Total 39 research nurse job vacancies in Art / Design / Entertainment category in Singapore

Job Description & Requirement

The Integrated Circuit Design and System Department at IME is on the lookout for a skilled and innovative engineer to develop groundbreaking cryogenic analog/mixed-signal and RF circuits for quantum computing applications. In this role, you’ll collaborate with a dynamic team of IC designers and physicists, working on state-of-the-art prototypes that will revolutionize qubit technologies through high-fidelity control and read-out. Join us and be part of the next wave of quantum breakthroughs! Key

Responsibilities:

• Design and tape out advanced circuit blocks including low-noise amplifiers, variable gain amplifiers, ADCs, DACs, and mixers.
• Model and test circuits at cryogenic temperatures to ensure peak performance in quantum computing environments.
• Collaborate with a multidisciplinary team on system integration and technology demonstrations.
• Explore and develop innovative circuit and system solutions, contributing to cutting-edge inventions.
• Qualifications:
• PhD in Electrical Engineering or a related field.
• 4+ years of hands-on experience in transistor-level analog circuit design.
• Strong expertise in CMOS analog IC design methodologies, with a successful track record in tapeouts.
• Familiarity with the full analog IC design and verification flow.
• Proficiency in using IC testing equipment such as oscilloscopes, spectrum analyzers, etc.
• Ability to produce high-quality scientific publications and patents.
• A motivated team player who thrives on learning and innovation.

Roles and Responsibilities:

• TCAD modeling, simulation, and innovative design of high power electronics devices, as well as device characterization.
• Develop and simulate high power SiC MOSFETs (planar, trench, Super-Junction MOSFET, IGBT) with a blocking voltage exceeding 1.2K using the industry-standard Synopsys/Silvaco simulator.
• Create and simulate practical & efficient junction terminations.
• Model transport and carrier scattering in devices operating under extreme ambient conditions.
• Serve as a valuable resource for colleagues with lesser TCAD power electronics experience and take lead in group projects with managing risks & resource requirements.
• Foster close collaborations with both internal and external customers to fully understand customer issues and requirements.

Job Requirements:

• PhD Degree in Electrical Engineering or related field.
• >2-3 years industrial experience for high power devices design and modeling.
• Thorough understanding of different types of high-voltage, high-power MOSFETs including Planar, Trench, Super-Junction MOSFETs, and IGBTs, with a focus on design and device characterizations.
• Hands-on skill in designing MOSFET/diode layouts.
• Excellent communication skills to effectively engage with customers, address their needs, resolve issues, and meet demands.

Roles and Responsibilities:

• TCAD modeling, simulation, and innovative design of high power electronics devices, as well as device characterization.
• Develop and simulate high power SiC MOSFETs (planar, trench, Super-Junction MOSFET, IGBT) with a blocking voltage exceeding 1.2K using the industry-standard Synopsys/Silvaco simulator.
• Create and simulate practical & efficient junction terminations.
• Model transport and carrier scattering in devices operating under extreme ambient conditions.
• Serve as a valuable resource for colleagues with lesser TCAD power electronics experience and take lead in group projects with managing risks & resource requirements.
• Foster close collaborations with both internal and external customers to fully understand customer issues and requirements.

Job Requirements:

• PhD Degree in Electrical Engineering or related field.
• >2-3 years industrial experience for high power devices design and modeling.
• Thorough understanding of different types of high-voltage, high-power MOSFETs including Planar, Trench, Super-Junction MOSFETs, and IGBTs, with a focus on design and device characterizations.
• Hands-on skill in designing MOSFET/diode layouts.
• Excellent communication skills to effectively engage with customers, address their needs, resolve issues, and meet demands.

As part of IME Integrated Circuit Design and System Department, we are looking for a candidate with relevant experience in ultrasound imaging system design. This candidate will define an ultrasound transducer array beamformer IC architecture for imaging applications. The candidate will work closely with MEMS team on system architecture, circuit design, simulation, validation, and integration.

Role & Responsibilities

• Perform system-level beamformer architecture, design, and simulation, to derive circuit-level design specifications.
• Beamforming array optimization using AI algorithms.
• Design and implementation of beamformer algorithm in hardware.
• Work together with team to investigate novel circuit/system solutions to create new inventions.

Requirements

• Master’s / PhD degree in Electrical Engineering or equivalent
• Good understanding of ultrasound imaging systems and beamforming theories.
• Knowledge of AI algorithms and implementation will be a plus
• Familiar with IC test equipment such as oscilloscope, spectrum analyzer, etc.
• Able to generate high-quality scientific publications and patents
• Team player, quick learner and self-driven

ROLE:
IME is leading the effort to establish the industry leading Silicon Carbide R&D program. This program aims to advance 200mm Silicon Carbide technologies in various areas, such as epitaxy, device design, process integration & fabrication, and power module packaging. The main objective is to drive disruptive innovations in power device research, with a specific focus on >1.2KV power MOSFETs. These innovations are intended to enhance automotive technologies, vehicle electrification, safety measures, sustainable energy grids, and industrial automation. Key aspects to demonstrate for this role include high power device design, novel device concepts, doping design, gate oxidation, and wide-bandgap process simulations. To achieve this, we are seeking individual with extensive industry experience in using Synopsys/Silvaco TCAD simulator, relevant device characterization skills, design simulation development abilities, a willingness to mentor junior staffs, and strong interpersonal skills. The candidate will contribute to the wide-bandgap & Silicon Carbide team by utilizing their device knowledge, guiding team on device characterization, implementing state-of-art Silicon Carbide power MOSFETs (Planar, Trench & Super-Junction), and innovative novel power MOSFETs for future applications.

