As part of IME Integrated Circuit Design and System Department, we are looking for a candidate with relevant experience in ultrasound imaging system design. This candidate will define an ultrasound transducer array beamformer IC architecture for imaging applications. The candidate will work closely with MEMS team on system architecture, circuit design, simulation, validation, and integration.

Role & Responsibilities

• Perform system-level beamformer architecture, design, and simulation, to derive circuit-level design specifications.
• Beamforming array optimization using AI algorithms.
• Design and implementation of beamformer algorithm in hardware.
• Work together with team to investigate novel circuit/system solutions to create new inventions.

Requirements

• Master’s / PhD degree in Electrical Engineering or equivalent
• Good understanding of ultrasound imaging systems and beamforming theories.
• Knowledge of AI algorithms and implementation will be a plus
• Familiar with IC test equipment such as oscilloscope, spectrum analyzer, etc.
• Able to generate high-quality scientific publications and patents
• Team player, quick learner and self-driven

Job Description:

• Be a member of the leadership team to achieve the vision and mission of the National GaN Technology Centre (NGTC).
• Lead the Technology, Engineering and Industry team in technology road mapping and R&D pathfinding in device architecture, fabrication process technology, and MMIC design.
• Lead the Technology team, which comprises (a) characterization & modelling, (b) MMIC design, testing & model validation, (c) device failure and reliability analysis, (d) ultra high frequency GaN-on-SiC device design, layout, fabrication and characterization, and (e) low voltage GaN-on-Silicon device design, layout, fabrication and characterization.
• Coordinate with the Engineering team to develop ultra high frequency devices, ultra low voltage devices, and their MMICs.
• Coordinate with the Engineering and Operations teams to ensure timely delivery of the projects.
• Initiate and secure research grants and industry funding.
• Initiate, coordinate and manage research collaborations with IHLs and industry partners.
• Provide regular progress report of the Technology team’s activities to NGTC management.
• Represent NGTC in customer meetings.

Requirements:

• PhD in Electrical & Electronic Engineering, Materials Science and Engineering, Microelectronics Engineering, or closely related fields are welcome to apply.
• Deep understanding of GaN-HEMT device physics and GaN-based MMICs.
• At least 12 years of post-PhD hands-on experience in GaN HEMT and MMIC technology development including design, characterization (e.g. DC, small-signal and load-pull measurement), and modelling; preferably in RF GaN-on-Silicon or GaN-on-SiC technologies.
• At least 12 years of experience in leading a team of research engineers/scientists in managing multiple projects.
• Candidates with industry experience in GaN related R&D would be preferred.
• Working knowledge and hands-on experience in Design of Experiments (DOE) methodologies, statistical root cause analysis, problem-solving methods, and in-line metrology techniques is desired.
• Possess strong leadership, project management, interpersonal and oral/written communication skills.

The above eligibility criteria are not exhaustive. A*STAR may include additional selection criteria based on its prevailing recruitment policies. These policies may be amended from time to time without notice. We regret that only shortlisted candidates will be notified.

Interested applicants are invited to apply directly at the NUS Career Portal

Your application will be processed only if you apply via NUS Career Portal

We regret that only shortlisted candidates will be notified.

Job Description

About the Centre for Research in Health Systems Performance (CRiHSP)

Optimizing the performance of health systems is essential to ensuring the wellbeing and longevity of populations worldwide. Singapore is particularly well placed to lead research in this field as its health system has been consistently ranked as one of the best in the world based in independent evaluation with the Global Burden of Disease data. The new Centre for Research in Health Systems Performance (CRiHSP) aims to advance research in this area within the Yong Loo Lin School of Medicine of the National University of Singapore (NUS) as the leading centre for research in health systems in Asia with the following core functions:

1. Research: empirical and methodological research and evidence synthesis on health systems performance with a particular focus on Value Based Healthcare.
2. Health policy intelligence: health policy impact analysis aimed at policy makers, service providers, researchers, and the wider public.
3. Capacity building: formal postgraduate programme (from certificates to PhD), fellowships, mentoring, on-the- job and ad hoc training
4. Contributing to improving NUHS performance: expert advice on the development, implementation, and evaluation of flagship initiatives (including Healthier SG) aimed at making step changes in NUHS performance, and programme evaluation

The multidisciplinary team of researchers in health systems (health services and policy researchers, data scientists, social scientists, and others), and administrators working in CRiHSP will provide an exciting and dynamic place in which people of diverse backgrounds collaborate towards the common goal of achieving excellence in Health Systems Research. The team will further benefit from a significant expansion in related fields and collaborations with the Department of family Medicine at the National University Health System (NUHS), the new Centre for Sustainable Medicine (CoSM) and the Centre for Behavioural and Implementation Sciences Interventions (BISI) at the School of Medicine and the Saw Swee Hock School of Public Health.

Duties and Responsibilities

The Research Associate will have the following duties:

• Contribution to the management of research activities including grant and IRB/DSRB applications, budgeting, planning and monitoring project timelines and generally support project management and coordination and liasing with internal and external stakeholders
• Conduct literature reviews, including collation and synthesis of the literature
• Support the design and interpretation of quantitative surveys and qualitative interviews and focus groups and collected data
• Contribute to and lead (where appropriate) protocol, manuscript and report timely writing, editing and submission.
• Present work for feedback and dissemination at workshops or conferences locally and/or internationally

The post holder will be expected to be flexible in their role as the CRiHSP´s capacity evolves.

NUS offers highly competitive remuneration packages. The successful applicant will be offered an annual salary plus benefits commensurate with his or her qualifications, experience and expertise and may have access to travel support to disseminate research outcomes at international academic conferences.

The position is full-time for 1 year in the first instance, depending on project commitments and candidate’s career objectives.

