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Job Description
This job aims to address some critical issues about realizing on-chip structured light field manipulation through inverse design. The main targets are threefold:
1. Understand in depth the inverse design in integrated photonics, and on-chip structured light. Explore new effects, novel phenomena, unique features, and high-performance devices based on inverse design structures. Research directions include high-performance topological photonics coupling and routing devices, all-optical logic and computing devices, etc.
2. Enhance the robustness of inverse design methods to accommodate lithography process errors and facilitate high-throughput manufacturing. Combining inverse design and new material platforms, the research results should be able to effectively provide useful guidance for the design of optical devices based on chalcogenide glass materials (such as GeSbSe) and phase change materials (such as SbSe), and develop new near-infrared, mid-infrared high-performance optical devices.
3. Find practical solutions, establish a unified paradigm for on-chip complex high-dimensional light field manipulation based on inverse design, and expand the application scope of inverse design. Explore the application of inverse design in topological photonics, structured light, and other fields. Finally, one or two prototypical designs should be experimentally demonstrated.
Considering the above research targets, the candidate should possess in-depth physical insights and interdisciplinary knowledge of inverse design, integrated photonics, chalcogenide photonics, structured light, topological photonics, mid-infrared photonics, SOI, etc.
Applicants with practical experience in the design, manufacturing and characterization of mid-infrared and near-infrared photonic systems are preferred.
Qualifications
1. PhD Degree in Physics, Photonics, Electrical Engineering or relevant area with a strong background in integrated photonics and inverse design.
2. Working experience in the field of inverse design, mid-infrared photonics, chalcogenide photonics, structured light, and optical logic gates.
3. Mathematics and specific knowledge required in electromagnetics, inverse design, chalcogenide photonics, phase change materials, mid-infrared photonics, and topological electromagnetics.
4. Technical proficiency:
a) theoretical and numerical modeling of inverse design structures and other physical systems with appropriate software;
b) cleanroom experience, such as lithography, film deposition, SEM, ICP, etc.;
c) optical measurements involving the transmission spectra, electric field and phase distribution, polarization manipulation and detection in various inverse design structures.
5. Candidate should have strong publication records in reputed International Journals in the field of inverse design and chalcogenide photonics.
6. Open to Fixed Term Contract