RESPONSIBILITIES:

• TCAD modeling & simulation, novel high power device design, simulation, and device characterization

• Design and simulate high voltage Silicon Carbide MOSFETs (planar, trench, SJ MOSFET, IGBT) with a blocking voltage of >1.2K using Synopsys/Silvaco simulator

• Design & simulate practical and effective junction terminations

• Provide guidances on device structure, optimizing cell, power/performance analysis, process risk assessment, and recommendations for experimental split and improvement

• Develop and apply fundamental MOS device physics-based TCAD modelling & electric field management to calculate band structure, carrier transport, blocking voltage,
switching properties, and thermal management for vertical power devices in the presence of interface state density, gate oxide defects, and defects in Silicon Carbide

• Model transport and carrier scattering in devices operating in extreme ambient conditions

• Collaborate with diverse teams, including process integration, characterization, and circuit design engineers, to analyze and troubleshoot device-related issues during
development

• Serve as a resource for colleagues with less experience, and lead small projects with manageable risks and resource requirements

• Work closely with both internal and external customers to understand customer issues and align their demands. And grow this wide-bandgap team to ~5 headcounts in the
next 3 years.

JOB REQUIREMENTS:

• PhD in Electrical Engineering or related field

• >10 years industrial experience for high power device design and modeling

• Deep knowledge of high voltage, high power MOSFETs (including Planar, Trench, S-J MOSFETs, and IGBTs) design and device characterization on 4H-SiC & GaN substrates.

• Solid understanding of wide-bandgap semiconductor materials and the strong physics of MOSFET devices

• Ability to teach and transfer knowledge to junior staff members

• Ability to effectively communicate and plan with customers regarding their needs, issues, and demands

ROLE:
IME is leading the effort to establish the industry leading Silicon Carbide R&D program. This program aims to advance 200mm Silicon Carbide technologies in various areas, such as epitaxy, device design, process integration & fabrication, and power module packaging. The main objective is to drive disruptive innovations in power device research, with a specific focus on >1.2KV power MOSFETs. These innovations are intended to enhance automotive technologies, vehicle electrification, safety measures, sustainable energy grids, and industrial automation. Key aspects to demonstrate for this role include high power device design, novel device concepts, doping design, gate oxidation, and wide-bandgap process simulations. To achieve this, we are seeking individual with extensive industry experience in using Synopsys/Silvaco TCAD simulator, relevant device characterization skills, design simulation development abilities, a willingness to mentor junior staffs, and strong interpersonal skills. The candidate will contribute to the wide-bandgap & Silicon Carbide team by utilizing their device knowledge, guiding team on device characterization, implementing state-of-art Silicon Carbide power MOSFETs (Planar, Trench & Super-Junction), and innovative novel power MOSFETs for future applications.

RESPONSIBILITIES:

• TCAD modeling & simulation, novel high power device design, simulation, and device characterization

• Design and simulate high voltage Silicon Carbide MOSFETs (planar, trench, SJ MOSFET, IGBT) with a blocking voltage of >1.2K using Synopsys/Silvaco simulator

• Design & simulate practical and effective junction terminations

• Provide guidances on device structure, optimizing cell, power/performance analysis, process risk assessment, and recommendations for experimental split and improvement

• Develop and apply fundamental MOS device physics-based TCAD modelling & electric field management to calculate band structure, carrier transport, blocking voltage,
switching properties, and thermal management for vertical power devices in the presence of interface state density, gate oxide defects, and defects in Silicon Carbide

• Model transport and carrier scattering in devices operating in extreme ambient conditions

• Collaborate with diverse teams, including process integration, characterization, and circuit design engineers, to analyze and troubleshoot device-related issues during
development

• Serve as a resource for colleagues with less experience, and lead small projects with manageable risks and resource requirements

• Work closely with both internal and external customers to understand customer issues and align their demands. And grow this wide-bandgap team to ~5 headcounts in the
next 3 years.

JOB REQUIREMENTS:

• PhD in Electrical Engineering or related field

• >10 years industrial experience for high power device design and modeling

• Deep knowledge of high voltage, high power MOSFETs (including Planar, Trench, S-J MOSFETs, and IGBTs) design and device characterization on 4H-SiC & GaN substrates.

• Solid understanding of wide-bandgap semiconductor materials and the strong physics of MOSFET devices

• Ability to teach and transfer knowledge to junior staff members

• Ability to effectively communicate and plan with customers regarding their needs, issues, and demands

The National Quantum Federated Foundry (NQFF), hosted at the Institute of Materials Research and Engineering (IMRE), part of the Agency for Science, Technology, and Research (A*STAR), is looking for a research scientist who is experienced in RF electronics simulations and design. The successful candidate will be part of a team of research scientists and engineers working on devices and hardware for quantum technologies, including superconducting qubits, resonator systems, opto-electronic and photonics devices, control systems, and so on. The work in NQFF will support local and international efforts to develop and translate quantum technologies to realize exciting real-world applications.

The roles of the successful candidate will include:

• Design and simulation of electrical and opto-electronic devices for quantum technologies
• Assist the formulation of device fabrication and testing plans
• Operation and maintenance of simulation software and workstations
• Analysis and presentation of scientific results

Job requirements:

• PhD degree in physics, applied physics, electrical engineering, material science & engineering, or any other relevant disciplines.
• At least more than 10 years of relevant experience
• Experience in RF hardware/electronics simulations and design
• Familiarity with superconducting qubit design and cryogenic devices is highly desired
• Expertise in simulation software (COMSOL, HFSS, etc) and scripting/programming
• Ability to independently plan and execute research work
• Ability to communicate well and work closely with team members

The above eligibility criteria are not exhaustive. A*STAR may include additional selection criteria based on its prevailing recruitment policies. These policies may be amended from time to time without notice. We regret that only shortlisted candidates will be notified.

The Bioinformatics Institute (BII), Agency for Science, Technology and Research (A*STR) is seeking applications for an outstanding scientist in the field of quantum computing.

