacancies in D19 Serangoon Garden, Hougang, Sengkang, Punggol

As an Equipment Engineer, you will own all assigned toolsets. The preferred candidate can troubleshoot difficult and poorly defined problems related to mechanics, electronics, and processes using tool knowledge/experience, SPC, schematics, and other available resources. The candidate will collaborate extensively with the area maintenance team and process engineering. Some collaboration will be with tool vendors, other area engineers/managers, procurement, and production.

Responsibilities:

• Provide technical leadership and management of 200MM and 300MM Semiconductor processing equipment in Support of Main Stream Semiconductor Processes and Advanced Packaging processes. Highly desirable for a candidate to have a background in at least one of the following areas: Photolithography, PVD and CVD Thin Films, Dry Etch, Wet Etch /Wafer Clean, Diffusion, Bond, Electroplate (ECD), CMP, or Metrology (some areas may be combined).
• Work with process engineering to drive root-cause corrective actions for equipment failures, implement permanent solutions, and eliminate chronic and long-term down events.
• Lead continuous improvement teams to drive tool matching, availability, and throughput improvements and reduce risk.
• Management of new tool installation, start-up, and tool upgrades to increase fab capability and capacity, lower costs, and improve yields.
• Work with minimal supervision, balancing competing priorities, to serve the needs of the Maintenance, Production, and Development organizations.
• Participate in cross-functional teams that create efficiencies across all layers of the organization.

Required Qualifications

• Degree / Diploma with 10+ years of relevant Semiconductor Industry Experience in Mechanical, Electrical, or Chemical Engineering, Materials Science, Physics, or another relevant Engineering discipline.
• 6+ years of experience within the respective areas of expertise. Experience should include one or more: Semiconductor Wafer Handling, RF Power, High Vacuum, Toxic Gas Delivery systems, Precision Optics, and Wet Chemistry.
• Demonstrated experience with the application of structured problem-solving methodology.
• Positive interpersonal skills, highly energetic and self-motivated.
• Demonstrated ability to meet requirements and deliver results.
• Ability to manage and execute multiple projects simultaneously and shift priorities to meet business needs.

Preferred Qualifications

• Diploma or Bachelor of Science/Engineering in Mechanical, Electrical or Chemical Engineering or Materials Science, Physics or other relevant Engineering discipline.
• Semiconductor Wafer Handling, RF Power, High Vacuum, Toxic Gas Delivery systems, Precision Optics, Wet Chemistry.
• Positive interpersonal skills, highly energetic and self-motivated.
• Experience with Automated Fault Detection and Classification Systems (FDC).
• Strong background with utilizing SPC.
• High level of understanding of equipment component behaviour.
• Experience Integrating Equipment Maintenance Management Software

Candidate will be required to develop, secure and manage industry partnerships for the NGTC. Candidate should stay updated on RF/mmWave GaN market trends and conduct thorough market research and competitive analysis on companies, competitors and the market for actionable insights. This may involve conducting SWOT analyses to enable NGTC to come up with a strategic plan to optimise business and research collaborations.

Candidate will also be responsible for developing and executing marketing strategies to promote NGTC’s capabilities to interested parties.

Candidate will be required to work alongside various internal and external stakeholders and teams to develop NGTC’s strong value propositions and assist with market intelligence to shape the NGTC’s strategies.

Candidate will be required to carry out account management of companies for NGTC to strengthen customer relationships.

Candidate will be required to coordinate and engage with internal stakeholders such as A*STAR’s Industry and Enterprise Group, Institute of Microelectronics or various other public sector agencies.

Requirements:

• Degree in Science or Engineering
• Minimum 5 years of relevant working experience, preferably with a background in GaN technology and industrial commercialization.
• Able to structure and negotiate collaboration agreements.
• Strong analytical skills.
• Strong communication (written and verbal), marketing and interpersonal skills.
• Results oriented, pro-active, and a team player.
• Adaptable and comfortable working in a fast-paced and fast-changing environment.
• Passion to develop Singapore’s semiconductor ecosystem.

Candidate will be required to develop, secure and manage industry partnerships for the NGTC. Candidate should stay updated on RF/mmWave GaN market trends and conduct thorough market research and competitive analysis on companies, competitors and the market for actionable insights. This may involve conducting SWOT analyses to enable NGTC to come up with a strategic plan to optimise business and research collaborations.

Candidate will also be responsible for developing and executing marketing strategies to promote NGTC’s capabilities to interested parties.

Candidate will be required to work alongside various internal and external stakeholders and teams to develop NGTC’s strong value propositions and assist with market intelligence to shape the NGTC’s strategies.

Candidate will be required to carry out account management of companies for NGTC to strengthen customer relationships.

Candidate will be required to coordinate and engage with internal stakeholders such as A*STAR’s Industry and Enterprise Group, Institute of Microelectronics or various other public sector agencies.

Requirements:

• Degree in Science or Engineering
• Minimum 5 years of relevant working experience, preferably with a background in GaN technology and industrial commercialization.
• Able to structure and negotiate collaboration agreements.
• Strong analytical skills.
• Strong communication (written and verbal), marketing and interpersonal skills.
• Results oriented, pro-active, and a team player.
• Adaptable and comfortable working in a fast-paced and fast-changing environment.
• Passion to develop Singapore’s semiconductor ecosystem.

Responsibilities:

• Engage and manage various stakeholders (internal and external) expectations and communication.
• Collaborate with functional teams to conduct cleanroom/facility planning and layout
• Carry out physical area/ floor marking, coordinate with functional teams in tool purchase, movement (in/out), tool relocation plan, project timeline and capacity update.
• Perform risk analysis of various project options and outcomes
• Maintain and validate capacity/capital/space models to enable accurate assessment of wafer fabrication and operations loading needs
• Support operational efficiency improvement efforts (cycle time, OEE improvement, capacity optimization, space optimization)

Requirements:

• Degree in Engineering (Industrial & Systems Engineering), Mechanical, or relevant field;
• Proficient in AutoCAD 2D/3D and Simulation Tool preferred
• Proficient with Microsoft Words, Excel and PowerPoint proficiency
• Preferably to have industrial engineering experience in a semiconductor/ manufacturing environment
• Ability to work independently and team player to deliver in fast paced and collaborative environment

Job Description:

• Actively working with cross functional stakeholders to plan and develop new lithography process
• Validate mask designs, reticle tape out and post tape out verifications
• Actively participate in internal and external technical discussions to overcome process related challenges and provide relevant solutions
• Perform process characterization, margin study to determine the process capability of new process platform
• Act as subject matter expert and resource for researchers and industry partners to enable process and/or product realization
• Publish process development outcomes and breakthroughs in research community
• Engage with relevant equipment makers/vendors and responsible for selecting and procuring research equipment
• Work with fab team in establishing SPC for newly developed processes

