Total 6,788 Others/Any science rd research job vacancies in Singapore

Job Description

The Engineer will be responsible for driving electro-mechanical product development in compliance with ISO 13485 standards across multiple levels, from component to product. The role includes planning and monitoring New Product Introduction (NPI) programs, managing engineering changes, and maintaining documentation, including Design History Files. The position requires close coordination with both internal and external suppliers, adhering to Quality Management System and regulatory standards.

Key Skills and Experience:

• Bachelor degree in Mechanical Engineering with 3+ years in electro-mechanical systems.
• Technical proficiency in optimizing designs for mechanical and electro-mechanical systems.
• Solid understanding of metal and plastic manufacturing processes for product design.
• Proficiency in 3D CAD software (e.g., SolidWorks), including GD&T and kinematic calculations.

Attributes:

• Analytical and detail-oriented, with a collaborative and hands-on approach.

The above eligibility criteria are not exhaustive. A*STAR may include additional selection criteria based on its prevailing recruitment policies. These policies may be amended from time to time without notice. We regret that only shortlisted candidates will be notified.

Position:

Our team is starting an exciting project to develop RF/mm-wave ICs for the future of communication for Beyond-5G to 6G applications. We are looking for an exceptional candidate with relevant expertise to join us. Our team focuses on developing communication modules for both terrestrial and non-terrestrial needs. You will work at the Institute of Microelectronics (IME) to create the most advanced semiconductor technologies. You will collaborate with world-leading industries and academic institutions on innovative designs and strategic intellectual properties.

Job Responsibility:

• Benchmarking with datasheets, prior arts, and latest academic work.
• In-depth design and analysis with electrical/electromagnetic simulations.
• In-depth analysis of design robustness, optimization, and testability.
• In-depth presentations and report recording of design, layout, test and measurement, and fault analysis.
• Working independently, as a team, and with collaborators from industry and academic backgrounds.

Pre-requisites:

• A Master’s / PhD Degree in Electronics or Electrical Engineering and proven academic and industry experience are pluses.
• Experienced in designing RF/mmWave such as LNA, mixer, PA, buffer, transmission line, baluns, PLL, VCO, etc.
• Experienced in designing base-band/mixed-signal circuits, such as amplifiers, bandgap, ADC, DAC, etc., is a plus.
• Knowledgeable in design trade-offs at the circuit-level specification.
• Experienced in designing in CMOS and SiGe technology or any other technologies like RF-SOI and compound-semiconductor is a plus.
• Proficient in using Cadence and EM tools like ADS for EM circuit simulation, IC layout, LVS, and DRC verification.
• Familiarity with IC measurement and debugging and hands-on experience with RF/mmWave equipment such as spectrum analyzer, network analyzer, oscilloscope, and probe station.
• Good publication record with a strong awareness of state-of-the-art.
• Good communication and teamwork.

ROLE:
IME is leading the effort to establish the industry leading Silicon Carbide R&D program. This program aims to advance 200mm Silicon Carbide technologies in various areas, such as epitaxy, device design, process integration & fabrication, and power module packaging. The main objective is to drive disruptive innovations in power device research, with a specific focus on >1.2KV power MOSFETs. These innovations are intended to enhance automotive technologies, vehicle electrification, safety measures, sustainable energy grids, and industrial automation. Key aspects to demonstrate for this role include high power device design, novel device concepts, doping design, gate oxidation, and wide-bandgap process simulations. To achieve this, we are seeking individual with extensive industry experience in using Synopsys/Silvaco TCAD simulator, relevant device characterization skills, design simulation development abilities, a willingness to mentor junior staffs, and strong interpersonal skills. The candidate will contribute to the wide-bandgap & Silicon Carbide team by utilizing their device knowledge, guiding team on device characterization, implementing state-of-art Silicon Carbide power MOSFETs (Planar, Trench & Super-Junction), and innovative novel power MOSFETs for future applications.