The Bioinformatics Institute (BII) is a computational biology research and postgraduate training institute as well as a national resource centre in bioinformatics within the Biomedical Research Council (BMRC) of A*STAR. Our scientists aim to understand the biomolecular mechanisms that underlie biomedical phenomena by developing sophisticated computational methods to support discovery from a secure and sustainable data hub to cross-disciplinary AI/ML analysis and data integration. We analyse a wide spectrum of biological and clinical data, including omics data (biomolecular sequences, expression profiles, epigenetics data), 3D structures of macromolecules, and biological tissue and macroscopic images from local and international academic, hospital and industry collaborators, public resources and also from in-house efforts. The institute has a vibrant and diverse research portfolio that includes infectious diseases, computational toxicology, precision medicine, oncology and drug discovery.

Job scope and responsibilities:

· Lead efforts in using quantum computing to analyze biomolecular and biomedical data (e.g. protein-ligand interactions, molecular docking, protein/RNA folding, molecular dynamics simulations, imaging, spatial ohmics) and couple it with methods such as quantum machine learning, quantum monte carlo etc, contributing to the development of a broader initiative encompassing AI in drug discovery.

· Collaborate closely with scientists within the Bioinformatics Institute, within A*STAR and within the local ecosystem.

· Lead or participate in research grant proposals.

Requirements:

· Minimum PhD in a related field.

· 5 years or more of postdoctoral experience in quantum computing, demonstrating outstanding research outcomes and strong publication records.

· The candidate must have experience in quantum computing software development/applications, especially with NISQ machines.

· Excellent communication (oral and written) and public speaking skills.

· Strong records of strategic thinking ability.

The above eligibility criteria are not exhaustive. A*STAR may include additional selection criteria based on its prevailing recruitment policies. These policies may be amended from time to time without notice. We regret that only shortlisted candidates will be notified.

The Bioinformatics Institute (BII), Agency for Science, Technology and Research (A*STR) is seeking applications for an outstanding scientist in the field of quantum computing.

The Bioinformatics Institute (BII) is a computational biology research and postgraduate training institute as well as a national resource centre in bioinformatics within the Biomedical Research Council (BMRC) of A*STAR. Our scientists aim to understand the biomolecular mechanisms that underlie biomedical phenomena by developing sophisticated computational methods to support discovery from a secure and sustainable data hub to cross-disciplinary AI/ML analysis and data integration. We analyse a wide spectrum of biological and clinical data, including omics data (biomolecular sequences, expression profiles, epigenetics data), 3D structures of macromolecules, and biological tissue and macroscopic images from local and international academic, hospital and industry collaborators, public resources and also from in-house efforts. The institute has a vibrant and diverse research portfolio that includes infectious diseases, computational toxicology, precision medicine, oncology and drug discovery.

Job scope and responsibilities:

· Lead efforts in using quantum computing to analyze biomolecular and biomedical data (e.g. protein-ligand interactions, molecular docking, protein/RNA folding, molecular dynamics simulations, imaging, spatial ohmics) and couple it with methods such as quantum machine learning, quantum monte carlo etc, contributing to the development of a broader initiative encompassing AI in drug discovery.

· Collaborate closely with scientists within the Bioinformatics Institute, within A*STAR and within the local ecosystem.

· Lead or participate in research grant proposals.

Requirements:

· Minimum PhD in a related field.

· 2 years or more of postdoctoral experience in quantum computing, demonstrating outstanding research outcomes and strong publication records.

· The candidate must have experience in quantum computing software development/applications, especially with NISQ machines.

· Excellent communication (oral and written) and public speaking skills.

· Strong records of strategic thinking ability.

The above eligibility criteria are not exhaustive. A*STAR may include additional selection criteria based on its prevailing recruitment policies. These policies may be amended from time to time without notice. We regret that only shortlisted candidates will be notified.

The Integrated Circuit Design and System Department at IME is on the lookout for a skilled and innovative engineer to develop groundbreaking cryogenic analog/mixed-signal and RF circuits for quantum computing applications.

In this role, you'll collaborate with a dynamic team of IC designers and physicists, working on state-of-the-art prototypes that will revolutionize qubit technologies through high-fidelity control and read-out. Join us and be part of the next wave of quantum breakthroughs!

Key Responsibilities:

• System level behavioural modelling and simulation using Matlab or Python
• Design and tape out advanced circuit blocks including low-noise amplifiers, variable gain amplifiers, ADCs, DACs, and mixers.
• Model and test circuits at cryogenic temperatures to ensure peak performance in quantum computing environments.
• Collaborate with a multidisciplinary team on system integration and technology demonstrations.
• Train interns and PhD students working on anlog/mixed signal circuit design and testing at cryogenic temperature
• Explore and develop innovative circuit and system solutions, contributing to cutting-edge inventions.

Qualifications:

• A Master's or PhD in Electrical Engineering or a related field.
• 5+ years of hands-on experience in transistor-level analog circuit design.
• Strong expertise in CMOS analog IC design methodologies, with a successful track record in tapeouts.
• Familiarity with the full analog IC design and verification flow.
• Experience with high-voltage processes is a plus.
• Proficiency in using IC testing equipment such as oscilloscopes, spectrum analyzers, etc.
• Ability to produce high-quality scientific publications and patents.
• A motivated team player who thrives on learning and innovation.

The Integrated Circuit Design and System Department at IME is on the lookout for a skilled and innovative engineer to develop groundbreaking cryogenic analog/mixed-signal and RF circuits for quantum computing applications.

In this role, you'll collaborate with a dynamic team of IC designers and physicists, working on state-of-the-art prototypes that will revolutionize qubit technologies through high-fidelity control and read-out. Join us and be part of the next wave of quantum breakthroughs!