Job Requirements:

• Bachelors/Masters in Materials Science and Engineering, Physics, Electrical Engineering, or closely related fields are welcome to apply
• More than 5 years of relevant working experience in R&D and/or industry environment and broad exposure in handling 6”, 8” and/or 12” substrate covering nano to micron technology nodes, preferably in SiC/GaN/Photonics
• Proficient in Photolithography tools including Immersion/KrF/I-line Scanner/Stepper/Mask Aligner, knowledge in eBeam Lithography tool will be added advantage
• Hands-on experience in metrology including but not limited to CdSEM, Overlay, OCD, DRSEM, Microscope. Capable to create recipe to support various research requirements
• Knowledge in design and simulation (ProLith, OPC,etc), and reticle layouts (OAS,GDS) review and basic tape out process
• Equipped with Photolithography skill set including fundamental lithography theory, Photoresist characteristic and application, new process setup (swing curve, FEM, DoE, Statistic Root Cause Analysis and problem solving methodology, etc), optimization and margin improvement.
• Relevant hardware and application knowledge in Photolithography tools and metrology.
• Possess good interpersonal and oral/written communication skills, with ability to deliver clear and concise messages to both internal and external stakeholders.

ROLE:

A*Star-IME is currently working on establishing a hybrid fabrication platform for 150mm and 200mm Silicon Carbide (SiC) power MOSFETs as a new pillar on Singapore"s Future of Microlectronics in wide-bandgap. The main objective of this SiC RnD program is to advance 200mm SiC technologies in various areas, such as epitaxy, device design, process integration & fabrication, and power module packaging. The ultimate aim is to drive disruptive innovations in power device research, specifically focusing on >1.7KV power MOSFETs. These innovations will have significant applications in enhancing automotive technologies, vehicle electrification, safety measures, sustainable energy grids, data centers, and industrial & aerospace automation. Key aspects for this role to be successful include the development and integration of several process modules, such as gate oxidation, implantation, implant activation, layout design verification, lithography, and ohmic contact formation. We are actively looking for individuals with extensive industry experience in device physics and process integration to join our team. The candidate will contribute to process integration, E-test and module process related data analysis, yield enhancement, and device physics.

RESPONSIBILITIES:

• Lead develop process technology for SiC power MOSFETs and ensure it meets the requirements for prototyping manufacturing

• Collaborate with advanced process module development team to establish a process flow for fabricating specific MOS devices

• Responsible to develop and improve test structures that enable fast and rigorous characterization of process

• Accountable to improve device performance and yield through the design, execution, and analysis of experiments for each specific device and product

• Work with cross-functional teams to minimize defects and address technical and yield concerns

• Drive CIP (Continuous improvement plans) to deliver integrated process modules and specific device per project goals

• Make decisions regarding the delivery of process, active and passive devices to multiple customers

REQUIREMENTS:

• MS/PhD Degree in Electrical Engineering or related field

• >3 years industrial experience for MOSFET process integration and device physics

• Proactive, self-motivated, and results-oriented professional with the ability to make efficient contributions to and lead technical discussions

• Extensive expertise in material and process integration

• Comprehensive understanding of semiconductor materials and the physics of MOSFET devices

• Strong communication skills to effectively communicate information about module integration for device fabrication and with customers

• Excellent analytical skills for interpreting process and device data, coupled with strong presentation abilities

ROLE:
A*STAR-IME is leading the way in establishing industry first 200mm open Silicon Carbide (SiC) R&D program. The program specific focus is on advancing 200mm SiC technologies in key areas such as epitaxy, gate stack, ion implantation, and dry etching, and integrating these modules to fabricate high-performance power devices. Our objective is to drive innovation in power device research, particularly in power MOSFETs rated above 1.2KV. Developing key innovative process is crucial for creating high-performance devices that will contribute to advancements in automotive technologies, vehicle electrification, safety measures, sustainable energy grids, data centers, and industrial & aerospace automation. This role involve growing leadership into ion implantation processes for p-body, channel, guard ring, source contact, and other components. We are currently seeking such individual with ~5 years of experience in ion implantation. The chosen candidate will be responsible for independently supervising ion implantation processes, conducting ion implant simulations, possessing knowledge of crystallography and ion interaction with atoms, having strong understanding of implanters and related thermal processing physics, beam optics, dosimetry systems, and vacuum technology. The ideal candidate should also be willing to collaborate with various departments, the technology development group, and customers. Furthermore, the candidate will contribute to the wide-bandgap team by sharing the ion implantation expertise on compound semiconductor materials and collaborate with other departments working with Si-based technology. The candidate will also be groomed to lead this diffusion process module group of ~6 headcounts into the future.

RESPONSIBILITIES:

• Diagnose malfunctions and using test equipment & software to test faulty tool; applying knowledge of the functional operation of the ion implant equipment

• Support on-site ion implanters in creating, running & characterizing recipes for recipe validation and develop process to achieve the desired dopant profile with excellent
damage recovery.

• Collaborate with vendors to optimize equipment performance and reduce tool downtime

• Analyze data related to implant-related defects formation with quantification and defects minimizations strategy

• Examine work-orders and communicates with equipment operators to resolve equipment problems & determine mechanical and human errors contributed to the issues

• Perform scheduled preventive maintenance tasks with tool operators, especially in checking, cleaning, repairing, detecting and preventing problems

• Responsible for designing experiments for ion implantation at various dose, energy, tilt, and twist levels

REQUIREMENTS:

• Ms/PhD Degree in Electrical Engineering or related field

• >3-5 years industrial experience for high power device design and modeling

• Extensive proficiency in medium to high energy/current ion implantation processes, including a comprehensive knowledge of implant equipment, equipment parts, and
troubleshooting techniques to minimize equipment downtime

• Good understanding of wide bandgap semiconductor materials and their corresponding dopant species

• Expertise in ion channeling, ion bombardment, and their impact on the implant species profile

• In-depth comprehension of defect formation and annihilation processes in the implanted region of semiconductors

• Familiarity with essential device properties resulting from ion implantation

• Adept at mentoring and transferring knowledge to junior staff members

ROLE:

IME A*Star is currently working on establishing a hybrid fabrication platform for 150mm & 200mm Silicon Carbide (SiC) power MOSFETs as part of the new SiC R&D program. The main objective of this program is to advance 200mm SiC technologies in various areas, such as epitaxy, device design, process integration for various types of power MOSFETs and power module packaging. The ultimate aim is to drive disruptive innovations in power device research, with a specific focus on >1.7KV power MOSFETs. These innovations will have significant applications in enhancing automotive technologies, vehicle electrification, safety measures, sustainable energy grids, data centers, and industrial & aerospace automation. Key aspects for this deputy lead for wide-bandgap device integration role include the development and integration of several modules, such as gate oxidation, implantation, implant activation, layout design verification, lithography, ohmic contact formation etc are essential. We are actively looking for individual with extensive industry experience in device physics and process integration to join our team. The candidate will contribute to process integration, device layout design, design verification, E-test and module process related data analysis, yield enhancement, and device physics.

