As part of IME Integrated Circuit Design and System Department, we are looking for a candidate with relevant experience in ultrasound imaging system design. This candidate will define an ultrasound transducer array beamformer IC architecture for imaging applications. The candidate will work closely with MEMS team on system architecture, circuit design, simulation, validation, and integration.

Role & Responsibilities

• Perform system-level beamformer architecture, design, and simulation, to derive circuit-level design specifications.
• Beamforming array optimization using AI algorithms.
• Design and implementation of beamformer algorithm in hardware.
• Work together with team to investigate novel circuit/system solutions to create new inventions.

Requirements

• Master’s / PhD degree in Electrical Engineering or equivalent
• Good understanding of ultrasound imaging systems and beamforming theories.
• Knowledge of AI algorithms and implementation will be a plus
• Familiar with IC test equipment such as oscilloscope, spectrum analyzer, etc.
• Able to generate high-quality scientific publications and patents
• Team player, quick learner and self-driven

Job Description:

• Be a member of the leadership team to achieve the vision and mission of the National GaN Technology Centre (NGTC).
• Lead the Technology, Engineering and Industry team in technology road mapping and R&D pathfinding in device architecture, fabrication process technology, and MMIC design.
• Lead the Technology team, which comprises (a) characterization & modelling, (b) MMIC design, testing & model validation, (c) device failure and reliability analysis, (d) ultra high frequency GaN-on-SiC device design, layout, fabrication and characterization, and (e) low voltage GaN-on-Silicon device design, layout, fabrication and characterization.
• Coordinate with the Engineering team to develop ultra high frequency devices, ultra low voltage devices, and their MMICs.
• Coordinate with the Engineering and Operations teams to ensure timely delivery of the projects.
• Initiate and secure research grants and industry funding.
• Initiate, coordinate and manage research collaborations with IHLs and industry partners.
• Provide regular progress report of the Technology team’s activities to NGTC management.
• Represent NGTC in customer meetings.

Requirements:

• PhD in Electrical & Electronic Engineering, Materials Science and Engineering, Microelectronics Engineering, or closely related fields are welcome to apply.
• Deep understanding of GaN-HEMT device physics and GaN-based MMICs.
• At least 12 years of post-PhD hands-on experience in GaN HEMT and MMIC technology development including design, characterization (e.g. DC, small-signal and load-pull measurement), and modelling; preferably in RF GaN-on-Silicon or GaN-on-SiC technologies.
• At least 12 years of experience in leading a team of research engineers/scientists in managing multiple projects.
• Candidates with industry experience in GaN related R&D would be preferred.
• Working knowledge and hands-on experience in Design of Experiments (DOE) methodologies, statistical root cause analysis, problem-solving methods, and in-line metrology techniques is desired.
• Possess strong leadership, project management, interpersonal and oral/written communication skills.

The above eligibility criteria are not exhaustive. A*STAR may include additional selection criteria based on its prevailing recruitment policies. These policies may be amended from time to time without notice. We regret that only shortlisted candidates will be notified.

Job Summary:

DxD Hub is an end-to-end productisation partner, committed to transforming the MedTech landscape in Singapore through innovative solutions sourced from both local and regional partners. Our strengths are in cross-disciplinary product development particularly in molecular diagnostics, protein immune assays, and digital diagnostic technologies. We are seeking a skilled and experienced Mechanical Design Engineer to join our dynamic team. The successful candidate will take on the responsibility of leading a team in the design and development of mechanical systems. The candidate will work closely with cross-functional teams to lead projects, conducting feasibility studies and overseeing product development. They will also ensure that designs comply with both technical specifications and regulatory standards.

Job Roles and Responsibilities:

• Conceptualise, design, and develop mechanical components and mechanisms for medical devices.
• Responsible for the preparation and maintaining design documentation such as specifications, bill of materials, test protocols, test reports, etc.
• Lead a team to perform structural analysis, thermal analysis, and other relevant tests to validate and optimise designs.
• Responsible for feasibility tests to assess the viability and performance of proposed designs.
• Work closely with cross-functional teams, including teams in molecular diagnostics, protein immune assays, and digital diagnostic technologies as well as electrical engineers, software engineers, and project managers.
• Ensure compliance with DxD Hub Quality Management system, standards, and regulatory requirements such as FDA, ISO13485, etc.

Job Requirements:

• Master’s or bachelor’s degree in mechanical engineering, or related field.
• At least 5 years relevant experience in mechanical design engineering and completed one full product development cycle.
• Three years of experience or equivalent in close and collaborative work with design managers and product managers.
• Experiences in leading a mechanical design team is a plus.
• Proficient in CAD software, such as SolidWorks, AutoCAD, etc.
• Strong understanding of engineering principles, materials, and manufacturing processes.
• Excellent problem-solving and analytical skills.
• Effective communication skills and ability to work collaboratively in a team.
• Knowledge in quality, product verification test, QMS, and ISO13485 would be an advantage.
• Self-driven team player who can work in a fast-paced environment.

The above eligibility criteria are not exhaustive. A*STAR may include additional selection criteria based on its prevailing recruitment policies. These policies may be amended from time to time without notice. We regret that only shortlisted candidates will be notified.

Scientist/Senior scientist will be part of heterogeneous integration group focused on development of the quantum packaging technology platforms to integrate qubit and control chip on superconductivity interposer.