Key Responsibilities:

• System level behavioural modelling and simulation using Matlab or Python
• Design and tape out advanced circuit blocks including low-noise amplifiers, variable gain amplifiers, ADCs, DACs, and mixers.
• Model and test circuits at cryogenic temperatures to ensure peak performance in quantum computing environments.
• Collaborate with a multidisciplinary team on system integration and technology demonstrations.
• Train interns and PhD students working on anlog/mixed signal circuit design and testing at cryogenic temperature
• Explore and develop innovative circuit and system solutions, contributing to cutting-edge inventions.

Qualifications:

• A Master's or PhD in Electrical Engineering or a related field.
• 5+ years of hands-on experience in transistor-level analog circuit design.
• Strong expertise in CMOS analog IC design methodologies, with a successful track record in tapeouts.
• Familiarity with the full analog IC design and verification flow.
• Experience with high-voltage processes is a plus.
• Proficiency in using IC testing equipment such as oscilloscopes, spectrum analyzers, etc.
• Ability to produce high-quality scientific publications and patents.
• A motivated team player who thrives on learning and innovation.

Job Overview:

The Institute of Materials Research and Engineering (IMRE) is a research institute of the Agency for Science, Technology, and Research (A*STAR). Quantum Innovation Centre (Q.InC) is an A*STAR-level entity hosted within IMRE. Q.InC and IMRE are looking for a senior principal quantum scientist who has sufficient experience and proven track record of success in leading and managing quantum research, and bringing in external competitive funding. The scientist will be leading part of Q.InC’s hardware research efforts in areas such as quantum sensing and/or integrated photonics, and sit on Q.InC’s management team to strategise for Q.InC’s success.

In this role, you will work on the following but not limited to:

• Report directly to A*STAR’s Chief Quantum Scientist (CQS) and Q.InC’s Executive Director
• Lead and be responsible for Q.InC’s research efforts in quantum sensing and/or integrated photonics and/or other areas as CQS deems suitable
• Be the lead who is responsible for the success of these efforts, and answer questions from CQS, HQ, and A*STAR senior management when needed
• Work together with CQS and Q.InC’s management team to strategise for Q.InC’s excellence, e.g. discuss the progress of responsible research areas and performance of staff in these teams
• For the responsible research areas, lead the relevant Q.InC teams to secure significant external competitive funding from different grant schemes such as NQPI, NQSP, NRF-CRP, MTC Programmatic, IAF-PP/ICP, etc
• For the responsible research areas, lead the relevant Q.InC teams to establish close connections with local agencies and industry partners, such as HTX, DSO, OSTIn, to establish joint research programmes that bring in significant external support
• Help ensure the Q.InC teams being led undergo a smooth transition into other new structures following A*STAR senior management’s guidance

Requirements:

• Proven track record in leading and managing research teams
• A PhD degree in physics or engineering, ideally in quantum science
• 20 years of relevant research experience
• 10 years of relevant management experience
• Understanding of the intricate dynamics in different stakeholders, and optimising for the best outcome for Q.InC

The above eligibility criteria are not exhaustive. A*STAR may include additional selection criteria based on its prevailing recruitment policies. These policies may be amended from time to time without notice. We regret that only shortlisted candidates will be notified.

We are looking for a self-motivated candidate with expertise in high performance digital design and system level architecture modeling to join our Heterogeneous System design team. This candidate will work closely with IME's advanced packing team and contribute to the exploration, optimization and development of multicore & multi-chip system using IME's heterogeneous integration platform.

Job Description:

Digital IC Design and system-level exploration:

• Contribute to the design and development of digital integrated circuits, ensuring they meet performance and functionality requirements.
• Emphasize a system-level perspective in the design process, considering overall system architecture and functionality.
• Incorporate Edge AI principles into digital IC designs, enabling efficient and intelligent processing at the edge of the network.
• RTL implementation for custom circuit design using Verilog/SystemVerilog
• Derive specs and implement necessary customized and highly efficient building blocks such as systolic array, data path controller, scheduler, integer and floating-point processing engine, FFT, etc which are frequency used in various computing architectures.

Simulation, Verification, and Implementation:

• Conduct thorough simulation and verification of digital designs to validate functionality and performance.
• Utilize FPGA in digital IC designs, leveraging its flexibility and reconfigurability for system emulation and architecture exploration
• Perform timing analysis and collaborate with the team to optimize designs for timing closure.
• Contribute to power analysis activities and implement power-efficient design techniques.

Publish research works in prestigious conferences and Journals such as ISSCC, VLSI Symp, A-SSCC, DAC, JSSC and TCAS-I/II.

Prepare detailed design documentation, including specifications, test plans, and reports.

Troubleshoot and debug digital IC designs with a focus on identifying and addressing system-level issues.

Bring creative and innovative solutions to design challenges, staying abreast of industry trends and emerging technologies.

Requirements:

• Master's, or Ph.D. in Electrical Engineering, Computer Engineering, or a related field. The candidate should have prior experiences in IC tape-out of digital/mixed signal SoC and system level modelling and optimization using industry standard tools from leading EDA vendors such as Cadence, Synopsis and Matlab.

We are looking for a self-motivated candidate with expertise in high performance digital design and system level architecture modeling to join our Heterogeneous System design team. This candidate will work closely with IME's advanced packing team and contribute to the exploration, optimization and development of multicore & multi-chip system using IME's heterogeneous integration platform.

Job Description:

Digital IC Design and system-level exploration:

• Contribute to the design and development of digital integrated circuits, ensuring they meet performance and functionality requirements.
• Emphasize a system-level perspective in the design process, considering overall system architecture and functionality.
• Incorporate Edge AI principles into digital IC designs, enabling efficient and intelligent processing at the edge of the network.
• RTL implementation for custom circuit design using Verilog/SystemVerilog
• Derive specs and implement necessary customized and highly efficient building blocks such as systolic array, data path controller, scheduler, integer and floating-point processing engine, FFT, etc which are frequency used in various computing architectures.