RESPONSIBILITIES:

• To lead development of SiC power technologies, serving as both front and back-end process integration in collaboration with advanced module development team. And aim
to grow this team to ~10 headcounts in the next 3 years.

• Optimize and customize process flows for individual SiC products

• Identify and resolve process integration issues and related problems

• Develop specific or derivative processes to meet customer needs

• Support new designs by conducting module characterization and developing effective design rules

• Define and implement measures to enhance stability, yield, reliability, and reduce development costs & time

• Plan and implement sustainable corrective actions to address process deviations

• Continuously monitor and utilize expertise in process and equipment capabilities to achieve optimal device performance

• Determine the correct and effective way to deliver processes, functional devices, and other items to multiple customers

• Perform project management tasks and conduct data analysis

REQUIREMENTS:

• MS/PhD Degree in Electrical Engineering or related field

• >3 years industrial experience for MOSFET process integration and device Physics

• Highly proactive, self-motivated, and results-oriented professional with the ability to make efficient contributions to and lead technical discussions

• Extensive expertise in material and process integration

• Comprehensive understanding of semiconductor materials and MOSFET device physics

• Proficient in teaching and knowledge transfer to junior staff members

• Strong communication skills to effectively convey information about process module integration for device fabrication and with customers

• Excellent analytical skills for interpreting process and device data; combined with strong presentation abilities.

Job Description:

Candidate will be part of Far-Backend Of Line (Far-BEOL) team of process module engineers, advancing specialty technologies at IME. His or her main roles and responsibilities include:

• Develop and support Chemical Mechanical Planarization (CMP) unit process capabilities for silicon photonics, flat optics, advanced packaging, MEMS, and wide bandgap semiconductor applications.
• Deliver innovations involving process methodologies, materials, or approach, and generate intellectual property related to various aspects of CMP.
• Participate as team member with process integration teams to actively support CMP process development, optimization and troubleshooting for various industry and grant projects.
• File patents/know-hows on new development activities.
• Publish research findings in prestigious journals and conferences.

Job Requirement:

• Masters with specialization in Electronics / Microelectronics / Materials Engineering / Chemical Engineering / Materials Science/ Chemistry / Physics or equivalent.
• Minimum 5 years of experience in CMP technologies, preferably in an industrial setting.
• Prior hands-on experience working on industry-scale 200 mm or 300 mm CMP equipment platforms (e.g., AMAT or Ebara platforms), with in-depth technical knowledge in process development, materials, and inline process control related to CMP.
• Knowledge of silicon photonics, advanced packaging, MEMS, or wide bandgap semiconductor technology platforms would be a plus, but not mandatory.
• Strong experimental design (DOE) and data analysis skills is preferred.
• Good interpersonal and strong demonstrated skills in collaborating with internal and external stakeholders.
• At least 2 years of demonstrated experience in managing projects of moderate complexity is preferred
• Good analytical skills and oral/written communication skills, with ability to deliver clear and concise messages to both internal and external stakeholders.
• Self-driven with strong interest in next-generation applications of CMP technologies and industry trends.

ROLE:

IME A*Star is currently working on establishing a hybrid fabrication platform for 150mm & 200mm Silicon Carbide (SiC) power MOSFETs as part of the new SiC R&D program. The main objective of this program is to advance 200mm SiC technologies in various areas, such as epitaxy, device design, process integration for various types of power MOSFETs and power module packaging. The ultimate aim is to drive disruptive innovations in power device research, with a specific focus on >1.7KV power MOSFETs. These innovations will have significant applications in enhancing automotive technologies, vehicle electrification, safety measures, sustainable energy grids, data centers, and industrial & aerospace automation. Key aspects for this deputy lead for wide-bandgap device integration role include the development and integration of several modules, such as gate oxidation, implantation, implant activation, layout design verification, lithography, ohmic contact formation etc are essential. We are actively looking for individual with extensive industry experience in device physics and process integration to join our team. The candidate will contribute to process integration, device layout design, design verification, E-test and module process related data analysis, yield enhancement, and device physics.

RESPONSIBILITIES:

• To lead development of SiC power technologies, serving as both front and back-end process integration in collaboration with advanced module development team. And aim
to grow this team to ~10 headcounts in the next 3 years.

• Optimize and customize process flows for individual SiC products

• Identify and resolve process integration issues and related problems

• Develop specific or derivative processes to meet customer needs

• Support new designs by conducting module characterization and developing effective design rules

• Define and implement measures to enhance stability, yield, reliability, and reduce development costs & time

• Plan and implement sustainable corrective actions to address process deviations

• Continuously monitor and utilize expertise in process and equipment capabilities to achieve optimal device performance

• Determine the correct and effective way to deliver processes, functional devices, and other items to multiple customers

• Perform project management tasks and conduct data analysis

REQUIREMENTS:

• MS/PhD Degree in Electrical Engineering or related field

• >3 years industrial experience for MOSFET process integration and device Physics

• Highly proactive, self-motivated, and results-oriented professional with the ability to make efficient contributions to and lead technical discussions

• Extensive expertise in material and process integration

• Comprehensive understanding of semiconductor materials and MOSFET device physics

• Proficient in teaching and knowledge transfer to junior staff members

• Strong communication skills to effectively convey information about process module integration for device fabrication and with customers

• Excellent analytical skills for interpreting process and device data; combined with strong presentation abilities.

ROLE:
A*STAR-IME is leading the way in establishing industry first 200mm open Silicon Carbide (SiC) R&D program. The program specific focus is on advancing 200mm SiC technologies in key areas such as epitaxy, gate stack, ion implantation, and dry etching, and integrating these modules to fabricate high-performance power devices. Our objective is to drive innovation in power device research, particularly in power MOSFETs rated above 1.2KV. Developing key innovative process is crucial for creating high-performance devices that will contribute to advancements in automotive technologies, vehicle electrification, safety measures, sustainable energy grids, data centers, and industrial & aerospace automation. This role involve growing leadership into ion implantation processes for p-body, channel, guard ring, source contact, and other components. We are currently seeking such individual with ~5 years of experience in ion implantation. The chosen candidate will be responsible for independently supervising ion implantation processes, conducting ion implant simulations, possessing knowledge of crystallography and ion interaction with atoms, having strong understanding of implanters and related thermal processing physics, beam optics, dosimetry systems, and vacuum technology. The ideal candidate should also be willing to collaborate with various departments, the technology development group, and customers. Furthermore, the candidate will contribute to the wide-bandgap team by sharing the ion implantation expertise on compound semiconductor materials and collaborate with other departments working with Si-based technology. The candidate will also be groomed to lead this diffusion process module group of ~6 headcounts into the future.

