We are looking for a self-motivated candidate with expertise in high performance digital design and system level architecture modeling to join our Heterogeneous System design team. This candidate will work closely with IME's advanced packing team and contribute to the exploration, optimization and development of multicore & multi-chip system using IME's heterogeneous integration platform.

Job Description:

Digital IC Design and system-level exploration:

• Contribute to the design and development of digital integrated circuits, ensuring they meet performance and functionality requirements.
• Emphasize a system-level perspective in the design process, considering overall system architecture and functionality.
• Incorporate Edge AI principles into digital IC designs, enabling efficient and intelligent processing at the edge of the network.
• RTL implementation for custom circuit design using Verilog/SystemVerilog
• Derive specs and implement necessary customized and highly efficient building blocks such as systolic array, data path controller, scheduler, integer and floating-point processing engine, FFT, etc which are frequency used in various computing architectures.

Simulation, Verification, and Implementation:

• Conduct thorough simulation and verification of digital designs to validate functionality and performance.
• Utilize FPGA in digital IC designs, leveraging its flexibility and reconfigurability for system emulation and architecture exploration
• Perform timing analysis and collaborate with the team to optimize designs for timing closure.
• Contribute to power analysis activities and implement power-efficient design techniques.

Publish research works in prestigious conferences and Journals such as ISSCC, VLSI Symp, A-SSCC, DAC, JSSC and TCAS-I/II.

Prepare detailed design documentation, including specifications, test plans, and reports.

Troubleshoot and debug digital IC designs with a focus on identifying and addressing system-level issues.

Bring creative and innovative solutions to design challenges, staying abreast of industry trends and emerging technologies.

Requirements:

• Master's, or Ph.D. in Electrical Engineering, Computer Engineering, or a related field. The candidate should have prior experiences in IC tape-out of digital/mixed signal SoC and system level modelling and optimization using industry standard tools from leading EDA vendors such as Cadence, Synopsis and Matlab.

Colorectal cancer (CRC) is the third most common cancer globally. Development of therapeutic strategies targeting novel cell types is the need of the hour for CRC treatment. We are looking for candidates keen on working at the intersection of cancer biology, imaging, spatial omics and computational biology to correlate results from cutting-edge technologies to clinical outcome of colorectal cancer (CRC). They should be comfortable working in a highly collaborative, multidisciplinary environment that includes biologists, imaging technologists, pathologists and medical oncologists. This will be a unique opportunity to work on new data types and ask new questions in the rapidly growing field of spatial multi-omics.

Requirements

• PhD (in final year or thesis submitted) in Life Sciences with expertise in cancer biology, immunology, or related fields
• Experience with analysis and interpretation of single-cell and spatial omics data
• Strong communication skills
• The ability to work closely with clinicians and computational biologists

To apply, please email your CV and names of references to [email protected], [email protected]

The above eligibility criteria are not exhaustive. A*STAR may include additional selection criteria based on its prevailing recruitment policies. These policies may be amended from time to time without notice. We regret that only shortlisted candidates will be notified.

Job Description:

We are looking for talented and highly motivated candidate to work on the research and development of flat optics. The recruited scientist will work in the National Semiconductor Translation and Innovation Centre (NSTIC), managed by A*STAR.

The candidate should have a solid background and hands-on experience in the research of optics. Candidate shall be able to perform independent research and solve challenging problems together with the team to deliver high impact results.

The main work scope of the position is as follow:

· Design and simulation of flat optics, including using machine learning method.

· Micro-nanofabrication of flat optics and their characterization.

· Technology development and translation to industry applications.

Job Requirements:

· PhD in Physics or Optics, Photonics, Electrical Engineering, Materials Science with at least 5 years of relevant experience

· Hands-on experiences on flat optics or metaoptics are added advantages.

· Good team player, resilient in tackling challenge, effective communication ability.

The above eligibility criteria are not exhaustive. A*STAR may include additional selection criteria based on its prevailing recruitment policies. These policies may be amended from time to time without notice. We regret that only shortlisted candidates will be notified.

We are seeking a highly skilled High-Speed IO Modeling designer to join our team. The ideal candidate will have a strong background in Electrical or Computer Engineering (Masters/PhD) , with a focus on high speed circuit modeling, statistical analysis, jitter analysis, digital signal processing, and signal integrity. The successful candidate will play a crucial role in developing IO performance models for chiplet-based high-speed communication protocols and generating complete high-speed link performance matrices based on advanced packaging.

Key Responsibilities:

• Develop IO performance models (Tx, Rx) for chiplet-based high-speed communication protocols such as UCIe, AIB, and others.
• Create complete high-speed link models by integrating IO performance models with advanced packaging interconnects.
• Generate comprehensive high-speed link performance matrices, considering various parameters such as technology node, area, latency, power, number of channels, micro bump pitch, and frequency of data rates.
• Collaborate with cross-functional teams to ensure the successful integration of IO performance models into the overall system design.
• Develop parameterised PDN model and fluent in analysing SI and PI simulations
• Stay up-to-date with the latest advancements in high-speed IO modelling techniques and technologies, and apply this knowledge to improve existing models and develop new ones.

Required Qualifications:

• Master's degree in Electrical or Computer Engineering with 2+ years of relevant experience, or a PhD in Electrical or Computer Engineering with 1+ years of relevant experience.
• Strong understanding of package/interconnect/I-O modelling, statistical analysis, jitter analysis, digital signal processing, and signal integrity.
• Experience in mixed-signal circuit design for High-Speed IOs (e.g AIB, AXI, UCIe).
• Proficiency in IBIS-AMI specification and model creation using Keysight ADS.
• Programming and scripting skills in one or more of the following: Python, Perl, C/C++, TCL, or AEL.