He/she will work with cross functional team to:

• Design and simulation of superconducting circuits for salable quantum processor in 3D flip-chip architecture.
• Explore and develop superconducting nanowire base photo detector.
• Design and layout of circuits components of a superconducting qubit.
• Develop design rules and PDK for quantum packaging technologies.
• Provide quantum packaging solutions to meet the system requirements based on the simulation results.
  Prepare competitive grant research proposals and lead execution of these proposals.
  Engage industry partners to align and develop the building blocks required for next generations quantum packaging platforms.

Job Requirements:

• Master/PhD in quantum computing; Electrical and Computer Engineering; Material science area
• 4 to 5 years’ experience in superconducting circuits design and simulation for scalable quantum processor. Deep understanding on 3D quantum package
• Working experience on measuring loss and dielectric constants of materials at cryogenic temperatures
• Strong communication, industry awareness, and problem-solving skills.
• Highly motivated to succeed, a self-starter who is driven and able to work with others effectively to get things done.

ROLE:
A*STAR-IME is leading the way in establishing industry first 200mm open Silicon Carbide (SiC) R&D program. The program specific focus is on advancing 200mm SiC technologies in key areas such as epitaxy, gate stack, ion implantation, and dry etching, and integrating these modules to fabricate high-performance power devices. Our objective is to drive innovation in power device research, particularly in power MOSFETs rated above 1.2KV. Developing key innovative process is crucial for creating high-performance devices that will contribute to advancements in automotive technologies, vehicle electrification, safety measures, sustainable energy grids, data centers, and industrial & aerospace automation. This role involve growing leadership into ion implantation processes for p-body, channel, guard ring, source contact, and other components. We are currently seeking such individual with ~5 years of experience in ion implantation. The chosen candidate will be responsible for independently supervising ion implantation processes, conducting ion implant simulations, possessing knowledge of crystallography and ion interaction with atoms, having strong understanding of implanters and related thermal processing physics, beam optics, dosimetry systems, and vacuum technology. The ideal candidate should also be willing to collaborate with various departments, the technology development group, and customers. Furthermore, the candidate will contribute to the wide-bandgap team by sharing the ion implantation expertise on compound semiconductor materials and collaborate with other departments working with Si-based technology. The candidate will also be groomed to lead this diffusion process module group of ~6 headcounts into the future.

RESPONSIBILITIES:

• Diagnose malfunctions and using test equipment & software to test faulty tool; applying knowledge of the functional operation of the ion implant equipment

• Support on-site ion implanters in creating, running & characterizing recipes for recipe validation and develop process to achieve the desired dopant profile with excellent
damage recovery.

• Collaborate with vendors to optimize equipment performance and reduce tool downtime

• Analyze data related to implant-related defects formation with quantification and defects minimizations strategy

• Examine work-orders and communicates with equipment operators to resolve equipment problems & determine mechanical and human errors contributed to the issues

• Perform scheduled preventive maintenance tasks with tool operators, especially in checking, cleaning, repairing, detecting and preventing problems

• Responsible for designing experiments for ion implantation at various dose, energy, tilt, and twist levels

REQUIREMENTS:

• Ms/PhD Degree in Electrical Engineering or related field

• >3-5 years industrial experience for high power device design and modeling

• Extensive proficiency in medium to high energy/current ion implantation processes, including a comprehensive knowledge of implant equipment, equipment parts, and
troubleshooting techniques to minimize equipment downtime

• Good understanding of wide bandgap semiconductor materials and their corresponding dopant species

• Expertise in ion channeling, ion bombardment, and their impact on the implant species profile

• In-depth comprehension of defect formation and annihilation processes in the implanted region of semiconductors

• Familiarity with essential device properties resulting from ion implantation

• Adept at mentoring and transferring knowledge to junior staff members

Role & Responsibilities:

• Responsibilities include diagnosing appropriate levels of metal/metal-alloy contaminations by oxygen and other contaminants; determining the root cause of contaminants, and establishing protocols for characterizations.
• Hands-on providing support for onsite metal PVD, including creating, running, and characterizing recipes to achieve the lowest resistances.
• Collaborates closely with equipment vendors and device engineers to optimize the metal-stack for device performances and robustness/reliability, from low to high temperatures.
• Lead data analysis related to implant-induced defects and cleaning issues on metal contacts with solutions development.
• Examines the work-functions of metal/metal-alloys suitable for Ohmic contact on SiC.
• Responsible for designing experiments for Ohmic contact on various SiC substrates with different doping types, determining their impact, and resolving issues to achieve the lowest specific contact resistances.
• Designing cleaning processes to obtain ideal Schottky diode using various metal/metal-alloys on SiC for high-performance applications.
• Work closely with cross-departmental and integration teams and in 3-5 years’ time develop a WBG backend process integration team of at least 4 persons.

Requirements:

• PhD Degree in Material Science, Physics, Electrical Engineering or related field.
• >8 years related industrial experience inclusing backend process module integration.
• Extensive hands-on experience in PVD (Physical Vapor Deposition) processing for metal depositions and interface tuning.
• Strong understanding of metal-semiconductor contact physics.
• Expertise in work-function tunings of metal and metal-alloy.
• Proficiency in modulating electron affinity through implantation or surface treatments of semiconductors.
• Familiarity with wide band-gap semiconductor materials and their interaction with metal/metal-alloys at various temperatures.
• Thorough fundamentals in Ohmic contact and Schottky diode physics, as well as the impact of defects and contaminations on electrical properties.
• Skilled at mentoring and transferring knowledge to junior staff members.
• Excellent communication skills to effectively address customers' needs, concerns, and solution requirements.