RESPONSIBILITIES:

• Diagnose malfunctions and using test equipment & software to test faulty tool; applying knowledge of the functional operation of the ion implant equipment

• Support on-site ion implanters in creating, running & characterizing recipes for recipe validation and develop process to achieve the desired dopant profile with excellent
damage recovery.

• Collaborate with vendors to optimize equipment performance and reduce tool downtime

• Analyze data related to implant-related defects formation with quantification and defects minimizations strategy

• Examine work-orders and communicates with equipment operators to resolve equipment problems & determine mechanical and human errors contributed to the issues

• Perform scheduled preventive maintenance tasks with tool operators, especially in checking, cleaning, repairing, detecting and preventing problems

• Responsible for designing experiments for ion implantation at various dose, energy, tilt, and twist levels

REQUIREMENTS:

• Ms/PhD Degree in Electrical Engineering or related field

• >3-5 years industrial experience for high power device design and modeling

• Extensive proficiency in medium to high energy/current ion implantation processes, including a comprehensive knowledge of implant equipment, equipment parts, and
troubleshooting techniques to minimize equipment downtime

• Good understanding of wide bandgap semiconductor materials and their corresponding dopant species

• Expertise in ion channeling, ion bombardment, and their impact on the implant species profile

• In-depth comprehension of defect formation and annihilation processes in the implanted region of semiconductors

• Familiarity with essential device properties resulting from ion implantation

• Adept at mentoring and transferring knowledge to junior staff members

ROLE:
IME is leading the effort to establish the industry leading Silicon Carbide R&D program. This program aims to advance 200mm Silicon Carbide technologies in various areas, such as epitaxy, device design, process integration & fabrication, and power module packaging. The main objective is to drive disruptive innovations in power device research, with a specific focus on >1.2KV power MOSFETs. These innovations are intended to enhance automotive technologies, vehicle electrification, safety measures, sustainable energy grids, and industrial automation. Key aspects to demonstrate for this role include high power device design, novel device concepts, doping design, gate oxidation, and wide-bandgap process simulations. To achieve this, we are seeking individual with extensive industry experience in using Synopsys/Silvaco TCAD simulator, relevant device characterization skills, design simulation development abilities, a willingness to mentor junior staffs, and strong interpersonal skills. The candidate will contribute to the wide-bandgap & Silicon Carbide team by utilizing their device knowledge, guiding team on device characterization, implementing state-of-art Silicon Carbide power MOSFETs (Planar, Trench & Super-Junction), and innovative novel power MOSFETs for future applications.

RESPONSIBILITIES:

• TCAD modeling & simulation, novel high power device design, simulation, and device characterization

• Design and simulate high voltage Silicon Carbide MOSFETs (planar, trench, SJ MOSFET, IGBT) with a blocking voltage of >1.2K using Synopsys/Silvaco simulator

• Design & simulate practical and effective junction terminations

• Provide guidances on device structure, optimizing cell, power/performance analysis, process risk assessment, and recommendations for experimental split and improvement

• Develop and apply fundamental MOS device physics-based TCAD modelling & electric field management to calculate band structure, carrier transport, blocking voltage,
switching properties, and thermal management for vertical power devices in the presence of interface state density, gate oxide defects, and defects in Silicon Carbide

• Model transport and carrier scattering in devices operating in extreme ambient conditions

• Collaborate with diverse teams, including process integration, characterization, and circuit design engineers, to analyze and troubleshoot device-related issues during
development

• Serve as a resource for colleagues with less experience, and lead small projects with manageable risks and resource requirements

• Work closely with both internal and external customers to understand customer issues and align their demands. And grow this wide-bandgap team to ~5 headcounts in the
next 3 years.

JOB REQUIREMENTS:

• PhD in Electrical Engineering or related field

• >10 years industrial experience for high power device design and modeling

• Deep knowledge of high voltage, high power MOSFETs (including Planar, Trench, S-J MOSFETs, and IGBTs) design and device characterization on 4H-SiC & GaN substrates.

• Solid understanding of wide-bandgap semiconductor materials and the strong physics of MOSFET devices

• Ability to teach and transfer knowledge to junior staff members

• Ability to effectively communicate and plan with customers regarding their needs, issues, and demands

ROLE:
IME is leading the effort to establish the industry leading Silicon Carbide R&D program. This program aims to advance 200mm Silicon Carbide technologies in various areas, such as epitaxy, device design, process integration & fabrication, and power module packaging. The main objective is to drive disruptive innovations in power device research, with a specific focus on >1.2KV power MOSFETs. These innovations are intended to enhance automotive technologies, vehicle electrification, safety measures, sustainable energy grids, and industrial automation. Key aspects to demonstrate for this role include high power device design, novel device concepts, doping design, gate oxidation, and wide-bandgap process simulations. To achieve this, we are seeking individual with extensive industry experience in using Synopsys/Silvaco TCAD simulator, relevant device characterization skills, design simulation development abilities, a willingness to mentor junior staffs, and strong interpersonal skills. The candidate will contribute to the wide-bandgap & Silicon Carbide team by utilizing their device knowledge, guiding team on device characterization, implementing state-of-art Silicon Carbide power MOSFETs (Planar, Trench & Super-Junction), and innovative novel power MOSFETs for future applications.

RESPONSIBILITIES:

• TCAD modeling & simulation, novel high power device design, simulation, and device characterization

• Design and simulate high voltage Silicon Carbide MOSFETs (planar, trench, SJ MOSFET, IGBT) with a blocking voltage of >1.2K using Synopsys/Silvaco simulator

• Design & simulate practical and effective junction terminations

• Provide guidances on device structure, optimizing cell, power/performance analysis, process risk assessment, and recommendations for experimental split and improvement

• Develop and apply fundamental MOS device physics-based TCAD modelling & electric field management to calculate band structure, carrier transport, blocking voltage,
switching properties, and thermal management for vertical power devices in the presence of interface state density, gate oxide defects, and defects in Silicon Carbide

• Model transport and carrier scattering in devices operating in extreme ambient conditions

• Collaborate with diverse teams, including process integration, characterization, and circuit design engineers, to analyze and troubleshoot device-related issues during
development

• Serve as a resource for colleagues with less experience, and lead small projects with manageable risks and resource requirements

• Work closely with both internal and external customers to understand customer issues and align their demands. And grow this wide-bandgap team to ~5 headcounts in the
next 3 years.