Qualifications

Applicants will be evaluated based on the following selection criteria:

Qualifications

• Masters in Life Sciences, Health & Social Sciences

Experience

• Experience in planning, managing and implementing healthcare-related research projects using qualitative and/or quantitative data, from conception to completion, in a University setting (essential)
• Track record of publishing in international peer-reviewed journals (desirable)
• Researchers with existing research activities related to Value Based Health Care, patient reported outcomes or patient reported experiences of care are particularly encouraged to apply

Qualifications

Skills and Personal Attributes:

• Strong communication skills in English, both written and spoken (essential)
• Ability to work independently and as part of a multidisciplinary team (essential)
• Highly developed problem-solving skills and adept at managing complex problems (essential)
• Outcome-orientation with excellent organizational and project management skills, and attention to detail (essential)
• Ability to work with culturally diverse populations (essential)

Interested candidates should submit a detailed CV (personal particulars, academic and employment history, full list of publications, contacts details of three (3) referees) and cover letter outlining their motivation and suitability for the project addressing each of the criteria outlined above. Only shortlisted candidates will be notified. Applications will be considered on a rolling basis until a suitable candidate is found.

The application should include a CV and a cover letter that describes the applicant’s specific interest in joining the team. Only shortlisted candidates will be contacted.

Informal enquiries can be made to Prof Jose M Valderas at [email protected].

The National Quantum Federated Foundry (NQFF), hosted at the Institute of Materials Research and Engineering (IMRE), part of the Agency for Science, Technology, and Research (A*STAR), is looking for a research scientist who is experienced in RF electronics simulations and design. The successful candidate will be part of a team of research scientists and engineers working on devices and hardware for quantum technologies, including superconducting qubits, resonator systems, opto-electronic and photonics devices, control systems, and so on. The work in NQFF will support local and international efforts to develop and translate quantum technologies to realize exciting real-world applications.

The roles of the successful candidate will include:

• Design and simulation of electrical and opto-electronic devices for quantum technologies
• Assist the formulation of device fabrication and testing plans
• Operation and maintenance of simulation software and workstations
• Analysis and presentation of scientific results

Job requirements:

• PhD degree in physics, applied physics, electrical engineering, material science & engineering, or any other relevant disciplines.
• At least more than 10 years of relevant experience
• Experience in RF hardware/electronics simulations and design
• Familiarity with superconducting qubit design and cryogenic devices is highly desired
• Expertise in simulation software (COMSOL, HFSS, etc) and scripting/programming
• Ability to independently plan and execute research work
• Ability to communicate well and work closely with team members

The above eligibility criteria are not exhaustive. A*STAR may include additional selection criteria based on its prevailing recruitment policies. These policies may be amended from time to time without notice. We regret that only shortlisted candidates will be notified.

Role & Responsibilities:

• Responsibilities include diagnosing appropriate levels of metal/metal-alloy contaminations by oxygen and other contaminants; determining the root cause of contaminants, and establishing protocols for characterizations.
• Hands-on providing support for onsite metal PVD, including creating, running, and characterizing recipes to achieve the lowest resistances.
• Collaborates closely with equipment vendors and device engineers to optimize the metal-stack for device performances and robustness/reliability, from low to high temperatures.
• Lead data analysis related to implant-induced defects and cleaning issues on metal contacts with solutions development.
• Examines the work-functions of metal/metal-alloys suitable for Ohmic contact on SiC.
• Responsible for designing experiments for Ohmic contact on various SiC substrates with different doping types, determining their impact, and resolving issues to achieve the lowest specific contact resistances.
• Designing cleaning processes to obtain ideal Schottky diode using various metal/metal-alloys on SiC for high-performance applications.
• Work closely with cross-departmental and integration teams and in 3-5 years’ time develop a WBG backend process integration team of at least 4 persons.

Requirements:

• PhD Degree in Material Science, Physics, Electrical Engineering or related field.
• >8 years related industrial experience inclusing backend process module integration.
• Extensive hands-on experience in PVD (Physical Vapor Deposition) processing for metal depositions and interface tuning.
• Strong understanding of metal-semiconductor contact physics.
• Expertise in work-function tunings of metal and metal-alloy.
• Proficiency in modulating electron affinity through implantation or surface treatments of semiconductors.
• Familiarity with wide band-gap semiconductor materials and their interaction with metal/metal-alloys at various temperatures.
• Thorough fundamentals in Ohmic contact and Schottky diode physics, as well as the impact of defects and contaminations on electrical properties.
• Skilled at mentoring and transferring knowledge to junior staff members.
• Excellent communication skills to effectively address customers' needs, concerns, and solution requirements.

Scientist/Senior scientist will be part of heterogeneous integration group focused on development of the quantum packaging technology platforms to integrate qubit and control chip on superconductivity interposer.

He/she will work with cross functional team to:

• Design and simulation of superconducting circuits for salable quantum processor in 3D flip-chip architecture.
• Explore and develop superconducting nanowire base photo detector.
• Design and layout of circuits components of a superconducting qubit.
• Develop design rules and PDK for quantum packaging technologies.
• Provide quantum packaging solutions to meet the system requirements based on the simulation results.
  Prepare competitive grant research proposals and lead execution of these proposals.
  Engage industry partners to align and develop the building blocks required for next generations quantum packaging platforms.

Job Requirements:

• Master/PhD in quantum computing; Electrical and Computer Engineering; Material science area
• 4 to 5 years’ experience in superconducting circuits design and simulation for scalable quantum processor. Deep understanding on 3D quantum package
• Working experience on measuring loss and dielectric constants of materials at cryogenic temperatures
• Strong communication, industry awareness, and problem-solving skills.
• Highly motivated to succeed, a self-starter who is driven and able to work with others effectively to get things done.