Position:

Our team is starting an exciting project to develop RF/mm-wave ICs for the future of communication for Beyond-5G to 6G applications. We are looking for an exceptional candidate with relevant expertise to join us. Our team focuses on developing communication modules for both terrestrial and non-terrestrial needs. You will work at the Institute of Microelectronics (IME) to create the most advanced semiconductor technologies. You will collaborate with world-leading industries and academic institutions on innovative designs and strategic intellectual properties.

Job Responsibility:

• Benchmarking with datasheets, prior arts, and latest academic work.
• In-depth design and analysis with electrical/electromagnetic simulations.
• In-depth analysis of design robustness, optimization, and testability.
• In-depth presentations and report recording of design, layout, test and measurement, and fault analysis.
• Working independently, as a team, and with collaborators from industry and academic backgrounds.

Pre-requisites:

• A Master’s / PhD Degree in Electronics or Electrical Engineering and proven academic and industry experience are pluses.
• Experienced in designing RF/mmWave such as LNA, mixer, PA, buffer, transmission line, baluns, PLL, VCO, etc.
• Experienced in designing base-band/mixed-signal circuits, such as amplifiers, bandgap, ADC, DAC, etc., is a plus.
• Knowledgeable in design trade-offs at the circuit-level specification.
• Experienced in designing in CMOS and SiGe technology or any other technologies like RF-SOI and compound-semiconductor is a plus.
• Proficient in using Cadence and EM tools like ADS for EM circuit simulation, IC layout, LVS, and DRC verification.
• Familiarity with IC measurement and debugging and hands-on experience with RF/mmWave equipment such as spectrum analyzer, network analyzer, oscilloscope, and probe station.
• Good publication record with a strong awareness of state-of-the-art.
• Good communication and teamwork.

ROLE:
IME is leading the effort to establish the industry leading Silicon Carbide R&D program. This program aims to advance 200mm Silicon Carbide technologies in various areas, such as epitaxy, device design, process integration & fabrication, and power module packaging. The main objective is to drive disruptive innovations in power device research, with a specific focus on >1.2KV power MOSFETs. These innovations are intended to enhance automotive technologies, vehicle electrification, safety measures, sustainable energy grids, and industrial automation. Key aspects to demonstrate for this role include high power device design, novel device concepts, doping design, gate oxidation, and wide-bandgap process simulations. To achieve this, we are seeking individual with extensive industry experience in using Synopsys/Silvaco TCAD simulator, relevant device characterization skills, design simulation development abilities, a willingness to mentor junior staffs, and strong interpersonal skills. The candidate will contribute to the wide-bandgap & Silicon Carbide team by utilizing their device knowledge, guiding team on device characterization, implementing state-of-art Silicon Carbide power MOSFETs (Planar, Trench & Super-Junction), and innovative novel power MOSFETs for future applications.

RESPONSIBILITIES:

• TCAD modeling & simulation, novel high power device design, simulation, and device characterization

• Design and simulate high voltage Silicon Carbide MOSFETs (planar, trench, SJ MOSFET, IGBT) with a blocking voltage of >1.2K using Synopsys/Silvaco simulator

• Design & simulate practical and effective junction terminations

• Provide guidances on device structure, optimizing cell, power/performance analysis, process risk assessment, and recommendations for experimental split and improvement

• Develop and apply fundamental MOS device physics-based TCAD modelling & electric field management to calculate band structure, carrier transport, blocking voltage,
switching properties, and thermal management for vertical power devices in the presence of interface state density, gate oxide defects, and defects in Silicon Carbide

• Model transport and carrier scattering in devices operating in extreme ambient conditions

• Collaborate with diverse teams, including process integration, characterization, and circuit design engineers, to analyze and troubleshoot device-related issues during
development

• Serve as a resource for colleagues with less experience, and lead small projects with manageable risks and resource requirements

• Work closely with both internal and external customers to understand customer issues and align their demands. And grow this wide-bandgap team to ~5 headcounts in the
next 3 years.

JOB REQUIREMENTS:

• PhD in Electrical Engineering or related field

• >10 years industrial experience for high power device design and modeling

• Deep knowledge of high voltage, high power MOSFETs (including Planar, Trench, S-J MOSFETs, and IGBTs) design and device characterization on 4H-SiC & GaN substrates.

• Solid understanding of wide-bandgap semiconductor materials and the strong physics of MOSFET devices

• Ability to teach and transfer knowledge to junior staff members

• Ability to effectively communicate and plan with customers regarding their needs, issues, and demands

Job Description

The Engineer will be responsible for driving electro-mechanical product development in compliance with ISO 13485 standards across multiple levels, from component to product. The role includes planning and monitoring New Product Introduction (NPI) programs, managing engineering changes, and maintaining documentation, including Design History Files. The position requires close coordination with both internal and external suppliers, adhering to Quality Management System and regulatory standards.

Key Skills and Experience:

• Bachelor degree in Mechanical Engineering with 3+ years in electro-mechanical systems.
• Technical proficiency in optimizing designs for mechanical and electro-mechanical systems.
• Solid understanding of metal and plastic manufacturing processes for product design.
• Proficiency in 3D CAD software (e.g., SolidWorks), including GD&T and kinematic calculations.

Attributes:

• Analytical and detail-oriented, with a collaborative and hands-on approach.

The above eligibility criteria are not exhaustive. A*STAR may include additional selection criteria based on its prevailing recruitment policies. These policies may be amended from time to time without notice. We regret that only shortlisted candidates will be notified.

Job Description:

DxD Hub is an end-to-end productisation partner, committed to transforming the MedTech landscape in Singapore through innovative solutions sourced from both local and regional partners. Our strengths are in cross-disciplinary product development particularly in molecular diagnostics, protein immune assays, and digital diagnostic technologies.

