Total 20 Senior Executive research nurse job vacancies in Art / Design / Entertainment category in Singapore

Roles and Responsibilities:

• TCAD modeling, simulation, and innovative design of high power electronics devices, as well as device characterization.
• Develop and simulate high power SiC MOSFETs (planar, trench, Super-Junction MOSFET, IGBT) with a blocking voltage exceeding 1.2K using the industry-standard Synopsys/Silvaco simulator.
• Create and simulate practical & efficient junction terminations.
• Model transport and carrier scattering in devices operating under extreme ambient conditions.
• Serve as a valuable resource for colleagues with lesser TCAD power electronics experience and take lead in group projects with managing risks & resource requirements.
• Foster close collaborations with both internal and external customers to fully understand customer issues and requirements.

Job Requirements:

• PhD Degree in Electrical Engineering or related field.
• >2-3 years industrial experience for high power devices design and modeling.
• Thorough understanding of different types of high-voltage, high-power MOSFETs including Planar, Trench, Super-Junction MOSFETs, and IGBTs, with a focus on design and device characterizations.
• Hands-on skill in designing MOSFET/diode layouts.
• Excellent communication skills to effectively engage with customers, address their needs, resolve issues, and meet demands.

ROLE:
IME is leading the effort to establish the industry leading Silicon Carbide R&D program. This program aims to advance 200mm Silicon Carbide technologies in various areas, such as epitaxy, device design, process integration & fabrication, and power module packaging. The main objective is to drive disruptive innovations in power device research, with a specific focus on >1.2KV power MOSFETs. These innovations are intended to enhance automotive technologies, vehicle electrification, safety measures, sustainable energy grids, and industrial automation. Key aspects to demonstrate for this role include high power device design, novel device concepts, doping design, gate oxidation, and wide-bandgap process simulations. To achieve this, we are seeking individual with extensive industry experience in using Synopsys/Silvaco TCAD simulator, relevant device characterization skills, design simulation development abilities, a willingness to mentor junior staffs, and strong interpersonal skills. The candidate will contribute to the wide-bandgap & Silicon Carbide team by utilizing their device knowledge, guiding team on device characterization, implementing state-of-art Silicon Carbide power MOSFETs (Planar, Trench & Super-Junction), and innovative novel power MOSFETs for future applications.

RESPONSIBILITIES:

• TCAD modeling & simulation, novel high power device design, simulation, and device characterization

• Design and simulate high voltage Silicon Carbide MOSFETs (planar, trench, SJ MOSFET, IGBT) with a blocking voltage of >1.2K using Synopsys/Silvaco simulator

• Design & simulate practical and effective junction terminations

• Provide guidances on device structure, optimizing cell, power/performance analysis, process risk assessment, and recommendations for experimental split and improvement

• Develop and apply fundamental MOS device physics-based TCAD modelling & electric field management to calculate band structure, carrier transport, blocking voltage,
switching properties, and thermal management for vertical power devices in the presence of interface state density, gate oxide defects, and defects in Silicon Carbide

• Model transport and carrier scattering in devices operating in extreme ambient conditions

• Collaborate with diverse teams, including process integration, characterization, and circuit design engineers, to analyze and troubleshoot device-related issues during
development

• Serve as a resource for colleagues with less experience, and lead small projects with manageable risks and resource requirements

• Work closely with both internal and external customers to understand customer issues and align their demands. And grow this wide-bandgap team to ~5 headcounts in the
next 3 years.

JOB REQUIREMENTS:

• PhD in Electrical Engineering or related field

• >10 years industrial experience for high power device design and modeling

• Deep knowledge of high voltage, high power MOSFETs (including Planar, Trench, S-J MOSFETs, and IGBTs) design and device characterization on 4H-SiC & GaN substrates.

• Solid understanding of wide-bandgap semiconductor materials and the strong physics of MOSFET devices

• Ability to teach and transfer knowledge to junior staff members

• Ability to effectively communicate and plan with customers regarding their needs, issues, and demands

ROLE:
IME is leading the effort to establish the industry leading Silicon Carbide R&D program. This program aims to advance 200mm Silicon Carbide technologies in various areas, such as epitaxy, device design, process integration & fabrication, and power module packaging. The main objective is to drive disruptive innovations in power device research, with a specific focus on >1.2KV power MOSFETs. These innovations are intended to enhance automotive technologies, vehicle electrification, safety measures, sustainable energy grids, and industrial automation. Key aspects to demonstrate for this role include high power device design, novel device concepts, doping design, gate oxidation, and wide-bandgap process simulations. To achieve this, we are seeking individual with extensive industry experience in using Synopsys/Silvaco TCAD simulator, relevant device characterization skills, design simulation development abilities, a willingness to mentor junior staffs, and strong interpersonal skills. The candidate will contribute to the wide-bandgap & Silicon Carbide team by utilizing their device knowledge, guiding team on device characterization, implementing state-of-art Silicon Carbide power MOSFETs (Planar, Trench & Super-Junction), and innovative novel power MOSFETs for future applications.