Preferred Qualifications:

• Ability to develop and implementing high-speed IO performance models using industry-standard tools/methodologies.
• Experience with advanced packaging technologies and their impact on high-speed link performance.
• Strong problem-solving skills and the ability to think creatively to overcome technical challenges.
• Excellent communication and collaboration skills, with the ability to work effectively in a team environment.

ROLE:
A*STAR-IME is leading the way in establishing industry first 200mm open Silicon Carbide (SiC) R&D program. The program specific focus is on advancing 200mm SiC technologies in key areas such as epitaxy, gate stack, ion implantation, and dry etching, and integrating these modules to fabricate high-performance power devices. Our objective is to drive innovation in power device research, particularly in power MOSFETs rated above 1.2KV. Developing key innovative process is crucial for creating high-performance devices that will contribute to advancements in automotive technologies, vehicle electrification, safety measures, sustainable energy grids, data centers, and industrial & aerospace automation. This role involve growing leadership into ion implantation processes for p-body, channel, guard ring, source contact, and other components. We are currently seeking such individual with ~5 years of experience in ion implantation. The chosen candidate will be responsible for independently supervising ion implantation processes, conducting ion implant simulations, possessing knowledge of crystallography and ion interaction with atoms, having strong understanding of implanters and related thermal processing physics, beam optics, dosimetry systems, and vacuum technology. The ideal candidate should also be willing to collaborate with various departments, the technology development group, and customers. Furthermore, the candidate will contribute to the wide-bandgap team by sharing the ion implantation expertise on compound semiconductor materials and collaborate with other departments working with Si-based technology. The candidate will also be groomed to lead this diffusion process module group of ~6 headcounts into the future.

RESPONSIBILITIES:

• Diagnose malfunctions and using test equipment & software to test faulty tool; applying knowledge of the functional operation of the ion implant equipment

• Support on-site ion implanters in creating, running & characterizing recipes for recipe validation and develop process to achieve the desired dopant profile with excellent
damage recovery.

• Collaborate with vendors to optimize equipment performance and reduce tool downtime

• Analyze data related to implant-related defects formation with quantification and defects minimizations strategy

• Examine work-orders and communicates with equipment operators to resolve equipment problems & determine mechanical and human errors contributed to the issues

• Perform scheduled preventive maintenance tasks with tool operators, especially in checking, cleaning, repairing, detecting and preventing problems

• Responsible for designing experiments for ion implantation at various dose, energy, tilt, and twist levels

REQUIREMENTS:

• Ms/PhD Degree in Electrical Engineering or related field

• >3-5 years industrial experience for high power device design and modeling

• Extensive proficiency in medium to high energy/current ion implantation processes, including a comprehensive knowledge of implant equipment, equipment parts, and
troubleshooting techniques to minimize equipment downtime

• Good understanding of wide bandgap semiconductor materials and their corresponding dopant species

• Expertise in ion channeling, ion bombardment, and their impact on the implant species profile

• In-depth comprehension of defect formation and annihilation processes in the implanted region of semiconductors

• Familiarity with essential device properties resulting from ion implantation

• Adept at mentoring and transferring knowledge to junior staff members

Job Description:

Be part of an exciting Team working on cutting-edge advanced packaging process technologies. Partner and work with various FAB users, to always enable smooth operations and develop packaging solutions and taking the solutions from concept to production. Responsibilities will also include assisting in operations support in FAB clean rooms to make sure all rounded supports are provided.

This position is based in Singapore.

Responsibilities:

• Looking for a reliable, agile, and professional individual.
• Oversee the Team spare/ chemicals / inventories stores – upkeep with good house-keepings, periodic cycle counts. Maintain the inventory database, ensuring timely and accurate recordings, raise purchase requests accordingly.
• Take charge and provide day to day supports in all logistics needs and initiate material/spare parts procurement when required to ensure smooth Fab operations.
• Accountable for the inventory movements required to enable smooth lot operations across IME Premises.
• Follow through the orders from the start of purchase till delivery and to ensure that goods are delivered are on time.
• Work seamlessly with various stakeholders to provide logistics support and deliver inventory on time.
• Work towards and employ critical thinking, put-up good initiatives to move forward to digitalization.
• Ability to work in a multi-task environment.

Experience:

• Education: Diploma in engineering discipline. Preferably in supply chain logistic/ warehouse operations.
• At least 2 years of warehouse operations.
• Preferably some experience in semiconductor / manufacturing environment, with good wide contacts with semiconductor material suppliers, equipment vendors.
• Strong knowledge-based on excel skills and some knowledge of supply chain analytics.

As part of IME Integrated Circuit Design and System Department, we are looking for a candidate with relevant experience in ultrasound imaging system design. This candidate will define an ultrasound transducer array beamformer IC architecture for imaging applications. The candidate will work closely with MEMS team on system architecture, circuit design, simulation, validation, and integration.

Role & Responsibilities

• Perform system-level beamformer architecture, design, and simulation, to derive circuit-level design specifications.
• Beamforming array optimization using AI algorithms.
• Design and implementation of beamformer algorithm in hardware.
• Work together with team to investigate novel circuit/system solutions to create new inventions.