ROLE:

IME A*Star is currently working on establishing a hybrid fabrication platform for 150mm & 200mm Silicon Carbide (SiC) power MOSFETs as part of the new SiC R&D program. The main objective of this program is to advance 200mm SiC technologies in various areas, such as epitaxy, device design, process integration for various types of power MOSFETs and power module packaging. The ultimate aim is to drive disruptive innovations in power device research, with a specific focus on >1.7KV power MOSFETs. These innovations will have significant applications in enhancing automotive technologies, vehicle electrification, safety measures, sustainable energy grids, data centers, and industrial & aerospace automation. Key aspects for this deputy lead for wide-bandgap device integration role include the development and integration of several modules, such as gate oxidation, implantation, implant activation, layout design verification, lithography, ohmic contact formation etc are essential. We are actively looking for individual with extensive industry experience in device physics and process integration to join our team. The candidate will contribute to process integration, device layout design, design verification, E-test and module process related data analysis, yield enhancement, and device physics.

RESPONSIBILITIES:

• To lead development of SiC power technologies, serving as both front and back-end process integration in collaboration with advanced module development team. And aim
to grow this team to ~10 headcounts in the next 3 years.

• Optimize and customize process flows for individual SiC products

• Identify and resolve process integration issues and related problems

• Develop specific or derivative processes to meet customer needs

• Support new designs by conducting module characterization and developing effective design rules

• Define and implement measures to enhance stability, yield, reliability, and reduce development costs & time

• Plan and implement sustainable corrective actions to address process deviations

• Continuously monitor and utilize expertise in process and equipment capabilities to achieve optimal device performance

• Determine the correct and effective way to deliver processes, functional devices, and other items to multiple customers

• Perform project management tasks and conduct data analysis

REQUIREMENTS:

• MS/PhD Degree in Electrical Engineering or related field

• >3 years industrial experience for MOSFET process integration and device Physics

• Highly proactive, self-motivated, and results-oriented professional with the ability to make efficient contributions to and lead technical discussions

• Extensive expertise in material and process integration

• Comprehensive understanding of semiconductor materials and MOSFET device physics

• Proficient in teaching and knowledge transfer to junior staff members

• Strong communication skills to effectively convey information about process module integration for device fabrication and with customers

• Excellent analytical skills for interpreting process and device data; combined with strong presentation abilities.

Scientist/Senior scientist will be part of heterogeneous integration group focused on development of the quantum packaging technology platforms to integrate qubit and control chip on superconductivity interposer.

He/she will work with cross functional team to:

• Design and simulation of superconducting circuits for salable quantum processor in 3D flip-chip architecture.
• Explore and develop superconducting nanowire base photo detector.
• Design and layout of circuits components of a superconducting qubit.
• Develop design rules and PDK for quantum packaging technologies.
• Provide quantum packaging solutions to meet the system requirements based on the simulation results.
  Prepare competitive grant research proposals and lead execution of these proposals.
  Engage industry partners to align and develop the building blocks required for next generations quantum packaging platforms.

Job Requirements:

• Master/PhD in quantum computing; Electrical and Computer Engineering; Material science area
• 4 to 5 years’ experience in superconducting circuits design and simulation for scalable quantum processor. Deep understanding on 3D quantum package
• Working experience on measuring loss and dielectric constants of materials at cryogenic temperatures
• Strong communication, industry awareness, and problem-solving skills.
• Highly motivated to succeed, a self-starter who is driven and able to work with others effectively to get things done.

ROLE:
A*STAR-IME is leading the way in establishing industry first 200mm open Silicon Carbide (SiC) R&D program. The program specific focus is on advancing 200mm SiC technologies in key areas such as epitaxy, gate stack, ion implantation, and dry etching, and integrating these modules to fabricate high-performance power devices. Our objective is to drive innovation in power device research, particularly in power MOSFETs rated above 1.2KV. Developing key innovative process is crucial for creating high-performance devices that will contribute to advancements in automotive technologies, vehicle electrification, safety measures, sustainable energy grids, data centers, and industrial & aerospace automation. This role involve growing leadership into ion implantation processes for p-body, channel, guard ring, source contact, and other components. We are currently seeking such individual with ~5 years of experience in ion implantation. The chosen candidate will be responsible for independently supervising ion implantation processes, conducting ion implant simulations, possessing knowledge of crystallography and ion interaction with atoms, having strong understanding of implanters and related thermal processing physics, beam optics, dosimetry systems, and vacuum technology. The ideal candidate should also be willing to collaborate with various departments, the technology development group, and customers. Furthermore, the candidate will contribute to the wide-bandgap team by sharing the ion implantation expertise on compound semiconductor materials and collaborate with other departments working with Si-based technology. The candidate will also be groomed to lead this diffusion process module group of ~6 headcounts into the future.

RESPONSIBILITIES:

• Diagnose malfunctions and using test equipment & software to test faulty tool; applying knowledge of the functional operation of the ion implant equipment

• Support on-site ion implanters in creating, running & characterizing recipes for recipe validation and develop process to achieve the desired dopant profile with excellent
damage recovery.

• Collaborate with vendors to optimize equipment performance and reduce tool downtime

• Analyze data related to implant-related defects formation with quantification and defects minimizations strategy

• Examine work-orders and communicates with equipment operators to resolve equipment problems & determine mechanical and human errors contributed to the issues

• Perform scheduled preventive maintenance tasks with tool operators, especially in checking, cleaning, repairing, detecting and preventing problems

• Responsible for designing experiments for ion implantation at various dose, energy, tilt, and twist levels

REQUIREMENTS:

• Ms/PhD Degree in Electrical Engineering or related field

• >3-5 years industrial experience for high power device design and modeling

• Extensive proficiency in medium to high energy/current ion implantation processes, including a comprehensive knowledge of implant equipment, equipment parts, and
troubleshooting techniques to minimize equipment downtime

• Good understanding of wide bandgap semiconductor materials and their corresponding dopant species

• Expertise in ion channeling, ion bombardment, and their impact on the implant species profile

• In-depth comprehension of defect formation and annihilation processes in the implanted region of semiconductors