RESPONSIBILITIES:

• TCAD modeling & simulation, novel high power device design, simulation, and device characterization

• Design and simulate high voltage Silicon Carbide MOSFETs (planar, trench, SJ MOSFET, IGBT) with a blocking voltage of >1.2K using Synopsys/Silvaco simulator

• Design & simulate practical and effective junction terminations

• Provide guidances on device structure, optimizing cell, power/performance analysis, process risk assessment, and recommendations for experimental split and improvement

• Develop and apply fundamental MOS device physics-based TCAD modelling & electric field management to calculate band structure, carrier transport, blocking voltage,
switching properties, and thermal management for vertical power devices in the presence of interface state density, gate oxide defects, and defects in Silicon Carbide

• Model transport and carrier scattering in devices operating in extreme ambient conditions

• Collaborate with diverse teams, including process integration, characterization, and circuit design engineers, to analyze and troubleshoot device-related issues during
development

• Serve as a resource for colleagues with less experience, and lead small projects with manageable risks and resource requirements

• Work closely with both internal and external customers to understand customer issues and align their demands. And grow this wide-bandgap team to ~5 headcounts in the
next 3 years.

JOB REQUIREMENTS:

• PhD in Electrical Engineering or related field

• >10 years industrial experience for high power device design and modeling

• Deep knowledge of high voltage, high power MOSFETs (including Planar, Trench, S-J MOSFETs, and IGBTs) design and device characterization on 4H-SiC & GaN substrates.

• Solid understanding of wide-bandgap semiconductor materials and the strong physics of MOSFET devices

• Ability to teach and transfer knowledge to junior staff members

• Ability to effectively communicate and plan with customers regarding their needs, issues, and demands

The Bioinformatics Institute (BII), Agency for Science, Technology and Research (A*STR) is seeking applications for an outstanding scientist in the field of quantum computing.

The Bioinformatics Institute (BII) is a computational biology research and postgraduate training institute as well as a national resource centre in bioinformatics within the Biomedical Research Council (BMRC) of A*STAR. Our scientists aim to understand the biomolecular mechanisms that underlie biomedical phenomena by developing sophisticated computational methods to support discovery from a secure and sustainable data hub to cross-disciplinary AI/ML analysis and data integration. We analyse a wide spectrum of biological and clinical data, including omics data (biomolecular sequences, expression profiles, epigenetics data), 3D structures of macromolecules, and biological tissue and macroscopic images from local and international academic, hospital and industry collaborators, public resources and also from in-house efforts. The institute has a vibrant and diverse research portfolio that includes infectious diseases, computational toxicology, precision medicine, oncology and drug discovery.

Job scope and responsibilities:

· Lead efforts in using quantum computing to analyze biomolecular and biomedical data (e.g. protein-ligand interactions, molecular docking, protein/RNA folding, molecular dynamics simulations, imaging, spatial ohmics) and couple it with methods such as quantum machine learning, quantum monte carlo etc, contributing to the development of a broader initiative encompassing AI in drug discovery.

· Collaborate closely with scientists within the Bioinformatics Institute, within A*STAR and within the local ecosystem.

· Lead or participate in research grant proposals.

Requirements:

· Minimum PhD in a related field.

· 5 years or more of postdoctoral experience in quantum computing, demonstrating outstanding research outcomes and strong publication records.

· The candidate must have experience in quantum computing software development/applications, especially with NISQ machines.

· Excellent communication (oral and written) and public speaking skills.

· Strong records of strategic thinking ability.

The above eligibility criteria are not exhaustive. A*STAR may include additional selection criteria based on its prevailing recruitment policies. These policies may be amended from time to time without notice. We regret that only shortlisted candidates will be notified.