Requirements

• Master’s / PhD degree in Electrical Engineering or equivalent
• Good understanding of ultrasound imaging systems and beamforming theories.
• Knowledge of AI algorithms and implementation will be a plus
• Familiar with IC test equipment such as oscilloscope, spectrum analyzer, etc.
• Able to generate high-quality scientific publications and patents
• Team player, quick learner and self-driven

Job Description:

• Be a member of the leadership team to achieve the vision and mission of the National GaN Technology Centre (NGTC).
• Lead the Technology, Engineering and Industry team in technology road mapping and R&D pathfinding in device architecture, fabrication process technology, and MMIC design.
• Lead the Technology team, which comprises (a) characterization & modelling, (b) MMIC design, testing & model validation, (c) device failure and reliability analysis, (d) ultra high frequency GaN-on-SiC device design, layout, fabrication and characterization, and (e) low voltage GaN-on-Silicon device design, layout, fabrication and characterization.
• Coordinate with the Engineering team to develop ultra high frequency devices, ultra low voltage devices, and their MMICs.
• Coordinate with the Engineering and Operations teams to ensure timely delivery of the projects.
• Initiate and secure research grants and industry funding.
• Initiate, coordinate and manage research collaborations with IHLs and industry partners.
• Provide regular progress report of the Technology team’s activities to NGTC management.
• Represent NGTC in customer meetings.

Requirements:

• PhD in Electrical & Electronic Engineering, Materials Science and Engineering, Microelectronics Engineering, or closely related fields are welcome to apply.
• Deep understanding of GaN-HEMT device physics and GaN-based MMICs.
• At least 12 years of post-PhD hands-on experience in GaN HEMT and MMIC technology development including design, characterization (e.g. DC, small-signal and load-pull measurement), and modelling; preferably in RF GaN-on-Silicon or GaN-on-SiC technologies.
• At least 12 years of experience in leading a team of research engineers/scientists in managing multiple projects.
• Candidates with industry experience in GaN related R&D would be preferred.
• Working knowledge and hands-on experience in Design of Experiments (DOE) methodologies, statistical root cause analysis, problem-solving methods, and in-line metrology techniques is desired.
• Possess strong leadership, project management, interpersonal and oral/written communication skills.

The above eligibility criteria are not exhaustive. A*STAR may include additional selection criteria based on its prevailing recruitment policies. These policies may be amended from time to time without notice. We regret that only shortlisted candidates will be notified.

Job Summary:

DxD Hub is an end-to-end productisation partner, committed to transforming the MedTech landscape in Singapore through innovative solutions sourced from both local and regional partners. Our strengths are in cross-disciplinary product development particularly in molecular diagnostics, protein immune assays, and digital diagnostic technologies. We are seeking a skilled and experienced Mechanical Design Engineer to join our dynamic team. The successful candidate will take on the responsibility of leading a team in the design and development of mechanical systems. The candidate will work closely with cross-functional teams to lead projects, conducting feasibility studies and overseeing product development. They will also ensure that designs comply with both technical specifications and regulatory standards.

Job Roles and Responsibilities:

• Conceptualise, design, and develop mechanical components and mechanisms for medical devices.
• Responsible for the preparation and maintaining design documentation such as specifications, bill of materials, test protocols, test reports, etc.
• Lead a team to perform structural analysis, thermal analysis, and other relevant tests to validate and optimise designs.
• Responsible for feasibility tests to assess the viability and performance of proposed designs.
• Work closely with cross-functional teams, including teams in molecular diagnostics, protein immune assays, and digital diagnostic technologies as well as electrical engineers, software engineers, and project managers.
• Ensure compliance with DxD Hub Quality Management system, standards, and regulatory requirements such as FDA, ISO13485, etc.

Job Requirements:

• Master’s or bachelor’s degree in mechanical engineering, or related field.
• At least 5 years relevant experience in mechanical design engineering and completed one full product development cycle.
• Three years of experience or equivalent in close and collaborative work with design managers and product managers.
• Experiences in leading a mechanical design team is a plus.
• Proficient in CAD software, such as SolidWorks, AutoCAD, etc.
• Strong understanding of engineering principles, materials, and manufacturing processes.
• Excellent problem-solving and analytical skills.
• Effective communication skills and ability to work collaboratively in a team.
• Knowledge in quality, product verification test, QMS, and ISO13485 would be an advantage.
• Self-driven team player who can work in a fast-paced environment.

The above eligibility criteria are not exhaustive. A*STAR may include additional selection criteria based on its prevailing recruitment policies. These policies may be amended from time to time without notice. We regret that only shortlisted candidates will be notified.

Interested applicants are invited to apply directly at the NUS Career Portal

Your application will be processed only if you apply via NUS Career Portal

We regret that only shortlisted candidates will be notified.

Job Description

The Electrical and Computer Engineering (ECE) Department at the National University of Singapore (NUS) is seeking qualified applicants for the position of Research Engineer to join our team and contribute to our ongoing research projects related to IC design.

Responsibilities:

• Explore heterogeneous systems with silicon chips being integrated on unconventional substrates such as flexible and stretchable, for ultra-low power always-on and intelligent silicon platforms.
• Work on innovative circuit techniques with very wide power-performance scaling to minimize the system energy while providing targeted levels of performance on demand. Such techniques will be investigated for digital sub-systems in advanced technologies.
• Be responsible to conduct research at the circuit level, defining and validating design options and defining new integrated circuit techniques.

We offer a competitive salary commensurate with qualifications and experience, along with a stimulating research environment and access to state-of-the-art facilities. This is a full-time position with an initial contract duration of 12 months, with potential for renewal based on performance and funding availability.

Qualifications

The candidate must possess:

• Possess a Bachelor/Master’s degree in either Electrical Engineering or strictly related (e.g., Computer, Communication, or Information Engineering).
• Activity performed in multiple research environments and industrial experience are highly valued.
• Expertise on the project scope, ultra-low power always-on and intelligent silicon platforms.
• Knowledge on circuit and system-level chip design is valued.
• Analytical and problem-solving skills.
• Open to fixed term contract.