• Familiarity with essential device properties resulting from ion implantation

• Adept at mentoring and transferring knowledge to junior staff members

Role & Responsibilities:

• Responsibilities include diagnosing appropriate levels of metal/metal-alloy contaminations by oxygen and other contaminants; determining the root cause of contaminants, and establishing protocols for characterizations.
• Hands-on providing support for onsite metal PVD, including creating, running, and characterizing recipes to achieve the lowest resistances.
• Collaborates closely with equipment vendors and device engineers to optimize the metal-stack for device performances and robustness/reliability, from low to high temperatures.
• Lead data analysis related to implant-induced defects and cleaning issues on metal contacts with solutions development.
• Examines the work-functions of metal/metal-alloys suitable for Ohmic contact on SiC.
• Responsible for designing experiments for Ohmic contact on various SiC substrates with different doping types, determining their impact, and resolving issues to achieve the lowest specific contact resistances.
• Designing cleaning processes to obtain ideal Schottky diode using various metal/metal-alloys on SiC for high-performance applications.
• Work closely with cross-departmental and integration teams and in 3-5 years’ time develop a WBG backend process integration team of at least 4 persons.

Requirements:

• PhD Degree in Material Science, Physics, Electrical Engineering or related field.
• >8 years related industrial experience inclusing backend process module integration.
• Extensive hands-on experience in PVD (Physical Vapor Deposition) processing for metal depositions and interface tuning.
• Strong understanding of metal-semiconductor contact physics.
• Expertise in work-function tunings of metal and metal-alloy.
• Proficiency in modulating electron affinity through implantation or surface treatments of semiconductors.
• Familiarity with wide band-gap semiconductor materials and their interaction with metal/metal-alloys at various temperatures.
• Thorough fundamentals in Ohmic contact and Schottky diode physics, as well as the impact of defects and contaminations on electrical properties.
• Skilled at mentoring and transferring knowledge to junior staff members.
• Excellent communication skills to effectively address customers' needs, concerns, and solution requirements.

Position:

Our team is starting an exciting project to develop RF/mm-wave ICs for the future of communication for Beyond-5G to 6G applications. We are looking for an exceptional candidate with relevant expertise to join us. Our team focuses on developing communication modules for both terrestrial and non-terrestrial needs. You will work at the Institute of Microelectronics (IME) to create the most advanced semiconductor technologies. You will collaborate with world-leading industries and academic institutions on innovative designs and strategic intellectual properties.

Job Responsibility:

• Benchmarking with datasheets, prior arts, and latest academic work.
• In-depth design and analysis with electrical/electromagnetic simulations.
• In-depth analysis of design robustness, optimization, and testability.
• In-depth presentations and report recording of design, layout, test and measurement, and fault analysis.
• Working independently, as a team, and with collaborators from industry and academic backgrounds.

Pre-requisites:

• A Master’s / PhD Degree in Electronics or Electrical Engineering and proven academic and industry experience are pluses.
• Experienced in designing RF/mmWave such as LNA, mixer, PA, buffer, transmission line, baluns, PLL, VCO, etc.
• Experienced in designing base-band/mixed-signal circuits, such as amplifiers, bandgap, ADC, DAC, etc., is a plus.
• Knowledgeable in design trade-offs at the circuit-level specification.
• Experienced in designing in CMOS and SiGe technology or any other technologies like RF-SOI and compound-semiconductor is a plus.
• Proficient in using Cadence and EM tools like ADS for EM circuit simulation, IC layout, LVS, and DRC verification.
• Familiarity with IC measurement and debugging and hands-on experience with RF/mmWave equipment such as spectrum analyzer, network analyzer, oscilloscope, and probe station.
• Good publication record with a strong awareness of state-of-the-art.
• Good communication and teamwork.

ROLE:
IME is leading the effort to establish the industry leading Silicon Carbide R&D program. This program aims to advance 200mm Silicon Carbide technologies in various areas, such as epitaxy, device design, process integration & fabrication, and power module packaging. The main objective is to drive disruptive innovations in power device research, with a specific focus on >1.2KV power MOSFETs. These innovations are intended to enhance automotive technologies, vehicle electrification, safety measures, sustainable energy grids, and industrial automation. Key aspects to demonstrate for this role include high power device design, novel device concepts, doping design, gate oxidation, and wide-bandgap process simulations. To achieve this, we are seeking individual with extensive industry experience in using Synopsys/Silvaco TCAD simulator, relevant device characterization skills, design simulation development abilities, a willingness to mentor junior staffs, and strong interpersonal skills. The candidate will contribute to the wide-bandgap & Silicon Carbide team by utilizing their device knowledge, guiding team on device characterization, implementing state-of-art Silicon Carbide power MOSFETs (Planar, Trench & Super-Junction), and innovative novel power MOSFETs for future applications.

RESPONSIBILITIES:

• TCAD modeling & simulation, novel high power device design, simulation, and device characterization

• Design and simulate high voltage Silicon Carbide MOSFETs (planar, trench, SJ MOSFET, IGBT) with a blocking voltage of >1.2K using Synopsys/Silvaco simulator

• Design & simulate practical and effective junction terminations

• Provide guidances on device structure, optimizing cell, power/performance analysis, process risk assessment, and recommendations for experimental split and improvement

• Develop and apply fundamental MOS device physics-based TCAD modelling & electric field management to calculate band structure, carrier transport, blocking voltage,
switching properties, and thermal management for vertical power devices in the presence of interface state density, gate oxide defects, and defects in Silicon Carbide

• Model transport and carrier scattering in devices operating in extreme ambient conditions

• Collaborate with diverse teams, including process integration, characterization, and circuit design engineers, to analyze and troubleshoot device-related issues during
development

• Serve as a resource for colleagues with less experience, and lead small projects with manageable risks and resource requirements

• Work closely with both internal and external customers to understand customer issues and align their demands. And grow this wide-bandgap team to ~5 headcounts in the
next 3 years.