• Clinic Nursing duties
• OT / AU nursing duties

Requirements

• Min Diploma / Degree in nursing
• Min 1 year of Nursing experience in OT or AU

office hours - 5,5 days

clinic Environment

$3K to $5K plus (depending on experience)

Interested candidates, please forward your resume to [email protected]

Consultant: Huang Jingsheng Kevyn (R1333338)

Recruit Express Pte Ltd (99C4599)

Project-based Architectural Design Consultancy Services:

• Conceptualize concept and schematic designs.
• Carry out feasibility studies and presents design proposals.
• Design development that would include detailed drawings and specifications for contractors to follow for construction purposes.
• Assist in tendering and bidding processes and inspect the on-going construction to ensure that the project is built according to design plans.
• Liaise with and discuss project-relevant issues with clients.
• Negotiate with contractors on design requirements and building progress.
• Oversee progress of on-site work; ensure project is built according to design plans and resolve any issues that may arise.
• Work with engineers and surveyors to make sure that the building plans meet the necessary building standards.
• Project and/or design management of more than 3 - 4 projects at any given time.

Research-related Work:

• Assist in carrying out practice-based research into specific issues and challenges surrounding the built environment, with the aim of gaining greater insight into these issues and developing design strategies and solutions in response to them.
• Work with Director (Design and Research) to enhance public/industry awareness of the firm’s design philosophies, capabilities, and accomplishments (directly and indirectly) through design, writing, teaching, and research work.

Requirements:

• Minimum Bachelor Degree in Architecture or equivalent.
• At least 5 years of working experience in the related field.
• Able to work well with a team and take the lead at the working level.
• Able to guide younger staff in design matters.
• Possess good design and graphic communication skills, especially in the concept design, schematic design and design development stages.
• Positive attitude
• Some experience with tender documentation and construction stages.
• Software skills: Rhino, Grasshopper, Adobe Photoshop, Illustrator and Indesign. Revit and computational skills will be a plus.
• Willing to take on new challenges.

• Clinic Nursing duties
• OT / AU nursing duties

Requirements

• Min Diploma / Degree in nursing
• Min 1 year of Nursing experience in OT or AU

office hours - 5,5 days

clinic Environment

$3K to $5K plus (depending on experience)

Interested candidates, please forward your resume to [email protected]

Consultant: Huang Jingsheng Kevyn (R1333338)

Recruit Express Pte Ltd (99C4599)

Job Overview:

The Institute of Materials Research and Engineering (IMRE) is a research institute of the Agency for Science, Technology, and Research (A*STAR). Quantum Innovation Centre (Q.InC) is an A*STAR-level entity hosted within IMRE. Q.InC and IMRE are looking for a senior principal quantum scientist who has sufficient experience and proven track record of success in leading and managing quantum research, and bringing in external competitive funding. The scientist will be leading part of Q.InC’s hardware research efforts in areas such as quantum sensing and/or integrated photonics, and sit on Q.InC’s management team to strategise for Q.InC’s success.

In this role, you will work on the following but not limited to:

• Report directly to A*STAR’s Chief Quantum Scientist (CQS) and Q.InC’s Executive Director
• Lead and be responsible for Q.InC’s research efforts in quantum sensing and/or integrated photonics and/or other areas as CQS deems suitable
• Be the lead who is responsible for the success of these efforts, and answer questions from CQS, HQ, and A*STAR senior management when needed
• Work together with CQS and Q.InC’s management team to strategise for Q.InC’s excellence, e.g. discuss the progress of responsible research areas and performance of staff in these teams
• For the responsible research areas, lead the relevant Q.InC teams to secure significant external competitive funding from different grant schemes such as NQPI, NQSP, NRF-CRP, MTC Programmatic, IAF-PP/ICP, etc
• For the responsible research areas, lead the relevant Q.InC teams to establish close connections with local agencies and industry partners, such as HTX, DSO, OSTIn, to establish joint research programmes that bring in significant external support
• Help ensure the Q.InC teams being led undergo a smooth transition into other new structures following A*STAR senior management’s guidance

Requirements:

• Proven track record in leading and managing research teams
• A PhD degree in physics or engineering, ideally in quantum science
• 20 years of relevant research experience
• 10 years of relevant management experience
• Understanding of the intricate dynamics in different stakeholders, and optimising for the best outcome for Q.InC

The above eligibility criteria are not exhaustive. A*STAR may include additional selection criteria based on its prevailing recruitment policies. These policies may be amended from time to time without notice. We regret that only shortlisted candidates will be notified.