Job Description:

Are you eager to dive into the world of cutting-edge electronics? Join us as a Heterogeneous Integration Assistant Laboratory Officer/laboratory Officer and become a key player in advancing next-generation technology. In this role, you’ll gain hands-on experience with state-of-the-art equipment and contribute to groundbreaking research in electronic module integration.

Key Responsibilities:

• Heterogeneous Integration: Engage in the complete processes of semiconductor package assembly, including die preparation (dicing and back-grinding)
• Equipment Operation: Operate and maintain various high-tech instruments/equipment used in the heterogeneous integration processes, ensuring they are in optimal condition and ready for use.
• Process Support: Manage equipment readiness, and ensure the availability of processing materials, and support assembly lap operations
• Inspection and Analysis: Conduct metrology inspections and analyse colour coded data to ensure the highest quality of assembly processes

What You’ll Gain:

• Cutting-Edge Experience: Work on the latest assembly and packaging equipment in heterogeneous integration and contribute to innovative research in advanced electronics.
• Professional Growth: Receive hands-on training on assembly & packaging equipment operations and mentorship from experienced professionals, with opportunities for career development within a forward-thinking company.
• Collaborative Environment: Be part of a dynamic team that values your input and fosters a culture of learning and collaboration.

Qualifications:

• Diploma or ITE graduate in Materials Science, Mechanical Engineering, Chemical Engineering, Chemistry, Electrical Engineering, or Electronics.
• We value enthusiasm and a willingness to learn over extensive experience.
• Strong communication skills, industry awareness, and problem-solving abilities.
• Highly motivated and a proactive self-starter with the ability to work effectively in a team.

Why Join Us?:

At "Institute of Microelectronics", we are dedicated to developing talent and providing our team members with the tools and support they need to succeed. We offer a vibrant and inclusive work environment where innovation thrives. Enjoy a range of benefits including ongoing training, career progression opportunities, and the chance to work on pioneering projects.

Apply today and start your journey with us in the exciting field of heterogeneous integration!

Scientist/Senior scientist will be part of heterogeneous integration group focused on development of the quantum packaging technology platforms to integrate qubit and control chip on superconductivity interposer.

He/she will work with cross functional team to:

• Design and simulation of superconducting circuits for salable quantum processor in 3D flip-chip architecture.
• Explore and develop superconducting nanowire base photo detector.
• Design and layout of circuits components of a superconducting qubit.
• Develop design rules and PDK for quantum packaging technologies.
• Provide quantum packaging solutions to meet the system requirements based on the simulation results.
  Prepare competitive grant research proposals and lead execution of these proposals.
  Engage industry partners to align and develop the building blocks required for next generations quantum packaging platforms.

Job Requirements:

• Master/PhD in quantum computing; Electrical and Computer Engineering; Material science area
• 4 to 5 years’ experience in superconducting circuits design and simulation for scalable quantum processor. Deep understanding on 3D quantum package
• Working experience on measuring loss and dielectric constants of materials at cryogenic temperatures
• Strong communication, industry awareness, and problem-solving skills.
• Highly motivated to succeed, a self-starter who is driven and able to work with others effectively to get things done.

ROLE:
A*STAR-IME is leading the way in establishing industry first 200mm open Silicon Carbide (SiC) R&D program. The program specific focus is on advancing 200mm SiC technologies in key areas such as epitaxy, gate stack, ion implantation, and dry etching, and integrating these modules to fabricate high-performance power devices. Our objective is to drive innovation in power device research, particularly in power MOSFETs rated above 1.2KV. Developing key innovative process is crucial for creating high-performance devices that will contribute to advancements in automotive technologies, vehicle electrification, safety measures, sustainable energy grids, data centers, and industrial & aerospace automation. This role involve growing leadership into ion implantation processes for p-body, channel, guard ring, source contact, and other components. We are currently seeking such individual with ~5 years of experience in ion implantation. The chosen candidate will be responsible for independently supervising ion implantation processes, conducting ion implant simulations, possessing knowledge of crystallography and ion interaction with atoms, having strong understanding of implanters and related thermal processing physics, beam optics, dosimetry systems, and vacuum technology. The ideal candidate should also be willing to collaborate with various departments, the technology development group, and customers. Furthermore, the candidate will contribute to the wide-bandgap team by sharing the ion implantation expertise on compound semiconductor materials and collaborate with other departments working with Si-based technology. The candidate will also be groomed to lead this diffusion process module group of ~6 headcounts into the future.

RESPONSIBILITIES:

• Diagnose malfunctions and using test equipment & software to test faulty tool; applying knowledge of the functional operation of the ion implant equipment

• Support on-site ion implanters in creating, running & characterizing recipes for recipe validation and develop process to achieve the desired dopant profile with excellent
damage recovery.