JOB REQUIREMENTS:

• PhD in Electrical Engineering or related field

• >10 years industrial experience for high power device design and modeling

• Deep knowledge of high voltage, high power MOSFETs (including Planar, Trench, S-J MOSFETs, and IGBTs) design and device characterization on 4H-SiC & GaN substrates.

• Solid understanding of wide-bandgap semiconductor materials and the strong physics of MOSFET devices

• Ability to teach and transfer knowledge to junior staff members

• Ability to effectively communicate and plan with customers regarding their needs, issues, and demands

The A*STAR Skin Research Labs (A*SRL) and Skin Research Institute of Singapore (SRIS) aim to develop novel and efficient products and therapies to prevent age-related loss of skin function, treat skin conditions, and reduce the clinical burden of skin diseases. To facilitate the identification of new hits or tool compounds, the Asian Skin Biobank at SRIS has acquired different compound libraries (natural compounds, FDA-approved drugs, kinase inhibitors) and is looking for a motivated and skilled Scientist/Senior Scientist to set and lead the library screening platform. This position is ideal for an individual with a strong background in cell biology and biochemistry, experience in high throughput drug screening, and solid expertise in skin biology, skin models and cell-based assays for the validation of potential targets.

Key Responsibilities:

• Conceptualize cell- based assays for drug screening and hit identification.
• Design and optimize biochemical cell- based assays with various readouts.
• Develop reporter lines to quantify expression of gene of interests.
• Plan, execute and analyse high throughput screening of library compounds for inter- and intra-institutional collaborations.
• Design and execute in vitro functional assays for hit/target validation.
• Serve as primary point of liaison and coordination between investigators, researchers, sponsoring organizations, and Tech Biz.
• Present findings at internal and external meetings and conferences.
• Write research reports and actively contribute to the preparation of publications.

Requirements:

• PhD degree in Biology, Chemistry, Pharmacy, or a related field.
• At least 5 years of relevant experience in screening of compound libraries, development of specialised cell lines, and cell-based assays.
• Knowledge in skin cell biology and diseases.
• Strong organisational and problem-solving skills.
• Excellent oral and written communication and presentation skills.
• Able to work independently, and as part of a team, with a positive and enthusiastic attitude.

The above eligibility criteria are not exhaustive. A*STAR may include additional selection criteria based on its prevailing recruitment policies. These policies may be amended from time to time without notice. We regret that only shortlisted candidates will be notified.

We are looking for a self-motivated candidate with expertise in high performance digital design and system level architecture modeling to join our Heterogeneous System design team. This candidate will work closely with IME's advanced packing team and contribute to the exploration, optimization and development of multicore & multi-chip system using IME's heterogeneous integration platform.

Job Description:

Digital IC Design and system-level exploration:

• Contribute to the design and development of digital integrated circuits, ensuring they meet performance and functionality requirements.
• Emphasize a system-level perspective in the design process, considering overall system architecture and functionality.
• Incorporate Edge AI principles into digital IC designs, enabling efficient and intelligent processing at the edge of the network.
• RTL implementation for custom circuit design using Verilog/SystemVerilog
• Derive specs and implement necessary customized and highly efficient building blocks such as systolic array, data path controller, scheduler, integer and floating-point processing engine, FFT, etc which are frequency used in various computing architectures.

Simulation, Verification, and Implementation:

• Conduct thorough simulation and verification of digital designs to validate functionality and performance.
• Utilize FPGA in digital IC designs, leveraging its flexibility and reconfigurability for system emulation and architecture exploration
• Perform timing analysis and collaborate with the team to optimize designs for timing closure.
• Contribute to power analysis activities and implement power-efficient design techniques.

Publish research works in prestigious conferences and Journals such as ISSCC, VLSI Symp, A-SSCC, DAC, JSSC and TCAS-I/II.

Prepare detailed design documentation, including specifications, test plans, and reports.

Troubleshoot and debug digital IC designs with a focus on identifying and addressing system-level issues.

Bring creative and innovative solutions to design challenges, staying abreast of industry trends and emerging technologies.

Requirements:

• Master's, or Ph.D. in Electrical Engineering, Computer Engineering, or a related field. The candidate should have prior experiences in IC tape-out of digital/mixed signal SoC and system level modelling and optimization using industry standard tools from leading EDA vendors such as Cadence, Synopsis and Matlab.

As an Equipment Engineer, you will own all assigned toolsets. The preferred candidate can troubleshoot difficult and poorly defined problems related to mechanics, electronics, and processes using tool knowledge/experience, SPC, schematics, and other available resources. The candidate will collaborate extensively with the area maintenance team and process engineering. Some collaboration will be with tool vendors, other area engineers/managers, procurement, and production.

Responsibilities:

• Provide technical leadership and management of 200MM and 300MM Semiconductor processing equipment in Support of Main Stream Semiconductor Processes and Advanced Packaging processes. Highly desirable for a candidate to have a background in at least one of the following areas: Photolithography, PVD and CVD Thin Films, Dry Etch, Wet Etch /Wafer Clean, Diffusion, Bond, Electroplate (ECD), CMP, or Metrology (some areas may be combined).
• Work with process engineering to drive root-cause corrective actions for equipment failures, implement permanent solutions, and eliminate chronic and long-term down events.
• Lead continuous improvement teams to drive tool matching, availability, and throughput improvements and reduce risk.
• Management of new tool installation, start-up, and tool upgrades to increase fab capability and capacity, lower costs, and improve yields.
• Work with minimal supervision, balancing competing priorities, to serve the needs of the Maintenance, Production, and Development organizations.
• Participate in cross-functional teams that create efficiencies across all layers of the organization.

Required Qualifications

• Degree / Diploma with 10+ years of relevant Semiconductor Industry Experience in Mechanical, Electrical, or Chemical Engineering, Materials Science, Physics, or another relevant Engineering discipline.
• 6+ years of experience within the respective areas of expertise. Experience should include one or more: Semiconductor Wafer Handling, RF Power, High Vacuum, Toxic Gas Delivery systems, Precision Optics, and Wet Chemistry.
• Demonstrated experience with the application of structured problem-solving methodology.
• Positive interpersonal skills, highly energetic and self-motivated.
• Demonstrated ability to meet requirements and deliver results.
• Ability to manage and execute multiple projects simultaneously and shift priorities to meet business needs.

Preferred Qualifications

• Diploma or Bachelor of Science/Engineering in Mechanical, Electrical or Chemical Engineering or Materials Science, Physics or other relevant Engineering discipline.
• Semiconductor Wafer Handling, RF Power, High Vacuum, Toxic Gas Delivery systems, Precision Optics, Wet Chemistry.
• Positive interpersonal skills, highly energetic and self-motivated.
• Experience with Automated Fault Detection and Classification Systems (FDC).
• Strong background with utilizing SPC.
• High level of understanding of equipment component behaviour.
• Experience Integrating Equipment Maintenance Management Software

MedTech Catapult is a national initiative for accelerating the development of high-value MedTech projects through an in-house product engineering unit. This productization unit is responsible for supporting the development of technologies through the medical device development cycle to produce full-fledged hardware product systems.