ROLE:
IME is leading the effort to establish the industry leading Silicon Carbide R&D program. This program aims to advance 200mm Silicon Carbide technologies in various areas, such as epitaxy, device design, process integration & fabrication, and power module packaging. The main objective is to drive disruptive innovations in power device research, with a specific focus on >1.2KV power MOSFETs. These innovations are intended to enhance automotive technologies, vehicle electrification, safety measures, sustainable energy grids, and industrial automation. Key aspects to demonstrate for this role include high power device design, novel device concepts, doping design, gate oxidation, and wide-bandgap process simulations. To achieve this, we are seeking individual with extensive industry experience in using Synopsys/Silvaco TCAD simulator, relevant device characterization skills, design simulation development abilities, a willingness to mentor junior staffs, and strong interpersonal skills. The candidate will contribute to the wide-bandgap & Silicon Carbide team by utilizing their device knowledge, guiding team on device characterization, implementing state-of-art Silicon Carbide power MOSFETs (Planar, Trench & Super-Junction), and innovative novel power MOSFETs for future applications.

RESPONSIBILITIES:

• TCAD modeling & simulation, novel high power device design, simulation, and device characterization

• Design and simulate high voltage Silicon Carbide MOSFETs (planar, trench, SJ MOSFET, IGBT) with a blocking voltage of >1.2K using Synopsys/Silvaco simulator

• Design & simulate practical and effective junction terminations

• Provide guidances on device structure, optimizing cell, power/performance analysis, process risk assessment, and recommendations for experimental split and improvement

• Develop and apply fundamental MOS device physics-based TCAD modelling & electric field management to calculate band structure, carrier transport, blocking voltage,
switching properties, and thermal management for vertical power devices in the presence of interface state density, gate oxide defects, and defects in Silicon Carbide

• Model transport and carrier scattering in devices operating in extreme ambient conditions

• Collaborate with diverse teams, including process integration, characterization, and circuit design engineers, to analyze and troubleshoot device-related issues during
development

• Serve as a resource for colleagues with less experience, and lead small projects with manageable risks and resource requirements

• Work closely with both internal and external customers to understand customer issues and align their demands. And grow this wide-bandgap team to ~5 headcounts in the
next 3 years.

JOB REQUIREMENTS:

• PhD in Electrical Engineering or related field

• >10 years industrial experience for high power device design and modeling

• Deep knowledge of high voltage, high power MOSFETs (including Planar, Trench, S-J MOSFETs, and IGBTs) design and device characterization on 4H-SiC & GaN substrates.

• Solid understanding of wide-bandgap semiconductor materials and the strong physics of MOSFET devices

• Ability to teach and transfer knowledge to junior staff members

• Ability to effectively communicate and plan with customers regarding their needs, issues, and demands

ROLE:
IME is leading the effort to establish the industry leading Silicon Carbide R&D program. This program aims to advance 200mm Silicon Carbide technologies in various areas, such as epitaxy, device design, process integration & fabrication, and power module packaging. The main objective is to drive disruptive innovations in power device research, with a specific focus on >1.2KV power MOSFETs. These innovations are intended to enhance automotive technologies, vehicle electrification, safety measures, sustainable energy grids, and industrial automation. Key aspects to demonstrate for this role include high power device design, novel device concepts, doping design, gate oxidation, and wide-bandgap process simulations. To achieve this, we are seeking individual with extensive industry experience in using Synopsys/Silvaco TCAD simulator, relevant device characterization skills, design simulation development abilities, a willingness to mentor junior staffs, and strong interpersonal skills. The candidate will contribute to the wide-bandgap & Silicon Carbide team by utilizing their device knowledge, guiding team on device characterization, implementing state-of-art Silicon Carbide power MOSFETs (Planar, Trench & Super-Junction), and innovative novel power MOSFETs for future applications.

RESPONSIBILITIES:

• TCAD modeling & simulation, novel high power device design, simulation, and device characterization

• Design and simulate high voltage Silicon Carbide MOSFETs (planar, trench, SJ MOSFET, IGBT) with a blocking voltage of >1.2K using Synopsys/Silvaco simulator

• Design & simulate practical and effective junction terminations

• Provide guidances on device structure, optimizing cell, power/performance analysis, process risk assessment, and recommendations for experimental split and improvement

• Develop and apply fundamental MOS device physics-based TCAD modelling & electric field management to calculate band structure, carrier transport, blocking voltage,
switching properties, and thermal management for vertical power devices in the presence of interface state density, gate oxide defects, and defects in Silicon Carbide

• Model transport and carrier scattering in devices operating in extreme ambient conditions

• Collaborate with diverse teams, including process integration, characterization, and circuit design engineers, to analyze and troubleshoot device-related issues during
development

• Serve as a resource for colleagues with less experience, and lead small projects with manageable risks and resource requirements

• Work closely with both internal and external customers to understand customer issues and align their demands. And grow this wide-bandgap team to ~5 headcounts in the
next 3 years.