JOB REQUIREMENTS:

• PhD in Electrical Engineering or related field

• >10 years industrial experience for high power device design and modeling

• Deep knowledge of high voltage, high power MOSFETs (including Planar, Trench, S-J MOSFETs, and IGBTs) design and device characterization on 4H-SiC & GaN substrates.

• Solid understanding of wide-bandgap semiconductor materials and the strong physics of MOSFET devices

• Ability to teach and transfer knowledge to junior staff members

• Ability to effectively communicate and plan with customers regarding their needs, issues, and demands

Job Description

The Engineer will be responsible for driving electro-mechanical product development in compliance with ISO 13485 standards across multiple levels, from component to product. The role includes planning and monitoring New Product Introduction (NPI) programs, managing engineering changes, and maintaining documentation, including Design History Files. The position requires close coordination with both internal and external suppliers, adhering to Quality Management System and regulatory standards.

Key Skills and Experience:

• Bachelor degree in Mechanical Engineering with 3+ years in electro-mechanical systems.
• Technical proficiency in optimizing designs for mechanical and electro-mechanical systems.
• Solid understanding of metal and plastic manufacturing processes for product design.
• Proficiency in 3D CAD software (e.g., SolidWorks), including GD&T and kinematic calculations.

Attributes:

• Analytical and detail-oriented, with a collaborative and hands-on approach.

The above eligibility criteria are not exhaustive. A*STAR may include additional selection criteria based on its prevailing recruitment policies. These policies may be amended from time to time without notice. We regret that only shortlisted candidates will be notified.

Position:

Our team is starting an exciting project to develop RF/mm-wave ICs for the future of communication for Beyond-5G to 6G applications. We are looking for an exceptional candidate with relevant expertise to join us. Our team focuses on developing communication modules for both terrestrial and non-terrestrial needs. You will work at the Institute of Microelectronics (IME) to create the most advanced semiconductor technologies. You will collaborate with world-leading industries and academic institutions on innovative designs and strategic intellectual properties.

Job Responsibility:

• Benchmarking with datasheets, prior arts, and latest academic work.
• In-depth design and analysis with electrical/electromagnetic simulations.
• In-depth analysis of design robustness, optimization, and testability.
• In-depth presentations and report recording of design, layout, test and measurement, and fault analysis.
• Working independently, as a team, and with collaborators from industry and academic backgrounds.

Pre-requisites:

• A Master’s / PhD Degree in Electronics or Electrical Engineering and proven academic and industry experience are pluses.
• Experienced in designing RF/mmWave such as LNA, mixer, PA, buffer, transmission line, baluns, PLL, VCO, etc.
• Experienced in designing base-band/mixed-signal circuits, such as amplifiers, bandgap, ADC, DAC, etc., is a plus.
• Knowledgeable in design trade-offs at the circuit-level specification.
• Experienced in designing in CMOS and SiGe technology or any other technologies like RF-SOI and compound-semiconductor is a plus.
• Proficient in using Cadence and EM tools like ADS for EM circuit simulation, IC layout, LVS, and DRC verification.
• Familiarity with IC measurement and debugging and hands-on experience with RF/mmWave equipment such as spectrum analyzer, network analyzer, oscilloscope, and probe station.
• Good publication record with a strong awareness of state-of-the-art.
• Good communication and teamwork.

ROLE:
IME is leading the effort to establish the industry leading Silicon Carbide R&D program. This program aims to advance 200mm Silicon Carbide technologies in various areas, such as epitaxy, device design, process integration & fabrication, and power module packaging. The main objective is to drive disruptive innovations in power device research, with a specific focus on >1.2KV power MOSFETs. These innovations are intended to enhance automotive technologies, vehicle electrification, safety measures, sustainable energy grids, and industrial automation. Key aspects to demonstrate for this role include high power device design, novel device concepts, doping design, gate oxidation, and wide-bandgap process simulations. To achieve this, we are seeking individual with extensive industry experience in using Synopsys/Silvaco TCAD simulator, relevant device characterization skills, design simulation development abilities, a willingness to mentor junior staffs, and strong interpersonal skills. The candidate will contribute to the wide-bandgap & Silicon Carbide team by utilizing their device knowledge, guiding team on device characterization, implementing state-of-art Silicon Carbide power MOSFETs (Planar, Trench & Super-Junction), and innovative novel power MOSFETs for future applications.

RESPONSIBILITIES:

• TCAD modeling & simulation, novel high power device design, simulation, and device characterization

• Design and simulate high voltage Silicon Carbide MOSFETs (planar, trench, SJ MOSFET, IGBT) with a blocking voltage of >1.2K using Synopsys/Silvaco simulator

• Design & simulate practical and effective junction terminations

• Provide guidances on device structure, optimizing cell, power/performance analysis, process risk assessment, and recommendations for experimental split and improvement

• Develop and apply fundamental MOS device physics-based TCAD modelling & electric field management to calculate band structure, carrier transport, blocking voltage,
switching properties, and thermal management for vertical power devices in the presence of interface state density, gate oxide defects, and defects in Silicon Carbide

• Model transport and carrier scattering in devices operating in extreme ambient conditions

• Collaborate with diverse teams, including process integration, characterization, and circuit design engineers, to analyze and troubleshoot device-related issues during
development

• Serve as a resource for colleagues with less experience, and lead small projects with manageable risks and resource requirements

• Work closely with both internal and external customers to understand customer issues and align their demands. And grow this wide-bandgap team to ~5 headcounts in the
next 3 years.

JOB REQUIREMENTS:

• PhD in Electrical Engineering or related field

• >10 years industrial experience for high power device design and modeling

• Deep knowledge of high voltage, high power MOSFETs (including Planar, Trench, S-J MOSFETs, and IGBTs) design and device characterization on 4H-SiC & GaN substrates.