The Lead Engineer will report to the Lead, Product Engineering.

Job Responsibilities

• Responsible for software engineering efforts for integrated medical technology product solutions.
• Responsible for software architecture design and FW requirements specifications generation.
• Design, develop and implement embedded SW for medical instruments and devices and related interface systems using a variety of languages (e.g. C#, ASP.NET etc.), ensuring optimal performance, reliability, and power efficiency.
• Lead software risk management and DFMEA, software verification and validation activities from early concept phase through release to manufacturing according to IEC 62304.
• Responsible for software integration and implementation for embedded systems, ensuring products are according to design requirement.
• Write and execute complete testing plans, protocols, and documentation.
• Identify, debug, and create solutions for issues with code and integration into application architecture.
• Incorporate real-time data acquisition from sensors and closed loop control algorithms and verify real-time closed loop control of systems parameters.
• Support development of intellectual property portfolio in device design and process technology know-how.
• To interact closely with engineers from other disciplines to achieve an optimized design within the stipulated project schedule.
• Write and review documentations for QMS.
• To support other activities for product engineering when required.

Requirements

• Degree in Information Technology, Computer Science, Electronics or a related discipline.
• Minimum 10 years of experience in developing embedded firmware with hardware integration experience related to MedTech applications.
• Complete product lifecycle experience including early concept work, and successful transfer of designs into manufacturing.
• Experience with electrical components such as ADC, DAC, stepper and dc motors, image sensors, Ethernet, I2C, SPI, USB and CAN.
• Good experience with ARM processors or other microprocessor architectures.
• Knowledge of computer architecture and operating systems.
• Familiarity with variety of Operating systems including Windows, MacOS X and Linux; and Mobile platforms, including iOS and Android.
• Familiarity with Network technologies, including TCP/IP, Bluetooth, Zigbee, WiFi and Modbus.
• Familiarity with Languages such as C/C++, C#, Python, MATLAB, and Java.
• Experience managing QMS and proficient with GMP guidelines.
• Good collaboration skills, organised and detailed.
• Demonstrate strong interpersonal skills.

The above eligibility criteria are not exhaustive. A*STAR may include additional selection criteria based on its prevailing recruitment policies. These policies may be amended from time to time without notice. We regret that only shortlisted candidates will be notified.

Candidate will be required to develop, secure and manage industry partnerships for the NGTC. Candidate should stay updated on RF/mmWave GaN market trends and conduct thorough market research and competitive analysis on companies, competitors and the market for actionable insights. This may involve conducting SWOT analyses to enable NGTC to come up with a strategic plan to optimise business and research collaborations.

Candidate will also be responsible for developing and executing marketing strategies to promote NGTC’s capabilities to interested parties.

Candidate will be required to work alongside various internal and external stakeholders and teams to develop NGTC’s strong value propositions and assist with market intelligence to shape the NGTC’s strategies.

Candidate will be required to carry out account management of companies for NGTC to strengthen customer relationships.

Candidate will be required to coordinate and engage with internal stakeholders such as A*STAR’s Industry and Enterprise Group, Institute of Microelectronics or various other public sector agencies.

Requirements:

• Degree in Science or Engineering
• Minimum 5 years of relevant working experience, preferably with a background in GaN technology and industrial commercialization.
• Able to structure and negotiate collaboration agreements.
• Strong analytical skills.
• Strong communication (written and verbal), marketing and interpersonal skills.
• Results oriented, pro-active, and a team player.
• Adaptable and comfortable working in a fast-paced and fast-changing environment.
• Passion to develop Singapore’s semiconductor ecosystem.

Candidate will be required to develop, secure and manage industry partnerships for the NGTC. Candidate should stay updated on RF/mmWave GaN market trends and conduct thorough market research and competitive analysis on companies, competitors and the market for actionable insights. This may involve conducting SWOT analyses to enable NGTC to come up with a strategic plan to optimise business and research collaborations.

Candidate will also be responsible for developing and executing marketing strategies to promote NGTC’s capabilities to interested parties.

Candidate will be required to work alongside various internal and external stakeholders and teams to develop NGTC’s strong value propositions and assist with market intelligence to shape the NGTC’s strategies.

Candidate will be required to carry out account management of companies for NGTC to strengthen customer relationships.

Candidate will be required to coordinate and engage with internal stakeholders such as A*STAR’s Industry and Enterprise Group, Institute of Microelectronics or various other public sector agencies.

Requirements:

• Degree in Science or Engineering
• Minimum 5 years of relevant working experience, preferably with a background in GaN technology and industrial commercialization.
• Able to structure and negotiate collaboration agreements.
• Strong analytical skills.
• Strong communication (written and verbal), marketing and interpersonal skills.
• Results oriented, pro-active, and a team player.
• Adaptable and comfortable working in a fast-paced and fast-changing environment.
• Passion to develop Singapore’s semiconductor ecosystem.

ROLE:
IME is leading the effort to establish the industry leading Silicon Carbide R&D program. This program aims to advance 200mm Silicon Carbide technologies in various areas, such as epitaxy, device design, process integration & fabrication, and power module packaging. The main objective is to drive disruptive innovations in power device research, with a specific focus on >1.2KV power MOSFETs. These innovations are intended to enhance automotive technologies, vehicle electrification, safety measures, sustainable energy grids, and industrial automation. Key aspects to demonstrate for this role include high power device design, novel device concepts, doping design, gate oxidation, and wide-bandgap process simulations. To achieve this, we are seeking individual with extensive industry experience in using Synopsys/Silvaco TCAD simulator, relevant device characterization skills, design simulation development abilities, a willingness to mentor junior staffs, and strong interpersonal skills. The candidate will contribute to the wide-bandgap & Silicon Carbide team by utilizing their device knowledge, guiding team on device characterization, implementing state-of-art Silicon Carbide power MOSFETs (Planar, Trench & Super-Junction), and innovative novel power MOSFETs for future applications.