JOB REQUIREMENTS:

• PhD in Electrical Engineering or related field

• >10 years industrial experience for high power device design and modeling

• Deep knowledge of high voltage, high power MOSFETs (including Planar, Trench, S-J MOSFETs, and IGBTs) design and device characterization on 4H-SiC & GaN substrates.

• Solid understanding of wide-bandgap semiconductor materials and the strong physics of MOSFET devices

• Ability to teach and transfer knowledge to junior staff members

• Ability to effectively communicate and plan with customers regarding their needs, issues, and demands

Roles and Responsibilities:

• TCAD modeling, simulation, and innovative design of high power electronics devices, as well as device characterization.
• Develop and simulate high power SiC MOSFETs (planar, trench, Super-Junction MOSFET, IGBT) with a blocking voltage exceeding 1.2K using the industry-standard Synopsys/Silvaco simulator.
• Create and simulate practical & efficient junction terminations.
• Model transport and carrier scattering in devices operating under extreme ambient conditions.
• Serve as a valuable resource for colleagues with lesser TCAD power electronics experience and take lead in group projects with managing risks & resource requirements.
• Foster close collaborations with both internal and external customers to fully understand customer issues and requirements.

Job Requirements:

• PhD Degree in Electrical Engineering or related field.
• >2-3 years industrial experience for high power devices design and modeling.
• Thorough understanding of different types of high-voltage, high-power MOSFETs including Planar, Trench, Super-Junction MOSFETs, and IGBTs, with a focus on design and device characterizations.
• Hands-on skill in designing MOSFET/diode layouts.
• Excellent communication skills to effectively engage with customers, address their needs, resolve issues, and meet demands.

Roles and Responsibilities:

• TCAD modeling, simulation, and innovative design of high power electronics devices, as well as device characterization.
• Develop and simulate high power SiC MOSFETs (planar, trench, Super-Junction MOSFET, IGBT) with a blocking voltage exceeding 1.2K using the industry-standard Synopsys/Silvaco simulator.
• Create and simulate practical & efficient junction terminations.
• Model transport and carrier scattering in devices operating under extreme ambient conditions.
• Serve as a valuable resource for colleagues with lesser TCAD power electronics experience and take lead in group projects with managing risks & resource requirements.
• Foster close collaborations with both internal and external customers to fully understand customer issues and requirements.

Job Requirements:

• PhD Degree in Electrical Engineering or related field.
• >2-3 years industrial experience for high power devices design and modeling.
• Thorough understanding of different types of high-voltage, high-power MOSFETs including Planar, Trench, Super-Junction MOSFETs, and IGBTs, with a focus on design and device characterizations.
• Hands-on skill in designing MOSFET/diode layouts.
• Excellent communication skills to effectively engage with customers, address their needs, resolve issues, and meet demands.

As part of IME’s Photonics & Sensors Department, the candidate will take lead of the design and integration of III/V-on-Si technologies, including such as III/V laser diode (LD) and photodetector (PD) through heterogenous integration on silicon platform. This will include III/V LD and PD design, characterization, photonics integration, and verification of system functionalities. You will work closely with an excellent multidisciplinary team working on photonics, electronics, semiconductor process, integration, and fab operation.

Responsibilities:

• Design III/V LD and PD suitable for III/V-on-Si heterogeneous integration
• Work with the integration team to design feasible heterogenous integration flow to realize the device fabrication and circuit integration, using 8-inch and 12-inch facilities.
• Design of Experiments (DOE) for both design and process margin checking and control
• Experiment data analysis and documentation
• Design and fabrication process optimization based on the analysis of the process metrology data, device / circuit performance data
• Preparation of technical presentations and papers for internal meetings, as well as conferences and journals.
• Collaborate with project team to ensure quality and on-time delivery for various projects.
• Performs other duties as assigned.