We are seeking a Senior Engineer with system integration expertise with design oversight to join our team. As a vital member of our team, you will be involved in the design, development, and testing of medical devices, ensuring compliance with regulatory standards and industry best practices.

Your role will involve collaborating with cross-functional teams to create innovative solutions encompassing hardware, software and chemistry by conducting verification and validation activities, and providing technical support throughout the product lifecycle.

The ideal candidate will have a solid understanding of system integration principles, best practices in verification and validation testing, and knowledge of medical device regulations (such as ISO 13485).

Join our dynamic team and contribute to the development of cutting-edge medical devices that improve patient care and well-being.

Job Roles and Responsibilities:

• Develop high-level system architectures that meet user requirements while considering design feasibility.
• Ensure that all system components are compatible and can be integrated seamlessly.
• Design and implement integration strategies and validate the functions as intended while adhering to design principles.
• Lead collaborative teams for the design, implementation, and validation while is capable to perform hand-on testing independently if required to complete engineering or verification studies.
• Lead creating innovative solutions that align with both technical specification and user needs for medical products.
• Coordinate between design, engineering, assay, project manager, and other disciplines to ensure cohesive product development.
• Author or oversee the writing of protocols and reports.
• Foster collaboration among team members to address challenges from both a technical and design perspective.
• Creating and maintaining technical documentation, including design specifications, test protocols, and reports, ensuring compliance with regulatory requirements such as ISO 13485.

Job Requirements:

• Experience in system integration and innovation.
• Bachelor’s degree in Engineering, Design or equivalent engineering or science background.
• Comfortable with navigating uncertain situations without clear guideline.
• Adaptability to changing work conditions and project requirements.
• 5-10 years’ experience in cross-functional product development roles and completed one full product development cycle.
• Track record in working effectively with diverse teams, including engineering, design, and marketing.
• Strong interpersonal skills to facilitate communication between technical and non-technical stakeholders and ability to summarize and communicate complex problems in simple terms.
• Strong analytical skills to troubleshoot integration issues while considering design implications.
• Able to break down complex system in simple steps and identify interfaces between modules and generate system diagrams, workflows and reports.
• Curious and proactive approach to gather information necessary for decision-making.
• Knowledge of statistical tools for data analysis such as (Python/Matlab/Origin/LabView) will be a strong advantage.
• Experience with design software. Experience with CFD simulation software such as ANSYS is advantageous.

The above eligibility criteria are not exhaustive. A*STAR may include additional selection criteria based on its prevailing recruitment policies. These policies may be amended from time to time without notice. We regret that only shortlisted candidates will be notified.

Position:

Our team is starting an exciting project to develop RF/mm-wave ICs for the future of communication for Beyond-5G to 6G applications. We are looking for an exceptional candidate with relevant expertise to join us. Our team focuses on developing communication modules for both terrestrial and non-terrestrial needs. You will work at the Institute of Microelectronics (IME) to create the most advanced semiconductor technologies. You will collaborate with world-leading industries and academic institutions on innovative designs and strategic intellectual properties.

Job Responsibility:

• Benchmarking with datasheets, prior arts, and latest academic work.
• In-depth design and analysis with electrical/electromagnetic simulations.
• In-depth analysis of design robustness, optimization, and testability.
• In-depth presentations and report recording of design, layout, test and measurement, and fault analysis.
• Working independently, as a team, and with collaborators from industry and academic backgrounds.

Pre-requisites:

• A Master’s / PhD Degree in Electronics or Electrical Engineering and proven academic and industry experience are pluses.
• Experienced in designing RF/mmWave such as LNA, mixer, PA, buffer, transmission line, baluns, PLL, VCO, etc.
• Experienced in designing base-band/mixed-signal circuits, such as amplifiers, bandgap, ADC, DAC, etc., is a plus.
• Knowledgeable in design trade-offs at the circuit-level specification.
• Experienced in designing in CMOS and SiGe technology or any other technologies like RF-SOI and compound-semiconductor is a plus.
• Proficient in using Cadence and EM tools like ADS for EM circuit simulation, IC layout, LVS, and DRC verification.
• Familiarity with IC measurement and debugging and hands-on experience with RF/mmWave equipment such as spectrum analyzer, network analyzer, oscilloscope, and probe station.
• Good publication record with a strong awareness of state-of-the-art.
• Good communication and teamwork.

ROLE:
IME is leading the effort to establish the industry leading Silicon Carbide R&D program. This program aims to advance 200mm Silicon Carbide technologies in various areas, such as epitaxy, device design, process integration & fabrication, and power module packaging. The main objective is to drive disruptive innovations in power device research, with a specific focus on >1.2KV power MOSFETs. These innovations are intended to enhance automotive technologies, vehicle electrification, safety measures, sustainable energy grids, and industrial automation. Key aspects to demonstrate for this role include high power device design, novel device concepts, doping design, gate oxidation, and wide-bandgap process simulations. To achieve this, we are seeking individual with extensive industry experience in using Synopsys/Silvaco TCAD simulator, relevant device characterization skills, design simulation development abilities, a willingness to mentor junior staffs, and strong interpersonal skills. The candidate will contribute to the wide-bandgap & Silicon Carbide team by utilizing their device knowledge, guiding team on device characterization, implementing state-of-art Silicon Carbide power MOSFETs (Planar, Trench & Super-Junction), and innovative novel power MOSFETs for future applications.