RESPONSIBILITIES:

• TCAD modeling & simulation, novel high power device design, simulation, and device characterization

• Design and simulate high voltage Silicon Carbide MOSFETs (planar, trench, SJ MOSFET, IGBT) with a blocking voltage of >1.2K using Synopsys/Silvaco simulator

• Design & simulate practical and effective junction terminations

• Provide guidances on device structure, optimizing cell, power/performance analysis, process risk assessment, and recommendations for experimental split and improvement

• Develop and apply fundamental MOS device physics-based TCAD modelling & electric field management to calculate band structure, carrier transport, blocking voltage,
switching properties, and thermal management for vertical power devices in the presence of interface state density, gate oxide defects, and defects in Silicon Carbide

• Model transport and carrier scattering in devices operating in extreme ambient conditions

• Collaborate with diverse teams, including process integration, characterization, and circuit design engineers, to analyze and troubleshoot device-related issues during
development

• Serve as a resource for colleagues with less experience, and lead small projects with manageable risks and resource requirements

• Work closely with both internal and external customers to understand customer issues and align their demands. And grow this wide-bandgap team to ~5 headcounts in the
next 3 years.

JOB REQUIREMENTS:

• PhD in Electrical Engineering or related field

• >10 years industrial experience for high power device design and modeling

• Deep knowledge of high voltage, high power MOSFETs (including Planar, Trench, S-J MOSFETs, and IGBTs) design and device characterization on 4H-SiC & GaN substrates.

• Solid understanding of wide-bandgap semiconductor materials and the strong physics of MOSFET devices

• Ability to teach and transfer knowledge to junior staff members

• Ability to effectively communicate and plan with customers regarding their needs, issues, and demands

The National Quantum Federated Foundry (NQFF), hosted at the Institute of Materials Research and Engineering (IMRE), part of the Agency for Science, Technology, and Research (A*STAR), is looking for a research scientist who is experienced in RF electronics simulations and design. The successful candidate will be part of a team of research scientists and engineers working on devices and hardware for quantum technologies, including superconducting qubits, resonator systems, opto-electronic and photonics devices, control systems, and so on. The work in NQFF will support local and international efforts to develop and translate quantum technologies to realize exciting real-world applications.

The roles of the successful candidate will include:

• Design and simulation of electrical and opto-electronic devices for quantum technologies
• Assist the formulation of device fabrication and testing plans
• Operation and maintenance of simulation software and workstations
• Analysis and presentation of scientific results

Job requirements:

• PhD degree in physics, applied physics, electrical engineering, material science & engineering, or any other relevant disciplines.
• At least more than 10 years of relevant experience
• Experience in RF hardware/electronics simulations and design
• Familiarity with superconducting qubit design and cryogenic devices is highly desired
• Expertise in simulation software (COMSOL, HFSS, etc) and scripting/programming
• Ability to independently plan and execute research work
• Ability to communicate well and work closely with team members

The above eligibility criteria are not exhaustive. A*STAR may include additional selection criteria based on its prevailing recruitment policies. These policies may be amended from time to time without notice. We regret that only shortlisted candidates will be notified.

Role & Responsibilities:

• Responsibilities include diagnosing appropriate levels of metal/metal-alloy contaminations by oxygen and other contaminants; determining the root cause of contaminants, and establishing protocols for characterizations.
• Hands-on providing support for onsite metal PVD, including creating, running, and characterizing recipes to achieve the lowest resistances.
• Collaborates closely with equipment vendors and device engineers to optimize the metal-stack for device performances and robustness/reliability, from low to high temperatures.
• Lead data analysis related to implant-induced defects and cleaning issues on metal contacts with solutions development.
• Examines the work-functions of metal/metal-alloys suitable for Ohmic contact on SiC.
• Responsible for designing experiments for Ohmic contact on various SiC substrates with different doping types, determining their impact, and resolving issues to achieve the lowest specific contact resistances.
• Designing cleaning processes to obtain ideal Schottky diode using various metal/metal-alloys on SiC for high-performance applications.
• Work closely with cross-departmental and integration teams and in 3-5 years’ time develop a WBG backend process integration team of at least 4 persons.