Qualifications:

• PhD in Integrated Photonics, Opto-electronics, Materials Science, Physics or equivalent
• Strong hands-on experience in photonics integration.
• Design experience of III/V laser and photodetector
• Hands-on experience in photonic simulation using various electrical / photonics design software.
• Strong communication, industry awareness, and problem-solving skills.
• Minimum 3 years relevant design and experiment skills.
• Strong self-motivation and interest in the next-generation photonics technology development.
• Industry experience is a plus.

Job Overview:

The Institute of Materials Research and Engineering (IMRE) is a research institute of the Agency for Science, Technology, and Research (A*STAR). Quantum Innovation Centre (Q.InC) is an A*STAR-level entity hosted within IMRE. Q.InC and IMRE are looking for a senior principal quantum scientist who has sufficient experience and proven track record of success in leading and managing quantum research, and bringing in external competitive funding. The scientist will be leading part of Q.InC’s hardware research efforts in areas such as quantum sensing and/or integrated photonics, and sit on Q.InC’s management team to strategise for Q.InC’s success.

In this role, you will work on the following but not limited to:

• Report directly to A*STAR’s Chief Quantum Scientist (CQS) and Q.InC’s Executive Director
• Lead and be responsible for Q.InC’s research efforts in quantum sensing and/or integrated photonics and/or other areas as CQS deems suitable
• Be the lead who is responsible for the success of these efforts, and answer questions from CQS, HQ, and A*STAR senior management when needed
• Work together with CQS and Q.InC’s management team to strategise for Q.InC’s excellence, e.g. discuss the progress of responsible research areas and performance of staff in these teams
• For the responsible research areas, lead the relevant Q.InC teams to secure significant external competitive funding from different grant schemes such as NQPI, NQSP, NRF-CRP, MTC Programmatic, IAF-PP/ICP, etc
• For the responsible research areas, lead the relevant Q.InC teams to establish close connections with local agencies and industry partners, such as HTX, DSO, OSTIn, to establish joint research programmes that bring in significant external support
• Help ensure the Q.InC teams being led undergo a smooth transition into other new structures following A*STAR senior management’s guidance

Requirements:

• Proven track record in leading and managing research teams
• A PhD degree in physics or engineering, ideally in quantum science
• 20 years of relevant research experience
• 10 years of relevant management experience
• Understanding of the intricate dynamics in different stakeholders, and optimising for the best outcome for Q.InC

The above eligibility criteria are not exhaustive. A*STAR may include additional selection criteria based on its prevailing recruitment policies. These policies may be amended from time to time without notice. We regret that only shortlisted candidates will be notified.

ROLE:
IME is leading the effort to establish the industry leading Silicon Carbide R&D program. This program aims to advance 200mm Silicon Carbide technologies in various areas, such as epitaxy, device design, process integration & fabrication, and power module packaging. The main objective is to drive disruptive innovations in power device research, with a specific focus on >1.2KV power MOSFETs. These innovations are intended to enhance automotive technologies, vehicle electrification, safety measures, sustainable energy grids, and industrial automation. Key aspects to demonstrate for this role include high power device design, novel device concepts, doping design, gate oxidation, and wide-bandgap process simulations. To achieve this, we are seeking individual with extensive industry experience in using Synopsys/Silvaco TCAD simulator, relevant device characterization skills, design simulation development abilities, a willingness to mentor junior staffs, and strong interpersonal skills. The candidate will contribute to the wide-bandgap & Silicon Carbide team by utilizing their device knowledge, guiding team on device characterization, implementing state-of-art Silicon Carbide power MOSFETs (Planar, Trench & Super-Junction), and innovative novel power MOSFETs for future applications.

RESPONSIBILITIES:

• TCAD modeling & simulation, novel high power device design, simulation, and device characterization

• Design and simulate high voltage Silicon Carbide MOSFETs (planar, trench, SJ MOSFET, IGBT) with a blocking voltage of >1.2K using Synopsys/Silvaco simulator

• Design & simulate practical and effective junction terminations

• Provide guidances on device structure, optimizing cell, power/performance analysis, process risk assessment, and recommendations for experimental split and improvement

• Develop and apply fundamental MOS device physics-based TCAD modelling & electric field management to calculate band structure, carrier transport, blocking voltage,
switching properties, and thermal management for vertical power devices in the presence of interface state density, gate oxide defects, and defects in Silicon Carbide

• Model transport and carrier scattering in devices operating in extreme ambient conditions

• Collaborate with diverse teams, including process integration, characterization, and circuit design engineers, to analyze and troubleshoot device-related issues during
development

• Serve as a resource for colleagues with less experience, and lead small projects with manageable risks and resource requirements

• Work closely with both internal and external customers to understand customer issues and align their demands. And grow this wide-bandgap team to ~5 headcounts in the
next 3 years.