RESPONSIBILITIES:

• TCAD modeling & simulation, novel high power device design, simulation, and device characterization

• Design and simulate high voltage Silicon Carbide MOSFETs (planar, trench, SJ MOSFET, IGBT) with a blocking voltage of >1.2K using Synopsys/Silvaco simulator

• Design & simulate practical and effective junction terminations

• Provide guidances on device structure, optimizing cell, power/performance analysis, process risk assessment, and recommendations for experimental split and improvement

• Develop and apply fundamental MOS device physics-based TCAD modelling & electric field management to calculate band structure, carrier transport, blocking voltage,
switching properties, and thermal management for vertical power devices in the presence of interface state density, gate oxide defects, and defects in Silicon Carbide

• Model transport and carrier scattering in devices operating in extreme ambient conditions

• Collaborate with diverse teams, including process integration, characterization, and circuit design engineers, to analyze and troubleshoot device-related issues during
development

• Serve as a resource for colleagues with less experience, and lead small projects with manageable risks and resource requirements

• Work closely with both internal and external customers to understand customer issues and align their demands. And grow this wide-bandgap team to ~5 headcounts in the
next 3 years.

JOB REQUIREMENTS:

• PhD in Electrical Engineering or related field

• >10 years industrial experience for high power device design and modeling

• Deep knowledge of high voltage, high power MOSFETs (including Planar, Trench, S-J MOSFETs, and IGBTs) design and device characterization on 4H-SiC & GaN substrates.

• Solid understanding of wide-bandgap semiconductor materials and the strong physics of MOSFET devices

• Ability to teach and transfer knowledge to junior staff members

• Ability to effectively communicate and plan with customers regarding their needs, issues, and demands

ROLE:
A*STAR-IME is leading the way in establishing industry first 200mm open Silicon Carbide (SiC) R&D program. The program specific focus is on advancing 200mm SiC technologies in key areas such as epitaxy, gate stack, ion implantation, and dry etching, and integrating these modules to fabricate high-performance power devices. Our objective is to drive innovation in power device research, particularly in power MOSFETs rated above 1.2KV. Developing key innovative process is crucial for creating high-performance devices that will contribute to advancements in automotive technologies, vehicle electrification, safety measures, sustainable energy grids, data centers, and industrial & aerospace automation. This role involve growing leadership into ion implantation processes for p-body, channel, guard ring, source contact, and other components. We are currently seeking such individual with ~5 years of experience in ion implantation. The chosen candidate will be responsible for independently supervising ion implantation processes, conducting ion implant simulations, possessing knowledge of crystallography and ion interaction with atoms, having strong understanding of implanters and related thermal processing physics, beam optics, dosimetry systems, and vacuum technology. The ideal candidate should also be willing to collaborate with various departments, the technology development group, and customers. Furthermore, the candidate will contribute to the wide-bandgap team by sharing the ion implantation expertise on compound semiconductor materials and collaborate with other departments working with Si-based technology. The candidate will also be groomed to lead this diffusion process module group of ~6 headcounts into the future.

RESPONSIBILITIES:

• Diagnose malfunctions and using test equipment & software to test faulty tool; applying knowledge of the functional operation of the ion implant equipment

• Support on-site ion implanters in creating, running & characterizing recipes for recipe validation and develop process to achieve the desired dopant profile with excellent
damage recovery.

• Collaborate with vendors to optimize equipment performance and reduce tool downtime

• Analyze data related to implant-related defects formation with quantification and defects minimizations strategy

• Examine work-orders and communicates with equipment operators to resolve equipment problems & determine mechanical and human errors contributed to the issues

• Perform scheduled preventive maintenance tasks with tool operators, especially in checking, cleaning, repairing, detecting and preventing problems

• Responsible for designing experiments for ion implantation at various dose, energy, tilt, and twist levels

REQUIREMENTS:

• Ms/PhD Degree in Electrical Engineering or related field

• >3-5 years industrial experience for high power device design and modeling

• Extensive proficiency in medium to high energy/current ion implantation processes, including a comprehensive knowledge of implant equipment, equipment parts, and
troubleshooting techniques to minimize equipment downtime

• Good understanding of wide bandgap semiconductor materials and their corresponding dopant species

• Expertise in ion channeling, ion bombardment, and their impact on the implant species profile

• In-depth comprehension of defect formation and annihilation processes in the implanted region of semiconductors

• Familiarity with essential device properties resulting from ion implantation

• Adept at mentoring and transferring knowledge to junior staff members

ROLE:
IME is leading the effort to establish the industry leading Silicon Carbide R&D program. This program aims to advance 200mm Silicon Carbide technologies in various areas, such as epitaxy, device design, process integration & fabrication, and power module packaging. The main objective is to drive disruptive innovations in power device research, with a specific focus on >1.2KV power MOSFETs. These innovations are intended to enhance automotive technologies, vehicle electrification, safety measures, sustainable energy grids, and industrial automation. Key aspects to demonstrate for this role include high power device design, novel device concepts, doping design, gate oxidation, and wide-bandgap process simulations. To achieve this, we are seeking individual with extensive industry experience in using Synopsys/Silvaco TCAD simulator, relevant device characterization skills, design simulation development abilities, a willingness to mentor junior staffs, and strong interpersonal skills. The candidate will contribute to the wide-bandgap & Silicon Carbide team by utilizing their device knowledge, guiding team on device characterization, implementing state-of-art Silicon Carbide power MOSFETs (Planar, Trench & Super-Junction), and innovative novel power MOSFETs for future applications.

RESPONSIBILITIES:

• TCAD modeling & simulation, novel high power device design, simulation, and device characterization

• Design and simulate high voltage Silicon Carbide MOSFETs (planar, trench, SJ MOSFET, IGBT) with a blocking voltage of >1.2K using Synopsys/Silvaco simulator

• Design & simulate practical and effective junction terminations

• Provide guidances on device structure, optimizing cell, power/performance analysis, process risk assessment, and recommendations for experimental split and improvement

• Develop and apply fundamental MOS device physics-based TCAD modelling & electric field management to calculate band structure, carrier transport, blocking voltage,
switching properties, and thermal management for vertical power devices in the presence of interface state density, gate oxide defects, and defects in Silicon Carbide

• Model transport and carrier scattering in devices operating in extreme ambient conditions

• Collaborate with diverse teams, including process integration, characterization, and circuit design engineers, to analyze and troubleshoot device-related issues during
development

• Serve as a resource for colleagues with less experience, and lead small projects with manageable risks and resource requirements

• Work closely with both internal and external customers to understand customer issues and align their demands. And grow this wide-bandgap team to ~5 headcounts in the
next 3 years.

JOB REQUIREMENTS:

• PhD in Electrical Engineering or related field

• >10 years industrial experience for high power device design and modeling

• Deep knowledge of high voltage, high power MOSFETs (including Planar, Trench, S-J MOSFETs, and IGBTs) design and device characterization on 4H-SiC & GaN substrates.