• Solid understanding of wide-bandgap semiconductor materials and the strong physics of MOSFET devices

• Ability to teach and transfer knowledge to junior staff members

• Ability to effectively communicate and plan with customers regarding their needs, issues, and demands

As part of IME Integrated Circuit Design and System Department, we are seeking a candidate with relevant experience in analog integrated circuit design. This candidate will have the opportunity to develop unconventional ultrasound transducer drivers, receiver circuits for IoT and biomedical applications as well as cutting-edge high-speed analog circuits for advanced optical communication.

Role & Responsibilities

• Design and tapeout circuit blocks e.g. high linearity low-noise amplifier, variable gain amplifier, envelop detector, and high voltage driver for MEMS ultrasound transducers.
• Work together with team on system integration and demonstration.
• Work together with team to investigate novel circuit/system solutions to create new inventions.

Requirements

• Master’s / PhD degree in Electrical Engineering or equivalent
• Minimum 2 years of transistor-level analog circuit design experience
• Good understanding of CMOS analog IC design methodologies and successful tapeout experience
• Familiar with analog IC design and verification flow
• Design experience with high voltage BCD process would be a plus
• Familiar with the IC test equipment such as oscilloscope, spectrum analyzer, etc.
• Able to generate high-quality scientific publications and patents
• Team player, quick learner and self-driven

Job Description:

• Develop epitaxial processes for selective and non-selective growth of Ge and SiGe layers on Si substrates.
• Improve baseline processes for high-quality SiGe and Ge epitaxy: control uniformity and thickness and minimize threading dislocation density.
• Design epitaxial structures and develop processes for Ge and SiGe photodetectors (PD) and electro-absorption modulators (EAM) devices, integrating Ge/SiGe devices into Silicon photonic circuits.
• Troubleshoot to maintain tool and process quality. Prepare Standard Operating Procedures (SOPs), Out-of-Control Plans, and other technical documentation to maintain processes and tools.
• Perform metrology and characterization of SiGe and Ge epilayers (e.g., dopant and thickness uniformity, surface roughness, crystal quality, stress, carrier lifetime, etc.).
• Correlate SiGe and Ge crystal defects (type and density) with device performance and yield, and with device processing conditions.
• Provide technical support for technology transfer and process release requirements.
• Prepare technical presentations and papers for meetings, conferences and journals.

Requirements:

• PhD degree in Materials Science and Engineering, Physics, Chemical Engineering, Chemistry, Microelectronics Engineering, or closely related fields are welcome to apply.
• Prior 3 to 5 years direct experience in SiGe/Ge epitaxy and materials characterization.
• Working knowledge and prior hands-on experience in Design of Experiments (DOE) methodologies, statistical root cause analysis, and problem-solving methods, is desired.
• Understanding of epitaxial system hardware is advantageous.
• Knowledge and prior hands-on experience on basic process characterization techniques such as SEM/TEM, EDX, SIMS, AFM, Ellipsometry is advantageous.
• Possess good interpersonal and oral/written communication skills, with ability to deliver clear and concise messages to both internal and external stakeholders.

Job Description:

• Develop epitaxial processes for selective and non-selective growth of Ge and SiGe layers on Si substrates.
• Improve baseline processes for high-quality SiGe and Ge epitaxy: control uniformity and thickness and minimize threading dislocation density.
• Design epitaxial structures and develop processes for Ge and SiGe photodetectors (PD) and electro-absorption modulators (EAM) devices, integrating Ge/SiGe devices into Silicon photonic circuits.
• Troubleshoot to maintain tool and process quality. Prepare Standard Operating Procedures (SOPs), Out-of-Control Plans, and other technical documentation to maintain processes and tools.
• Perform metrology and characterization of SiGe and Ge epilayers (e.g., dopant and thickness uniformity, surface roughness, crystal quality, stress, carrier lifetime, etc.).
• Correlate SiGe and Ge crystal defects (type and density) with device performance and yield, and with device processing conditions.
• Provide technical support for technology transfer and process release requirements.
• Prepare technical presentations and papers for meetings, conferences and journals.

Requirements:

• PhD degree in Materials Science and Engineering, Physics, Chemical Engineering, Chemistry, Microelectronics Engineering, or closely related fields are welcome to apply.
• Prior 3 to 5 years direct experience in SiGe/Ge epitaxy and materials characterization.
• Working knowledge and prior hands-on experience in Design of Experiments (DOE) methodologies, statistical root cause analysis, and problem-solving methods, is desired.
• Understanding of epitaxial system hardware is advantageous.
• Knowledge and prior hands-on experience on basic process characterization techniques such as SEM/TEM, EDX, SIMS, AFM, Ellipsometry is advantageous.
• Possess good interpersonal and oral/written communication skills, with ability to deliver clear and concise messages to both internal and external stakeholders.

ROLE:

IME A*Star is currently working on establishing a hybrid fabrication platform for 150mm & 200mm Silicon Carbide (SiC) power MOSFETs as part of the new SiC R&D program. The main objective of this program is to advance 200mm SiC technologies in various areas, such as epitaxy, device design, process integration for various types of power MOSFETs and power module packaging. The ultimate aim is to drive disruptive innovations in power device research, with a specific focus on >1.7KV power MOSFETs. These innovations will have significant applications in enhancing automotive technologies, vehicle electrification, safety measures, sustainable energy grids, data centers, and industrial & aerospace automation. Key aspects for this deputy lead for wide-bandgap device integration role include the development and integration of several modules, such as gate oxidation, implantation, implant activation, layout design verification, lithography, ohmic contact formation etc are essential. We are actively looking for individual with extensive industry experience in device physics and process integration to join our team. The candidate will contribute to process integration, device layout design, design verification, E-test and module process related data analysis, yield enhancement, and device physics.

RESPONSIBILITIES:

• To lead development of SiC power technologies, serving as both front and back-end process integration in collaboration with advanced module development team. And aim
to grow this team to ~10 headcounts in the next 3 years.