JOB REQUIREMENTS:

• PhD in Electrical Engineering or related field

• >10 years industrial experience for high power device design and modeling

• Deep knowledge of high voltage, high power MOSFETs (including Planar, Trench, S-J MOSFETs, and IGBTs) design and device characterization on 4H-SiC & GaN substrates.

• Solid understanding of wide-bandgap semiconductor materials and the strong physics of MOSFET devices

• Ability to teach and transfer knowledge to junior staff members

• Ability to effectively communicate and plan with customers regarding their needs, issues, and demands

ROLE:
IME is leading the effort to establish the industry leading Silicon Carbide R&D program. This program aims to advance 200mm Silicon Carbide technologies in various areas, such as epitaxy, device design, process integration & fabrication, and power module packaging. The main objective is to drive disruptive innovations in power device research, with a specific focus on >1.2KV power MOSFETs. These innovations are intended to enhance automotive technologies, vehicle electrification, safety measures, sustainable energy grids, and industrial automation. Key aspects to demonstrate for this role include high power device design, novel device concepts, doping design, gate oxidation, and wide-bandgap process simulations. To achieve this, we are seeking individual with extensive industry experience in using Synopsys/Silvaco TCAD simulator, relevant device characterization skills, design simulation development abilities, a willingness to mentor junior staffs, and strong interpersonal skills. The candidate will contribute to the wide-bandgap & Silicon Carbide team by utilizing their device knowledge, guiding team on device characterization, implementing state-of-art Silicon Carbide power MOSFETs (Planar, Trench & Super-Junction), and innovative novel power MOSFETs for future applications.

RESPONSIBILITIES:

• TCAD modeling & simulation, novel high power device design, simulation, and device characterization

• Design and simulate high voltage Silicon Carbide MOSFETs (planar, trench, SJ MOSFET, IGBT) with a blocking voltage of >1.2K using Synopsys/Silvaco simulator

• Design & simulate practical and effective junction terminations

• Provide guidances on device structure, optimizing cell, power/performance analysis, process risk assessment, and recommendations for experimental split and improvement

• Develop and apply fundamental MOS device physics-based TCAD modelling & electric field management to calculate band structure, carrier transport, blocking voltage,
switching properties, and thermal management for vertical power devices in the presence of interface state density, gate oxide defects, and defects in Silicon Carbide

• Model transport and carrier scattering in devices operating in extreme ambient conditions

• Collaborate with diverse teams, including process integration, characterization, and circuit design engineers, to analyze and troubleshoot device-related issues during
development

• Serve as a resource for colleagues with less experience, and lead small projects with manageable risks and resource requirements

• Work closely with both internal and external customers to understand customer issues and align their demands. And grow this wide-bandgap team to ~5 headcounts in the
next 3 years.

JOB REQUIREMENTS:

• PhD in Electrical Engineering or related field

• >10 years industrial experience for high power device design and modeling

• Deep knowledge of high voltage, high power MOSFETs (including Planar, Trench, S-J MOSFETs, and IGBTs) design and device characterization on 4H-SiC & GaN substrates.

• Solid understanding of wide-bandgap semiconductor materials and the strong physics of MOSFET devices

• Ability to teach and transfer knowledge to junior staff members

• Ability to effectively communicate and plan with customers regarding their needs, issues, and demands

Job Overview:

The Institute of Materials Research and Engineering (IMRE), part of the Agency for Science, Technology, and Research (A*STAR), is looking for a research scientist who is experienced in nonlinear and integrated photonics. The successful candidate will be part of a dynamic team of researchers developing integrated photonics devices for quantum technologies, including on-chip quantum-light sources, controllers, single-photon detectors, and heterogeneous integration with other functional devices. This work will lead to exciting applications in cutting-edge technologies such as quantum information processing and photonic computing.