• Collaborate with vendors to optimize equipment performance and reduce tool downtime

• Analyze data related to implant-related defects formation with quantification and defects minimizations strategy

• Examine work-orders and communicates with equipment operators to resolve equipment problems & determine mechanical and human errors contributed to the issues

• Perform scheduled preventive maintenance tasks with tool operators, especially in checking, cleaning, repairing, detecting and preventing problems

• Responsible for designing experiments for ion implantation at various dose, energy, tilt, and twist levels

REQUIREMENTS:

• Ms/PhD Degree in Electrical Engineering or related field

• >3-5 years industrial experience for high power device design and modeling

• Extensive proficiency in medium to high energy/current ion implantation processes, including a comprehensive knowledge of implant equipment, equipment parts, and
troubleshooting techniques to minimize equipment downtime

• Good understanding of wide bandgap semiconductor materials and their corresponding dopant species

• Expertise in ion channeling, ion bombardment, and their impact on the implant species profile

• In-depth comprehension of defect formation and annihilation processes in the implanted region of semiconductors

• Familiarity with essential device properties resulting from ion implantation

• Adept at mentoring and transferring knowledge to junior staff members

Role & Responsibilities:

• Responsibilities include diagnosing appropriate levels of metal/metal-alloy contaminations by oxygen and other contaminants; determining the root cause of contaminants, and establishing protocols for characterizations.
• Hands-on providing support for onsite metal PVD, including creating, running, and characterizing recipes to achieve the lowest resistances.
• Collaborates closely with equipment vendors and device engineers to optimize the metal-stack for device performances and robustness/reliability, from low to high temperatures.
• Lead data analysis related to implant-induced defects and cleaning issues on metal contacts with solutions development.
• Examines the work-functions of metal/metal-alloys suitable for Ohmic contact on SiC.
• Responsible for designing experiments for Ohmic contact on various SiC substrates with different doping types, determining their impact, and resolving issues to achieve the lowest specific contact resistances.
• Designing cleaning processes to obtain ideal Schottky diode using various metal/metal-alloys on SiC for high-performance applications.
• Work closely with cross-departmental and integration teams and in 3-5 years’ time develop a WBG backend process integration team of at least 4 persons.

Requirements:

• PhD Degree in Material Science, Physics, Electrical Engineering or related field.
• >8 years related industrial experience inclusing backend process module integration.
• Extensive hands-on experience in PVD (Physical Vapor Deposition) processing for metal depositions and interface tuning.
• Strong understanding of metal-semiconductor contact physics.
• Expertise in work-function tunings of metal and metal-alloy.
• Proficiency in modulating electron affinity through implantation or surface treatments of semiconductors.
• Familiarity with wide band-gap semiconductor materials and their interaction with metal/metal-alloys at various temperatures.
• Thorough fundamentals in Ohmic contact and Schottky diode physics, as well as the impact of defects and contaminations on electrical properties.
• Skilled at mentoring and transferring knowledge to junior staff members.
• Excellent communication skills to effectively address customers' needs, concerns, and solution requirements.

Position:

Our team is starting an exciting project to develop RF/mm-wave ICs for the future of communication for Beyond-5G to 6G applications. We are looking for an exceptional candidate with relevant expertise to join us. Our team focuses on developing communication modules for both terrestrial and non-terrestrial needs. You will work at the Institute of Microelectronics (IME) to create the most advanced semiconductor technologies. You will collaborate with world-leading industries and academic institutions on innovative designs and strategic intellectual properties.

Job Responsibility:

• Benchmarking with datasheets, prior arts, and latest academic work.
• In-depth design and analysis with electrical/electromagnetic simulations.
• In-depth analysis of design robustness, optimization, and testability.
• In-depth presentations and report recording of design, layout, test and measurement, and fault analysis.
• Working independently, as a team, and with collaborators from industry and academic backgrounds.

Pre-requisites:

• A Master’s / PhD Degree in Electronics or Electrical Engineering and proven academic and industry experience are pluses.
• Experienced in designing RF/mmWave such as LNA, mixer, PA, buffer, transmission line, baluns, PLL, VCO, etc.
• Experienced in designing base-band/mixed-signal circuits, such as amplifiers, bandgap, ADC, DAC, etc., is a plus.
• Knowledgeable in design trade-offs at the circuit-level specification.
• Experienced in designing in CMOS and SiGe technology or any other technologies like RF-SOI and compound-semiconductor is a plus.
• Proficient in using Cadence and EM tools like ADS for EM circuit simulation, IC layout, LVS, and DRC verification.
• Familiarity with IC measurement and debugging and hands-on experience with RF/mmWave equipment such as spectrum analyzer, network analyzer, oscilloscope, and probe station.
• Good publication record with a strong awareness of state-of-the-art.
• Good communication and teamwork.

ROLE:
IME is leading the effort to establish the industry leading Silicon Carbide R&D program. This program aims to advance 200mm Silicon Carbide technologies in various areas, such as epitaxy, device design, process integration & fabrication, and power module packaging. The main objective is to drive disruptive innovations in power device research, with a specific focus on >1.2KV power MOSFETs. These innovations are intended to enhance automotive technologies, vehicle electrification, safety measures, sustainable energy grids, and industrial automation. Key aspects to demonstrate for this role include high power device design, novel device concepts, doping design, gate oxidation, and wide-bandgap process simulations. To achieve this, we are seeking individual with extensive industry experience in using Synopsys/Silvaco TCAD simulator, relevant device characterization skills, design simulation development abilities, a willingness to mentor junior staffs, and strong interpersonal skills. The candidate will contribute to the wide-bandgap & Silicon Carbide team by utilizing their device knowledge, guiding team on device characterization, implementing state-of-art Silicon Carbide power MOSFETs (Planar, Trench & Super-Junction), and innovative novel power MOSFETs for future applications.