Simulation, Verification, and Implementation:

• Conduct thorough simulation and verification of digital designs to validate functionality and performance.
• Utilize FPGA in digital IC designs, leveraging its flexibility and reconfigurability for system emulation and architecture exploration
• Perform timing analysis and collaborate with the team to optimize designs for timing closure.
• Contribute to power analysis activities and implement power-efficient design techniques.

Publish research works in prestigious conferences and Journals such as ISSCC, VLSI Symp, A-SSCC, DAC, JSSC and TCAS-I/II.

Prepare detailed design documentation, including specifications, test plans, and reports.

Troubleshoot and debug digital IC designs with a focus on identifying and addressing system-level issues.

Bring creative and innovative solutions to design challenges, staying abreast of industry trends and emerging technologies.

Requirements:

• Master's, or Ph.D. in Electrical Engineering, Computer Engineering, or a related field. The candidate should have prior experiences in IC tape-out of digital/mixed signal SoC and system level modelling and optimization using industry standard tools from leading EDA vendors such as Cadence, Synopsis and Matlab.

As part of IME Integrated Circuit Design and System Department, we are looking for a candidate with relevant experience in ultrasound imaging system design. This candidate will define an ultrasound transducer array beamformer IC architecture for imaging applications. The candidate will work closely with MEMS team on system architecture, circuit design, simulation, validation, and integration.

Role & Responsibilities

• Perform system-level beamformer architecture, design, and simulation, to derive circuit-level design specifications.
• Beamforming array optimization using AI algorithms.
• Design and implementation of beamformer algorithm in hardware.
• Work together with team to investigate novel circuit/system solutions to create new inventions.

Requirements

• Master’s / PhD degree in Electrical Engineering or equivalent
• Good understanding of ultrasound imaging systems and beamforming theories.
• Knowledge of AI algorithms and implementation will be a plus
• Familiar with IC test equipment such as oscilloscope, spectrum analyzer, etc.
• Able to generate high-quality scientific publications and patents
• Team player, quick learner and self-driven

ROLE:
IME is leading the effort to establish the industry leading Silicon Carbide R&D program. This program aims to advance 200mm Silicon Carbide technologies in various areas, such as epitaxy, device design, process integration & fabrication, and power module packaging. The main objective is to drive disruptive innovations in power device research, with a specific focus on >1.2KV power MOSFETs. These innovations are intended to enhance automotive technologies, vehicle electrification, safety measures, sustainable energy grids, and industrial automation. Key aspects to demonstrate for this role include high power device design, novel device concepts, doping design, gate oxidation, and wide-bandgap process simulations. To achieve this, we are seeking individual with extensive industry experience in using Synopsys/Silvaco TCAD simulator, relevant device characterization skills, design simulation development abilities, a willingness to mentor junior staffs, and strong interpersonal skills. The candidate will contribute to the wide-bandgap & Silicon Carbide team by utilizing their device knowledge, guiding team on device characterization, implementing state-of-art Silicon Carbide power MOSFETs (Planar, Trench & Super-Junction), and innovative novel power MOSFETs for future applications.

RESPONSIBILITIES:

• TCAD modeling & simulation, novel high power device design, simulation, and device characterization

• Design and simulate high voltage Silicon Carbide MOSFETs (planar, trench, SJ MOSFET, IGBT) with a blocking voltage of >1.2K using Synopsys/Silvaco simulator

• Design & simulate practical and effective junction terminations

• Provide guidances on device structure, optimizing cell, power/performance analysis, process risk assessment, and recommendations for experimental split and improvement

• Develop and apply fundamental MOS device physics-based TCAD modelling & electric field management to calculate band structure, carrier transport, blocking voltage,
switching properties, and thermal management for vertical power devices in the presence of interface state density, gate oxide defects, and defects in Silicon Carbide

• Model transport and carrier scattering in devices operating in extreme ambient conditions

• Collaborate with diverse teams, including process integration, characterization, and circuit design engineers, to analyze and troubleshoot device-related issues during
development

• Serve as a resource for colleagues with less experience, and lead small projects with manageable risks and resource requirements

• Work closely with both internal and external customers to understand customer issues and align their demands. And grow this wide-bandgap team to ~5 headcounts in the
next 3 years.

JOB REQUIREMENTS:

• PhD in Electrical Engineering or related field

• >10 years industrial experience for high power device design and modeling

• Deep knowledge of high voltage, high power MOSFETs (including Planar, Trench, S-J MOSFETs, and IGBTs) design and device characterization on 4H-SiC & GaN substrates.

• Solid understanding of wide-bandgap semiconductor materials and the strong physics of MOSFET devices

• Ability to teach and transfer knowledge to junior staff members

• Ability to effectively communicate and plan with customers regarding their needs, issues, and demands

ROLE:
IME is leading the effort to establish the industry leading Silicon Carbide R&D program. This program aims to advance 200mm Silicon Carbide technologies in various areas, such as epitaxy, device design, process integration & fabrication, and power module packaging. The main objective is to drive disruptive innovations in power device research, with a specific focus on >1.2KV power MOSFETs. These innovations are intended to enhance automotive technologies, vehicle electrification, safety measures, sustainable energy grids, and industrial automation. Key aspects to demonstrate for this role include high power device design, novel device concepts, doping design, gate oxidation, and wide-bandgap process simulations. To achieve this, we are seeking individual with extensive industry experience in using Synopsys/Silvaco TCAD simulator, relevant device characterization skills, design simulation development abilities, a willingness to mentor junior staffs, and strong interpersonal skills. The candidate will contribute to the wide-bandgap & Silicon Carbide team by utilizing their device knowledge, guiding team on device characterization, implementing state-of-art Silicon Carbide power MOSFETs (Planar, Trench & Super-Junction), and innovative novel power MOSFETs for future applications.