Requirements:

• PhD Degree in Material Science, Physics, Electrical Engineering or related field.
• >8 years related industrial experience inclusing backend process module integration.
• Extensive hands-on experience in PVD (Physical Vapor Deposition) processing for metal depositions and interface tuning.
• Strong understanding of metal-semiconductor contact physics.
• Expertise in work-function tunings of metal and metal-alloy.
• Proficiency in modulating electron affinity through implantation or surface treatments of semiconductors.
• Familiarity with wide band-gap semiconductor materials and their interaction with metal/metal-alloys at various temperatures.
• Thorough fundamentals in Ohmic contact and Schottky diode physics, as well as the impact of defects and contaminations on electrical properties.
• Skilled at mentoring and transferring knowledge to junior staff members.
• Excellent communication skills to effectively address customers' needs, concerns, and solution requirements.

Scientist/Senior scientist will be part of heterogeneous integration group focused on development of the quantum packaging technology platforms to integrate qubit and control chip on superconductivity interposer.

He/she will work with cross functional team to:

• Design and simulation of superconducting circuits for salable quantum processor in 3D flip-chip architecture.
• Explore and develop superconducting nanowire base photo detector.
• Design and layout of circuits components of a superconducting qubit.
• Develop design rules and PDK for quantum packaging technologies.
• Provide quantum packaging solutions to meet the system requirements based on the simulation results.
  Prepare competitive grant research proposals and lead execution of these proposals.
  Engage industry partners to align and develop the building blocks required for next generations quantum packaging platforms.

Job Requirements:

• Master/PhD in quantum computing; Electrical and Computer Engineering; Material science area
• 4 to 5 years’ experience in superconducting circuits design and simulation for scalable quantum processor. Deep understanding on 3D quantum package
• Working experience on measuring loss and dielectric constants of materials at cryogenic temperatures
• Strong communication, industry awareness, and problem-solving skills.
• Highly motivated to succeed, a self-starter who is driven and able to work with others effectively to get things done.

ROLE:

IME A*Star is currently working on establishing a hybrid fabrication platform for 150mm & 200mm Silicon Carbide (SiC) power MOSFETs as part of the new SiC R&D program. The main objective of this program is to advance 200mm SiC technologies in various areas, such as epitaxy, device design, process integration for various types of power MOSFETs and power module packaging. The ultimate aim is to drive disruptive innovations in power device research, with a specific focus on >1.7KV power MOSFETs. These innovations will have significant applications in enhancing automotive technologies, vehicle electrification, safety measures, sustainable energy grids, data centers, and industrial & aerospace automation. Key aspects for this deputy lead for wide-bandgap device integration role include the development and integration of several modules, such as gate oxidation, implantation, implant activation, layout design verification, lithography, ohmic contact formation etc are essential. We are actively looking for individual with extensive industry experience in device physics and process integration to join our team. The candidate will contribute to process integration, device layout design, design verification, E-test and module process related data analysis, yield enhancement, and device physics.

RESPONSIBILITIES:

• To lead development of SiC power technologies, serving as both front and back-end process integration in collaboration with advanced module development team. And aim
to grow this team to ~10 headcounts in the next 3 years.

• Optimize and customize process flows for individual SiC products

• Identify and resolve process integration issues and related problems

• Develop specific or derivative processes to meet customer needs

• Support new designs by conducting module characterization and developing effective design rules

• Define and implement measures to enhance stability, yield, reliability, and reduce development costs & time

• Plan and implement sustainable corrective actions to address process deviations

• Continuously monitor and utilize expertise in process and equipment capabilities to achieve optimal device performance

• Determine the correct and effective way to deliver processes, functional devices, and other items to multiple customers

• Perform project management tasks and conduct data analysis

REQUIREMENTS:

• MS/PhD Degree in Electrical Engineering or related field

• >3 years industrial experience for MOSFET process integration and device Physics

• Highly proactive, self-motivated, and results-oriented professional with the ability to make efficient contributions to and lead technical discussions

• Extensive expertise in material and process integration

• Comprehensive understanding of semiconductor materials and MOSFET device physics

• Proficient in teaching and knowledge transfer to junior staff members

• Strong communication skills to effectively convey information about process module integration for device fabrication and with customers

• Excellent analytical skills for interpreting process and device data; combined with strong presentation abilities.

