Description
As a NAND CMOS Process Integration Engineer in the Singapore Technology Development department at Micron Technology Inc., you will be responsible for developing 3D NAND CMOS devices scaling and enhancing their performance, reliability and manufacturability.
Responsibilities:
- Develop and innovate critical CMOS modules. Drive multi-functional teams to optimize existing process flows and develop new innovative solutions to meet product requirements and manufacturability.
- Develop/re-define critical specifications criteria for optimum product performance and drive activities to get them to manufacturing process capability.
- Extract and analyze inline, probe, parametric, reliability, and other critical metrics and predict future behavior of the CMOS device performance of the product to enable early innovative solutions to meet product and device specifications.
- Early introduction, characterization and validation of new CMOS device models and test structures for developing future NAND products.
- 3 dimensions analysis with the use of K2 view to extract layout information and combine with the doping profiles of each implant step for product development and integration solutions.
- Interact and collaborate with TCAD, modeling, and layout teams to drive clearer definition of CMOS device and reliability improvements across multiple tech-nodes and designs.
- Coordinate activities at manufacturing site towards gating experiment funding, conversions, and effectively communicate decisions made to all R&D, manufacturing, and relevant partners.
- Take on leadership role at quarterly yield summits and monthly program reviews in summarizing complex problems, deriving and explaining actions taken to address them and getting R&D, manufacturing, and senior management teams on the same page.
- Assist in the transfer of a new technology from R&D to manufacturing and contribute towards ensuring successful ramp and qualification. Supporting the transfer, documentation and training of module fundamentals into manufacturing.
Requirements:
- MS or PhD in Electrical Engineering preferably specialized in Microelectronics and Semiconductor Device Physics. Prior technology development and tech transfer/manufacturing experiences are preferred.
- Fresh MS/PhD candidates with knowledge of semiconductor process Integration, device physics and CMOS engineering.
- Direct fab experience with nonvolatile memories manufacturing, knowledge of TCAD, K2 view layout, and NAND product are highly desirable.
- Ability to develop a strong, holistic, end-to-end understanding of CMOS device and its related module on NAND technologies, related structural and electrical fail mechanisms.
- Deep understanding of probe failure mechanism, ability to do electrical bench data collection.
- Self-motivated, self-governing with proven ability to work in a demanding and dynamic environment.
- Experienced in coordinating cross-functional teams to achieve a goal.
- Solid data analysis, communication and reporting abilities with demonstrated presentation abilities.
- Curiosity and natural tendency of learning new things independently.
- Ability to travel for extended periods of time to the US for collaborative R&D work.