RESPONSIBILITIES:

• TCAD modeling & simulation, novel high power device design, simulation, and device characterization

• Design and simulate high voltage Silicon Carbide MOSFETs (planar, trench, SJ MOSFET, IGBT) with a blocking voltage of >1.2K using Synopsys/Silvaco simulator

• Design & simulate practical and effective junction terminations

• Provide guidances on device structure, optimizing cell, power/performance analysis, process risk assessment, and recommendations for experimental split and improvement

• Develop and apply fundamental MOS device physics-based TCAD modelling & electric field management to calculate band structure, carrier transport, blocking voltage,
switching properties, and thermal management for vertical power devices in the presence of interface state density, gate oxide defects, and defects in Silicon Carbide

• Model transport and carrier scattering in devices operating in extreme ambient conditions

• Collaborate with diverse teams, including process integration, characterization, and circuit design engineers, to analyze and troubleshoot device-related issues during
development

• Serve as a resource for colleagues with less experience, and lead small projects with manageable risks and resource requirements

• Work closely with both internal and external customers to understand customer issues and align their demands. And grow this wide-bandgap team to ~5 headcounts in the
next 3 years.

JOB REQUIREMENTS:

• PhD in Electrical Engineering or related field

• >10 years industrial experience for high power device design and modeling

• Deep knowledge of high voltage, high power MOSFETs (including Planar, Trench, S-J MOSFETs, and IGBTs) design and device characterization on 4H-SiC & GaN substrates.

• Solid understanding of wide-bandgap semiconductor materials and the strong physics of MOSFET devices

• Ability to teach and transfer knowledge to junior staff members

• Ability to effectively communicate and plan with customers regarding their needs, issues, and demands

Job Description

The Engineer will be responsible for driving electro-mechanical product development in compliance with ISO 13485 standards across multiple levels, from component to product. The role includes planning and monitoring New Product Introduction (NPI) programs, managing engineering changes, and maintaining documentation, including Design History Files. The position requires close coordination with both internal and external suppliers, adhering to Quality Management System and regulatory standards.

Key Skills and Experience:

• Bachelor degree in Mechanical Engineering with 3+ years in electro-mechanical systems.
• Technical proficiency in optimizing designs for mechanical and electro-mechanical systems.
• Solid understanding of metal and plastic manufacturing processes for product design.
• Proficiency in 3D CAD software (e.g., SolidWorks), including GD&T and kinematic calculations.

Attributes:

• Analytical and detail-oriented, with a collaborative and hands-on approach.

The above eligibility criteria are not exhaustive. A*STAR may include additional selection criteria based on its prevailing recruitment policies. These policies may be amended from time to time without notice. We regret that only shortlisted candidates will be notified.

Job Description:

DxD Hub is an end-to-end productisation partner, committed to transforming the MedTech landscape in Singapore through innovative solutions sourced from both local and regional partners. Our strengths are in cross-disciplinary product development particularly in molecular diagnostics, protein immune assays, and digital diagnostic technologies.

We are seeking a Senior Engineer with system integration expertise with design oversight to join our team. As a vital member of our team, you will be involved in the design, development, and testing of medical devices, ensuring compliance with regulatory standards and industry best practices.

Your role will involve collaborating with cross-functional teams to create innovative solutions encompassing hardware, software and chemistry by conducting verification and validation activities, and providing technical support throughout the product lifecycle.

The ideal candidate will have a solid understanding of system integration principles, best practices in verification and validation testing, and knowledge of medical device regulations (such as ISO 13485).

Join our dynamic team and contribute to the development of cutting-edge medical devices that improve patient care and well-being.

Job Roles and Responsibilities:

• Develop high-level system architectures that meet user requirements while considering design feasibility.
• Ensure that all system components are compatible and can be integrated seamlessly.
• Design and implement integration strategies and validate the functions as intended while adhering to design principles.
• Lead collaborative teams for the design, implementation, and validation while is capable to perform hand-on testing independently if required to complete engineering or verification studies.
• Lead creating innovative solutions that align with both technical specification and user needs for medical products.
• Coordinate between design, engineering, assay, project manager, and other disciplines to ensure cohesive product development.
• Author or oversee the writing of protocols and reports.
• Foster collaboration among team members to address challenges from both a technical and design perspective.
• Creating and maintaining technical documentation, including design specifications, test protocols, and reports, ensuring compliance with regulatory requirements such as ISO 13485.

Job Requirements:

• Experience in system integration and innovation.
• Bachelor’s degree in Engineering, Design or equivalent engineering or science background.
• Comfortable with navigating uncertain situations without clear guideline.
• Adaptability to changing work conditions and project requirements.
• 5-10 years’ experience in cross-functional product development roles and completed one full product development cycle.
• Track record in working effectively with diverse teams, including engineering, design, and marketing.
• Strong interpersonal skills to facilitate communication between technical and non-technical stakeholders and ability to summarize and communicate complex problems in simple terms.
• Strong analytical skills to troubleshoot integration issues while considering design implications.
• Able to break down complex system in simple steps and identify interfaces between modules and generate system diagrams, workflows and reports.
• Curious and proactive approach to gather information necessary for decision-making.
• Knowledge of statistical tools for data analysis such as (Python/Matlab/Origin/LabView) will be a strong advantage.
• Experience with design software. Experience with CFD simulation software such as ANSYS is advantageous.

The above eligibility criteria are not exhaustive. A*STAR may include additional selection criteria based on its prevailing recruitment policies. These policies may be amended from time to time without notice. We regret that only shortlisted candidates will be notified.

Position:

Our team is starting an exciting project to develop RF/mm-wave ICs for the future of communication for Beyond-5G to 6G applications. We are looking for an exceptional candidate with relevant expertise to join us. Our team focuses on developing communication modules for both terrestrial and non-terrestrial needs. You will work at the Institute of Microelectronics (IME) to create the most advanced semiconductor technologies. You will collaborate with world-leading industries and academic institutions on innovative designs and strategic intellectual properties.