• Working location: Pasir Panjang
• Working Days: 5 days work
• Working hours : 9am - 6pm
• Salary Range: $3500 to $4200

Responsibilities:

New product planning:

• Ideation: generate, develop, curate and prioritise ideas.
• Organise and define requirements based on market data and customer insights.
• Analyse industrial trends and do technology assessment.
• Evaluate scientific information to generate concepts for new product innovations; define product features.
• Define product competitive positioning and unique selling proposition (USP).
• Prepare and execute new product development (NPD) plan, ensuring processes occur within the necessary timeframes to deliver a product to market.
• Align cross-functional Scrum team through Agile methodology.

New product development (NPD):

• Source for contract manufacturers and liaise with engineers/ formulators to develop new product; be the main contact point with these suppliers for NPD/ formulation discussions.
• Review formulas and ingredient/ design statements for new product that is compliant with regulations.
• Conduct or work with contract manufacturer for efficacy assessment, literature review, product trial and testing.
• Work with contract manufacturers for safety assessment and stability study of products.
• Define critical attributes of final products, work with Quality team to finalise product master specifications and list of required lab tests.
• Work with Regulatory Affairs to finalise label text of products and with designer for packaging design.
• Technical resource for Regulatory Affairs, including providing technical document such as formula, raw material COA, efficacy, stability and safety information.
• Research market prices, create accurate product costing data and propose product pricing.
• Present new product for management’s review.

New product introduction:

• Technical resource for Marketing, including providing technical brief or info sheet of product.
• Conduct product training as part of professional education to regional trainer/ marketing team and key leaders of salesforce.

Post-launch product management:

• Reassess industry movement and re-evaluate competitor actions.
• Analyse product performance, profit and loss, and identify actions required.
• Manage incremental improvement for existing products.
• Liaise with contract manufacturers for necessary formula-related matters.
• React to necessary corrective and preventive actions (CAPA) raised by Quality.

• Contribute for and implement standard procedures (in compliance with industrial standards and QMS requirements) for any product development and management activities or as assigned.
• Perform other duties and projects as necessary to meet company goals.

Requirements:

• Degree in Nutrition, Food Science, Pharmaceutical Science or relevant.
• Preferably with some experience in product development/ management in the dietary supplement and health food industry.
• Product/ project management experience; planning & time management experience.
• Travelling is expected.

Interested personnel kindly contact WhatsApp: https://wa.me/6592994753 (Marcus)

Tan Meng Liang Reg No: R23115923

The Supreme HR Advisory Pte Ltd EA No: 14C7279

As part of IME Integrated Circuit Design and System Department, we are seeking a candidate with relevant experience in analog integrated circuit design. This candidate will have the opportunity to develop unconventional ultrasound transducer drivers, receiver circuits for IoT and biomedical applications as well as cutting-edge high-speed analog circuits for advanced optical communication.

Role & Responsibilities

• Design and tapeout circuit blocks e.g. high linearity low-noise amplifier, variable gain amplifier, envelop detector, and high voltage driver for MEMS ultrasound transducers.
• Work together with team on system integration and demonstration.
• Work together with team to investigate novel circuit/system solutions to create new inventions.