• Optimize and customize process flows for individual SiC products

• Identify and resolve process integration issues and related problems

• Develop specific or derivative processes to meet customer needs

• Support new designs by conducting module characterization and developing effective design rules

• Define and implement measures to enhance stability, yield, reliability, and reduce development costs & time

• Plan and implement sustainable corrective actions to address process deviations

• Continuously monitor and utilize expertise in process and equipment capabilities to achieve optimal device performance

• Determine the correct and effective way to deliver processes, functional devices, and other items to multiple customers

• Perform project management tasks and conduct data analysis

REQUIREMENTS:

• MS/PhD Degree in Electrical Engineering or related field

• >3 years industrial experience for MOSFET process integration and device Physics

• Highly proactive, self-motivated, and results-oriented professional with the ability to make efficient contributions to and lead technical discussions

• Extensive expertise in material and process integration

• Comprehensive understanding of semiconductor materials and MOSFET device physics

• Proficient in teaching and knowledge transfer to junior staff members

• Strong communication skills to effectively convey information about process module integration for device fabrication and with customers

• Excellent analytical skills for interpreting process and device data; combined with strong presentation abilities.

We are looking for a Research Scientist / Senior Research Scientist to work on a project on developing all-optical neuromorphic computing system. This project is looking to develop on-demand light-matter interaction technology with atomically-thin materials for waveguide optical signal control. The successful candidate will be expected to work under the guidance of the principal investigator and publish in high-quality peer-reviewed scientific journals.

The selected candidate will have access to excellent scientific resources and opportunities for future career development (e.g. presentations at conferences, opportunities for grant applications, advanced training courses, etc.).

Job Requirements:

• PhD degree in Nanophotonics, Applied Physics, Optics, Materials Science or a related field.
• Experience in simulation, design, and characterization of nanophotonic/optical device.
• Experience in the exfoliation, transfer, and characterization of vdw materials.
• Knowledgeable in nanofabrication process for optoelectronic devices.
• Prior experience in optical system design, assembly and alignment will be an advantage.
• Demonstrated ability in developing high-quality, peer-reviewed scientific journal publications

The above eligibility criteria are not exhaustive. A*STAR may include additional selection criteria based on its prevailing recruitment policies. These policies may be amended from time to time without notice. We regret that only shortlisted candidates will be notified.

We are looking for a Research Scientist / Senior Research Scientist to work on a project on developing all-optical neuromorphic computing system. This project is looking to develop on-demand light-matter interaction technology with atomically-thin materials for waveguide optical signal control. The successful candidate will be expected to work under the guidance of the principal investigator and publish in high-quality peer-reviewed scientific journals.

The selected candidate will have access to excellent scientific resources and opportunities for future career development (e.g. presentations at conferences, opportunities for grant applications, advanced training courses, etc.).

Job Requirements:

• PhD degree in Nanophotonics, Applied Physics, Optics, Materials Science or a related field with at least 5 years' of relevant experience.
• Experience in simulation, design, and characterization of nanophotonic/optical device.
• Experience in the exfoliation, transfer, and characterization of vdw materials.
• Knowledgeable in nanofabrication process for optoelectronic devices.
• Prior experience in optical system design, assembly and alignment will be an advantage.
• Demonstrated ability in developing high-quality, peer-reviewed scientific journal publications

The above eligibility criteria are not exhaustive. A*STAR may include additional selection criteria based on its prevailing recruitment policies. These policies may be amended from time to time without notice. We regret that only shortlisted candidates will be notified.

Job Description:

• Be a member of the leadership team to achieve the vision and mission of the National GaN Technology Centre (NGTC).
• Lead the Technology, Engineering and Industry team in technology road mapping and R&D pathfinding in device architecture, fabrication process technology, and MMIC design.
• Lead the Technology team, which comprises (a) characterization & modelling, (b) MMIC design, testing & model validation, (c) device failure and reliability analysis, (d) ultra high frequency GaN-on-SiC device design, layout, fabrication and characterization, and (e) low voltage GaN-on-Silicon device design, layout, fabrication and characterization.
• Coordinate with the Engineering team to develop ultra high frequency devices, ultra low voltage devices, and their MMICs.
• Coordinate with the Engineering and Operations teams to ensure timely delivery of the projects.
• Initiate and secure research grants and industry funding.
• Initiate, coordinate and manage research collaborations with IHLs and industry partners.
• Provide regular progress report of the Technology team’s activities to NGTC management.
• Represent NGTC in customer meetings.

Requirements:

• PhD in Electrical & Electronic Engineering, Materials Science and Engineering, Microelectronics Engineering, or closely related fields are welcome to apply.
• Deep understanding of GaN-HEMT device physics and GaN-based MMICs.
• At least 15-20 years of post-PhD hands-on experience in GaN HEMT and MMIC technology development including design, characterization (e.g. DC, small-signal and load-pull measurement), and modelling; preferably in RF GaN-on-Silicon or GaN-on-SiC technologies.
• At least 8 years of experience in leading a team of research engineers/scientists in managing multiple projects.
• Candidates with industry experience in GaN related R&D would be preferred.
• Working knowledge and hands-on experience in Design of Experiments (DOE) methodologies, statistical root cause analysis, problem-solving methods, and in-line metrology techniques is desired.
• Possess strong leadership, project management, interpersonal and oral/written communication skills.

The above eligibility criteria are not exhaustive. A*STAR may include additional selection criteria based on its prevailing recruitment policies. These policies may be amended from time to time without notice. We regret that only shortlisted candidates will be notified.

