ROLE:
IME is leading the effort to establish the industry leading Silicon Carbide R&D program. This program aims to advance 200mm Silicon Carbide technologies in various areas, such as epitaxy, device design, process integration & fabrication, and power module packaging. The main objective is to drive disruptive innovations in power device research, with a specific focus on >1.2KV power MOSFETs. These innovations are intended to enhance automotive technologies, vehicle electrification, safety measures, sustainable energy grids, and industrial automation. Key aspects to demonstrate for this role include high power device design, novel device concepts, doping design, gate oxidation, and wide-bandgap process simulations. To achieve this, we are seeking individual with extensive industry experience in using Synopsys/Silvaco TCAD simulator, relevant device characterization skills, design simulation development abilities, a willingness to mentor junior staffs, and strong interpersonal skills. The candidate will contribute to the wide-bandgap & Silicon Carbide team by utilizing their device knowledge, guiding team on device characterization, implementing state-of-art Silicon Carbide power MOSFETs (Planar, Trench & Super-Junction), and innovative novel power MOSFETs for future applications.
RESPONSIBILITIES:
• TCAD modeling & simulation, novel high power device design, simulation, and device characterization
• Design and simulate high voltage Silicon Carbide MOSFETs (planar, trench, SJ MOSFET, IGBT) with a blocking voltage of >1.2K using Synopsys/Silvaco simulator
• Design & simulate practical and effective junction terminations
• Provide guidances on device structure, optimizing cell, power/performance analysis, process risk assessment, and recommendations for experimental split and improvement
• Develop and apply fundamental MOS device physics-based TCAD modelling & electric field management to calculate band structure, carrier transport, blocking voltage,
switching properties, and thermal management for vertical power devices in the presence of interface state density, gate oxide defects, and defects in Silicon Carbide
• Model transport and carrier scattering in devices operating in extreme ambient conditions
• Collaborate with diverse teams, including process integration, characterization, and circuit design engineers, to analyze and troubleshoot device-related issues during
development
• Serve as a resource for colleagues with less experience, and lead small projects with manageable risks and resource requirements
• Work closely with both internal and external customers to understand customer issues and align their demands. And grow this wide-bandgap team to ~5 headcounts in the
next 3 years.
JOB REQUIREMENTS:
• PhD in Electrical Engineering or related field
• >10 years industrial experience for high power device design and modeling
• Deep knowledge of high voltage, high power MOSFETs (including Planar, Trench, S-J MOSFETs, and IGBTs) design and device characterization on 4H-SiC & GaN substrates.
• Solid understanding of wide-bandgap semiconductor materials and the strong physics of MOSFET devices
• Ability to teach and transfer knowledge to junior staff members
• Ability to effectively communicate and plan with customers regarding their needs, issues, and demands
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