Requirements

• Master’s / PhD degree in Electrical Engineering or equivalent
• Minimum 2 years of transistor-level analog circuit design experience
• Good understanding of CMOS analog IC design methodologies and successful tapeout experience
• Familiar with analog IC design and verification flow
• Design experience with high voltage BCD process would be a plus
• Familiar with the IC test equipment such as oscilloscope, spectrum analyzer, etc.
• Able to generate high-quality scientific publications and patents
• Team player, quick learner and self-driven

Job Description:

• Develop epitaxial processes for selective and non-selective growth of Ge and SiGe layers on Si substrates.
• Improve baseline processes for high-quality SiGe and Ge epitaxy: control uniformity and thickness and minimize threading dislocation density.
• Design epitaxial structures and develop processes for Ge and SiGe photodetectors (PD) and electro-absorption modulators (EAM) devices, integrating Ge/SiGe devices into Silicon photonic circuits.
• Troubleshoot to maintain tool and process quality. Prepare Standard Operating Procedures (SOPs), Out-of-Control Plans, and other technical documentation to maintain processes and tools.
• Perform metrology and characterization of SiGe and Ge epilayers (e.g., dopant and thickness uniformity, surface roughness, crystal quality, stress, carrier lifetime, etc.).
• Correlate SiGe and Ge crystal defects (type and density) with device performance and yield, and with device processing conditions.
• Provide technical support for technology transfer and process release requirements.
• Prepare technical presentations and papers for meetings, conferences and journals.

Requirements:

• PhD degree in Materials Science and Engineering, Physics, Chemical Engineering, Chemistry, Microelectronics Engineering, or closely related fields are welcome to apply.
• Prior 3 to 5 years direct experience in SiGe/Ge epitaxy and materials characterization.
• Working knowledge and prior hands-on experience in Design of Experiments (DOE) methodologies, statistical root cause analysis, and problem-solving methods, is desired.
• Understanding of epitaxial system hardware is advantageous.
• Knowledge and prior hands-on experience on basic process characterization techniques such as SEM/TEM, EDX, SIMS, AFM, Ellipsometry is advantageous.
• Possess good interpersonal and oral/written communication skills, with ability to deliver clear and concise messages to both internal and external stakeholders.

Job Description:

• Develop epitaxial processes for selective and non-selective growth of Ge and SiGe layers on Si substrates.
• Improve baseline processes for high-quality SiGe and Ge epitaxy: control uniformity and thickness and minimize threading dislocation density.
• Design epitaxial structures and develop processes for Ge and SiGe photodetectors (PD) and electro-absorption modulators (EAM) devices, integrating Ge/SiGe devices into Silicon photonic circuits.
• Troubleshoot to maintain tool and process quality. Prepare Standard Operating Procedures (SOPs), Out-of-Control Plans, and other technical documentation to maintain processes and tools.
• Perform metrology and characterization of SiGe and Ge epilayers (e.g., dopant and thickness uniformity, surface roughness, crystal quality, stress, carrier lifetime, etc.).
• Correlate SiGe and Ge crystal defects (type and density) with device performance and yield, and with device processing conditions.
• Provide technical support for technology transfer and process release requirements.
• Prepare technical presentations and papers for meetings, conferences and journals.

Requirements:

• PhD degree in Materials Science and Engineering, Physics, Chemical Engineering, Chemistry, Microelectronics Engineering, or closely related fields are welcome to apply.
• Prior 3 to 5 years direct experience in SiGe/Ge epitaxy and materials characterization.
• Working knowledge and prior hands-on experience in Design of Experiments (DOE) methodologies, statistical root cause analysis, and problem-solving methods, is desired.
• Understanding of epitaxial system hardware is advantageous.
• Knowledge and prior hands-on experience on basic process characterization techniques such as SEM/TEM, EDX, SIMS, AFM, Ellipsometry is advantageous.
• Possess good interpersonal and oral/written communication skills, with ability to deliver clear and concise messages to both internal and external stakeholders.