Job Responsibility:

• Benchmarking with datasheets, prior arts, and latest academic work.
• In-depth design and analysis with electrical/electromagnetic simulations.
• In-depth analysis of design robustness, optimization, and testability.
• In-depth presentations and report recording of design, layout, test and measurement, and fault analysis.
• Working independently, as a team, and with collaborators from industry and academic backgrounds.

Pre-requisites:

• A Master’s / PhD Degree in Electronics or Electrical Engineering and proven academic and industry experience are pluses.
• Experienced in designing RF/mmWave such as LNA, mixer, PA, buffer, transmission line, baluns, PLL, VCO, etc.
• Experienced in designing base-band/mixed-signal circuits, such as amplifiers, bandgap, ADC, DAC, etc., is a plus.
• Knowledgeable in design trade-offs at the circuit-level specification.
• Experienced in designing in CMOS and SiGe technology or any other technologies like RF-SOI and compound-semiconductor is a plus.
• Proficient in using Cadence and EM tools like ADS for EM circuit simulation, IC layout, LVS, and DRC verification.
• Familiarity with IC measurement and debugging and hands-on experience with RF/mmWave equipment such as spectrum analyzer, network analyzer, oscilloscope, and probe station.
• Good publication record with a strong awareness of state-of-the-art.
• Good communication and teamwork.

ROLE:
IME is leading the effort to establish the industry leading Silicon Carbide R&D program. This program aims to advance 200mm Silicon Carbide technologies in various areas, such as epitaxy, device design, process integration & fabrication, and power module packaging. The main objective is to drive disruptive innovations in power device research, with a specific focus on >1.2KV power MOSFETs. These innovations are intended to enhance automotive technologies, vehicle electrification, safety measures, sustainable energy grids, and industrial automation. Key aspects to demonstrate for this role include high power device design, novel device concepts, doping design, gate oxidation, and wide-bandgap process simulations. To achieve this, we are seeking individual with extensive industry experience in using Synopsys/Silvaco TCAD simulator, relevant device characterization skills, design simulation development abilities, a willingness to mentor junior staffs, and strong interpersonal skills. The candidate will contribute to the wide-bandgap & Silicon Carbide team by utilizing their device knowledge, guiding team on device characterization, implementing state-of-art Silicon Carbide power MOSFETs (Planar, Trench & Super-Junction), and innovative novel power MOSFETs for future applications.

RESPONSIBILITIES:

• TCAD modeling & simulation, novel high power device design, simulation, and device characterization

• Design and simulate high voltage Silicon Carbide MOSFETs (planar, trench, SJ MOSFET, IGBT) with a blocking voltage of >1.2K using Synopsys/Silvaco simulator

• Design & simulate practical and effective junction terminations

• Provide guidances on device structure, optimizing cell, power/performance analysis, process risk assessment, and recommendations for experimental split and improvement

• Develop and apply fundamental MOS device physics-based TCAD modelling & electric field management to calculate band structure, carrier transport, blocking voltage,
switching properties, and thermal management for vertical power devices in the presence of interface state density, gate oxide defects, and defects in Silicon Carbide

• Model transport and carrier scattering in devices operating in extreme ambient conditions

• Collaborate with diverse teams, including process integration, characterization, and circuit design engineers, to analyze and troubleshoot device-related issues during
development

• Serve as a resource for colleagues with less experience, and lead small projects with manageable risks and resource requirements

• Work closely with both internal and external customers to understand customer issues and align their demands. And grow this wide-bandgap team to ~5 headcounts in the
next 3 years.

JOB REQUIREMENTS:

• PhD in Electrical Engineering or related field

• >10 years industrial experience for high power device design and modeling

• Deep knowledge of high voltage, high power MOSFETs (including Planar, Trench, S-J MOSFETs, and IGBTs) design and device characterization on 4H-SiC & GaN substrates.

• Solid understanding of wide-bandgap semiconductor materials and the strong physics of MOSFET devices

• Ability to teach and transfer knowledge to junior staff members

• Ability to effectively communicate and plan with customers regarding their needs, issues, and demands

Job Description:

We are looking for talented and highly motivated candidate to work on the research and development of flat optics. The recruited scientist will work in the National Semiconductor Translation and Innovation Centre (NSTIC), managed by A*STAR.

The candidate should have a solid background and hands-on experience in the research of optics. Candidate shall be able to perform independent research and solve challenging problems together with the team to deliver high impact results.

The main work scope of the position is as follow:

· Design and simulation of flat optics, including using machine learning method.

· Micro-nanofabrication of flat optics and their characterization.

· Technology development and translation to industry applications.

Job Requirements:

· PhD in Physics or Optics, Photonics, Electrical Engineering, Materials Science

· Hands-on experiences on flat optics or metaoptics are added advantages.

· Good team player, resilient in tackling challenge, effective communication ability.

The above eligibility criteria are not exhaustive. A*STAR may include additional selection criteria based on its prevailing recruitment policies. These policies may be amended from time to time without notice. We regret that only shortlisted candidates will be notified.

Roles and Responsibilities:

• TCAD modeling, simulation, and innovative design of high power electronics devices, as well as device characterization.
• Develop and simulate high power SiC MOSFETs (planar, trench, Super-Junction MOSFET, IGBT) with a blocking voltage exceeding 1.2K using the industry-standard Synopsys/Silvaco simulator.
• Create and simulate practical & efficient junction terminations.
• Model transport and carrier scattering in devices operating under extreme ambient conditions.
• Serve as a valuable resource for colleagues with lesser TCAD power electronics experience and take lead in group projects with managing risks & resource requirements.
• Foster close collaborations with both internal and external customers to fully understand customer issues and requirements.