RESPONSIBILITIES:

• TCAD modeling & simulation, novel high power device design, simulation, and device characterization

• Design and simulate high voltage Silicon Carbide MOSFETs (planar, trench, SJ MOSFET, IGBT) with a blocking voltage of >1.2K using Synopsys/Silvaco simulator

• Design & simulate practical and effective junction terminations

• Provide guidances on device structure, optimizing cell, power/performance analysis, process risk assessment, and recommendations for experimental split and improvement

• Develop and apply fundamental MOS device physics-based TCAD modelling & electric field management to calculate band structure, carrier transport, blocking voltage,
switching properties, and thermal management for vertical power devices in the presence of interface state density, gate oxide defects, and defects in Silicon Carbide

• Model transport and carrier scattering in devices operating in extreme ambient conditions

• Collaborate with diverse teams, including process integration, characterization, and circuit design engineers, to analyze and troubleshoot device-related issues during
development

• Serve as a resource for colleagues with less experience, and lead small projects with manageable risks and resource requirements

• Work closely with both internal and external customers to understand customer issues and align their demands. And grow this wide-bandgap team to ~5 headcounts in the
next 3 years.

JOB REQUIREMENTS:

• PhD in Electrical Engineering or related field

• >10 years industrial experience for high power device design and modeling

• Deep knowledge of high voltage, high power MOSFETs (including Planar, Trench, S-J MOSFETs, and IGBTs) design and device characterization on 4H-SiC & GaN substrates.

• Solid understanding of wide-bandgap semiconductor materials and the strong physics of MOSFET devices

• Ability to teach and transfer knowledge to junior staff members

• Ability to effectively communicate and plan with customers regarding their needs, issues, and demands

Job Description:

We are looking for talented and highly motivated candidate to work on the research and development of flat optics. The recruited scientist will work in the National Semiconductor Translation and Innovation Centre (NSTIC), managed by A*STAR.

The candidate should have a solid background and hands-on experience in the research of optics. Candidate shall be able to perform independent research and solve challenging problems together with the team to deliver high impact results.

The main work scope of the position is as follow:

· Design and simulation of flat optics, including using machine learning method.

· Micro-nanofabrication of flat optics and their characterization.

· Technology development and translation to industry applications.

Job Requirements:

· PhD in Physics or Optics, Photonics, Electrical Engineering, Materials Science

· Hands-on experiences on flat optics or metaoptics are added advantages.

· Good team player, resilient in tackling challenge, effective communication ability.

The above eligibility criteria are not exhaustive. A*STAR may include additional selection criteria based on its prevailing recruitment policies. These policies may be amended from time to time without notice. We regret that only shortlisted candidates will be notified.

Roles and Responsibilities:

• TCAD modeling, simulation, and innovative design of high power electronics devices, as well as device characterization.
• Develop and simulate high power SiC MOSFETs (planar, trench, Super-Junction MOSFET, IGBT) with a blocking voltage exceeding 1.2K using the industry-standard Synopsys/Silvaco simulator.
• Create and simulate practical & efficient junction terminations.
• Model transport and carrier scattering in devices operating under extreme ambient conditions.
• Serve as a valuable resource for colleagues with lesser TCAD power electronics experience and take lead in group projects with managing risks & resource requirements.
• Foster close collaborations with both internal and external customers to fully understand customer issues and requirements.

Job Requirements:

• PhD Degree in Electrical Engineering or related field.
• >2-3 years industrial experience for high power devices design and modeling.
• Thorough understanding of different types of high-voltage, high-power MOSFETs including Planar, Trench, Super-Junction MOSFETs, and IGBTs, with a focus on design and device characterizations.
• Hands-on skill in designing MOSFET/diode layouts.
• Excellent communication skills to effectively engage with customers, address their needs, resolve issues, and meet demands.

Join the Institute of Microelectronics (IME) to be immersed in cutting-edge semiconductor research. As a research institute within the Agency for Science, Technology and Research (A*STAR), IME bridges the gap between academia and industry. Our mission is to accelerate innovation in advanced packaging, piezoMEMS, SiC, RF/mmwave GaN, and photonics & sensors, and to develop talent and inspire in Singapore.

We are looking for a passionate individual to lead our Technology-Business Development (Tech-Biz) department. You will be responsible for leading the department to define and implement our strategies for technology-business development, account management, sales and marketing, and ecosystem development. If you"re excited about the future of microelectronics and wish to contribute to the development of Singapore’s innovation engine for microelectronics, we want you on our team!

Job Responsibilities

• Technology-business Development: Lead the department to define and develop strategies for technology translation.
• Customer Relationship Management: Lead the department to win and retain industry partners and customers for high-value and sustainable engagements.
• Sales: Collect, maximise leads and close customer collaboration projects.
• Marketing: Develop and execute marketing strategies to promote IME’s research capabilities to the industry. Represent IME at international conferences and exhibitions.
• Collaborate with Technology Development (TD) Teams: Partner with our "Technology Development" teams to craft robust value propositions for the industry and shape IME’s ‘go-to-market’ strategy. Detect, track and provide market trends and needs for the TD teams.
• Ecosystem Development: Liaise, coordinate and engage effectively with key internal stakeholders, including A*STAR’s Industry and Enterprise Group, other economic agencies and public sector agencies, to align efforts and achieve common goals for the Singapore semiconductor ecosystem.

Job Requirements:

• Degree in Science or Engineering.
• At least 10-15 years of relevant work experience.
• Able to structure and negotiate collaboration agreements.
• Strong communication (written and verbal), marketing and interpersonal skills.
• Strong analytical skills.
• Results oriented, pro-active, and a team player.
• Adaptable and comfortable working in a fast-paced and fast-changing environment.
• Passion to develop Singapore’s semiconductor industry.