ROLE:

IME A*Star is currently working on establishing a hybrid fabrication platform for 150mm & 200mm Silicon Carbide (SiC) power MOSFETs as part of the new SiC R&D program. The main objective of this program is to advance 200mm SiC technologies in various areas, such as epitaxy, device design, process integration for various types of power MOSFETs and power module packaging. The ultimate aim is to drive disruptive innovations in power device research, with a specific focus on >1.7KV power MOSFETs. These innovations will have significant applications in enhancing automotive technologies, vehicle electrification, safety measures, sustainable energy grids, data centers, and industrial & aerospace automation. Key aspects for this deputy lead for wide-bandgap device integration role include the development and integration of several modules, such as gate oxidation, implantation, implant activation, layout design verification, lithography, ohmic contact formation etc are essential. We are actively looking for individual with extensive industry experience in device physics and process integration to join our team. The candidate will contribute to process integration, device layout design, design verification, E-test and module process related data analysis, yield enhancement, and device physics.

RESPONSIBILITIES:

• To lead development of SiC power technologies, serving as both front and back-end process integration in collaboration with advanced module development team. And aim
to grow this team to ~10 headcounts in the next 3 years.

• Optimize and customize process flows for individual SiC products

• Identify and resolve process integration issues and related problems

• Develop specific or derivative processes to meet customer needs

• Support new designs by conducting module characterization and developing effective design rules

• Define and implement measures to enhance stability, yield, reliability, and reduce development costs & time

• Plan and implement sustainable corrective actions to address process deviations

• Continuously monitor and utilize expertise in process and equipment capabilities to achieve optimal device performance

• Determine the correct and effective way to deliver processes, functional devices, and other items to multiple customers

• Perform project management tasks and conduct data analysis

REQUIREMENTS:

• MS/PhD Degree in Electrical Engineering or related field

• >3 years industrial experience for MOSFET process integration and device Physics

• Highly proactive, self-motivated, and results-oriented professional with the ability to make efficient contributions to and lead technical discussions

• Extensive expertise in material and process integration

• Comprehensive understanding of semiconductor materials and MOSFET device physics

• Proficient in teaching and knowledge transfer to junior staff members

• Strong communication skills to effectively convey information about process module integration for device fabrication and with customers

• Excellent analytical skills for interpreting process and device data; combined with strong presentation abilities.

We are looking for a Research Scientist / Senior Research Scientist to work on a project on developing all-optical neuromorphic computing system. This project is looking to develop on-demand light-matter interaction technology with atomically-thin materials for waveguide optical signal control. The successful candidate will be expected to work under the guidance of the principal investigator and publish in high-quality peer-reviewed scientific journals.

The selected candidate will have access to excellent scientific resources and opportunities for future career development (e.g. presentations at conferences, opportunities for grant applications, advanced training courses, etc.).

Job Requirements:

• PhD degree in Nanophotonics, Applied Physics, Optics, Materials Science or a related field.
• Experience in simulation, design, and characterization of nanophotonic/optical device.
• Experience in the exfoliation, transfer, and characterization of vdw materials.
• Knowledgeable in nanofabrication process for optoelectronic devices.
• Prior experience in optical system design, assembly and alignment will be an advantage.
• Demonstrated ability in developing high-quality, peer-reviewed scientific journal publications

The above eligibility criteria are not exhaustive. A*STAR may include additional selection criteria based on its prevailing recruitment policies. These policies may be amended from time to time without notice. We regret that only shortlisted candidates will be notified.

We are looking for a Research Scientist / Senior Research Scientist to work on a project on developing all-optical neuromorphic computing system. This project is looking to develop on-demand light-matter interaction technology with atomically-thin materials for waveguide optical signal control. The successful candidate will be expected to work under the guidance of the principal investigator and publish in high-quality peer-reviewed scientific journals.

The selected candidate will have access to excellent scientific resources and opportunities for future career development (e.g. presentations at conferences, opportunities for grant applications, advanced training courses, etc.).

Job Requirements:

• PhD degree in Nanophotonics, Applied Physics, Optics, Materials Science or a related field with at least 5 years' of relevant experience.
• Experience in simulation, design, and characterization of nanophotonic/optical device.
• Experience in the exfoliation, transfer, and characterization of vdw materials.
• Knowledgeable in nanofabrication process for optoelectronic devices.
• Prior experience in optical system design, assembly and alignment will be an advantage.
• Demonstrated ability in developing high-quality, peer-reviewed scientific journal publications

The above eligibility criteria are not exhaustive. A*STAR may include additional selection criteria based on its prevailing recruitment policies. These policies may be amended from time to time without notice. We regret that only shortlisted candidates will be notified.