Job Requirements:

• PhD Degree in Electrical Engineering or related field.
• >2-3 years industrial experience for high power devices design and modeling.
• Thorough understanding of different types of high-voltage, high-power MOSFETs including Planar, Trench, Super-Junction MOSFETs, and IGBTs, with a focus on design and device characterizations.
• Hands-on skill in designing MOSFET/diode layouts.
• Excellent communication skills to effectively engage with customers, address their needs, resolve issues, and meet demands.

Join the Institute of Microelectronics (IME) to be immersed in cutting-edge semiconductor research. As a research institute within the Agency for Science, Technology and Research (A*STAR), IME bridges the gap between academia and industry. Our mission is to accelerate innovation in advanced packaging, piezoMEMS, SiC, RF/mmwave GaN, and photonics & sensors, and to develop talent and inspire in Singapore.

We are looking for a passionate individual to lead our Technology-Business Development (Tech-Biz) department. You will be responsible for leading the department to define and implement our strategies for technology-business development, account management, sales and marketing, and ecosystem development. If you"re excited about the future of microelectronics and wish to contribute to the development of Singapore’s innovation engine for microelectronics, we want you on our team!

Job Responsibilities

• Technology-business Development: Lead the department to define and develop strategies for technology translation.
• Customer Relationship Management: Lead the department to win and retain industry partners and customers for high-value and sustainable engagements.
• Sales: Collect, maximise leads and close customer collaboration projects.
• Marketing: Develop and execute marketing strategies to promote IME’s research capabilities to the industry. Represent IME at international conferences and exhibitions.
• Collaborate with Technology Development (TD) Teams: Partner with our "Technology Development" teams to craft robust value propositions for the industry and shape IME’s ‘go-to-market’ strategy. Detect, track and provide market trends and needs for the TD teams.
• Ecosystem Development: Liaise, coordinate and engage effectively with key internal stakeholders, including A*STAR’s Industry and Enterprise Group, other economic agencies and public sector agencies, to align efforts and achieve common goals for the Singapore semiconductor ecosystem.

Job Requirements:

• Degree in Science or Engineering.
• At least 10-15 years of relevant work experience.
• Able to structure and negotiate collaboration agreements.
• Strong communication (written and verbal), marketing and interpersonal skills.
• Strong analytical skills.
• Results oriented, pro-active, and a team player.
• Adaptable and comfortable working in a fast-paced and fast-changing environment.
• Passion to develop Singapore’s semiconductor industry.

The National Quantum Federated Foundry (NQFF), hosted at the Institute of Materials Research and Engineering (IMRE), part of the Agency for Science, Technology, and Research (A*STAR), is looking for a research scientist who is experienced in RF electronics simulations and design. The successful candidate will be part of a team of research scientists and engineers working on devices and hardware for quantum technologies, including superconducting qubits, resonator systems, opto-electronic and photonics devices, control systems, and so on. The work in NQFF will support local and international efforts to develop and translate quantum technologies to realize exciting real-world applications.

The roles of the successful candidate will include:

• Design and simulation of electrical and opto-electronic devices for quantum technologies
• Assist the formulation of device fabrication and testing plans
• Operation and maintenance of simulation software and workstations
• Analysis and presentation of scientific results

Job requirements:

• PhD degree in physics, applied physics, electrical engineering, material science & engineering, or any other relevant disciplines.
• At least more than 10 years of relevant experience
• Experience in RF hardware/electronics simulations and design
• Familiarity with superconducting qubit design and cryogenic devices is highly desired
• Expertise in simulation software (COMSOL, HFSS, etc) and scripting/programming
• Ability to independently plan and execute research work
• Ability to communicate well and work closely with team members

The above eligibility criteria are not exhaustive. A*STAR may include additional selection criteria based on its prevailing recruitment policies. These policies may be amended from time to time without notice. We regret that only shortlisted candidates will be notified.

Role & Responsibilities:

• Responsibilities include diagnosing appropriate levels of metal/metal-alloy contaminations by oxygen and other contaminants; determining the root cause of contaminants, and establishing protocols for characterizations.
• Hands-on providing support for onsite metal PVD, including creating, running, and characterizing recipes to achieve the lowest resistances.
• Collaborates closely with equipment vendors and device engineers to optimize the metal-stack for device performances and robustness/reliability, from low to high temperatures.
• Lead data analysis related to implant-induced defects and cleaning issues on metal contacts with solutions development.
• Examines the work-functions of metal/metal-alloys suitable for Ohmic contact on SiC.
• Responsible for designing experiments for Ohmic contact on various SiC substrates with different doping types, determining their impact, and resolving issues to achieve the lowest specific contact resistances.
• Designing cleaning processes to obtain ideal Schottky diode using various metal/metal-alloys on SiC for high-performance applications.
• Work closely with cross-departmental and integration teams and in 3-5 years’ time develop a WBG backend process integration team of at least 4 persons.

Requirements:

• PhD Degree in Material Science, Physics, Electrical Engineering or related field.
• >8 years related industrial experience inclusing backend process module integration.
• Extensive hands-on experience in PVD (Physical Vapor Deposition) processing for metal depositions and interface tuning.
• Strong understanding of metal-semiconductor contact physics.
• Expertise in work-function tunings of metal and metal-alloy.
• Proficiency in modulating electron affinity through implantation or surface treatments of semiconductors.
• Familiarity with wide band-gap semiconductor materials and their interaction with metal/metal-alloys at various temperatures.
• Thorough fundamentals in Ohmic contact and Schottky diode physics, as well as the impact of defects and contaminations on electrical properties.
• Skilled at mentoring and transferring knowledge to junior staff members.
• Excellent communication skills to effectively address customers' needs, concerns, and solution requirements.