The roles of the successful candidate will include:

• Design and fabricate integrated quantum photonic devices
• Construct optoelectronic measurement setups for device testing
• Characterize fabricated devices and perform nonlinear/quantum optics experiments
• Analysis and presentation of scientific data

Job Requirements:

• PhD degree in physics, applied physics, electrical engineering, material science & engineering, mechanical engineering, or any other relevant disciplines.
• At least 5 years of relevant experience
• Experience in experimental optics and photonics, especially in quantum/nonlinear optics
• Familiarity in characterization of photonics devices, including laser systems, photonic probe stations and test setups, and the measurement of quantum light
• Experience in micro/nano-fabrication is highly desired
• Ability to program (especially Python) lab equipment for testing automation
• Ability to independently plan and execute research work
• Ability to communicate well and work closely with team members

The above eligibility criteria are not exhaustive. A*STAR may include additional selection criteria based on its prevailing recruitment policies. These policies may be amended from time to time without notice. We regret that only shortlisted candidates will be notified.

Job Overview:

The Institute of Materials Research and Engineering (IMRE), part of the Agency for Science, Technology, and Research (A*STAR), is looking for a research scientist to join the development of an integrated quantum photonics platform, with a focus on integrated single-photon detectors. The scientist will be heavily involved in developing the device designs, building up our opto-electronics testing capabilities, and eventual device packaging and deployment. This work will lead to exciting applications in cutting-edge technologies such as quantum information processing and photonic computing.

The roles of the successful candidate will include:

• Design and develop photonics-integrated photodetectors and other silicon photonics devices
• Perform and/or oversee device fabrication processes
• Design, construct, and automate opto-electronic test stations for device testing
• Experimentally characterize fabricated devices (bare chips and packaged devices)
• Design and integrate control circuitry for operating integrated single-photon detector devices
• Integrate, develop, and test a wider integrated quantum photonics platform

Job Requirements:

• PhD degree in physics or engineering
• At least 5 years of relevant experience
• Background in experimental optics and/or electronics
• Able to independently plan and execute research work
• Ability to program (especially Python) lab equipment for testing automation
• Direct experience with photonics/photodetectors (especially avalanche photodetectors) is desirable
• Familiarity with circuit/PCB design, high-speed electronics, mechanical design, and machining is desirable
• Ability to communicate and work closely with team members

The above eligibility criteria are not exhaustive. A*STAR may include additional selection criteria based on its prevailing recruitment policies. These policies may be amended from time to time without notice. We regret that only shortlisted candidates will be notified.

The Institute of Materials Research and Engineering (IMRE) is a research institute of the Agency for Science, Technology, and Research (A*STAR) located at One-North in Singapore. We are looking for a researcher with experience in non-linear optics to help develop atomic spin gyroscopes and optical quantum memories based on atomic vapors. The successful candidate will work in a collaborative team of research engineers and scientists with complementary skill sets to investigate quantum sensing and quantum information processing applications. The candidate will be expected to help assemble experimental setups involving second harmonic generation of light within optical cavities and can expect to teach and learn from others with different backgrounds. He/she will also be expected to help run experiments involving gyroscopes and/or optical quantum memories, perform data analysis, write papers, and help supervise less experienced team members.

Job Requirements:

• PhD in physics, optics, or a related field
• At least 5 years of relevant working experience
• Experience in second harmonic generation of light using bulk non-linear crystals.
• Familiarity with laboratory equipment for quantum optics experiments, including lasers, optical components, and detectors.
• Experience with optical alignment of cavities is advantageous
• Ability to communicate and work well in a team.
• A passion and zeal for learning and trying out new ideas in lab.
• Ability to independently plan and execute research work
• Possess good critical thinking and problem-solving skills.
• Familiarity with Python is advantageous.

The above eligibility criteria are not exhaustive. A*STAR may include additional selection criteria based on its prevailing recruitment policies. These policies may be amended from time to time without notice. We regret that only shortlisted candidates will be notified.

The Executive will support Research Director and Assistant Manager in a variety of research finance and administrative functions. Examples of research finance functions to be supported include but will not be limited to processing of payment, billing and procurement, FY closing matters such as collation of expenses for accrual and actualisation, as well as tracking of utilisation or preparing projections for available research funding.

The candidate will also be involved in supporting of other secretariat/administrative initiatives when required.

The candidate should possess excellent verbal and written communication skills. She/he will interface with various teams within Group Research to provide efficient and timely support. The candidate should be able to work independently, as well as part of a collaborative team. Ability to meet deadlines and perform tasks meticulous is a must, willingness to develop analytical and critical-thinking skills will be a plus.

From mid March to mid September 2024

Monday to Friday, office hours

For interested candidate, please email your resumes to [email protected]

Denyse Nicole Tan Shuqin (#HDT)

Recruit Express Pte Ltd

CEI No: R1333503

Company EA license : 99C4599