Job Description:

• Be a member of the leadership team to achieve the vision and mission of the National GaN Technology Centre (NGTC).
• Lead the Technology, Engineering and Industry team in technology road mapping and R&D pathfinding in device architecture, fabrication process technology, and MMIC design.
• Lead the Technology team, which comprises (a) characterization & modelling, (b) MMIC design, testing & model validation, (c) device failure and reliability analysis, (d) ultra high frequency GaN-on-SiC device design, layout, fabrication and characterization, and (e) low voltage GaN-on-Silicon device design, layout, fabrication and characterization.
• Coordinate with the Engineering team to develop ultra high frequency devices, ultra low voltage devices, and their MMICs.
• Coordinate with the Engineering and Operations teams to ensure timely delivery of the projects.
• Initiate and secure research grants and industry funding.
• Initiate, coordinate and manage research collaborations with IHLs and industry partners.
• Provide regular progress report of the Technology team’s activities to NGTC management.
• Represent NGTC in customer meetings.

Requirements:

• PhD in Electrical & Electronic Engineering, Materials Science and Engineering, Microelectronics Engineering, or closely related fields are welcome to apply.
• Deep understanding of GaN-HEMT device physics and GaN-based MMICs.
• At least 15-20 years of post-PhD hands-on experience in GaN HEMT and MMIC technology development including design, characterization (e.g. DC, small-signal and load-pull measurement), and modelling; preferably in RF GaN-on-Silicon or GaN-on-SiC technologies.
• At least 8 years of experience in leading a team of research engineers/scientists in managing multiple projects.
• Candidates with industry experience in GaN related R&D would be preferred.
• Working knowledge and hands-on experience in Design of Experiments (DOE) methodologies, statistical root cause analysis, problem-solving methods, and in-line metrology techniques is desired.
• Possess strong leadership, project management, interpersonal and oral/written communication skills.

The above eligibility criteria are not exhaustive. A*STAR may include additional selection criteria based on its prevailing recruitment policies. These policies may be amended from time to time without notice. We regret that only shortlisted candidates will be notified.

Title : English langauge, Maths or Science Tuition Teacher [Pri & Sec Level]
Location: Hougang

Working days & Time: 3 weekdays (3PM-9PM) + Weekend (Both Sat & Sun ; 9AM-6PM)
Salary: $3000 - $3500

Job Responsible:

• Prepare and conduct lessons: Tailor lessons in accordance with our curriculum with a holistic understanding of your student’s learning needs to meet the unique needs and learning styles of individual students.
• Curriculum Development: Work with our curriculum development team to create useful learning materials.
• Motivation: Inspire and motivate students to excel academically and develop a love for learning. Be a role model for your students. Give appropriate advice to students to improve students’ holistic development.
• Communication: Monitor your class progression and provide honest and helpful feedback with suggestions to parents on a regular basis to improve the student’s conduct or academic performance.

Administrative:

• Prepare lesson plans and teaching materials
• Check with students on their exam dates, record students’ test results, evaluate students’ test papers
• Conduct lessons and tutoring sessions.
• Assess and evaluate student performance(Mark papers).Provide feedback to students and parents. (Call parents and update class group chats - teacher’s personal contact would be added)
• Maintain a conducive and disciplined learning environment.
• Stay updated with the latest teaching methods and curriculum changes.
• Assist in curriculum development and improvement.
• Take attendance and arrange makeup lessons for absentees.

Requirement:

• Teaching certification or relevant teaching experience with Singapore MOE syllabus.
• Strong knowledge and passion for the subject(s) you teach.
• Primary post – Min. 'A' level or Diploma
• Secondary post – Min. Bachelor degree