RESPONSIBILITIES:

• TCAD modeling & simulation, novel high power device design, simulation, and device characterization

• Design and simulate high voltage Silicon Carbide MOSFETs (planar, trench, SJ MOSFET, IGBT) with a blocking voltage of >1.2K using Synopsys/Silvaco simulator

• Design & simulate practical and effective junction terminations

• Provide guidances on device structure, optimizing cell, power/performance analysis, process risk assessment, and recommendations for experimental split and improvement

• Develop and apply fundamental MOS device physics-based TCAD modelling & electric field management to calculate band structure, carrier transport, blocking voltage,
switching properties, and thermal management for vertical power devices in the presence of interface state density, gate oxide defects, and defects in Silicon Carbide

• Model transport and carrier scattering in devices operating in extreme ambient conditions

• Collaborate with diverse teams, including process integration, characterization, and circuit design engineers, to analyze and troubleshoot device-related issues during
development

• Serve as a resource for colleagues with less experience, and lead small projects with manageable risks and resource requirements

• Work closely with both internal and external customers to understand customer issues and align their demands. And grow this wide-bandgap team to ~5 headcounts in the
next 3 years.

JOB REQUIREMENTS:

• PhD in Electrical Engineering or related field

• >10 years industrial experience for high power device design and modeling

• Deep knowledge of high voltage, high power MOSFETs (including Planar, Trench, S-J MOSFETs, and IGBTs) design and device characterization on 4H-SiC & GaN substrates.

• Solid understanding of wide-bandgap semiconductor materials and the strong physics of MOSFET devices

• Ability to teach and transfer knowledge to junior staff members

• Ability to effectively communicate and plan with customers regarding their needs, issues, and demands

Roles and Responsibilities:

• TCAD modeling, simulation, and innovative design of high power electronics devices, as well as device characterization.
• Develop and simulate high power SiC MOSFETs (planar, trench, Super-Junction MOSFET, IGBT) with a blocking voltage exceeding 1.2K using the industry-standard Synopsys/Silvaco simulator.
• Create and simulate practical & efficient junction terminations.
• Model transport and carrier scattering in devices operating under extreme ambient conditions.
• Serve as a valuable resource for colleagues with lesser TCAD power electronics experience and take lead in group projects with managing risks & resource requirements.
• Foster close collaborations with both internal and external customers to fully understand customer issues and requirements.

Job Requirements:

• PhD Degree in Electrical Engineering or related field.
• >2-3 years industrial experience for high power devices design and modeling.
• Thorough understanding of different types of high-voltage, high-power MOSFETs including Planar, Trench, Super-Junction MOSFETs, and IGBTs, with a focus on design and device characterizations.
• Hands-on skill in designing MOSFET/diode layouts.
• Excellent communication skills to effectively engage with customers, address their needs, resolve issues, and meet demands.

Roles and Responsibilities:

• TCAD modeling, simulation, and innovative design of high power electronics devices, as well as device characterization.
• Develop and simulate high power SiC MOSFETs (planar, trench, Super-Junction MOSFET, IGBT) with a blocking voltage exceeding 1.2K using the industry-standard Synopsys/Silvaco simulator.
• Create and simulate practical & efficient junction terminations.
• Model transport and carrier scattering in devices operating under extreme ambient conditions.
• Serve as a valuable resource for colleagues with lesser TCAD power electronics experience and take lead in group projects with managing risks & resource requirements.
• Foster close collaborations with both internal and external customers to fully understand customer issues and requirements.

Job Requirements:

• PhD Degree in Electrical Engineering or related field.
• >2-3 years industrial experience for high power devices design and modeling.
• Thorough understanding of different types of high-voltage, high-power MOSFETs including Planar, Trench, Super-Junction MOSFETs, and IGBTs, with a focus on design and device characterizations.
• Hands-on skill in designing MOSFET/diode layouts.
• Excellent communication skills to effectively engage with customers, address their needs, resolve issues, and meet demands.

As part of IME’s Photonics & Sensors Department, the candidate will take lead of the design and integration of III/V-on-Si technologies, including such as III/V laser diode (LD) and photodetector (PD) through heterogenous integration on silicon platform. This will include III/V LD and PD design, characterization, photonics integration, and verification of system functionalities. You will work closely with an excellent multidisciplinary team working on photonics, electronics, semiconductor process, integration, and fab operation.

Responsibilities:

• Design III/V LD and PD suitable for III/V-on-Si heterogeneous integration
• Work with the integration team to design feasible heterogenous integration flow to realize the device fabrication and circuit integration, using 8-inch and 12-inch facilities.
• Design of Experiments (DOE) for both design and process margin checking and control
• Experiment data analysis and documentation
• Design and fabrication process optimization based on the analysis of the process metrology data, device / circuit performance data
• Preparation of technical presentations and papers for internal meetings, as well as conferences and journals.
• Collaborate with project team to ensure quality and on-time delivery for various projects.
• Performs other duties as assigned.

Qualifications:

• PhD in Integrated Photonics, Opto-electronics, Materials Science, Physics or equivalent
• Strong hands-on experience in photonics integration.
• Design experience of III/V laser and photodetector
• Hands-on experience in photonic simulation using various electrical / photonics design software.
• Strong communication, industry awareness, and problem-solving skills.
• Minimum 3 years relevant design and experiment skills.
• Strong self-motivation and interest in the next-generation photonics technology development.
• Industry experience is a plus.

Job Overview:

The Institute of Materials Research and Engineering (IMRE) is a research institute of the Agency for Science, Technology, and Research (A*STAR). Quantum Innovation Centre (Q.InC) is an A*STAR-level entity hosted within IMRE. Q.InC and IMRE are looking for a senior principal quantum scientist who has sufficient experience and proven track record of success in leading and managing quantum research, and bringing in external competitive funding. The scientist will be leading part of Q.InC’s hardware research efforts in areas such as quantum sensing and/or integrated photonics, and sit on Q.InC’s management team to strategise for Q.InC’s success.