The National Quantum Federated Foundry (NQFF), hosted at the Institute of Materials Research and Engineering (IMRE), part of the Agency for Science, Technology, and Research (A*STAR), is looking for a research scientist who is experienced in RF electronics simulations and design. The successful candidate will be part of a team of research scientists and engineers working on devices and hardware for quantum technologies, including superconducting qubits, resonator systems, opto-electronic and photonics devices, control systems, and so on. The work in NQFF will support local and international efforts to develop and translate quantum technologies to realize exciting real-world applications.

The roles of the successful candidate will include:

• Design and simulation of electrical and opto-electronic devices for quantum technologies
• Assist the formulation of device fabrication and testing plans
• Operation and maintenance of simulation software and workstations
• Analysis and presentation of scientific results

Job requirements:

• PhD degree in physics, applied physics, electrical engineering, material science & engineering, or any other relevant disciplines.
• At least more than 10 years of relevant experience
• Experience in RF hardware/electronics simulations and design
• Familiarity with superconducting qubit design and cryogenic devices is highly desired
• Expertise in simulation software (COMSOL, HFSS, etc) and scripting/programming
• Ability to independently plan and execute research work
• Ability to communicate well and work closely with team members

The above eligibility criteria are not exhaustive. A*STAR may include additional selection criteria based on its prevailing recruitment policies. These policies may be amended from time to time without notice. We regret that only shortlisted candidates will be notified.

Role & Responsibilities:

• Responsibilities include diagnosing appropriate levels of metal/metal-alloy contaminations by oxygen and other contaminants; determining the root cause of contaminants, and establishing protocols for characterizations.
• Hands-on providing support for onsite metal PVD, including creating, running, and characterizing recipes to achieve the lowest resistances.
• Collaborates closely with equipment vendors and device engineers to optimize the metal-stack for device performances and robustness/reliability, from low to high temperatures.
• Lead data analysis related to implant-induced defects and cleaning issues on metal contacts with solutions development.
• Examines the work-functions of metal/metal-alloys suitable for Ohmic contact on SiC.
• Responsible for designing experiments for Ohmic contact on various SiC substrates with different doping types, determining their impact, and resolving issues to achieve the lowest specific contact resistances.
• Designing cleaning processes to obtain ideal Schottky diode using various metal/metal-alloys on SiC for high-performance applications.
• Work closely with cross-departmental and integration teams and in 3-5 years’ time develop a WBG backend process integration team of at least 4 persons.

Requirements:

• PhD Degree in Material Science, Physics, Electrical Engineering or related field.
• >8 years related industrial experience inclusing backend process module integration.
• Extensive hands-on experience in PVD (Physical Vapor Deposition) processing for metal depositions and interface tuning.
• Strong understanding of metal-semiconductor contact physics.
• Expertise in work-function tunings of metal and metal-alloy.
• Proficiency in modulating electron affinity through implantation or surface treatments of semiconductors.
• Familiarity with wide band-gap semiconductor materials and their interaction with metal/metal-alloys at various temperatures.
• Thorough fundamentals in Ohmic contact and Schottky diode physics, as well as the impact of defects and contaminations on electrical properties.
• Skilled at mentoring and transferring knowledge to junior staff members.
• Excellent communication skills to effectively address customers' needs, concerns, and solution requirements.

Scientist/Senior scientist will be part of heterogeneous integration group focused on development of the quantum packaging technology platforms to integrate qubit and control chip on superconductivity interposer.

He/she will work with cross functional team to:

• Design and simulation of superconducting circuits for salable quantum processor in 3D flip-chip architecture.
• Explore and develop superconducting nanowire base photo detector.
• Design and layout of circuits components of a superconducting qubit.
• Develop design rules and PDK for quantum packaging technologies.
• Provide quantum packaging solutions to meet the system requirements based on the simulation results.
  Prepare competitive grant research proposals and lead execution of these proposals.
  Engage industry partners to align and develop the building blocks required for next generations quantum packaging platforms.

Job Requirements:

• Master/PhD in quantum computing; Electrical and Computer Engineering; Material science area
• 4 to 5 years’ experience in superconducting circuits design and simulation for scalable quantum processor. Deep understanding on 3D quantum package
• Working experience on measuring loss and dielectric constants of materials at cryogenic temperatures
• Strong communication, industry awareness, and problem-solving skills.
• Highly motivated to succeed, a self-starter who is driven and able to work with others effectively to get things done.

ROLE:

IME A*Star is currently working on establishing a hybrid fabrication platform for 150mm & 200mm Silicon Carbide (SiC) power MOSFETs as part of the new SiC R&D program. The main objective of this program is to advance 200mm SiC technologies in various areas, such as epitaxy, device design, process integration for various types of power MOSFETs and power module packaging. The ultimate aim is to drive disruptive innovations in power device research, with a specific focus on >1.7KV power MOSFETs. These innovations will have significant applications in enhancing automotive technologies, vehicle electrification, safety measures, sustainable energy grids, data centers, and industrial & aerospace automation. Key aspects for this deputy lead for wide-bandgap device integration role include the development and integration of several modules, such as gate oxidation, implantation, implant activation, layout design verification, lithography, ohmic contact formation etc are essential. We are actively looking for individual with extensive industry experience in device physics and process integration to join our team. The candidate will contribute to process integration, device layout design, design verification, E-test and module process related data analysis, yield enhancement, and device physics.

RESPONSIBILITIES:

• To lead development of SiC power technologies, serving as both front and back-end process integration in collaboration with advanced module development team. And aim
to grow this team to ~10 headcounts in the next 3 years.