FOR HR (50%)

Assisting HR Lead in the following HR duties:

· Recruitment and onboarding: Coordinates recruitment & selection process, including induction activities. Handle all work passes related application in WP Online and EP Online

· Leave and Payroll Management

· Compensation and Benefits: Administration of workers movements such as resignations, transfers, promotion, benefits and overseas travel claims. Handle employees' medical insurance, workmen injury compensation & group hospitalization

· Ensures planning, monitoring, and appraisal of employee work results by training managers to coach and discipline employees; hearing and resolving employee grievances; counseling employees and supervisors

· Organize company events, staff communication and HR improvement projects

· Prepare monthly reports and HR statistics and Expatriate management

· Other ad-hoc HR duties as assigned

FOR SALES ADMIN (50%)

· Raise sales order & do invoicing/prepare proforma invoice

· Sales Order Follow-up: Track open sales orders, and communicate with clients regarding order status, delivery timelines, and any changes or issues.

· Product sample Coordination: Handle the dispatch of samples and follow up on feedback.

· Shipment Coordination: Communicate with logistics and freight forwarders to ensure timely delivery of orders and documents

· Others sale admin tasks assigned by Team Lead

Requirement:

· Diploma in Business Administration/Admin/Accountancy

· Minimum 1-2 years experience in HR/Sale admin

· A team player who is self-motivated

Interested applicants are invited to apply directly at the NUS Career Portal

Your application will be processed only if you apply via NUS Career Portal

We regret that only shortlisted candidates will be notified.

Energy Studies Institute

The Energy Studies Institute (ESI) is a research institute at the National University of Singapore seeking to advance the understanding of energy policy issues by conducting independent research and analysis. We are looking for researchers to join a multi-disciplinary team carrying out research projects on a range of energy issues that are of concern to Singapore and the region.

Job Description

• Conduct advanced research on energy and environmental systems to support policy-making for Singapore's decarbonization pathways.
• Participate in engagements with stakeholders and external research groups; supervise research students involved in the study.
• Produce policy reports, documentation and publish articles in reputable academic journals.
• Cultivate networks, initiate collaborations, and prepare funding proposals to support ongoing research.
• Perform administrative duties, including organizing seminars, workshops, and conferences, along with other responsibilities as assigned by the Head of Division or Principal Investigator.

Requirements

• Possess a master’s degree in energy systems modelling, energy and climate economics, or related quantitative research fields.
• At least two years of relevant research experience in areas including: national-level energy systems model (e.g. MARKAL-TIMES, GCAM, CGE), sector-specific energy system model (e.g. power, transportation, industry), techno-economic evaluation for energy and decarbonization technologies, or energy and environmental analysis (e.g. decomposition analysis, input-output analysis, life cycle analysis).
• A good understanding and interest in energy and environmental issues, such as energy supply, demand, trade, efficiency, energy and environment relations, and climate change.
• Experience in energy system model integration is a plus.
• Relevant working and practical experience in industry or government agencies in energy and environment in Singapore would be highly valuable.
• Track record of publications in reputable energy, environmental and/or systems modelling-related journals would be an advantage.
• Able to work independently and collaborate with team members.

Application Process

To apply for this position, please combine the following documents in 1 PDF and attach it under the CV column when submitting your application:

• Curriculum vitae
• A cover letter, of no more than 800 words, explaining the applicant’s past research experience and aptitude in relation to the research project

Interested candidates, please submit your application with all the required documents. Only shortlisted applicants will be notified. Shortlisted applicants may be called for interview, either in person or by zoom, as appropriate. If you have not heard from us within 3 months, you should assume that your application has not been successful.

As a University of Applied Learning, SIT works closely with industry in our research pursuits. Our research staff will have the opportunity to be equipped with applied research skill sets that are relevant to industry demands while working on research projects in SIT.

The primary responsibility of this role is to deliver on a Pharmaceutical Innovation Programme Singapore research project where you will be part of a collaborative team exploring innovative ways of understanding extrusion processing for pharmaceutical drug materials and products using rheological measurements.

Key Responsibilities

In this role, you will characterize mixtures of pharmaceutical excipients and drug materials to develop methodologies for screening hot-melt extrusion formulations and selecting optimal operating conditions using rheology, with the objective of producing amorphous-solid-dispersions. You will validate the developed processing space and operating conditions for extruded pharmaceutical formulations using a lab-scale extruder. In collaboration with researchers at the Singapore-MIT Alliance for Research and Technology (SMART), you will characterize the physical properties and performance of intermediate pharmaceutical drug products. The created methods will be transferred to the industrial partner to enhance their product development process using rheological characterization.

More specific responsibilities include:

• Participate in and manage the research project with Principal Investigator (PI), and the research team members to ensure all project deliverables are met.
• Undertake characterization of pharmaceutical active ingredients, polymeric excipients, and plasticizers for producing amorphous-solid-dispersions.
• Perform lab-scale hot-melt extrusion of pharmaceutical materials to validate predicted processing conditions and product outcomes.
• Collaborate with broader pharmaceutical research team at SMART.
• Design, execute, and interpret experiments independently.
• Author papers in high-quality journals in areas that are related to the research.
• Prepare and deliver reports and presentations for industrial partners
• Carry out Risk Assessment, and ensure compliance with Work, Safety and Health Regulations.
• Coordinate procurement and liaise with vendors/suppliers.
• Work independently, as well as within a team.

Job Requirements

• Have deep hands-on experience with at least one of the areas of polymer rheology, extrusion processing, pharmaceutical engineering with small molecules.
• Relevant competence in the areas of wet lab work, analytical instrumentation, material science and formulation
• Have an advanced degree in chemical engineering, mechanical engineering, materials science and engineering, or a related field.
• Knowledge of any of the following will be advantageous: rheology, physical characterisation, crystallisation, polymer melts, extrusion, material physics.

Key Competencies

• Able to build and maintain strong working relationships with people within and external to the university.
• Self-directed learner who believes in continuous learning and development.
• Proficient in communicating via technical writing and presentations.
• Possess strong analytical and critical thinking skills.
• Show strong initiative and take ownership of work.