In this role, you will work on the following but not limited to:

• Report directly to A*STAR’s Chief Quantum Scientist (CQS) and Q.InC’s Executive Director
• Lead and be responsible for Q.InC’s research efforts in quantum sensing and/or integrated photonics and/or other areas as CQS deems suitable
• Be the lead who is responsible for the success of these efforts, and answer questions from CQS, HQ, and A*STAR senior management when needed
• Work together with CQS and Q.InC’s management team to strategise for Q.InC’s excellence, e.g. discuss the progress of responsible research areas and performance of staff in these teams
• For the responsible research areas, lead the relevant Q.InC teams to secure significant external competitive funding from different grant schemes such as NQPI, NQSP, NRF-CRP, MTC Programmatic, IAF-PP/ICP, etc
• For the responsible research areas, lead the relevant Q.InC teams to establish close connections with local agencies and industry partners, such as HTX, DSO, OSTIn, to establish joint research programmes that bring in significant external support
• Help ensure the Q.InC teams being led undergo a smooth transition into other new structures following A*STAR senior management’s guidance

Requirements:

• Proven track record in leading and managing research teams
• A PhD degree in physics or engineering, ideally in quantum science
• 20 years of relevant research experience
• 10 years of relevant management experience
• Understanding of the intricate dynamics in different stakeholders, and optimising for the best outcome for Q.InC

The above eligibility criteria are not exhaustive. A*STAR may include additional selection criteria based on its prevailing recruitment policies. These policies may be amended from time to time without notice. We regret that only shortlisted candidates will be notified.

ROLE:
IME is leading the effort to establish the industry leading Silicon Carbide R&D program. This program aims to advance 200mm Silicon Carbide technologies in various areas, such as epitaxy, device design, process integration & fabrication, and power module packaging. The main objective is to drive disruptive innovations in power device research, with a specific focus on >1.2KV power MOSFETs. These innovations are intended to enhance automotive technologies, vehicle electrification, safety measures, sustainable energy grids, and industrial automation. Key aspects to demonstrate for this role include high power device design, novel device concepts, doping design, gate oxidation, and wide-bandgap process simulations. To achieve this, we are seeking individual with extensive industry experience in using Synopsys/Silvaco TCAD simulator, relevant device characterization skills, design simulation development abilities, a willingness to mentor junior staffs, and strong interpersonal skills. The candidate will contribute to the wide-bandgap & Silicon Carbide team by utilizing their device knowledge, guiding team on device characterization, implementing state-of-art Silicon Carbide power MOSFETs (Planar, Trench & Super-Junction), and innovative novel power MOSFETs for future applications.

RESPONSIBILITIES:

• TCAD modeling & simulation, novel high power device design, simulation, and device characterization

• Design and simulate high voltage Silicon Carbide MOSFETs (planar, trench, SJ MOSFET, IGBT) with a blocking voltage of >1.2K using Synopsys/Silvaco simulator

• Design & simulate practical and effective junction terminations

• Provide guidances on device structure, optimizing cell, power/performance analysis, process risk assessment, and recommendations for experimental split and improvement

• Develop and apply fundamental MOS device physics-based TCAD modelling & electric field management to calculate band structure, carrier transport, blocking voltage,
switching properties, and thermal management for vertical power devices in the presence of interface state density, gate oxide defects, and defects in Silicon Carbide

• Model transport and carrier scattering in devices operating in extreme ambient conditions

• Collaborate with diverse teams, including process integration, characterization, and circuit design engineers, to analyze and troubleshoot device-related issues during
development

• Serve as a resource for colleagues with less experience, and lead small projects with manageable risks and resource requirements

• Work closely with both internal and external customers to understand customer issues and align their demands. And grow this wide-bandgap team to ~5 headcounts in the
next 3 years.

JOB REQUIREMENTS:

• PhD in Electrical Engineering or related field

• >10 years industrial experience for high power device design and modeling

• Deep knowledge of high voltage, high power MOSFETs (including Planar, Trench, S-J MOSFETs, and IGBTs) design and device characterization on 4H-SiC & GaN substrates.

• Solid understanding of wide-bandgap semiconductor materials and the strong physics of MOSFET devices

• Ability to teach and transfer knowledge to junior staff members

• Ability to effectively communicate and plan with customers regarding their needs, issues, and demands

ROLE:
IME is leading the effort to establish the industry leading Silicon Carbide R&D program. This program aims to advance 200mm Silicon Carbide technologies in various areas, such as epitaxy, device design, process integration & fabrication, and power module packaging. The main objective is to drive disruptive innovations in power device research, with a specific focus on >1.2KV power MOSFETs. These innovations are intended to enhance automotive technologies, vehicle electrification, safety measures, sustainable energy grids, and industrial automation. Key aspects to demonstrate for this role include high power device design, novel device concepts, doping design, gate oxidation, and wide-bandgap process simulations. To achieve this, we are seeking individual with extensive industry experience in using Synopsys/Silvaco TCAD simulator, relevant device characterization skills, design simulation development abilities, a willingness to mentor junior staffs, and strong interpersonal skills. The candidate will contribute to the wide-bandgap & Silicon Carbide team by utilizing their device knowledge, guiding team on device characterization, implementing state-of-art Silicon Carbide power MOSFETs (Planar, Trench & Super-Junction), and innovative novel power MOSFETs for future applications.