• Optimize and customize process flows for individual SiC products

• Identify and resolve process integration issues and related problems

• Develop specific or derivative processes to meet customer needs

• Support new designs by conducting module characterization and developing effective design rules

• Define and implement measures to enhance stability, yield, reliability, and reduce development costs & time

• Plan and implement sustainable corrective actions to address process deviations

• Continuously monitor and utilize expertise in process and equipment capabilities to achieve optimal device performance

• Determine the correct and effective way to deliver processes, functional devices, and other items to multiple customers

• Perform project management tasks and conduct data analysis

REQUIREMENTS:

• MS/PhD Degree in Electrical Engineering or related field

• >3 years industrial experience for MOSFET process integration and device Physics

• Highly proactive, self-motivated, and results-oriented professional with the ability to make efficient contributions to and lead technical discussions

• Extensive expertise in material and process integration

• Comprehensive understanding of semiconductor materials and MOSFET device physics

• Proficient in teaching and knowledge transfer to junior staff members

• Strong communication skills to effectively convey information about process module integration for device fabrication and with customers

• Excellent analytical skills for interpreting process and device data; combined with strong presentation abilities.

Roles and Responsibilities:

• TCAD modeling, simulation, and innovative design of high power electronics devices, as well as device characterization.
• Develop and simulate high power SiC MOSFETs (planar, trench, Super-Junction MOSFET, IGBT) with a blocking voltage exceeding 1.2K using the industry-standard Synopsys/Silvaco simulator.
• Create and simulate practical & efficient junction terminations.
• Model transport and carrier scattering in devices operating under extreme ambient conditions.
• Serve as a valuable resource for colleagues with lesser TCAD power electronics experience and take lead in group projects with managing risks & resource requirements.
• Foster close collaborations with both internal and external customers to fully understand customer issues and requirements.

Job Requirements:

• PhD Degree in Electrical Engineering or related field.
• >2-3 years industrial experience for high power devices design and modeling.
• Thorough understanding of different types of high-voltage, high-power MOSFETs including Planar, Trench, Super-Junction MOSFETs, and IGBTs, with a focus on design and device characterizations.
• Hands-on skill in designing MOSFET/diode layouts.
• Excellent communication skills to effectively engage with customers, address their needs, resolve issues, and meet demands.

Join the Institute of Microelectronics (IME) to be immersed in cutting-edge semiconductor research. As a research institute within the Agency for Science, Technology and Research (A*STAR), IME bridges the gap between academia and industry. Our mission is to accelerate innovation in advanced packaging, piezoMEMS, SiC, RF/mmwave GaN, and photonics & sensors, and to develop talent and inspire in Singapore.

We are looking for a passionate individual to lead our Technology-Business Development (Tech-Biz) department. You will be responsible for leading the department to define and implement our strategies for technology-business development, account management, sales and marketing, and ecosystem development. If you"re excited about the future of microelectronics and wish to contribute to the development of Singapore’s innovation engine for microelectronics, we want you on our team!

Job Responsibilities

• Technology-business Development: Lead the department to define and develop strategies for technology translation.
• Customer Relationship Management: Lead the department to win and retain industry partners and customers for high-value and sustainable engagements.
• Sales: Collect, maximise leads and close customer collaboration projects.
• Marketing: Develop and execute marketing strategies to promote IME’s research capabilities to the industry. Represent IME at international conferences and exhibitions.
• Collaborate with Technology Development (TD) Teams: Partner with our "Technology Development" teams to craft robust value propositions for the industry and shape IME’s ‘go-to-market’ strategy. Detect, track and provide market trends and needs for the TD teams.
• Ecosystem Development: Liaise, coordinate and engage effectively with key internal stakeholders, including A*STAR’s Industry and Enterprise Group, other economic agencies and public sector agencies, to align efforts and achieve common goals for the Singapore semiconductor ecosystem.

Job Requirements:

• Degree in Science or Engineering.
• At least 10-15 years of relevant work experience.
• Able to structure and negotiate collaboration agreements.
• Strong communication (written and verbal), marketing and interpersonal skills.
• Strong analytical skills.
• Results oriented, pro-active, and a team player.
• Adaptable and comfortable working in a fast-paced and fast-changing environment.
• Passion to develop Singapore’s semiconductor industry.

As part of IME Integrated Circuit Design and System Department, we are seeking a candidate with relevant experience in analog integrated circuit design. This candidate will have the opportunity to develop unconventional ultrasound transducer drivers, receiver circuits for IoT and biomedical applications as well as cutting-edge high-speed analog circuits for advanced optical communication.

Role & Responsibilities

• Design and tapeout circuit blocks e.g. high linearity low-noise amplifier, variable gain amplifier, envelop detector, and high voltage driver for MEMS ultrasound transducers.
• Work together with team on system integration and demonstration.
• Work together with team to investigate novel circuit/system solutions to create new inventions.