• Solid understanding of wide-bandgap semiconductor materials and the strong physics of MOSFET devices

• Ability to teach and transfer knowledge to junior staff members

• Ability to effectively communicate and plan with customers regarding their needs, issues, and demands

ROLE:

IME A*Star is currently working on establishing a hybrid fabrication platform for 150mm & 200mm Silicon Carbide (SiC) power MOSFETs as part of the new SiC R&D program. The main objective of this program is to advance 200mm SiC technologies in various areas, such as epitaxy, device design, process integration for various types of power MOSFETs and power module packaging. The ultimate aim is to drive disruptive innovations in power device research, with a specific focus on >1.7KV power MOSFETs. These innovations will have significant applications in enhancing automotive technologies, vehicle electrification, safety measures, sustainable energy grids, data centers, and industrial & aerospace automation. Key aspects for this deputy lead for wide-bandgap device integration role include the development and integration of several modules, such as gate oxidation, implantation, implant activation, layout design verification, lithography, ohmic contact formation etc are essential. We are actively looking for individual with extensive industry experience in device physics and process integration to join our team. The candidate will contribute to process integration, device layout design, design verification, E-test and module process related data analysis, yield enhancement, and device physics.

RESPONSIBILITIES:

• To lead development of SiC power technologies, serving as both front and back-end process integration in collaboration with advanced module development team. And aim
to grow this team to ~10 headcounts in the next 3 years.

• Optimize and customize process flows for individual SiC products

• Identify and resolve process integration issues and related problems

• Develop specific or derivative processes to meet customer needs

• Support new designs by conducting module characterization and developing effective design rules

• Define and implement measures to enhance stability, yield, reliability, and reduce development costs & time

• Plan and implement sustainable corrective actions to address process deviations

• Continuously monitor and utilize expertise in process and equipment capabilities to achieve optimal device performance

• Determine the correct and effective way to deliver processes, functional devices, and other items to multiple customers

• Perform project management tasks and conduct data analysis

REQUIREMENTS:

• MS/PhD Degree in Electrical Engineering or related field

• >3 years industrial experience for MOSFET process integration and device Physics

• Highly proactive, self-motivated, and results-oriented professional with the ability to make efficient contributions to and lead technical discussions

• Extensive expertise in material and process integration

• Comprehensive understanding of semiconductor materials and MOSFET device physics

• Proficient in teaching and knowledge transfer to junior staff members

• Strong communication skills to effectively convey information about process module integration for device fabrication and with customers

• Excellent analytical skills for interpreting process and device data; combined with strong presentation abilities.

ROLE:

A*Star-IME is currently working on establishing a hybrid fabrication platform for 150mm and 200mm Silicon Carbide (SiC) power MOSFETs as a new pillar on Singapore"s Future of Microlectronics in wide-bandgap. The main objective of this SiC RnD program is to advance 200mm SiC technologies in various areas, such as epitaxy, device design, process integration & fabrication, and power module packaging. The ultimate aim is to drive disruptive innovations in power device research, specifically focusing on >1.7KV power MOSFETs. These innovations will have significant applications in enhancing automotive technologies, vehicle electrification, safety measures, sustainable energy grids, data centers, and industrial & aerospace automation. Key aspects for this role to be successful include the development and integration of several process modules, such as gate oxidation, implantation, implant activation, layout design verification, lithography, and ohmic contact formation. We are actively looking for individuals with extensive industry experience in device physics and process integration to join our team. The candidate will contribute to process integration, E-test and module process related data analysis, yield enhancement, and device physics.

RESPONSIBILITIES:

• Lead develop process technology for SiC power MOSFETs and ensure it meets the requirements for prototyping manufacturing

• Collaborate with advanced process module development team to establish a process flow for fabricating specific MOS devices

• Responsible to develop and improve test structures that enable fast and rigorous characterization of process

• Accountable to improve device performance and yield through the design, execution, and analysis of experiments for each specific device and product

• Work with cross-functional teams to minimize defects and address technical and yield concerns

• Drive CIP (Continuous improvement plans) to deliver integrated process modules and specific device per project goals

• Make decisions regarding the delivery of process, active and passive devices to multiple customers

REQUIREMENTS:

• MS/PhD Degree in Electrical Engineering or related field

• >3 years industrial experience for MOSFET process integration and device physics

• Proactive, self-motivated, and results-oriented professional with the ability to make efficient contributions to and lead technical discussions

• Extensive expertise in material and process integration

• Comprehensive understanding of semiconductor materials and the physics of MOSFET devices

• Strong communication skills to effectively communicate information about module integration for device fabrication and with customers

• Excellent analytical skills for interpreting process and device data, coupled with strong presentation abilities

ROLE:

IME A*Star is currently working on establishing a hybrid fabrication platform for 150mm & 200mm Silicon Carbide (SiC) power MOSFETs as part of the new SiC R&D program. The main objective of this program is to advance 200mm SiC technologies in various areas, such as epitaxy, device design, process integration for various types of power MOSFETs and power module packaging. The ultimate aim is to drive disruptive innovations in power device research, with a specific focus on >1.7KV power MOSFETs. These innovations will have significant applications in enhancing automotive technologies, vehicle electrification, safety measures, sustainable energy grids, data centers, and industrial & aerospace automation. Key aspects for this deputy lead for wide-bandgap device integration role include the development and integration of several modules, such as gate oxidation, implantation, implant activation, layout design verification, lithography, ohmic contact formation etc are essential. We are actively looking for individual with extensive industry experience in device physics and process integration to join our team. The candidate will contribute to process integration, device layout design, design verification, E-test and module process related data analysis, yield enhancement, and device physics.

RESPONSIBILITIES:

• To lead development of SiC power technologies, serving as both front and back-end process integration in collaboration with advanced module development team. And aim
to grow this team to ~10 headcounts in the next 3 years.

• Optimize and customize process flows for individual SiC products

• Identify and resolve process integration issues and related problems

• Develop specific or derivative processes to meet customer needs

• Support new designs by conducting module characterization and developing effective design rules

• Define and implement measures to enhance stability, yield, reliability, and reduce development costs & time

• Plan and implement sustainable corrective actions to address process deviations

• Continuously monitor and utilize expertise in process and equipment capabilities to achieve optimal device performance

• Determine the correct and effective way to deliver processes, functional devices, and other items to multiple customers

• Perform project management tasks and conduct data analysis

REQUIREMENTS:

• MS/PhD Degree in Electrical Engineering or related field

• >3 years industrial experience for MOSFET process integration and device Physics

• Highly proactive, self-motivated, and results-oriented professional with the ability to make efficient contributions to and lead technical discussions

• Extensive expertise in material and process integration

• Comprehensive understanding of semiconductor materials and MOSFET device physics

• Proficient in teaching and knowledge transfer to junior staff members

• Strong communication skills to effectively convey information about process module integration for device fabrication and with customers

• Excellent analytical skills for interpreting process and device data; combined with strong presentation abilities.