RESPONSIBILITIES:

• TCAD modeling & simulation, novel high power device design, simulation, and device characterization

• Design and simulate high voltage Silicon Carbide MOSFETs (planar, trench, SJ MOSFET, IGBT) with a blocking voltage of >1.2K using Synopsys/Silvaco simulator

• Design & simulate practical and effective junction terminations

• Provide guidances on device structure, optimizing cell, power/performance analysis, process risk assessment, and recommendations for experimental split and improvement

• Develop and apply fundamental MOS device physics-based TCAD modelling & electric field management to calculate band structure, carrier transport, blocking voltage,
switching properties, and thermal management for vertical power devices in the presence of interface state density, gate oxide defects, and defects in Silicon Carbide

• Model transport and carrier scattering in devices operating in extreme ambient conditions

• Collaborate with diverse teams, including process integration, characterization, and circuit design engineers, to analyze and troubleshoot device-related issues during
development

• Serve as a resource for colleagues with less experience, and lead small projects with manageable risks and resource requirements

• Work closely with both internal and external customers to understand customer issues and align their demands. And grow this wide-bandgap team to ~5 headcounts in the
next 3 years.

JOB REQUIREMENTS:

• PhD in Electrical Engineering or related field

• >10 years industrial experience for high power device design and modeling

• Deep knowledge of high voltage, high power MOSFETs (including Planar, Trench, S-J MOSFETs, and IGBTs) design and device characterization on 4H-SiC & GaN substrates.

• Solid understanding of wide-bandgap semiconductor materials and the strong physics of MOSFET devices

• Ability to teach and transfer knowledge to junior staff members

• Ability to effectively communicate and plan with customers regarding their needs, issues, and demands

We are looking for a self-motivated candidate with expertise in high performance digital design and system level architecture modeling to join our Heterogeneous System design team. This candidate will work closely with IME’s advanced packing team and contribute to the exploration, optimization and development of multicore & multi-chip system using IME’s heterogeneous integration platform.

Job Description:

· Digital IC Design and system-level exploration:

o Lead and contribute to the design and development of digital integrated circuits, ensuring they meet performance and functionality requirements.

o <!-Emphasize a system-level perspective in the design process, considering overall system architecture and functionality.

o Apply a deep understanding of cryogenic temperature effects on digital ICs and implement design strategies for optimal performance in low-temperature environments.

o Incorporate Edge AI principles into digital IC designs, enabling efficient and intelligent processing at the edge of the network.

o RTL implementation for custom circuit design using Verilog/SystemVerilog

o Derive specs and implement necessary customized and highly efficient building blocks such as systolic array, data path controller, scheduler, integer and floating-point processing engine, FFT, etc which are frequency used in various computing architecture such as in-memory computing, deep learning and neuromorphic computing.

· Simulation, Verification, and Implementation:

o Conduct thorough simulation and verification of digital designs to validate functionality and performance.

o Utilize FPGA in digital IC designs, leveraging its flexibility and reconfigurability for system emulation and architecture exploration

o Perform timing analysis and collaborate with the team to optimize designs for timing closure.

o Contribute to power analysis activities and implement power-efficient design techniques.

Publish research works in prestigious conferences and Journals such as ISSCC, VLSI Symp, A-SSCC, DAC, JSSC and TCAS-I/II.

· Collaborate closely with cross-functional teams, including hardware and software engineers, to seamlessly integrate digital ICs into the overall system architecture.

· Prepare detailed design documentation, including specifications, test plans, and reports.

· Troubleshoot and debug digital IC designs with a focus on identifying and addressing system-level issues.

· Bring creative and innovative solutions to design challenges, staying abreast of industry trends and emerging technologies.

Requirements: Master’s, or Ph.D. in Electrical Engineering, Computer Engineering, or a related field. The candidate should have prior experiences in IC tape-out of digital/mixed signal SoC and system level modelling and optimization using industry standard tools from leading EDA vendors such as Cadence, Synopsis and Matlab.

We are looking for a self-motivated candidate with expertise in high performance digital design and system level architecture modeling to join our Heterogeneous System design team. This candidate will work closely with IME’s advanced packing team and contribute to the exploration, optimization and development of multicore & multi-chip system using IME’s heterogeneous integration platform.

Job Description:

· Digital IC Design and system-level exploration:

o Lead and contribute to the design and development of digital integrated circuits, ensuring they meet performance and functionality requirements.

o <!-Emphasize a system-level perspective in the design process, considering overall system architecture and functionality.

o Apply a deep understanding of cryogenic temperature effects on digital ICs and implement design strategies for optimal performance in low-temperature environments.

o Incorporate Edge AI principles into digital IC designs, enabling efficient and intelligent processing at the edge of the network.

o RTL implementation for custom circuit design using Verilog/SystemVerilog

o Derive specs and implement necessary customized and highly efficient building blocks such as systolic array, data path controller, scheduler, integer and floating-point processing engine, FFT, etc which are frequency used in various computing architecture such as in-memory computing, deep learning and neuromorphic computing.

· Simulation, Verification, and Implementation:

o Conduct thorough simulation and verification of digital designs to validate functionality and performance.

o Utilize FPGA in digital IC designs, leveraging its flexibility and reconfigurability for system emulation and architecture exploration

o Perform timing analysis and collaborate with the team to optimize designs for timing closure.

o Contribute to power analysis activities and implement power-efficient design techniques.

Publish research works in prestigious conferences and Journals such as ISSCC, VLSI Symp, A-SSCC, DAC, JSSC and TCAS-I/II.

· Collaborate closely with cross-functional teams, including hardware and software engineers, to seamlessly integrate digital ICs into the overall system architecture.

· Prepare detailed design documentation, including specifications, test plans, and reports.

· Troubleshoot and debug digital IC designs with a focus on identifying and addressing system-level issues.

· Bring creative and innovative solutions to design challenges, staying abreast of industry trends and emerging technologies.

Requirements: Master’s, or Ph.D. in Electrical Engineering, Computer Engineering, or a related field. The candidate should have prior experiences in IC tape-out of digital/mixed signal SoC and system level modelling and optimization using industry standard tools from leading EDA vendors such as Cadence, Synopsis and Matlab.