Requirements

• Master’s / PhD degree in Electrical Engineering or equivalent
• Minimum 2 years of transistor-level analog circuit design experience
• Good understanding of CMOS analog IC design methodologies and successful tapeout experience
• Familiar with analog IC design and verification flow
• Design experience with high voltage BCD process would be a plus
• Familiar with the IC test equipment such as oscilloscope, spectrum analyzer, etc.
• Able to generate high-quality scientific publications and patents
• Team player, quick learner and self-driven

Job Description:

• Develop epitaxial processes for selective and non-selective growth of Ge and SiGe layers on Si substrates.
• Improve baseline processes for high-quality SiGe and Ge epitaxy: control uniformity and thickness and minimize threading dislocation density.
• Design epitaxial structures and develop processes for Ge and SiGe photodetectors (PD) and electro-absorption modulators (EAM) devices, integrating Ge/SiGe devices into Silicon photonic circuits.
• Troubleshoot to maintain tool and process quality. Prepare Standard Operating Procedures (SOPs), Out-of-Control Plans, and other technical documentation to maintain processes and tools.
• Perform metrology and characterization of SiGe and Ge epilayers (e.g., dopant and thickness uniformity, surface roughness, crystal quality, stress, carrier lifetime, etc.).
• Correlate SiGe and Ge crystal defects (type and density) with device performance and yield, and with device processing conditions.
• Provide technical support for technology transfer and process release requirements.
• Prepare technical presentations and papers for meetings, conferences and journals.

Requirements:

• PhD degree in Materials Science and Engineering, Physics, Chemical Engineering, Chemistry, Microelectronics Engineering, or closely related fields are welcome to apply.
• Prior 3 to 5 years direct experience in SiGe/Ge epitaxy and materials characterization.
• Working knowledge and prior hands-on experience in Design of Experiments (DOE) methodologies, statistical root cause analysis, and problem-solving methods, is desired.
• Understanding of epitaxial system hardware is advantageous.
• Knowledge and prior hands-on experience on basic process characterization techniques such as SEM/TEM, EDX, SIMS, AFM, Ellipsometry is advantageous.
• Possess good interpersonal and oral/written communication skills, with ability to deliver clear and concise messages to both internal and external stakeholders.

Job Description:

• Develop epitaxial processes for selective and non-selective growth of Ge and SiGe layers on Si substrates.
• Improve baseline processes for high-quality SiGe and Ge epitaxy: control uniformity and thickness and minimize threading dislocation density.
• Design epitaxial structures and develop processes for Ge and SiGe photodetectors (PD) and electro-absorption modulators (EAM) devices, integrating Ge/SiGe devices into Silicon photonic circuits.
• Troubleshoot to maintain tool and process quality. Prepare Standard Operating Procedures (SOPs), Out-of-Control Plans, and other technical documentation to maintain processes and tools.
• Perform metrology and characterization of SiGe and Ge epilayers (e.g., dopant and thickness uniformity, surface roughness, crystal quality, stress, carrier lifetime, etc.).
• Correlate SiGe and Ge crystal defects (type and density) with device performance and yield, and with device processing conditions.
• Provide technical support for technology transfer and process release requirements.
• Prepare technical presentations and papers for meetings, conferences and journals.

Requirements:

• PhD degree in Materials Science and Engineering, Physics, Chemical Engineering, Chemistry, Microelectronics Engineering, or closely related fields are welcome to apply.
• Prior 3 to 5 years direct experience in SiGe/Ge epitaxy and materials characterization.
• Working knowledge and prior hands-on experience in Design of Experiments (DOE) methodologies, statistical root cause analysis, and problem-solving methods, is desired.
• Understanding of epitaxial system hardware is advantageous.
• Knowledge and prior hands-on experience on basic process characterization techniques such as SEM/TEM, EDX, SIMS, AFM, Ellipsometry is advantageous.
• Possess good interpersonal and oral/written communication skills, with ability to deliver clear and concise messages to both internal and external stakeholders.

ROLE:

IME A*Star is currently working on establishing a hybrid fabrication platform for 150mm & 200mm Silicon Carbide (SiC) power MOSFETs as part of the new SiC R&D program. The main objective of this program is to advance 200mm SiC technologies in various areas, such as epitaxy, device design, process integration for various types of power MOSFETs and power module packaging. The ultimate aim is to drive disruptive innovations in power device research, with a specific focus on >1.7KV power MOSFETs. These innovations will have significant applications in enhancing automotive technologies, vehicle electrification, safety measures, sustainable energy grids, data centers, and industrial & aerospace automation. Key aspects for this deputy lead for wide-bandgap device integration role include the development and integration of several modules, such as gate oxidation, implantation, implant activation, layout design verification, lithography, ohmic contact formation etc are essential. We are actively looking for individual with extensive industry experience in device physics and process integration to join our team. The candidate will contribute to process integration, device layout design, design verification, E-test and module process related data analysis, yield enhancement, and device physics.

RESPONSIBILITIES:

• To lead development of SiC power technologies, serving as both front and back-end process integration in collaboration with advanced module development team. And aim
to grow this team to ~10 headcounts in the next 3 years.

• Optimize and customize process flows for individual SiC products

• Identify and resolve process integration issues and related problems

• Develop specific or derivative processes to meet customer needs

• Support new designs by conducting module characterization and developing effective design rules

• Define and implement measures to enhance stability, yield, reliability, and reduce development costs & time

• Plan and implement sustainable corrective actions to address process deviations

• Continuously monitor and utilize expertise in process and equipment capabilities to achieve optimal device performance

• Determine the correct and effective way to deliver processes, functional devices, and other items to multiple customers

• Perform project management tasks and conduct data analysis

REQUIREMENTS:

• MS/PhD Degree in Electrical Engineering or related field

• >3 years industrial experience for MOSFET process integration and device Physics

• Highly proactive, self-motivated, and results-oriented professional with the ability to make efficient contributions to and lead technical discussions

• Extensive expertise in material and process integration

• Comprehensive understanding of semiconductor materials and MOSFET device physics

• Proficient in teaching and knowledge transfer to junior staff members

• Strong communication skills to effectively convey information about process module integration for device fabrication and with customers

• Excellent analytical skills for interpreting process and device data; combined with strong presentation abilities.